Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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08/12/1981 | EP0033380A2 Passivated semiconductor p-n junction with high-breakdown voltage |
08/11/1981 | US4283734 Process for the manufacture of millimeter wave sources of the module type |
08/11/1981 | US4283483 Process for forming semiconductor devices using electron-sensitive resist patterns with controlled line profiles |
08/11/1981 | US4283236 Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping |
08/11/1981 | US4283235 Dielectric isolation using shallow oxide and polycrystalline silicon utilizing selective oxidation |
08/11/1981 | US4282648 CMOS process |
08/11/1981 | US4282647 Method of fabricating high density refractory metal gate MOS integrated circuits utilizing the gate as a selective diffusion and oxidation mask |
08/11/1981 | US4282646 Method of making a transistor array |
08/11/1981 | CA1106981A1 Process for producing integrated circuit devices by ion implantation |
08/06/1981 | WO1981002222A1 Composit gate interconnect structure |
08/06/1981 | WO1981002217A1 Mos memory cell |
08/05/1981 | EP0033154A2 Monolithic integrated semiconductor circuit comprising transistors |
08/05/1981 | EP0033037A2 Heterojunction semiconductor devices |
08/05/1981 | EP0033028A1 A semiconductor integrated circuit device |
08/05/1981 | EP0033003A2 Double diffused MOS field-effect-transistor and process for its manufacture |
08/05/1981 | EP0032999A2 Process for producing a bipolar vertical transistor structure |
08/05/1981 | EP0032958A1 Semiconductor memory device |
08/04/1981 | US4282556 Input protection device for insulated gate field effect transistor |
08/04/1981 | US4282555 Overvoltage protection means for protecting low power semiconductor components |
08/04/1981 | US4282542 Interference-potential-compensated thyristor comprising at least four zones of different type of conductivity |
08/04/1981 | US4282540 FET Containing stacked gates |
08/04/1981 | US4282539 Field effect transistor with decreased substrate control of the channel width |
08/04/1981 | US4282537 Silicon MOS inductor |
08/04/1981 | US4282446 High density floating gate EPROM programmable by charge storage |
08/04/1981 | CA1106483A1 Diode capable of alternately functioning as an emitter and detector of light of the same wavelength |
08/04/1981 | CA1106477A1 Overflow channel for charge transfer imaging devices |
07/29/1981 | EP0032700A2 JFET device |
07/29/1981 | EP0032695A2 Semiconductor memory device |
07/29/1981 | EP0032599A2 Thyristor for low loss switching of small impulses |
07/29/1981 | EP0032588A2 Substrate bias generation circuit |
07/29/1981 | EP0032550A1 Method for producing a vertical bipolar PNP transistor structure |
07/29/1981 | EP0032512A1 Laser annealed double conductor structure |
07/29/1981 | EP0032510A1 Silicon on sapphire laser process. |
07/28/1981 | US4281397 Virtual ground MOS EPROM or ROM matrix |
07/28/1981 | US4281336 Thyristor element with short turn-off time and method for producing such element |
07/28/1981 | US4280858 Method of manufacturing a semiconductor device by retarding the diffusion of zinc or cadmium into a device region |
07/28/1981 | US4280855 Method of making a dual DMOS device by ion implantation and diffusion |
07/28/1981 | US4280854 Method of manufacturing a semiconductor device having conductive and insulating portions formed of a common material utilizing selective oxidation and angled ion-implantation |
07/28/1981 | US4280272 Method for preparing complementary semiconductor device |
07/28/1981 | US4280271 Three level interconnect process for manufacture of integrated circuit devices |
07/28/1981 | CA1106078A1 Method of fabricating itegrated circuits with oxidized isolation and the resulting structure |
07/28/1981 | CA1106062A1 Two-phase charge coupled device structure |
07/22/1981 | EP0032421A1 Fiber-reinforced concrete |
07/22/1981 | EP0032386A2 A method for tailoring forward voltage drop (VTM) switching time (tq) and reverse-recovery charge (Qrr) in a power thyristor using nuclear particle and electron irradiation |
07/22/1981 | EP0032264A2 Thyristor with shorted emitter having a short time current flow |
07/22/1981 | EP0032211A2 Method to make a silicon layer being partly polycrystalline and partly monocrystalline |
07/22/1981 | EP0032195A1 Schottky barrier diode and method of making it |
07/21/1981 | US4280068 Bulk channel charge coupled device having improved input linearity |
07/21/1981 | US4280067 Semiconductor charge transfer device having a decoupling gate for stopping reverse charge flow |
07/21/1981 | US4280066 Charge transfer apparatus |
07/21/1981 | US4279671 Method for manufacturing a semiconductor device utilizing dopant predeposition and polycrystalline deposition |
07/21/1981 | US4279670 Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material |
07/21/1981 | US4279069 Fabrication of a nonvolatile memory array device |
07/21/1981 | CA1105599A1 Device for making a contact with a semiconductor element |
07/15/1981 | EP0032069A1 Method to adjust the temperature coefficient of a reference diode and a reference diode so adjusted |
07/15/1981 | EP0032068A1 Three terminal diode and mounting of a main semiconductor component and the diode in a single housing |
07/15/1981 | EP0032046A2 Circuitry for protecting a semiconductor device against static electricity |
07/15/1981 | EP0032042A2 An insulated gate field effect transistor |
07/15/1981 | EP0032030A2 A semiconductor device and a method of manufacturing a semiconductor device |
07/15/1981 | EP0032022A1 A method of fabricating a semiconductor integrated circuit device |
07/15/1981 | EP0032018A1 Semiconductor integrated circuit device |
07/15/1981 | EP0032016A2 Method of manufacturing a semiconductor device |
07/15/1981 | EP0031947A1 Monolithically integratable logic cell |
07/15/1981 | EP0031898A1 Method of making doped regions to electrically insulate single semiconductor devices on a silicon wafer, and semiconductor arrangement produced by this method |
07/15/1981 | EP0031891A2 Multi-level charge-coupled devices memory system |
07/14/1981 | US4278987 Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientations |
07/14/1981 | US4278986 Semiconductor diode |
07/14/1981 | US4278899 Electronic circuit for a timepiece |
07/14/1981 | US4278476 Method of making ion implanted reverse-conducting thyristor |
07/14/1981 | US4278475 Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation |
07/14/1981 | US4277883 Integrated circuit manufacturing method |
07/14/1981 | US4277882 Method of producing a metal-semiconductor field-effect transistor |
07/14/1981 | US4277881 Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
07/14/1981 | CA1105151A1 Tunnel diode |
07/14/1981 | CA1105139A1 Charge transfer device having linear differential charge-splitting input |
07/09/1981 | WO1981001926A1 Control circuitry using two branch circuits for high-voltage solid-state switches |
07/09/1981 | WO1981001925A1 Control circuitry using a pull-down transistor for high voltage solid-state switches |
07/09/1981 | WO1981001913A1 Method for fabricating igfet integrated circuits |
07/09/1981 | WO1981001911A1 Method for achieving ideal impurity base profile in a transistor |
07/08/1981 | EP0031715A2 A semiconductor memory having a power-down function |
07/08/1981 | EP0031643A1 Semiconductor memory device |
07/08/1981 | EP0031539A2 Voltage distribution system of an LSI chip |
07/08/1981 | EP0031536A2 A metal-insulator-semiconductor transistor device |
07/08/1981 | EP0031490A2 One device field effect transistor AC stable random access memory array |
07/08/1981 | EP0031452A1 Oscillatory semi-conductor devices |
07/08/1981 | EP0031377A1 Floating gate vertical fet |
07/08/1981 | EP0031367A1 Method for forming voltage-invariant capacitors for mos type integrated circuit device. |
07/07/1981 | US4277792 Piggyback readout stratified channel CCD |
07/07/1981 | US4277701 Semiconductor integrated injection logic structure controlled by the injector |
07/07/1981 | US4277694 Charge coupled device variable divider with integrating well |
07/07/1981 | US4277517 Diffusion, dopes, oxidation to form electroconductor pattern in dielectric material |
07/07/1981 | US4277307 Method of restoring Si crystal lattice order after neutron irradiation |
07/07/1981 | US4277291 Process for making CMOS field-effect transistors |
07/07/1981 | CA1104726A1 Thyristor fired by collapsing voltage |
07/07/1981 | CA1104720A1 Low noise ccd input circuit |
07/01/1981 | EP0031238A2 Semiconductor memory device |
07/01/1981 | EP0031180A2 Method of growing a doped III-V alloy layer by molecular beam epitaxy and a semiconductor device comprising a semiconductor substrate bearing an epitaxial layer of a doped III-V alloy grown by such a method |
07/01/1981 | EP0031107A1 Process for fabricating a bipolar integrated circuit |
07/01/1981 | EP0031094A2 Integratable semiconductor storage cell |
07/01/1981 | EP0031085A2 Charge transfer signal processing apparatus |