| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/24/1980 | WO1980000116A1 Mounting semi-conductor elements with insulating envelope |
| 01/23/1980 | EP0007099A1 Amplifying gate thyristor and process for its manufacture |
| 01/23/1980 | EP0007016A2 Voltage-to-charge transducer |
| 01/23/1980 | EP0007005A1 Method of producing field-effect transistors of the MOS type with self-aligned gate and contact vias |
| 01/23/1980 | EP0007004A1 Test circuit for a charge coupled device (CCD) register |
| 01/23/1980 | EP0006983A1 Controlled-avalanche tension transistor that can be sensitive to a magnetic field |
| 01/23/1980 | EP0006975A1 Process for the non-destructive reading of an output signal coming from a CCD register and device therefor |
| 01/23/1980 | EP0006958A1 Complementary mis-semiconductor integrated circuits |
| 01/22/1980 | US4185319 Non-volatile memory device |
| 01/22/1980 | US4185292 Potential troughs for charge transfer devices |
| 01/22/1980 | US4185291 Junction-type field effect transistor and method of making the same |
| 01/22/1980 | US4185253 Temperature sensitive relaxation oscillator |
| 01/22/1980 | CA1070436A1 Semiconductor integrated circuit device composed of insulated gate field-effect transistors |
| 01/22/1980 | CA1070434A1 Reverse switching rectifier device |
| 01/22/1980 | CA1070427A1 N-channel storage field effect transistors |
| 01/15/1980 | US4184086 Semiconductor switch |
| 01/15/1980 | US4184085 Semiconductor memory device comprising a p-n junction in a polycrystalline semiconductor layer |
| 01/15/1980 | CA1070028A1 Method of producing a semiconductor arrangement |
| 01/15/1980 | CA1070016A1 Semiconductor floating gate storage device |
| 01/15/1980 | CA1070015A1 Charge transfer memory |
| 01/09/1980 | EP0006740A1 Improvements in strain gauges |
| 01/09/1980 | EP0006706A1 Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride |
| 01/09/1980 | EP0006510A1 Method of forming adjacent impurity regions of different doping in a silicon substrate |
| 01/09/1980 | EP0006474A1 Method of compensating for the voltage coefficient of ion-implanted or diffused semiconductor resistors |
| 01/09/1980 | EP0006470A2 Charge coupled memory and method of manufacturing it |
| 01/09/1980 | EP0006466A2 Charge coupled device and method for operating this device |
| 01/09/1980 | EP0006465A1 Dual-channel charge-coupled semi-conductor device |
| 01/09/1980 | EP0006428A2 Constant voltage threshold semiconductor device |
| 01/09/1980 | EP0006119A1 Integrated junction field effect transistor and method for making same |
| 01/08/1980 | US4183037 Semiconductor device |
| 01/08/1980 | US4183036 Schottky-transistor-logic |
| 01/08/1980 | US4183033 Field effect transistors |
| 01/08/1980 | US4182965 Semiconductor device having two intersecting sub-diodes and transistor-like properties |
| 01/08/1980 | US4182636 Twice patterned oxidation barrier layer |
| 01/08/1980 | US4182023 Process for minimum overlap silicon gate devices |
| 01/08/1980 | CA1069620A1 Semiconductor device having a passivated surface |
| 01/01/1980 | US4181878 Integrated-circuit chip with voltage divider |
| 01/01/1980 | US4181542 Channel-gate structure formed by double diffusion process |
| 01/01/1980 | US4181537 Method of fabricating an insulated gate field effect device |
| 12/25/1979 | US4180827 NPN/PNP Fabrication process with improved alignment |
| 12/25/1979 | US4180771 Semiconductors |
| 12/25/1979 | US4180618 Thin silicon film electronic device |
| 12/25/1979 | US4180596 Method for providing a metal silicide layer on a substrate |
| 12/25/1979 | US4180422 Method of making semiconductor diodes |
| 12/25/1979 | US4180416 Thermal migration-porous silicon technique for forming deep dielectric isolation |
| 12/25/1979 | US4179794 Process of manufacturing semiconductor devices |
| 12/25/1979 | US4179793 Method of making a charge transfer device |
| 12/18/1979 | US4179650 Variable impedance circuits |
| 12/18/1979 | US4179627 Electrical apparatus |
| 12/18/1979 | US4179534 Gold-tin-gold ohmic contact to N-type group III-V semiconductors |
| 12/18/1979 | US4179533 Multi-refractory films for gallium arsenide devices |
| 12/18/1979 | US4179528 Vacuum deposition of monocrystallone silicon |
| 12/18/1979 | US4178674 Process for forming a contact region between layers of polysilicon with an integral polysilicon resistor |
| 12/18/1979 | CA1068411A1 Power thyristor |
| 12/18/1979 | CA1068395A1 Charge coupled imager |
| 12/13/1979 | WO1979001053A1 Semiconductor ccd transversal filter with controllable threshold level |
| 12/12/1979 | EP0006003A1 Improvements in or relating to field effect devices and their fabrication |
| 12/12/1979 | EP0006002A1 Method of fabricating a field effect transistor |
| 12/12/1979 | EP0006001A1 Improvements in or relating to field effect devices and their fabrication |
| 12/12/1979 | EP0005744A1 Process for producing epitaxial layers on selectively doped silicon substrates with high impurity concentration |
| 12/12/1979 | EP0005741A1 A process for providing ion-implanted regions in a semiconductive substrate |
| 12/12/1979 | EP0005728A1 Method for making a lateral PNP or NPN transistor with a high gain and transistor so produced |
| 12/12/1979 | EP0005721A1 Method for fabricating a bipolar transistor having a polysilicon base contact and a polysilicon or metal emitter contact |
| 12/12/1979 | EP0005720A1 Method of making a field effect transistor with insulated gate and very narrow effective channel |
| 12/11/1979 | US4178630 Fluid-cooled thyristor valve |
| 12/11/1979 | US4178605 Complementary MOS inverter structure |
| 12/11/1979 | US4178603 Schottky transistor with low residual voltage |
| 12/11/1979 | US4178584 Integrated injection logic digital-to-analog converter employing feedback regulation and method |
| 12/11/1979 | US4178519 Input circuit for charge transfer apparatus |
| 12/11/1979 | US4178415 Codeposition of alkali metal with mixed silicon oxides |
| 12/11/1979 | US4178396 Multistep heat treatment in oxidizing atmosphere; semiconductors |
| 12/11/1979 | US4178197 Formation of epitaxial tunnels utilizing oriented growth techniques |
| 12/11/1979 | US4178190 Method of making a bipolar transistor with high-low emitter impurity concentration |
| 12/11/1979 | CA1068012A1 Metal semiconductor contracts for high frequency devices |
| 12/11/1979 | CA1068010A1 Semiconductor devices using genetically grown films of silicon nitride |
| 12/11/1979 | CA1068008A1 Mos input protection structure |
| 12/11/1979 | CA1068001A1 Single igfet memory cell with buried storage element |
| 12/04/1979 | US4177479 Electrical circuit with a high-frequency thyristor fired by blocking leakage current |
| 12/04/1979 | US4177478 Amplifying gate thyristor with gate turn-off (G.T.O.) |
| 12/04/1979 | US4177477 Semiconductor switching device |
| 12/04/1979 | US4177474 Boron, carbon, nitrogen, or oxygen and a modifier |
| 12/04/1979 | US4177473 Amorphous semiconductor member and method of making the same |
| 12/04/1979 | US4177096 Method for manufacturing a semiconductor integrated circuit device |
| 12/04/1979 | US4177095 Semiconductors |
| 12/04/1979 | CA1067623A1 Low noise read-type diode |
| 11/29/1979 | WO1979001012A1 Fluid cooled semiconductor device |
| 11/28/1979 | EP0005590A1 Charge coupled device |
| 11/28/1979 | EP0005461A1 Metal semiconductor field effect transistor(MESFET)and method for its manufacture |
| 11/27/1979 | US4176371 Thyristor fired by overvoltage |
| 11/27/1979 | US4176369 Image sensor having improved moving target discernment capabilities |
| 11/27/1979 | US4176368 Junction field effect transistor for use in integrated circuits |
| 11/27/1979 | US4176366 Avalanche transit time diode with heterojunction structure |
| 11/27/1979 | US4175983 Process for the production of a high frequency transistor |
| 11/27/1979 | US4175317 Method for manufacturing junction type field-effect transistors |
| 11/27/1979 | CA1067210A1 Method of making mos device |
| 11/27/1979 | CA1067208A1 Insulated gate field-effect transistor read-only memory array |
| 11/20/1979 | US4175291 Non-volatile random access memory cell |
| 11/20/1979 | CA1066815A1 Integrated circuit isolation structure and method for producing the isolation structure |
| 11/20/1979 | CA1066814A1 Semiconductor varactor device and electronic tuner using the same |
| 11/15/1979 | WO1979000968A1 High mobility multilayered heterojunction devices employing modulated doping |