| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/13/1981 | EP0028311A1 Serial-parallel-serial CCD memory system with fan out and fan in circuits |
| 05/12/1981 | US4267558 Electrically erasable memory with self-limiting erase |
| 05/12/1981 | US4267557 Semiconductor device |
| 05/12/1981 | US4267504 Device for measuring a quantity which influences a field-effect transistor |
| 05/12/1981 | US4267501 NMOS Voltage reference generator |
| 05/12/1981 | US4266985 Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate |
| 05/12/1981 | US4266334 By etching the substrate, and glueing a sheet of glass thereto |
| 05/12/1981 | US4266333 Method of making a Schottky barrier field effect transistor |
| 05/12/1981 | CA1101122A1 Low noise ccd input circuit |
| 05/06/1981 | EP0027919A2 Method of making integrated MOS circuits comprising high-voltage MOS transistors, and circuitry for switching power circuits by using such high-voltage MOS transistors |
| 05/06/1981 | EP0027903A1 Method of fabricating a GaAs semiconductor Schottky barrier device |
| 05/06/1981 | EP0027878A1 Rectifying installation having a six or twelve puls balance coil circuit |
| 05/05/1981 | US4266238 Semiconductor device having high-speed operation and integrated circuit using same |
| 05/05/1981 | US4266236 Transistor having emitter resistors for stabilization at high power operation |
| 05/05/1981 | US4266233 I-C Wafer incorporating junction-type field-effect transistor |
| 05/05/1981 | US4266151 Semiconductor circuit with at least two field effect transistors united in a semiconductor crystal |
| 05/05/1981 | US4266146 Charge transfer devices having switchable blocking electrodes |
| 05/05/1981 | US4265934 Method for making improved Schottky-barrier gate gallium arsenide field effect devices |
| 05/05/1981 | CA1100648A1 Method for providing a metal silicide layer on a substrate |
| 05/05/1981 | CA1100638A1 Analog-to-digital and digital-to-analog converter circuits employing charge redistribution |
| 04/29/1981 | EP0027761A1 High-frequency field effect semiconductor device and transistor using such a semiconductor device |
| 04/29/1981 | EP0027565A2 Dynamic memory cell with two complementary bipolar transistors |
| 04/28/1981 | US4264965 Dummy cell structure for MIS dynamic memories |
| 04/28/1981 | US4264964 Dynamic memory cell of the charge transfer type applicable in particular to a shift register |
| 04/28/1981 | US4264915 Having electrodes with blocking properties |
| 04/28/1981 | US4264914 Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same |
| 04/28/1981 | US4264884 Charge transfer filtering device |
| 04/28/1981 | US4264857 Constant voltage threshold device |
| 04/28/1981 | US4264383 Doping with boron and gallium |
| 04/28/1981 | US4264382 Method for making a lateral PNP or NPN with a high gain utilizing reactive ion etching of buried high conductivity regions |
| 04/28/1981 | US4264376 Method for producing a nonvolatile memory device |
| 04/28/1981 | US4263709 Planar semiconductor devices and method of making the same |
| 04/28/1981 | CA1100234A1 Channel depletion boundry modulation magnetic field sensor |
| 04/28/1981 | CA1100193A1 Transversal filter with at least one analogue shift register, and process for the operation thereof |
| 04/22/1981 | EP0027184A1 SOS structure and method of fabrication |
| 04/21/1981 | US4263663 VMOS ROM Array |
| 04/21/1981 | US4263518 Arrangement for correcting the voltage coefficient of resistance of resistors integral with a semiconductor body |
| 04/21/1981 | US4263340 Process for producing an integrated circuit |
| 04/21/1981 | US4263067 Fabrication of transistors having specifically paired dopants |
| 04/21/1981 | US4263066 Process for concurrent formation of base diffusion and p+ profile from single source predeposition |
| 04/21/1981 | US4263057 Method of manufacturing short channel MOS devices |
| 04/21/1981 | CA1099822A1 Fabricating integrated circuits incorporating high- performance bipolar transistors |
| 04/16/1981 | WO1981001073A1 Semiconductor devices controlled by depletion regions |
| 04/15/1981 | EP0026953A1 Method of manufacturing a semiconductor device |
| 04/14/1981 | US4262298 Ram having a stabilized substrate bias and low-threshold narrow-width transfer gates |
| 04/14/1981 | US4262297 Semiconductor charge transfer device with multi-level polysilicon electrode and bus-line structure |
| 04/14/1981 | US4262296 Vertical field effect transistor with improved gate and channel structure |
| 04/14/1981 | US4262295 Semiconductor device |
| 04/14/1981 | US4262217 CCD gain control |
| 04/14/1981 | US4261772 Method for forming voltage-invariant capacitors for MOS type integrated circuit device utilizing oxidation and reflow techniques |
| 04/14/1981 | US4261771 Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy |
| 04/14/1981 | US4261765 Plurity of transistors whose base regions are diffused with different depths |
| 04/14/1981 | US4261761 Method of manufacturing sub-micron channel width MOS transistor |
| 04/14/1981 | US4261095 Semiconductors |
| 04/14/1981 | US4261086 Method for manufacturing variable capacitance pressure transducers |
| 04/14/1981 | CA1099409A1 Charge transfer device differencing circuit |
| 04/08/1981 | EP0026686A1 Process for producing polycrystalline silicium layers located on silica clad regions of a silicium board, and application to the production of a non-planar self-aligned MOS transistor |
| 04/08/1981 | EP0026629A2 Methods of manufacturing semiconductor devices, for example photodiodes, and devices so manufactured |
| 04/08/1981 | EP0026386A2 Method of making integrated semiconductor circuits, particularly CCD circuits, with self-aligned, non-overlapping polysilicon electrodes |
| 04/08/1981 | EP0026376A2 Method of making integrated semiconductor circuits, particularly CCD circuits with self-aligned, non-overlapping polysilicon electrodes |
| 04/08/1981 | EP0026276A1 Method for making filamentary pedestal transistors |
| 04/07/1981 | US4261004 Semiconductor device |
| 04/07/1981 | US4261002 Monolithic complementary darlington |
| 04/07/1981 | US4261001 Partially isolated amplifying gate thyristor with controllable dv/dt compensation, high di/dt capability, and high sensitivity |
| 04/07/1981 | US4261000 High voltage semiconductor device having an improved dv/dt capability |
| 04/07/1981 | US4260431 Method of making Schottky barrier diode by ion implantation and impurity diffusion |
| 04/07/1981 | US4260430 Method of manufacturing a semiconductor device |
| 04/07/1981 | US4259779 Method of making radiation resistant MOS transistor |
| 04/07/1981 | CA1098973A1 Transversal filter having at least one analog shift register, and a method for its operation |
| 04/02/1981 | WO1981000932A1 Ohmic contact to p-type inp or ingaasp |
| 04/02/1981 | WO1981000931A1 Cmos p-well selective implant method,and a device made therefrom |
| 04/02/1981 | WO1981000924A1 Current source having saturation protection |
| 04/01/1981 | EP0026056A1 Semiconductor integrated circuit protection arrangement |
| 04/01/1981 | EP0025909A2 A method of manufacturing an insulated gate field-effect transistor in a silicon wafer |
| 04/01/1981 | EP0025854A1 Method of making bipolar transistors |
| 03/31/1981 | US4259730 IIL With partially spaced collars |
| 03/31/1981 | US4259683 High switching speed P-N junction devices with recombination means centrally located in high resistivity layer |
| 03/31/1981 | US4259682 Semiconductor device |
| 03/31/1981 | US4259681 Integrated circuit |
| 03/31/1981 | US4259680 N-p-n structure |
| 03/31/1981 | US4259598 Charge transfer signal processing apparatus transversal filter |
| 03/31/1981 | US4259597 Charge transfer signal processing apparatus |
| 03/31/1981 | US4258466 High density electrically programmable ROM |
| 03/31/1981 | US4258465 Method for fabrication of offset gate MIS device |
| 03/31/1981 | CA1098624A1 Type of superlattice |
| 03/31/1981 | CA1098608A1 Semiconductor device having a passivating layer |
| 03/31/1981 | CA1098595A1 Logic element having low power consumption |
| 03/31/1981 | CA1098594A1 Transversal filter |
| 03/25/1981 | EP0025742A1 Field-effect transistor having a high cut-off frequency |
| 03/25/1981 | EP0025717A2 A semiconductor device comprising two insulating films and process for producing the same |
| 03/25/1981 | EP0025658A2 Improvements in or relating to charge storage and transfer devices and their fabrication |
| 03/24/1981 | US4258380 Bipolar transistor having an integrated resistive emitter zone |
| 03/24/1981 | US4258377 Lateral field controlled thyristor |
| 03/24/1981 | US4258376 Charge coupled circuit arrangement using a punch-through charge introduction effect |
| 03/24/1981 | US4257832 Process for producing an integrated multi-layer insulator memory cell |
| 03/24/1981 | US4257826 Photoresist masking in manufacture of semiconductor device |
| 03/24/1981 | CA1098218A1 Thyristor |
| 03/19/1981 | WO1981000791A1 Ram having a stabilized substrate bias and low-threshold narrow-width transfer gates |
| 03/19/1981 | WO1981000790A1 Silicon gate non-volatile memory device |
| 03/18/1981 | EP0025325A2 Semiconductor memory device and the process for producing the same |