Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1980
11/11/1980US4233616 Semiconductor non-volatile memory
11/11/1980US4233615 Semiconductor integrated circuit device
11/11/1980US4233578 Transversal filter
11/11/1980US4233526 Semiconductor memory device having multi-gate transistors
11/11/1980US4233337 Method for forming semiconductor contacts
11/11/1980US4233093 Process for the manufacture of PNP transistors high power
11/11/1980US4232439 Masking technique usable in manufacturing semiconductor devices
11/04/1980US4232328 Dielectrically-isolated integrated circuit complementary transistors for high voltage use
11/04/1980US4232327 Extended drain self-aligned silicon gate MOSFET
11/04/1980US4232326 Chemically sensitive field effect transistor having electrode connections
11/04/1980US4232279 Low noise charge coupled device transversal filter
11/04/1980US4231819 Dielectric isolation method using shallow oxide and polycrystalline silicon utilizing a preliminary etching step
11/04/1980US4231810 Process for producing bi-polar charge coupled devices by ion-implantation
11/04/1980CA1089111A1 Self-protected semiconductor device
11/04/1980CA1089110A1 Light trigggered thyristor having controlled turn on delay
11/04/1980CA1089109A1 Metal base transistor with thin film amorphous semiconductors
10/1980
10/29/1980EP0018175A2 Process for producing an electrode on a semiconductor device
10/29/1980EP0018173A1 A programmable read-only memory device
10/29/1980EP0018091A1 A semiconductor device having a plurality of semiconductor chip portions
10/29/1980EP0017980A1 Thyristor controlled by a field-effect transistor
10/29/1980EP0017934A2 Method of manufacturing insulated-gate field-effect transistors
10/29/1980EP0017860A2 Semiconductor switching device and method of making same
10/29/1980EP0017808A1 Method involving testing an electrically alterable microelectronic memory circuit
10/29/1980EP0017719A1 Microelectronic fabrication method minimizing threshold voltage variation
10/29/1980EP0017709A1 Memory array device and fabrication process
10/29/1980EP0017697A1 Interconnection device for integrated semiconductor circuits, and process for its manufacture
10/28/1980US4231059 Technique for controlling emitter ballast resistance
10/28/1980US4231058 Tungsten-titanium-chromium/gold semiconductor metallization
10/28/1980US4231054 Thyristor with starting and generating cathode base contacts for use in rectifier circuits
10/28/1980US4231051 Process for producing minimal geometry devices for VSLI applications utilizing self-aligned gates and self-aligned contacts, and resultant structures
10/28/1980US4231050 Gallium, arsenic, oxygen doped
10/28/1980US4231049 Heterojunction photodiode of the avalanche type
10/28/1980US4231002 Transversal filter having parallel inputs
10/28/1980US4230952 Regenerator circuit for CCD arrangements in a multi-layer metallization structure
10/28/1980US4230505 Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal
10/28/1980US4229979 Transducer and method of making the same
10/28/1980CA1088676A1 Enhancement-mode fets and depletion-mode fets with two layers of polycrystalline silicon
10/28/1980CA1088664A1 Fabrication of semiconductor devices utilizing ion implantation
10/21/1980US4229757 Programmable memory cell having semiconductor diodes
10/21/1980US4229756 Ultra high speed complementary MOS device
10/21/1980US4229755 Fabrication of very large scale integrated circuits containing N-channel silicon gate nonvolatile memory elements
10/21/1980US4229754 CCD Imager with multi-spectral capability
10/21/1980US4229752 Virtual phase charge transfer device
10/21/1980US4229670 Integrated circuit having first and second internal circuits controlled by a common input terminal
10/21/1980US4228581 Method for producing semiconductor bodies having a defined edge profile which has been obtained by etching and is covered with a glass
10/21/1980CA1088216A1 Ion-controlled diode
10/21/1980CA1088215A1 Fabrication of power field effect transistors and the resulting structures
10/21/1980CA1088214A1 Semiconductor component
10/21/1980CA1088213A1 Self-protecting semiconductor device
10/15/1980EP0017541A1 Transversal electric-charge transfer filter
10/15/1980EP0017531A1 Field-effect transistor with high cut-off frequency and method of making it
10/15/1980EP0017377A2 Method of producing insulated bipolar transistors
10/15/1980EP0017244A1 Semiconductor circuit with pulse-controlled charge transfer devices
10/15/1980EP0017159A1 Monolithic integrated charge transfer device
10/15/1980EP0017022A1 A zener diode and method of fabrication thereof
10/15/1980EP0017021A1 Method of making a semiconductor device including complementary transistors
10/15/1980EP0016968A1 Method for fabricating self-aligned high resolution non planar devices employing low resolution registration
10/15/1980EP0016910A1 Method of forming epitaxial tunnels in crystalline structures
10/15/1980EP0016768A1 Mounting semi-conductor elements with insulating envelope.
10/14/1980US4228526 Line-addressable serial-parallel-serial array
10/14/1980US4228455 Gallium phosphide semiconductor device having improved electrodes
10/14/1980US4228453 (III) Plane gallium arsenide IMPATT diode
10/14/1980US4228451 High resistivity semiconductor resistor device
10/14/1980US4228450 Buried high sheet resistance structure for high density integrated circuits with reach through contacts
10/14/1980US4228447 Submicron channel length MOS inverter with depletion-mode load transistor
10/14/1980US4228445 Dual plane well-type two-phase ccd
10/14/1980US4228444 Semiconductor device
10/14/1980US4228369 Integrated circuit interconnection structure having precision terminating resistors
10/14/1980US4227944 Methods of making composite conductive structures in integrated circuits
10/14/1980US4227297 Method for producing a single transistor storage cell
10/14/1980CA1087756A1 High voltage thyristor
10/07/1980US4227203 Semiconductor device having a polycrystalline silicon diode
10/07/1980US4227202 Dual plane barrier-type two-phase CCD
10/07/1980US4226917 Composite joint system including composite structure of carbon fibers embedded in copper matrix
10/07/1980US4226898 Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
10/07/1980US4226650 Method of reducing emitter dip in transistors utilizing specifically paired dopants
10/07/1980US4226649 Gallium arsenide on germanium substrate
10/07/1980US4226648 Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy
10/07/1980CA1087322A1 Method for fabricating semiconductor devices using composite mask and ion implantation
10/07/1980CA1087320A1 Semiconductor switching device
10/07/1980CA1087309A1 Information memory for storing information in the form of electric charge carriers and method of operation thereof
10/01/1980EP0016636A1 CCD read-only memory
10/01/1980EP0016605A1 Integrated circuit resistance ladder
10/01/1980EP0016596A1 Semiconductor device having a monitor pattern and method of monitoring the same
10/01/1980EP0016577A1 Semiconductor integrated circuit device with a double interconnection layer
10/01/1980EP0016520A2 Semiconductor memory device
10/01/1980EP0016386A1 Erasably programmable semiconductor memories of the floating-gate type
10/01/1980EP0016246A1 Semiconductor field effect structure of the Metal-Insulator-Metal or Metal-Insulator-Semiconductor type, and memory device comprising such structure
09/1980
09/30/1980US4225879 V-MOS Field effect transistor for a dynamic memory cell having improved capacitance
09/30/1980US4225876 Monolithically integrated semiconductor arrangement
09/30/1980US4225875 Short channel MOS devices and the method of manufacturing same
09/30/1980US4225874 Semiconductor device having integrated diode
09/30/1980US4225409 Metallic modified material of intermetallic compound and a process for the production of the same
09/30/1980US4224733 Ion implantation method
09/30/1980CA1086868A1 Method of manufacturing a semiconductor device utilizing doped oxides and controlled oxidation
09/30/1980CA1086867A1 Method for fabricating semiconductor devices utilizing oxide protective layer
09/30/1980CA1086866A1 Self protection against breakover turn-on failure in thyristors
09/23/1980US4224635 Dynamic storage element having static storage element behavior
09/23/1980US4224634 Externally controlled semiconductor devices with integral thyristor and bridging FET components
09/23/1980US4224633 IGFET structure with an extended gate electrode end
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