| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/23/1980 | EP0013603A1 Improved read only memory and method of programming such a memory |
| 07/23/1980 | EP0013520A1 Improved process for producing Schottky diodes and power diodes so made |
| 07/23/1980 | EP0013508A1 Semiconductor device and a method of producing the same |
| 07/23/1980 | EP0013482A2 Complementary metal-oxide semiconductor |
| 07/23/1980 | EP0013342A1 Method of fabrication of self-aligned field-effect transistors of the metal-semiconductor type |
| 07/23/1980 | EP0013340A1 Resistance with improved breakdown characteristics, made by a double ion implantation process in a semi-conductor substrate, and method of making it |
| 07/23/1980 | EP0013317A2 Process for the manufacture of field-effect transistors |
| 07/22/1980 | US4214315 Method for fabricating vertical NPN and PNP structures and the resulting product |
| 07/22/1980 | US4214256 Tantalum semiconductor contacts and method for fabricating same |
| 07/22/1980 | US4214255 Gate turn-off triac with dual low conductivity regions contacting central gate region |
| 07/22/1980 | US4214254 Amplified gate semiconductor controlled rectifier with reduced lifetime in auxiliary thyristor portion |
| 07/22/1980 | US4214252 Semiconductor device having a MOS-capacitor |
| 07/22/1980 | US4213840 Low-resistance, fine-line semiconductor device and the method for its manufacture |
| 07/22/1980 | US4213806 Forming an IC chip with buried zener diode |
| 07/22/1980 | US4213801 Gallium arsenide; semiconductors; germanium, tin or silicon layer |
| 07/22/1980 | US4213781 Deposition of solid semiconductor compositions and novel semiconductor materials |
| 07/22/1980 | CA1082373A1 Method of forming an integrated circuit region through the combination of ion implantation and diffusion steps |
| 07/22/1980 | CA1082371A1 Field effect transistor with self-aligned gate |
| 07/22/1980 | CA1082362A1 Charge detectors for ccd registers |
| 07/22/1980 | CA1082361A1 Method for stabilizing charge injectors |
| 07/22/1980 | CA1082314A1 Receiver automatic gain control system |
| 07/15/1980 | US4213142 Semiconductor device and method |
| 07/15/1980 | US4213140 Insulated-gate semiconductor device |
| 07/15/1980 | US4213139 Double level polysilicon series transistor cell |
| 07/15/1980 | US4213105 Transversal filter having at least one analog shift register, and a method for its operation |
| 07/15/1980 | US4213067 Integrated gate turn-off device with non-regenerative power portion and lateral regenerative portion having split emission path |
| 07/15/1980 | US4212683 Method for making narrow channel FET |
| 07/15/1980 | US4212100 Stable N-channel MOS structure |
| 07/15/1980 | CA1081863A1 Reducing the switching time of semiconductor devices by nuclear irradiation |
| 07/15/1980 | CA1081861A1 Integrated circuit |
| 07/09/1980 | EP0013173A2 Monolithic distributed resistor-capacitor device utilizing polycrystalline semiconductor material |
| 07/09/1980 | EP0013128A1 Charge-coupled device |
| 07/09/1980 | EP0013117A1 A MOS dynamic logic circuit |
| 07/09/1980 | EP0013091A1 Fabrication of two-level polysilicon MOS devices |
| 07/09/1980 | EP0012953A1 Charge coupled parallel-serial and serial-parallel charge transfer apparatus |
| 07/09/1980 | EP0012889A2 Device for diminishing the sensitivity of the threshold voltage of a MOSFET or a MISFET to variations of the voltage applied to the substrate |
| 07/09/1980 | EP0012846A1 Thyristor |
| 07/09/1980 | EP0012843A1 Arrangements for semi-conductor components with Schottky contact |
| 07/09/1980 | EP0012840A2 Line-addressable memory with serial-parallel-serial configuration |
| 07/08/1980 | US4212083 MOS Integrated with implanted resistor elements |
| 07/08/1980 | US4212022 Field effect transistor with gate and drain electrodes on the side surface of a mesa |
| 07/08/1980 | US4212019 Avalanche photodiode |
| 07/08/1980 | US4211941 Integrated circuitry including low-leakage capacitance |
| 07/08/1980 | US4211587 Process for producing a metal to compound semiconductor contact having a potential barrier of predetermined height |
| 07/08/1980 | US4210993 Method for fabricating a field effect transistor |
| 07/08/1980 | CA1081370A1 Package for light-triggered thyristor |
| 07/08/1980 | CA1081368A1 Field effect transistor with a short channel length |
| 07/08/1980 | CA1081363A1 Charge coupled device |
| 07/08/1980 | CA1081362A1 Balanced regenerative charge detection circuit for semiconductor charge transfer devices |
| 07/01/1980 | US4210924 Semiconductor controlled rectifier with configured cathode to eliminate hot-spots |
| 07/01/1980 | US4210922 Charge coupled imaging device having selective wavelength sensitivity |
| 07/01/1980 | US4210825 Linear differential charge splitting input for charge coupled devices |
| 07/01/1980 | US4210473 Process for producing a semiconductor device |
| 07/01/1980 | US4210472 Coating with dope to form p-n junction, mesa structure, diffusion, passivation |
| 07/01/1980 | US4210470 Epitaxial tunnels from intersecting growth planes |
| 07/01/1980 | US4210466 Silicon substrate, impurity diffusion coating metal electrodes, ion implantation |
| 07/01/1980 | US4210464 Method of simultaneously controlling the lifetimes and leakage currents in semiconductor devices by hot electron irradiation through passivating glass layers |
| 07/01/1980 | CA1080858A1 Semiconductor thyristor device |
| 07/01/1980 | CA1080857A1 Thyristor device with self-protection against breakover turn-on failure |
| 07/01/1980 | CA1080847A1 Charge coupled circuits |
| 06/26/1980 | WO1980001347A1 Control circuitry for gated diode switches |
| 06/26/1980 | WO1980001346A1 High power amplifier/switch using gated diode switch |
| 06/26/1980 | WO1980001338A1 High voltage junction solid-state switch |
| 06/26/1980 | WO1980001337A1 High voltage dielectrically isolated solid-state switch |
| 06/26/1980 | WO1980001335A1 Dielectrically-isolated integrated circuit complementary transistors for high voltage use |
| 06/26/1980 | WO1980001334A1 Semiconductor device |
| 06/25/1980 | EP0012667A1 Method of filtering an electric signal by charge transfer in a semi-conductor and switched capacitor filter utilizing such a method |
| 06/25/1980 | EP0012561A1 Semiconductor charge transfer devices |
| 06/25/1980 | EP0012393A1 Clock controlled monolithically integrable scanning circuit |
| 06/25/1980 | EP0012220A1 Method of making a Schottky contact with a self aligned guard ring |
| 06/24/1980 | US4209849 Non-volatile memory which can be erased word by word constructed in the floating gate technique |
| 06/24/1980 | US4209797 Complementary semiconductor device |
| 06/24/1980 | US4209796 Charge-flow transistors having metallization patterns |
| 06/24/1980 | US4209795 Reducing storage effect |
| 06/24/1980 | US4209350 Method for forming diffusions having narrow dimensions utilizing reactive ion etching |
| 06/24/1980 | US4209349 Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching |
| 06/24/1980 | US4208782 Methods of fabricating transducers employing flat bondable surfaces with buried contact areas |
| 06/24/1980 | US4208780 Last-stage programming of semiconductor integrated circuits including selective removal of passivation layer |
| 06/24/1980 | CA1080355A1 Double split-electrode for charge transfer device |
| 06/17/1980 | US4208670 One-transistor storage element and a process for the production thereof |
| 06/17/1980 | US4208669 Controllable semiconductor rectifier with interference potential compensation |
| 06/17/1980 | US4208668 Charge coupled device with buried zones in a semiconductor substrate for use especially as a light sensor |
| 06/17/1980 | US4208667 Controlled absorption in heterojunction structures |
| 06/17/1980 | US4208595 Substrate generator |
| 06/17/1980 | CA1079867A1 Schottky barrier contact and methods of fabrication thereof |
| 06/17/1980 | CA1079866A1 Fet one-device memory cells with two layers of polycrystalline silicon |
| 06/17/1980 | CA1079864A1 Process for making field effect and bipolar transistors on the same semiconductor chip |
| 06/17/1980 | CA1079819A1 Mtl (merged transistor logic) or i2l (integrated injection logic) circuitry |
| 06/17/1980 | CA1079804A1 Voltage sequencing circuit for sequencing voltage to an electrical device |
| 06/11/1980 | EP0011964A1 Semiconductor device including a diode and a bipolar transistor |
| 06/11/1980 | EP0011898A1 Method of manufacturing a semiconductor device |
| 06/11/1980 | EP0011879A1 Field-effect transistor |
| 06/11/1980 | EP0011694A1 Method and apparatus for the reversible adjustment of the electrical parameters of an electrical circuit |
| 06/11/1980 | EP0011686A1 Highly integrated dynamic memory cell and its method of operation |
| 06/10/1980 | US4207587 Package for light-triggered thyristor |
| 06/10/1980 | US4207586 Semiconductor device having a passivating layer |
| 06/10/1980 | US4207477 Bulk channel CCD with switchable draining of minority charge carriers |
| 06/10/1980 | US4206540 Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier |
| 06/10/1980 | CA1079402A1 Signal direction change in varied charge-coupled device structures |
| 06/03/1980 | US4206472 Thin film structures and method for fabricating same |