| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/05/1979 | CA1056068A1 Semiconductor device |
| 06/05/1979 | CA1056058A1 Semiconductor image sensor having ccd shift register |
| 05/30/1979 | EP0002165A1 Method of manufacturing a conductor structure and application in a field effect transistor |
| 05/30/1979 | EP0002107A2 Method of making a planar semiconductor device |
| 05/30/1979 | EP0002087A1 Monolithic semiconductor device comprising two complementary transistors and method of making same |
| 05/30/1979 | EP0001986A2 Highly integrated memory matrix and method for its production |
| 05/29/1979 | US4156879 Passivated V-gate GaAs field-effect transistor |
| 05/29/1979 | US4156858 Charge transfer transversal filter |
| 05/29/1979 | US4156818 Operating circuitry for semiconductor charge coupled devices |
| 05/29/1979 | CA1055624A1 Resonant circuit using variable capacitance diode |
| 05/29/1979 | CA1055620A1 Semiconductor diffusions from ion implanted films |
| 05/29/1979 | CA1055619A1 Integrated semiconductor circuit arrangement |
| 05/29/1979 | CA1055618A1 Metal silicide conduction pattern |
| 05/29/1979 | CA1055617A1 Impatt diode production |
| 05/22/1979 | US4156289 Semiconductor memory |
| 05/22/1979 | US4156249 Solid state tunable capacitor |
| 05/22/1979 | US4156248 Gate turn-off semiconductor controlled rectifier device with highly doped buffer region portion |
| 05/22/1979 | US4156247 Two-phase continuous poly silicon gate CCD |
| 05/22/1979 | US4156246 Combined ohmic and Schottky output transistors for logic circuit |
| 05/22/1979 | US4156233 Charge transfer circuit with leakage current compensating means |
| 05/22/1979 | US4156152 Charge transfer circuit with leakage current compensating means |
| 05/22/1979 | US4155802 Method of producing semiconductor device involving the use of silicon nitride as an oxidation mask |
| 05/22/1979 | US4155784 Semiconductors, hydrochloric acid |
| 05/22/1979 | US4155778 Forming semiconductor devices having ion implanted and diffused regions |
| 05/22/1979 | US4155777 Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface |
| 05/22/1979 | US4155155 Metal layers applied by vacuum deposition and serigraphy |
| 05/22/1979 | CA1055165A1 Thyristor fired by overvoltage |
| 05/22/1979 | CA1055159A1 Charge transfer device manufacture |
| 05/22/1979 | CA1055115A1 Alternating current control circuits |
| 05/22/1979 | CA1054823A1 Hydrogen adsorption device for detection of hydrogen |
| 05/16/1979 | EP0001756A1 Circuit for reducing the turn-off time of a thyristor |
| 05/15/1979 | US4155121 Redundant charge-coupled device and method |
| 05/15/1979 | US4155014 Logic element having low power consumption |
| 05/15/1979 | US4154874 Of aluminum and a transition metal, annealing, masking |
| 05/15/1979 | US4154631 Equilibrium growth technique for preparing PbSx Se1-x epilayers |
| 05/15/1979 | US4154626 Process of making field effect transistor having improved threshold stability by ion-implantation |
| 05/15/1979 | US4153984 Method of fabricating an MNOS memory device |
| 05/15/1979 | CA1054725A1 Discontinuous semiconductor contact layers |
| 05/15/1979 | CA1054724A1 Correcting doping defects |
| 05/15/1979 | CA1054723A1 Insulated gate field effect transistor |
| 05/15/1979 | CA1054675A1 Flat-band voltage reference |
| 05/08/1979 | US4153909 Gated collector lateral transistor structure and circuits using same |
| 05/08/1979 | US4153906 Integrated circuit using an insulated gate field effect transistor |
| 05/08/1979 | US4153904 Semiconductor device having a high breakdown voltage junction characteristic |
| 05/08/1979 | US4153486 Silicon tetrachloride epitaxial process for producing very sharp autodoping profiles and very low defect densities on substrates with high concentration buried impurity layers utilizing a preheating in hydrogen |
| 05/02/1979 | EP0001586A1 Integrated semiconductor device with vertical NPN and PNP structures and method for its production |
| 05/02/1979 | EP0001574A1 Semiconductor device for resistance structures in high-density integrated circuits and method for making it |
| 05/02/1979 | EP0001550A1 Integrated semiconductor circuit for a small-sized structural element, and method for its production |
| 05/01/1979 | US4152716 Voltage dividing circuit in IC structure |
| 05/01/1979 | US4152714 Semiconductor apparatus |
| 05/01/1979 | CA1053797A1 Nondestructive charge sensing in a charge coupled device |
| 04/24/1979 | US4151546 Semiconductor device having electrode-lead layer units of differing thicknesses |
| 04/24/1979 | US4151542 Transistor |
| 04/24/1979 | US4151541 Power transistor |
| 04/24/1979 | US4151540 High beta, high frequency transistor structure |
| 04/24/1979 | US4151538 Nonvolatile semiconductive memory device and method of its manufacture |
| 04/24/1979 | US4151537 Metal-nitride-oxide-silicon, minimizing carrier injection |
| 04/24/1979 | US4151502 Semiconductor transducer |
| 04/24/1979 | US4151425 Voltage sequencing circuit for sequencing voltages to an electrical device |
| 04/24/1979 | US4151172 Hypotensive agents |
| 04/24/1979 | US4151058 Method for manufacturing a layer of amorphous silicon usable in an electronic device |
| 04/24/1979 | US4151021 Computers, read only memory |
| 04/24/1979 | US4151020 Minicomputers and microprocessors |
| 04/24/1979 | US4151011 Process of producing semiconductor thermally sensitive switching element by selective implantation of inert ions in thyristor structure |
| 04/24/1979 | US4151010 Forming adjacent impurity regions in a semiconductor by oxide masking |
| 04/24/1979 | US4151009 Fabrication of high speed transistors by compensation implant near collector-base junction |
| 04/24/1979 | US4151006 Polycrystalline silicon, thin dielectric layer, bipolar transistors |
| 04/24/1979 | CA1053381A1 Silicon on sapphire mos transistor |
| 04/24/1979 | CA1053380A1 Lateral bipolar transistor |
| 04/24/1979 | CA1053378A1 Method for reducing sidewall conduction in recessed oxide fet arrays |
| 04/24/1979 | CA1053376A1 Simplified complementary transistor process for making enhanced gain lateral transistor |
| 04/24/1979 | CA1053354A1 Light-controllable thyristor |
| 04/18/1979 | EP0001433A1 Bidirectional semiconductor switching device (Triac) |
| 04/17/1979 | USRE29971 Field effect semiconductor device having an unsaturated triode vacuum tube characteristic |
| 04/17/1979 | US4150391 Gate-controlled reverse conducting thyristor |
| 04/17/1979 | US4150390 Thyristor with gate and emitter shunts distributed over the cathode surface |
| 04/17/1979 | US4150389 N-channel memory field effect transistor |
| 04/17/1979 | US4150304 CCD Comparator |
| 04/17/1979 | US4149915 Boron and arsenic dopants in silicon |
| 04/17/1979 | US4149907 Conductivity modifier, blocking contact, codeposited insulating material and metal particles |
| 04/17/1979 | US4149906 Semiconductors, dopes |
| 04/17/1979 | US4149904 Method for forming ion-implanted self-aligned gate structure by controlled ion scattering |
| 04/10/1979 | US4149174 Majority charge carrier bipolar diode with fully depleted barrier region at zero bias |
| 04/10/1979 | US4149128 Charge transfer device transversal filter having electronically controllable weighting factors |
| 04/10/1979 | US4149095 Monolithic structure for storing electrical charges |
| 04/10/1979 | US4148672 Glass passivated gold diffused rectifier pellet and method for making |
| 04/10/1979 | US4148132 Method of fabricating a two-phase charge coupled device |
| 04/10/1979 | CA1052476A1 Method for manufacture of a semiconductor device |
| 04/10/1979 | CA1052457A1 Sensing circuit with four terminal semi-conductor device |
| 04/04/1979 | EP0001374A1 Metal base transistor witht amorphous hin semiconductor films |
| 04/04/1979 | EP0001361A1 Charge transfer device and transversal filter comprising such device |
| 04/04/1979 | EP0001300A1 Method of manufacturing a LOCOS semiconductor device |
| 04/03/1979 | US4148054 Method of manufacturing a semiconductor device and device manufactured by using the method |
| 04/03/1979 | US4148053 Thyristor containing channel stopper |
| 04/03/1979 | US4148049 Radiation hardened drain-source protected mnos transistor |
| 04/03/1979 | US4148047 Semiconductor apparatus |
| 04/03/1979 | US4148046 Semiconductor apparatus |
| 04/03/1979 | US4148044 N-channel memory field effect transistor |
| 04/03/1979 | US4148016 Digital to analog and analog to digital converters using CCD ramp generator |
| 04/03/1979 | CA1052009A1 Method for fabricating a semiconductor memory device |