| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/14/1979 | US4164747 Semiconductor arrangement |
| 08/14/1979 | US4164668 Method of correcting the voltage coefficient of resistors implanted or diffused in a semiconductor substrate |
| 08/14/1979 | US4164436 Process for preparation of semiconductor devices utilizing a two-step polycrystalline deposition technique to form a diffusion source |
| 08/14/1979 | CA1060573A1 Electrostatically bonded dielectric-on-semiconductor device, and a method of making the same |
| 08/08/1979 | EP0003413A2 Improvements relating to semiconductor memories |
| 08/08/1979 | EP0003330A1 Process for producing integrated semiconductor devices having adjacent heavily doped semiconductor regions of the opposite-conductivity type |
| 08/08/1979 | EP0003260A1 Integrated injection logic digital-to-analog converter employing feedback regulation and method therefor |
| 08/08/1979 | EP0003231A1 MIS field effect transistor with short channel length and method of making the same |
| 08/07/1979 | US4163988 Split gate V groove FET |
| 08/07/1979 | US4163986 Twin channel Lorentz coupled depletion width modulation effect magnetic field sensor |
| 08/07/1979 | US4163985 Nonvolatile punch through memory cell with buried n+ region in channel |
| 08/07/1979 | US4163984 Field effect transistor |
| 08/07/1979 | US4163983 Solid state neuron |
| 08/07/1979 | US4163957 Transversal filter with at least one analogue shift register, and process for the operation thereof |
| 07/31/1979 | US4163246 Semiconductor integrated circuit device employing a polycrystalline silicon as a wiring layer |
| 07/31/1979 | US4163245 Integrated circuit device |
| 07/31/1979 | US4163243 One-transistor memory cell with enhanced capacitance |
| 07/31/1979 | US4163241 Multiple emitter and normal gate semiconductor switch |
| 07/31/1979 | US4163239 Second level phase lines for CCD line imager |
| 07/31/1979 | US4163237 High mobility multilayered heterojunction devices employing modulated doping |
| 07/31/1979 | CA1059645A1 Selective chemical sensitive fet transducers |
| 07/31/1979 | CA1059627A1 Bulk charge coupled device |
| 07/26/1979 | WO1979000474A1 A stratified charge memory device |
| 07/26/1979 | WO1979000461A1 Complementary mis-semiconductor integrated circuits |
| 07/25/1979 | EP0003130A2 Three-layer semiconductor diode and its application |
| 07/25/1979 | EP0003079A1 Infra red light emissive devices |
| 07/24/1979 | US4162506 Semiconductor integrated circuit device with dual thickness poly-silicon wiring |
| 07/24/1979 | US4162504 Floating gate solid-state storage device |
| 07/24/1979 | US4162411 Charge transfer analog processing apparatus for serial-to-parallel conversion |
| 07/24/1979 | US4162176 Method for forming floating gate semiconductor device by selective ion-implantation |
| 07/24/1979 | CA1059243A1 Polycrystalline silicon semiconductor passivation and masking |
| 07/24/1979 | CA1059241A1 Method of manufacturing a semiconductor device employing silicon ion implantation into silicon compound layer |
| 07/24/1979 | CA1059240A1 Lateral semiconductor device |
| 07/17/1979 | US4161745 Semiconductor device having non-metallic connection zones |
| 07/17/1979 | US4161741 Semiconductor memory device |
| 07/17/1979 | US4161739 Microwave InP/SiO2 insulated gate field effect transistor |
| 07/17/1979 | US4161418 Ionized-cluster-beam deposition process for fabricating p-n junction semiconductor layers |
| 07/17/1979 | CA1058770A1 Edgeless transistor |
| 07/17/1979 | CA1058753A1 D.c. stable single device memory cell |
| 07/11/1979 | EP0002997A2 Field effect transistor with stacked self-aligned gates and method for making it |
| 07/11/1979 | EP0002840A1 Cathode-sided controlled thyristor having an anode layer comprising two adjacent regions of different conductivity |
| 07/11/1979 | EP0002797A1 Method for fabricating a semiconductor structure including active devices and resistive regions |
| 07/11/1979 | EP0002751A1 Circuit for adjusting the value of resistance of a terminating resistance of interconnections in semiconductor structures |
| 07/11/1979 | EP0002731A1 Thin film structure for a contact arrangement and method for fabricating same |
| 07/11/1979 | EP0002670A1 Method of making a bipolar transistor in a semiconductor substrate |
| 07/11/1979 | EP0002661A1 Process for making integrated bipolar transistors |
| 07/10/1979 | US4161039 N-Channel storage FET |
| 07/10/1979 | US4160992 Plural semiconductor devices mounted between plural heat sinks |
| 07/10/1979 | US4160991 High performance bipolar device and method for making same |
| 07/10/1979 | US4160988 Integrated injection logic (I-squared L) with double-diffused type injector |
| 07/10/1979 | US4160987 Field effect transistors with polycrystalline silicon gate self-aligned to both conductive and non-conductive regions and fabrication of integrated circuits containing the transistors |
| 07/10/1979 | US4160986 Bipolar transistors having fixed gain characteristics |
| 07/10/1979 | US4160984 Schottky-gate field-effect transistor and fabrication process therefor |
| 07/10/1979 | US4160683 Method of manufacturing field effect transistors of the MOS-type |
| 07/10/1979 | CA1058326A1 Gate assist turn-off, amplifying gate thyristor and a package assembly therefor |
| 07/10/1979 | CA1058325A1 Enhancement-and depletion-type field effect transistors connected in parallel |
| 07/03/1979 | US4160262 CCD electrode and channel structure for 180° turn |
| 07/03/1979 | US4160261 Mis heterojunction structures |
| 07/03/1979 | US4160260 Planar semiconductor devices and method of making the same |
| 07/03/1979 | US4160259 Semiconductor device |
| 07/03/1979 | US4160258 Optically coupled linear bilateral transistor |
| 07/03/1979 | US4159915 Method for fabrication vertical NPN and PNP structures utilizing ion-implantation |
| 07/03/1979 | US4159561 Method of making a substrate contact for an integrated circuit |
| 07/03/1979 | CA1057862A1 Self-aligned cmos process for bulk silicon and insulating substrate device |
| 06/27/1979 | EP0002486A1 Static storage cell consisting of two field effect transistors and its usage in a programmable logic circuit |
| 06/26/1979 | US4159430 Charge transfer device for processing video-frequency signals |
| 06/26/1979 | CA1057419A1 Technique for preventing forward biased epi-isolation degradation |
| 06/26/1979 | CA1057418A1 Composite channel field effect transistor and method of fabrication |
| 06/26/1979 | CA1057413A1 Integrated circuit device including both n-channel and p-channel insulated gate field effect transistors |
| 06/26/1979 | CA1057412A1 Semiconductor device and method of manufacturing same |
| 06/26/1979 | CA1057411A1 Through-substrate source contact for microwave fet |
| 06/26/1979 | CA1057172A1 Semiconductor device manufacture |
| 06/19/1979 | US4158851 Semi-insulating gallium arsenide single crystal |
| 06/19/1979 | US4158850 Thyristor having improved cooling and improved high frequency operation with adjacent control terminals |
| 06/19/1979 | US4158849 Indium phosphide, germanium |
| 06/19/1979 | US4158807 Gapped gate charge-flow transistor with a thin film sensor having two modes of conduction within the gapped gate used to sense a property of the ambient environment |
| 06/19/1979 | US4158783 Current hogging injection logic with self-aligned output transistors |
| 06/19/1979 | CA1056951A1 Analog signal processor |
| 06/13/1979 | EP0002421A2 Process of neutralizing the positive charges in the insulating gate of at least one field-effect transistor with insulated gate |
| 06/13/1979 | EP0002420A1 Light activated semiconductor device of the field effect transistor type and resulting memory |
| 06/13/1979 | EP0002343A1 A chemical-sensitive field-effect transistor, method of manufacture, and use in a probe and an instrument |
| 06/13/1979 | EP0002191A1 Integrated semiconductor device in I2L-technique and method of manufacturing it |
| 06/12/1979 | US4158239 Resistive gate FET flip-flop storage cell |
| 06/12/1979 | US4158209 CCD comb filters |
| 06/12/1979 | US4158206 Semiconductor device |
| 06/12/1979 | US4158146 Device for coupling transistors operated in I2 L to a transistor operated at a higher bias-current |
| 06/12/1979 | US4157610 Method of manufacturing a field effect transistor |
| 06/12/1979 | CA1056513A1 Integrated logic circuit and method of fabrication |
| 06/12/1979 | CA1056511A1 Intermetallic layers in thin films for improved electromigration resistance |
| 06/05/1979 | US4157563 Semiconductor device |
| 06/05/1979 | US4157562 Gate controlled bidirectional semiconductor switching device having two base regions each having a different depth from an adjacent surface |
| 06/05/1979 | US4157561 High power transistor |
| 06/05/1979 | US4157557 Control circuit for signal transmission |
| 06/05/1979 | US4157556 Heterojunction confinement field effect transistor |
| 06/05/1979 | US4157555 Superconducting transistor |
| 06/05/1979 | US4157513 Protective system for power stage of monolithic circuitry |
| 06/05/1979 | US4157269 Utilizing polysilicon diffusion sources and special masking techniques |
| 06/05/1979 | US4157268 Localized oxidation enhancement for an integrated injection logic circuit |
| 06/05/1979 | US4156963 Method for manufacturing a semiconductor device |
| 06/05/1979 | CA1056070A1 Method of making an ic structure having both power and signal components |