Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/1981
02/04/1981EP0023241A2 Low-ohmic conductor for a semiconductor device and process for its manufacture
02/03/1981US4249195 Mesa-type transistor and method of producing same
02/03/1981US4249194 Integrated circuit MOS capacitor using implanted region to change threshold
02/03/1981US4249190 Floating gate vertical FET
02/03/1981CA1095184A1 Semiconductor junction-isolated pnpn crosspoint switch
02/03/1981CA1095183A1 Semiconductor device made by ion implantation
02/03/1981CA1095182A1 Integrated semiconductor crosspoint arrangement
02/03/1981CA1095180A1 High carrier velocity fet magnetic sensor
02/03/1981CA1095179A1 Method of making field effect transistor
02/03/1981CA1095178A1 Microwave semiconductor device with improved thermal properties
02/03/1981CA1095171A1 Dual injector, floating gate mos electrically alterable, non-volatile semiconductor memory device
02/03/1981CA1095154A1 Heterostructure semiconductor devices
01/1981
01/28/1981EP0023130A1 Semiconductor switch
01/28/1981EP0023021A1 Semiconductor device and method of manufacturing the same
01/28/1981EP0022870A1 Semiconductor circuit
01/28/1981EP0022857A1 REDUCTION OF SURFACE RECOMBINATION CURRENT IN GaAs DEVICES
01/27/1981US4247918 Electrically alterable nonvolatile memory
01/27/1981US4247863 Semiconductor memory device
01/27/1981US4247861 High performance electrically alterable read-only memory (EAROM)
01/27/1981US4247860 MIS Field effect transistor for high source-drain voltages
01/27/1981US4247859 Epitaxially grown silicon layers with relatively long minority carrier lifetimes
01/27/1981US4247826 Semiconductor integrated amplifier
01/27/1981US4247788 Charge transfer device with transistor input signal divider
01/27/1981US4247343 Oxidation, dopes, diffusion
01/27/1981US4246693 Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum
01/27/1981US4246692 MOS Integrated circuits with implanted resistor elements
01/27/1981CA1094693A1 Thyristor
01/27/1981CA1094692A1 Semiconductor device with layer of refractory material
01/27/1981CA1094502A1 Electrolytically etching masked gold layer without exceeding the chemical etching rate
01/27/1981CA1094429A1 Method of manufacturing a semiconductor device
01/22/1981WO1981000175A1 Floating gate vertical fet
01/22/1981WO1981000174A1 Vertical field effect transistor
01/22/1981WO1981000173A1 Merged field effect transistor circuit and fabrication process
01/22/1981WO1981000171A1 Method for forming voltage-invariant capacitors for mos type integrated circuit device
01/21/1981EP0022687A1 Integrated monolithic circuit equivalent to a transistor associated with three antisaturation diodes, and method for making it
01/21/1981EP0022483A1 Field-effect transistor and process for its production
01/21/1981EP0022474A1 Method for forming low-resistive diffusion regions in the silicon-gate-technology
01/21/1981EP0022461A1 Negative resistance semiconductor
01/20/1981US4246596 High current press pack semiconductor device having a mesa structure
01/20/1981US4246594 Low crosstalk type switching matrix of monolithic semiconductor device
01/20/1981US4246593 High density static memory cell with polysilicon resistors
01/20/1981US4246502 Means for coupling incompatible signals to an integrated circuit and for deriving operating supply therefrom
01/20/1981US4246498 Semiconductor integrated driving circuit including C-MOS and junction FET's
01/20/1981US4246496 Voltage-to-charge transducer
01/20/1981US4246296 Semiconductors in a plasma gas reactant
01/20/1981US4246050 Lattice constant grading in the Aly Ca1-y As1-x Sbx alloy system
01/20/1981US4246044 Method for fabricating semi-conductor devices
01/20/1981CA1094229A1 Electrostatically deformable thin silicon membranes
01/20/1981CA1094227A1 Temperature change detector
01/20/1981CA1094221A1 Memory type insulating gate field effect semiconductor device
01/14/1981EP0022388A1 Method of making a vertical DMOS type field effect transistor
01/14/1981EP0022383A1 Method of making a self aligned Schottky gate field effect transistor and transistor obtained by this method
01/14/1981EP0022355A1 Gate turn-off thyristor
01/14/1981EP0022280A1 Process for the chemical etching of silicon substrates
01/14/1981EP0022266A1 Semiconductor circuit device
01/14/1981EP0022204A1 Bipolar transistor and process for its production
01/14/1981EP0022202A1 Thyristor and process for its production
01/13/1981US4245230 Resistive Schottky barrier gate microwave switch
01/13/1981US4245209 Voltage divider including a tapped resistor diffused in semiconductor substrate
01/13/1981US4245199 Semiconductor CCD transversal filter with controllable threshold level
01/13/1981US4245165 Reversible electrically variable active parameter trimming apparatus utilizing floating gate as control
01/13/1981US4244097 Schottky-gate field-effect transistor and fabrication process therefor
01/13/1981CA1093703A1 Bipolar transistors and method of manufacturing the same
01/13/1981CA1093702A1 Semiconductor device and method of manufacturing same
01/13/1981CA1093700A1 Method of manufacturing a semiconductor device and device manufactured by using the method
01/13/1981CA1093664A1 Silicon charge-handling device employing sic electrodes
01/07/1981EP0022001A1 High-frequency vertical field effect power transistor and method of making such a transistor
01/07/1981EP0021931A1 Process for the self-alignment of differently doped regions of a semiconductor structure, and application of the process to the manufacture of a transistor
01/07/1981EP0021899A1 Shockley diode and method of making the same
01/07/1981EP0021869A1 Method of making a Schottky diode with improved voltage properties
01/07/1981EP0021858A1 Logic invertor circuit comprising semiconductor devices using the current saturation effect
01/07/1981EP0021777A1 Semiconductor non-volatile memory device
01/07/1981EP0021403A1 Self-aligned semiconductor circuits
01/07/1981EP0021400A1 Semiconductor device and circuit
01/07/1981EP0021393A1 Semiconductor device having pairs of vertical complementary bipolar transistors and method of fabrication therefor
01/07/1981EP0021218A1 Dynamic semiconductor memory cell and method of making it
01/07/1981EP0021217A1 Dynamic semiconductor memory cell and method of manufacturing same
01/07/1981EP0021185A1 Thin-film diodes arrangement
01/07/1981EP0021133A2 Semiconductor device comprising an interconnection electrode and method of manufacturing the same
01/07/1981EP0021086A1 Light activated device
01/07/1981EP0021026A1 Semiconductor diode device
01/07/1981EP0021025A1 Arrangement of Schottky diodes
01/07/1981EP0020998A1 Process for making a bipolar transistor with an ion-implanted emitter
01/07/1981EP0020993A1 Process for the characterization of the oxygen content of silicon rods drawn by the Czochralski method
01/07/1981EP0020929A1 Improvements relating to field effect transistors
01/07/1981EP0020708A1 Semiconductor memory device
01/07/1981EP0020666A1 Semiconductor device
01/07/1981EP0020336A1 Semiconductor device comprising at least two semiconductor elements
01/06/1981US4244035 Highly integrated dynamic memory element
01/06/1981US4244001 Transistors, oxidation, masking, dopes
01/06/1981US4244000 PNPN Semiconductor switches
01/06/1981US4243999 Gate turn-off thyristor
01/06/1981US4243997 Semiconductor device
01/06/1981US4243937 Microelectronic device and method for testing same
01/06/1981US4243897 Charge coupled semiconductor device storing 2-bit information
01/06/1981US4243896 I2 L Circuit with auxiliary transistor
01/06/1981US4243435 Bipolar transistor fabrication process with an ion implanted emitter
01/06/1981US4243427 High concentration phosphoro-silica spin-on dopant
01/06/1981US4242791 Dopes, oxidation, nitriding
01/06/1981CA1093218A1 Epitaxial growth of dissimilar materials