| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/02/1982 | US4317276 Method of manufacturing an insulated gate field-effect transistor therefore in a silicon wafer |
| 03/02/1982 | US4317274 Method of producing a semiconductor device |
| 03/02/1982 | US4317273 Method of making high coupling ratio DMOS electrically programmable ROM |
| 03/02/1982 | US4317272 High density, electrically erasable, floating gate memory cell |
| 03/02/1982 | CA1119299A1 Inverse floating gate semiconductor devices |
| 02/24/1982 | EP0046422A1 GaAs field-effect transistor with non volatile memory |
| 02/24/1982 | EP0046371A1 Method of manufacturing a semiconductor device |
| 02/24/1982 | EP0046316A1 Semiconductor devices and their manufacture |
| 02/24/1982 | EP0046257A1 Semiconductor device |
| 02/23/1982 | US4317128 Two transistor switch |
| 02/23/1982 | US4317127 Static induction transistor and integrated circuit utilizing same |
| 02/23/1982 | US4317126 Silicon pressure sensor |
| 02/23/1982 | US4317125 Field effect devices and their fabrication |
| 02/23/1982 | US4317091 Negative semiconductor resistance |
| 02/23/1982 | US4317084 Oscillator that includes a charge-flow transistor |
| 02/23/1982 | US4316319 Method for making a high sheet resistance structure for high density integrated circuits |
| 02/23/1982 | CA1118909A1 Npn/pnp fabrication process with improved alignment |
| 02/23/1982 | CA1118892A1 Semiconductor device utilizing memory cells with sidewall charge storage regions |
| 02/17/1982 | EP0046107A1 Semiconductor device utilizable at very high frequencies, and method of making the same |
| 02/17/1982 | EP0046011A2 Semiconductor memory device |
| 02/17/1982 | EP0045891A2 High powered over-voltage protection |
| 02/17/1982 | EP0045848A1 Planar semiconductor integrated circuits including improved bipolar transistor structures and method of fabricating such circuits |
| 02/16/1982 | US4316209 Metal/silicon contact and methods of fabrication thereof |
| 02/16/1982 | US4316207 V-Groove semiconductor memory device |
| 02/16/1982 | US4316203 Insulated gate field effect transistor |
| 02/16/1982 | US4316202 Semiconductor integrated circuit device having a Schottky barrier diode |
| 02/16/1982 | US4316201 Low-barrier-height epitaxial Ge-GaAs mixer diode |
| 02/16/1982 | US4316140 Charge-flow transistors |
| 02/16/1982 | US4316101 Circuit for switching and transmitting alternating voltages |
| 02/16/1982 | US4316100 Charge transfer device with output detected within dynamic range |
| 02/16/1982 | US4315782 Method of making semiconductor device with passivated rectifying junctions having hydrogenated amorphous regions |
| 02/16/1982 | US4315781 Method of controlling MOSFET threshold voltage with self-aligned channel stop |
| 02/16/1982 | CA1118536A1 Epitaxial process for producing very sharp autodoping profiles and very low defect densities on substrates with high concentration buried impurity layers |
| 02/16/1982 | CA1118534A1 Methods for fabricating self-aligned bipolar transistors having polysilicon base contacts with polysilicon or metal emitter contacts |
| 02/16/1982 | CA1118533A1 Bipolar transistor stabilization structure |
| 02/16/1982 | CA1118532A1 Method of manufacturing a semiconductor device |
| 02/16/1982 | CA1118531A1 Semiconductor integrated logic circuit |
| 02/10/1982 | EP0045644A2 Metallic contacts to compound semiconductor devices |
| 02/10/1982 | EP0045578A2 Semiconductor memory device |
| 02/10/1982 | EP0045469A2 Non-volatile, programmable integrated semiconductor memory cell |
| 02/10/1982 | EP0045447A1 Transistor with high collector-emitter breakdown voltage |
| 02/09/1982 | US4315274 Thyristor with switchable capacitor between auxiliary thyristor cathode and main thyristor gate regions |
| 02/09/1982 | US4315272 Field effect transistor |
| 02/09/1982 | US4315271 Power transistor and method of manufacturing same |
| 02/09/1982 | US4315236 Pressure sensor |
| 02/09/1982 | US4315164 Bidirectional charge control circuit |
| 02/09/1982 | US4314857 Method of making integrated CMOS and CTD by selective implantation |
| 02/09/1982 | CA1118113A1 Self-aligned narrow gate mesfet process |
| 02/04/1982 | WO1982000385A1 Method and means of resistively contacting and interconnecting semiconductor devices |
| 02/03/1982 | EP0045195A2 Semiconductor device, a method of making a low-resistance contact between a metal and a layer of polycrystalline P-type CdTe in said semiconductor device and a cadmium-selective etchant which is useful for said method |
| 02/03/1982 | EP0045181A2 High electron mobility heterojunction semiconductor device and method of manufacturing |
| 02/03/1982 | EP0045046A1 Semiconductor device and its use in a static 6-transistor cell |
| 02/03/1982 | EP0044950A2 Method of making a matrix of interconnected semiconductor devices |
| 02/02/1982 | US4314360 Semiconductor memory device |
| 02/02/1982 | US4314359 Semiconductor memory device |
| 02/02/1982 | US4314269 Semiconductor resistor comprising a resistor layer along a side surface |
| 02/02/1982 | US4314268 Integrated circuit with shielded lead patterns |
| 02/02/1982 | US4314267 Dense high performance JFET compatible with NPN transistor formation and merged BIFET |
| 02/02/1982 | US4314266 Thyristor with voltage breakover current control separated from main emitter by current limit region |
| 02/02/1982 | US4314265 Dense nonvolatile electrically-alterable memory devices with four layer electrodes |
| 02/02/1982 | US4314227 Electronic pressure sensitive transducer apparatus |
| 02/02/1982 | US4314226 Pressure sensor |
| 02/02/1982 | US4314225 Pressure sensor having semiconductor diaphragm |
| 02/02/1982 | US4314202 Flexural vibration sensor with magnetic field generating and sensing |
| 02/02/1982 | US4314163 Input stage for a charge transfer device (CTD) arrangement |
| 02/02/1982 | US4314162 Filter circuit utilizing charge transfer device |
| 02/02/1982 | US4313809 Method of reducing edge current leakage in N channel silicon-on-sapphire devices |
| 02/02/1982 | US4313782 Method of manufacturing submicron channel transistors |
| 02/02/1982 | US4313768 Method of fabricating improved radiation hardened self-aligned CMOS having Si doped Al field gate |
| 02/02/1982 | US4313256 Method of producing integrated MOS circuits via silicon gate technology |
| 02/02/1982 | US4313255 Method for manufacturing integrated circuit device |
| 02/02/1982 | CA1117666A1 Diode chip with identifying shape |
| 02/02/1982 | CA1117654A1 Ccd gain control |
| 01/27/1982 | EP0044426A2 Method for forming an integrated injection logic circuit |
| 01/27/1982 | EP0044400A2 FET memory cell structure and process |
| 01/27/1982 | EP0044384A2 Electrically alterable read only memory cell |
| 01/26/1982 | US4313178 Analog solid state memory |
| 01/26/1982 | US4313126 Field effect transistor |
| 01/26/1982 | US4312680 Self-aligned process; lateral diffusion of etch limiting element |
| 01/26/1982 | US4312113 For operation at microwave frequencies |
| 01/26/1982 | US4312112 Method of making field-effect transistors with micron and submicron gate lengths |
| 01/20/1982 | EP0044048A1 Glass passivated high power semiconductor devices |
| 01/20/1982 | EP0044021A1 Electrical resistance for semiconductor integrated circuits consisting of MIS field-effect transistors |
| 01/20/1982 | EP0043944A2 Method for making a self-aligned field effect transistor integrated circuit structure |
| 01/20/1982 | EP0043943A2 Method for forming field effect transistor integrated circuits having a pattern of narrow dimensioned dielectric regions and resulting structures |
| 01/20/1982 | EP0043942A2 Method for forming integrated circuits having a pattern of narrow dimensioned dielectric regions |
| 01/19/1982 | US4312011 Darlington power transistor |
| 01/19/1982 | US4311923 Device for regulating the threshold voltages of I.G.F.E.T. transistors circuitry |
| 01/19/1982 | US4311727 Method for multilayer circuits and methods for making the structure |
| 01/19/1982 | US4311534 Reducing the reverse recovery charge of thyristors by nuclear irradiation |
| 01/19/1982 | US4311533 Method of making self-aligned differently doped regions by controlled thermal flow of photoresist layer |
| 01/13/1982 | EP0043691A2 Semiconductor device having a polycrystalline semiconductor film |
| 01/13/1982 | EP0043654A2 Improvement in or relating to semiconductor diodes and their fabrication |
| 01/13/1982 | EP0043451A2 Process for selectively forming refractory metal silicide layers on semiconductor devices |
| 01/12/1982 | US4310570 Field-effect transistors with micron and submicron gate lengths |
| 01/12/1982 | US4310568 Method of fabricating improved Schottky barrier contacts |
| 01/12/1982 | US4310362 Method of making Schottky diode with an improved voltage behavior |
| 01/12/1982 | US4309812 Process for fabricating improved bipolar transistor utilizing selective etching |
| 01/12/1982 | CA1116313A1 Process for providing self-aligned doping regions |
| 01/12/1982 | CA1116309A1 Structure and process for optimizing the characteristics of i.sup.2l devices |