Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/1982
01/12/1982CA1116297A1 Ram jfet memory with floating gates
01/12/1982CA1116280A1 Cermet layer for amorphous silicon solar cells
01/06/1982EP0043284A2 Semiconductor integrated circuit device having a high tolerance of abnormal high input voltages
01/06/1982EP0043246A1 Substrate bias generator for MOS integrated circuit
01/06/1982EP0043244A2 Single polycrystalline silicon static FET flip flop memory cell
01/06/1982EP0043099A2 Light-activated semiconductor device
01/06/1982EP0043009A2 Semiconductor controlled switch
01/06/1982EP0043007A2 Saturation-limited bipolar transistor circuit structure and method of making
01/06/1982EP0042964A1 Memory matrix using one-transistor floating gate MOS cells
01/06/1982EP0042947A1 Double polysilicon contact structure and process for making such structure
01/06/1982EP0042926A1 Aluminum to aluminum ohmic contacts, multilevel interconnections
01/05/1982US4309716 Bipolar dynamic memory cell
01/05/1982US4309715 Integral turn-on high voltage switch
01/05/1982US4309714 Gate turn-off diodes and arrangements including such diodes
01/05/1982CA1115857A1 Semiconductor absolute pressure transducer assembly and method
01/05/1982CA1115856A1 Semiconductor structure with improved phosphosilicate glass isolation
01/05/1982CA1115855A1 Method for fabricating transistor structures having very short effective channels
01/05/1982CA1115854A1 Semiconductor devices
12/1981
12/30/1981EP0042698A2 Semiconductor device
12/30/1981EP0042643A1 Method of manufacturing a semiconductor device and semiconductor device manufactured by using said method
12/30/1981EP0042552A2 MOS type semiconductor device
12/30/1981EP0042489A2 Semiconductor devices and use of said devices
12/30/1981EP0042477A1 Low voltage serial to parallel to serial charge coupled device
12/30/1981EP0042380A1 Method for achieving ideal impurity base profile in a transistor.
12/29/1981US4308594 MOS Memory cell
12/29/1981US4308549 High voltage field effect transistor
12/29/1981CA1115426A1 U-groove mos device
12/29/1981CA1115420A1 Process for the operation of a transversal filter
12/29/1981CA1115398A1 Controlled emission in heterojunction structures
12/29/1981CA1115358A1 Interface device for remote control
12/23/1981EP0042305A2 MOS transistor circuit with breakdown protection
12/23/1981EP0042175A2 Method of fabricating a semiconductor device having a silicon-on-sapphire structure
12/23/1981EP0042084A1 Semiconductor device especially a memory cell in V-MOS technology
12/23/1981EP0042066A2 Intermetallic semiconductor devices
12/23/1981EP0042040A2 Method of manufacturing an insulated gate field-effect transistor in a silicon wafer
12/22/1981US4307411 Nonvolatile semiconductor memory device and method of its manufacture
12/22/1981US4307131 Method of manufacturing metal-semiconductor contacts exhibiting high injected current density
12/22/1981US4306916 CMOS P-Well selective implant method
12/22/1981US4306915 Method of making electrode wiring regions and impurity doped regions self-aligned therefrom
12/22/1981US4306353 Process for production of integrated MOS circuits with and without MNOS memory transistors in silicon-gate technology
12/22/1981US4306352 Field effect transistor having an extremely short channel length
12/22/1981CA1114644A1 Solid state force transducer and method of making same
12/16/1981EP0041890A1 Element with non-linear conductivity, and switching circuit, especially for image display with such an element
12/16/1981EP0041786A1 Process for concurrent formation of base diffusion and p+ profile from single source predeposition
12/15/1981US4306300 Multi-level charge-coupled device memory system including analog-to-digital and trigger comparator circuits
12/15/1981US4306246 Method for trimming active semiconductor devices
12/15/1981US4305973 Laser annealed double conductor structure
12/15/1981US4305802 Ph sensor electrochemically connected together by a conductive resin in medical equipment
12/15/1981US4305760 Polysilicon-to-substrate contact processing
12/15/1981US4305201 Process for the production of a MIS field effect transistor having an adjustable, extremely short channel length
12/15/1981US4305200 Method of forming self-registering source, drain, and gate contacts for FET transistor structures
12/15/1981CA1114522A1 Thyristor with voltage breakover current control and method
12/15/1981CA1114521A1 Avalanche diode structure with improved efficiency and a diode using this structure
12/10/1981EP0034168A4 Hydrogen annealing process for silicon gate memory device.
12/09/1981EP0041263A2 Process for stabilising the current gain of NPN transistors
12/08/1981US4305086 MNOS Memory device and method of manufacture
12/08/1981US4305085 Semiconductor component with at least one planar PN junction and zone guard rings
12/08/1981US4305084 Semiconductor switching device capable of turn-on only at low applied voltages using self pinch-off means
12/08/1981US4305083 Single junction charge injector floating gate memory cell
12/08/1981US4305011 Reference voltage generator
12/08/1981US4304043 Process for preparing semiconductor device _by forming reinforcing regions to facilitate separation of pellets
12/08/1981US4304042 Self-aligned MESFETs having reduced series resistance
12/08/1981CA1114072A1 Charge-flow transistors having metallization patterns
12/08/1981CA1114016A1 Solar energy electrical conversion apparatus
12/02/1981EP0040817A1 Light-controlled bidirectional thyristor
12/02/1981EP0040816A1 Bidirectional thyristor
12/02/1981EP0040795A2 Semiconductor sensor
12/02/1981EP0040701A1 FET cell usable in storage or switching devices
12/01/1981US4303933 Self-aligned micrometer bipolar transistor device and process
12/01/1981US4303932 Lateral transistor free of parisitics
12/01/1981US4303903 Pressure sensitive apparatus
12/01/1981US4303839 Process for filtering an electrical signal by charge transfer into a semiconductor and switch capacitor filter using such a process
12/01/1981US4302875 Complementary MOSFET device and method of manufacturing the same
11/1981
11/26/1981WO1981003399A1 Semiconductor fabrication utilizing laser radiation
11/25/1981EP0040423A2 CTD line comprising a plurality of CTD elements
11/25/1981EP0040263A2 Insulated gate field effect transistor
11/25/1981EP0040251A1 Semiconductor memory device
11/24/1981US4302766 Self-limiting erasable memory cell with triple level polysilicon
11/24/1981US4302765 Geometry for fabricating enhancement and depletion-type, pull-up field effect transistor devices
11/24/1981US4302763 Semiconductor device
11/24/1981US4302685 Linear output stage for charge-coupled circuits
11/24/1981US4302530 Semiconductors
11/24/1981US4301592 Method of fabricating semiconductor junction device employing separate metallization
11/24/1981US4301588 Consumable amorphous or polysilicon emitter process
11/24/1981CA1113190A1 Light-controllable thyristors
11/18/1981EP0040125A1 Protection device against parasitic currents in integrated circuits
11/18/1981EP0039943A1 Thyristor having controllable emitter shorts and process for its operation
11/18/1981EP0039941A1 Circuit for a semiconductor device
11/18/1981EP0039875A2 Thyristor
11/18/1981EP0039736A1 Conductor-insulator semiconductor devices and methods for making the same
11/17/1981US4301462 Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber
11/17/1981US4301382 I2L With PNPN injector
11/17/1981US4301323 Lead-doped silicon with enhanced semiconductor properties
11/17/1981US4301233 Beam lead Schottky barrier diode for operation at millimeter and submillimeter wave frequencies
11/17/1981US4301191 Deposition through narrow mask 'portions' between apertures
11/17/1981US4301188 Process for producing contact to GaAs active region
11/17/1981US4300279 Method for the manufacture of a monolithic, static memory cell
11/17/1981CA1112769A1 Substance-sensitive electrical structures and method for making same
11/11/1981EP0039509A2 Thyristor with high blocking voltage and method of making same
11/11/1981EP0039411A2 Process for fabricating an integrated PNP and NPN transistor structure
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