| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/03/1980 | US4206469 Power metal-oxide-semiconductor-field-effect-transistor |
| 06/03/1980 | US4206371 CCD with differently doped substrate regions beneath a common electrode |
| 06/03/1980 | US4206005 Method of making split gate LSI VMOSFET |
| 06/03/1980 | CA1078948A1 Method of fabricating silicon photodiodes |
| 05/29/1980 | WO1980001122A1 Semiconductor memory device |
| 05/28/1980 | EP0011570A1 Filter device using charge transfer in a semiconductor |
| 05/28/1980 | EP0011477A1 Self-aligned MESFET and method of making same |
| 05/28/1980 | EP0011443A1 Semiconductor integrated circuit device |
| 05/28/1980 | EP0011261A1 Charge transfer apparatus |
| 05/28/1980 | EP0011259A1 Charge transfer apparatus |
| 05/28/1980 | EP0011120A1 Semiconductor device having improved current gain and process for its production |
| 05/27/1980 | US4205342 Integrated circuit structure having regions of doping concentration intermediate that of a substrate and a pocket formed therein |
| 05/27/1980 | US4205334 Integrated semiconductor device |
| 05/27/1980 | US4205333 Lateral transistor with multi-base contacts |
| 05/27/1980 | US4205332 Quick-quenching power transistor |
| 05/27/1980 | US4205329 Periodic monolayer semiconductor structures grown by molecular beam epitaxy |
| 05/27/1980 | US4205263 Temperature compensated constant current MOS field effective transistor circuit |
| 05/27/1980 | US4204894 Process for fabrication of semiconductors utilizing selectively etchable diffusion sources in combination with melt-flow techniques |
| 05/27/1980 | CA1078530A1 Method of manufacturing transistors by means of ion implantation |
| 05/27/1980 | CA1078529A1 Fabrication of semiconductive devices |
| 05/27/1980 | CA1078528A1 Method for producing pressed contact power semiconductors |
| 05/27/1980 | CA1078517A1 Non-volatile memory device and method of making the same |
| 05/27/1980 | CA1078516A1 Bulk charge coupled devices with read out gates |
| 05/27/1980 | CA1078217A1 Force transducing cantilever beam and pressure transducer incorporating it |
| 05/20/1980 | US4204217 Transistor using liquid crystal |
| 05/20/1980 | US4203781 Laser deformation of semiconductor junctions |
| 05/20/1980 | US4203780 Subsequent heat treatment |
| 05/20/1980 | CA1078078A1 Schottky barrier semiconductor device and method of making same |
| 05/20/1980 | CA1078077A1 Self-registering method of fabricating field effect transistors |
| 05/20/1980 | CA1078075A1 Power diode |
| 05/20/1980 | CA1078074A1 High speed high power two terminal solid state switch fired by dv/dt |
| 05/20/1980 | CA1078073A1 Semiconductor device |
| 05/20/1980 | CA1077812A1 Producing p-type conductivity in self-compensating semiconductor material |
| 05/15/1980 | WO1980001021A1 Semiconductor circuit |
| 05/14/1980 | EP0010633A1 Method for forming very narrow doping regions in a semiconductor body and use of this method for producing semiconductor regions insulated from each other, bipolar semiconductor devices, integrated injection logics and double-diffused FET semiconductor devices |
| 05/14/1980 | EP0010624A1 Process for the realization of very narrow mask openings for the manufacture of semiconductor integrated circuits |
| 05/14/1980 | EP0010623A1 Method for forming a laminated structure for highly integrated semiconductor devices with an insulating layer between two conductive layers |
| 05/14/1980 | EP0010596A1 Method of forming openings in masks for the production of semiconductor devices |
| 05/13/1980 | US4203158 Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same |
| 05/13/1980 | US4203128 Electrostatically deformable thin silicon membranes |
| 05/13/1980 | US4203125 Buried storage punch through dynamic ram cell |
| 05/13/1980 | US4203124 Low noise multistage avalanche photodetector |
| 05/13/1980 | US4203123 Thin film memory device employing amorphous semiconductor materials |
| 05/13/1980 | US4203042 Integrated circuit |
| 05/13/1980 | US4202799 Organic-heat-sensitive semiconductive compounds |
| 05/06/1980 | US4202005 Distributed collector ballast resistor structure |
| 05/06/1980 | US4202003 MESFET Semiconductor device and method of making |
| 05/06/1980 | US4202002 Ion-implanted layers with abrupt edges |
| 05/06/1980 | US4202001 Semiconductor device having grid for plating contacts |
| 05/06/1980 | US4202000 Diode capable of alternately functioning as an emitter and detector of light of the same wavelength |
| 05/06/1980 | US4201999 Transition metal layer, intermetallic layer, aluminum layer |
| 05/06/1980 | US4201998 Devices with Schottky metal contacts filling a depression in a semi-conductor body |
| 05/06/1980 | US4201997 MESFET semiconductor device and method of making |
| 05/06/1980 | US4201800 Hardened photoresist master image mask process |
| 05/06/1980 | US4201604 Process for making a negative resistance diode utilizing spike doping |
| 05/06/1980 | US4201603 Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon |
| 05/06/1980 | US4201598 Electron irradiation process of glass passivated semiconductor devices for improved reverse characteristics |
| 05/06/1980 | US4200968 VMOS transistor and method of fabrication |
| 05/06/1980 | CA1076934A1 Edge etch method and structure for producing narrow openings to the surface of materials |
| 04/30/1980 | EP0010204A1 Semiconductor absolute pressure transducer assembly |
| 04/30/1980 | EP0010137A1 Substrate polarisation voltage generator circuit |
| 04/29/1980 | US4200879 Integrated semiconductor device including static induction transistor |
| 04/29/1980 | US4200878 Method of fabricating a narrow base-width bipolar device and the product thereof |
| 04/29/1980 | US4200877 Temperature-compensated voltage reference diode with intermediate polycrystalline layer |
| 04/29/1980 | US4200848 Transversal filter |
| 04/29/1980 | US4200474 Method of depositing titanium dioxide (rutile) as a gate dielectric for MIS device fabrication |
| 04/29/1980 | CA1076700A1 Complementary input structure for charge coupled device |
| 04/22/1980 | US4199777 Semiconductor device and a method of manufacturing the same |
| 04/22/1980 | US4199775 Integrated circuit and method for fabrication thereof |
| 04/22/1980 | US4199774 Monolithic semiconductor switching device |
| 04/22/1980 | US4199773 Insulated gate field effect silicon-on-sapphire transistor and method of making same |
| 04/22/1980 | US4199772 Semiconductor memory device |
| 04/22/1980 | US4199771 Static induction transistor |
| 04/22/1980 | US4199695 Avoidance of hot electron operation of voltage stressed bootstrap drivers |
| 04/22/1980 | US4199380 Integrated circuit method |
| 04/22/1980 | US4199378 Sunken oxide and two step doping |
| 04/22/1980 | CA1076257A1 Charge coupled devices |
| 04/17/1980 | WO1980000765A1 Low noise multistage avalanche photodetector |
| 04/16/1980 | EP0010039A1 Electric charge transfer filtration device |
| 04/16/1980 | EP0009782A1 CMOS Semiconductor device |
| 04/15/1980 | US4198693 VMOS Read only memory |
| 04/15/1980 | US4198649 Memory cell structure utilizing conductive buried regions |
| 04/15/1980 | US4198648 Integrated semiconductor device |
| 04/15/1980 | US4198645 Semiconductor controlled rectifier having gate grid dividing surrounding zone into two different impurity concentration sections |
| 04/15/1980 | US4198644 Tunnel diode |
| 04/15/1980 | US4198252 Metal-nitride-oxide semiconductor |
| 04/15/1980 | US4198250 Shadow masking process for forming source and drain regions for field-effect transistors and like regions |
| 04/15/1980 | US4197631 Thyristors, metallization, passivation |
| 04/15/1980 | US4197630 Metal nitride oxide semiconductor |
| 04/15/1980 | CA1075831A1 Forming silicon integrated circuit region by the implantation of arsenic and germanium |
| 04/15/1980 | CA1075830A1 Glass passivated junction semiconductor devices |
| 04/15/1980 | CA1075826A1 Integrated circuit with static induction transistor |
| 04/15/1980 | CA1075812A1 Charge transfer logic apparatus |
| 04/15/1980 | CA1075811A1 Charge coupled device |
| 04/08/1980 | USRE30251 Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same |
| 04/08/1980 | US4197551 Semiconductor device having improved Schottky-barrier junction |
| 04/08/1980 | US4197511 Linear load MOS transistor circuit |
| 04/08/1980 | US4197469 Capacitively coupled array of photodetectors |
| 04/08/1980 | US4197147 Method of manufacturing an integrated circuit including an analog circuit and an I2 L circuit utilizing staged diffusion techniques |
| 04/08/1980 | US4197143 Smaller memory circuits than heretofore available |