Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/1981
07/01/1981EP0031084A2 Charge transfer signal processing apparatus
07/01/1981EP0031020A2 DMOS field effect transistor device and fabrication process
06/1981
06/30/1981US4276616 Merged bipolar/field-effect bistable memory cell
06/30/1981US4276557 Integrated semiconductor circuit structure and method for making it
06/30/1981US4276556 Semiconductor device
06/30/1981US4276555 Controlled avalanche voltage transistor and magnetic sensor
06/30/1981US4276095 Method of making a MOSFET device with reduced sensitivity of threshold voltage to source to substrate voltage variations
06/30/1981CA1104266A1 Scr having high gate sensitivity and high dv/dt rating
06/30/1981CA1104265A1 Heterojunction avalanche diode with a ternary alloy of gallium, indium and arsenic, and a binary alloy of indium and phosphorus
06/30/1981CA1104241A1 Fluid-cooled thyristor valve
06/24/1981EP0030856A1 Charge-pumping semiconductor memory cell comprising a charge-storage region and memory device using such a cell
06/23/1981US4275409 Semiconductors coating
06/23/1981US4275408 Thyristor
06/23/1981US4275405 Semiconductor timing device with radioactive material at the floating gate electrode of an insulated-gate field-effect transistor
06/23/1981US4275362 Gain controlled amplifier using a pin diode
06/23/1981US4274909 Semiconductors
06/23/1981US4274891 Method of fabricating buried injector memory cell formed from vertical complementary bipolar transistor circuits utilizing mono-poly deposition
06/23/1981US4274890 Method for the epitaxial manufacture of a semiconductor device having a multi-layer structure
06/23/1981US4274193 Method for making a closed gate MOS transistor with self-aligned contacts
06/17/1981EP0030370A2 Ion implanted reverse-conducting thyristor
06/17/1981EP0030274A1 Thyristor having controllable emitter shorts and process for its operation
06/17/1981EP0030273A2 Semiconductor component having a protection ring
06/16/1981US4274105 MOSFET Substrate sensitivity control
06/16/1981US4274103 Avalanche photodiode with semiconductor hetero structure
06/16/1981US4274012 Substrate coupled floating gate memory cell
06/16/1981US4273594 Gallium arsenide devices having reduced surface recombination velocity
06/16/1981US4272882 Method of laying out an integrated circuit with specific alignment of the collector contact with the emitter region
06/16/1981US4272881 Method for making a closed gate MOS transistor with self-aligned contacts with dual passivation layer
06/16/1981CA1103346A1 Methods of operating imagers
06/10/1981EP0030178A2 Field effect transistor and fabricating process
06/10/1981EP0030162A2 Amorphous silicon MIS device
06/10/1981EP0029987A2 Semiconductor device
06/10/1981EP0029932A1 Asymmetrical field controlled thyristor
06/10/1981EP0029900A2 Self aligned circuit element or component designed as a bipolar transistor in a semiconductor substrate, and process for its production
06/10/1981EP0029887A1 Process for producing a vertical PNP transistor and transistor so produced
06/10/1981EP0029850A1 Charge coupled digital-to-analog converter
06/09/1981US4272774 Self-aligned floating gate memory cell and method of manufacture
06/09/1981US4272693 Analysis circuit for a charge coupled device
06/09/1981US4272304 Method of manufacturing a semiconductor device
06/09/1981US4272303 Method of making post-metal ion beam programmable MOS read only memory
06/09/1981US4272302 Method of making V-MOS field effect transistors utilizing a two-step anisotropic etching and ion implantation
06/09/1981US4271582 Process for producing a semiconductor device
06/09/1981CA1102926A1 Semiconductor device having improved schottky-barrier junction
06/09/1981CA1102925A1 Amorphous semiconductor member and method of making same
06/09/1981CA1102923A1 Semiconductor metallisation system
06/09/1981CA1102917A1 Charged coupled device with bulk transport
06/03/1981EP0029717A1 Bipolar type static memory cell
06/03/1981EP0029716A2 Semiconductor prom device
06/03/1981EP0029681A2 Bias-voltage generator
06/03/1981EP0029554A1 Process for producing MNOS memory transistors with very short channels by the silicon-gate technology
06/03/1981EP0029552A2 Method for producing a semiconductor device
06/03/1981EP0029548A1 Method for producing a bipolar transistor
06/03/1981EP0029538A1 Integratable circuit preventing the overdrive of a transistor
06/03/1981EP0029481A1 Field effect semiconductor structure
06/02/1981US4271424 Electrical contact connected with a semiconductor region which is short circuited with the substrate through said region
06/02/1981US4271423 V-groove semiconductor device with buried channel stop
06/02/1981US4271422 CMOS SOS With narrow ring shaped P silicon gate common to both devices
06/02/1981US4271419 Serial readout stratified channel CCD
06/02/1981US4271418 VMOS Memory cell and method for making same
06/02/1981US4270262 Semiconductor device and process for making the same
05/1981
05/28/1981WO1981001485A1 Narrow channel field effect semiconductor devices and methods for making
05/28/1981WO1981001484A1 Semiconductor memory device
05/27/1981EP0029369A2 A method of manufacturing a semiconductor device
05/27/1981EP0029350A2 An output transistor of a TTL device with a means for discharging carriers
05/27/1981EP0029334A1 Series-connected combination of two-terminal semiconductor devices and their fabrication
05/27/1981EP0029163A1 Light-controllable thyristor and process for its operation
05/26/1981US4270144 Charge coupled device with high speed input and output
05/26/1981US4270137 Field-effect devices
05/26/1981US4270136 Passivating metal oxide, metal layers
05/26/1981US4270059 Static induction transistor logic circuit
05/26/1981US4269682 Having a surface coating of a hydrophobic organic polymeric membrane; miniaturization; detection and measurement of activity and concentration of ions; medical/diagnosis
05/26/1981US4269636 Method of fabricating self-aligned bipolar transistor process and device utilizing etching and self-aligned masking
05/26/1981US4269631 Masking a semiconductor substrate with silicon dioxide; depositing polycrystalline silicone, melting with radiation, and crystallizing to form a single crystal silicon; bipolar; foundations
05/26/1981US4268952 Method for fabricating self-aligned high resolution non planar devices employing low resolution registration
05/26/1981US4268951 Submicron semiconductor devices
05/26/1981CA1102012A1 Semiconductor device, in particular integrated monolithic circuit, and method of manufacturing same
05/26/1981CA1102011A1 High sheet resistance structure for high density integrated circuits
05/26/1981CA1101994A1 Linear ccd input circuit
05/26/1981CA1101993A1 Charge coupled device
05/20/1981EP0028961A1 Charge transfer filter and switched capacitor filter comprising a voltage multiplier with switched capacitors
05/20/1981EP0028799A2 Triac having a multi-layer semiconductor body and process for its operation
05/20/1981EP0028798A2 Thyristor having an amplifying gate structure and process for its operation
05/20/1981EP0028797A2 Thyristor having improved switching behaviour and process for its operation
05/20/1981EP0028739A2 Process for the formation of the emitter zone of a transistor
05/20/1981EP0028678A2 Impurity diffusion process for producing a semiconductor device
05/20/1981EP0028675A1 CCD integrated circuit
05/20/1981EP0028655A1 Method of fabricating semiconductor device
05/19/1981US4268887 Protective system for power stage of IC amplifier
05/19/1981US4268848 Preferred device orientation on integrated circuits for better matching under mechanical stress
05/19/1981US4268847 Semiconductor device having an insulated gate type field effect transistor and method for producing the same
05/19/1981US4268846 Integrated gate turn-off device with lateral regenerative portion and vertical non-regenerative power portion
05/19/1981US4268844 Insulated gate field-effect transistors
05/19/1981US4268321 Method of fabricating a semiconductor device having channel stoppers
05/19/1981US4267632 Process for fabricating a high density electrically programmable memory array
05/19/1981CA1101565A1 Semiconductor switch
05/19/1981CA1101564A1 Low crosstalk type switching matrix of monolithic semiconductor device
05/19/1981CA1101550A1 Silicon gate ccd structure
05/19/1981CA1101549A1 Self-aligned ccd element including two levels of electrodes and method of manufacture therefor
05/19/1981CA1101548A1 Two phase charge coupled devices employing fixed charge for creating asymmetrical potential wells
05/13/1981EP0028354A1 Vertical Schottky logic
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