Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1979
11/14/1979EP0005351A1 A method of making a narrow gate MESFET
11/14/1979EP0005185A1 Method for simultaneously forming Schottky-barrier diodes and ohmic contacts on doped semiconductor regions
11/14/1979EP0005183A1 Semiconductive field-effect transistor used as a field sensor, in particular as a magnetic field sensor
11/14/1979EP0005181A1 Method of making a semiconductor device comprising components of the field effect type
11/14/1979EP0005166A1 Method of manufacturing semiconductor devices with insulated areas of polycrystalline silicon and semiconductor devices thus produced
11/14/1979EP0005165A1 Method of manufacturing insulated conductors of polycrystalline silicon as well as correspondingly constructed semiconductor devices with field effect elements
11/14/1979EP0005164A1 Process for manufacturing integrated implanted logic circuits with a hardened photoresist mask
11/13/1979US4174521 Palladium silicide layer on single crystal silicon substrate, second layer of amorphous silicon and third layer of contact material
11/13/1979US4174217 Method for making semiconductor structure
11/13/1979US4173900 Semiconductor pressure transducer
11/13/1979US4173818 Multistage masking, etching, and doping
11/13/1979CA1066431A1 Semiconductor device manufacture
11/13/1979CA1066430A1 High speed fet employing ternary and quarternary iii-v active layers
11/13/1979CA1066429A1 Negative resistance diode and process for making same
11/13/1979CA1066428A1 Thyristors
11/13/1979CA1066427A1 Semiconductor junction coatings of polyimide silicone copolymer
11/06/1979US4173791 Insulated gate field-effect transistor read-only memory array
11/06/1979US4173766 Insulated gate field-effect transistor read-only memory cell
11/06/1979US4173765 V-MOS imaging array
11/06/1979US4173764 Field effect transistor on a support having a wide forbidden band
11/06/1979US4173763 Heterojunction tunneling base transistor
11/06/1979US4173148 Semiconductor strain gauge with temperature compensator
11/06/1979US4173064 Split gate electrode, self-aligned antiblooming structure and method of making same
11/06/1979US4173063 Fabrication of a semiconductor component element having a Schottky contact and little series resistance utilizing special masking in combination with ion implantation
11/06/1979CA1065978A1 Image sensor device
10/1979
10/31/1979EP0005125A1 Method for manufacturing contacts on semiconductor devices and devices made by this method
10/31/1979EP0005059A2 A semiconductor device having a layered structure and a method of making it
10/31/1979EP0004871A1 Monolithic integrated semiconductor device with at least one I2L structure, memory cell using such device and memory matrix using such memory cell
10/31/1979EP0004870A1 Transversal filter with parallel inputs
10/30/1979US4173022 Integrated gate field effect transistors having closed gate structure with controlled avalanche characteristics
10/30/1979US4172983 Charge transfer filter
10/30/1979US4172741 Method for laser trimming of bi-FET circuits
10/30/1979CA1065497A1 Method of forming recessed oxide isolation
10/30/1979CA1065494A1 Reverse switching rectifier and method for making same
10/30/1979CA1065493A1 Gate-assisted thyristor and method including cathode shunts
10/23/1979US4172261 Semiconductor device having a highly air-tight package
10/23/1979US4172260 Insulated gate field effect transistor with source field shield extending over multiple region channel
10/23/1979US4172158 Protective cotaings for semiconductors
10/23/1979US4171997 Method of producing polycrystalline silicon components, particularly solar elements
10/23/1979US4171996 Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process
10/23/1979US4171995 Epitaxial deposition process for producing an electrostatic induction type thyristor
10/18/1979WO1979000817A1 Semiconductor device comprising at least two semiconductor elements
10/18/1979WO1979000776A1 Amorphous semiconductors equivalent to crystalline semiconductors
10/17/1979EP0004563A1 Transversal filter
10/16/1979US4171528 Solderable zener diode
10/16/1979US4170818 Barrier height voltage reference
10/09/1979US4170502 Method of manufacturing a gate turn-off thyristor
10/09/1979US4170500 Process for forming field dielectric regions in semiconductor structures without encroaching on device regions
10/09/1979CA1064164A1 Method for controlling lateral doping profiles in semiconductor device
10/09/1979CA1064163A1 Metal oxide semiconductor field effect transistor
10/09/1979CA1064150A1 Light activated thyristor
10/04/1979WO1979000736A1 Transistors
10/03/1979EP0004292A2 Process of making a MESA bipolar transistor with self-aligned base and emitter regions
10/02/1979US4170021 Electronic article with orientation-identifying surface shape
10/02/1979US4170020 Gate turn-off thyristor for reducing the on current thereof
10/02/1979US4170019 Semiconductor device with variable grid openings for controlling turn-off pattern
10/02/1979US4170017 Highly integrated semiconductor structure providing a diode-resistor circuit configuration
10/02/1979US4169746 Method for making silicon on sapphire transistor utilizing predeposition of leads
10/02/1979US4169740 Method of doping a body of amorphous semiconductor material by ion implantation
10/02/1979CA1063732A1 Semiconductor device with pressure electrical contacts having irregular surfaces
10/02/1979CA1063731A1 Method for making transistor structures having impurity regions separated by a short lateral distance
09/1979
09/25/1979US4169291 Eprom using a V-MOS floating gate memory cell
09/25/1979US4169269 Junction field effect transistor
09/25/1979US4169231 Buried channel to surface channel CCD charge transfer structure
09/25/1979US4168630 Semiconductor pressure converter
09/25/1979CA1063254A1 Electrostatically bonded semiconductor-on-insulator mos device, and a method of making the same
09/25/1979CA1063251A2 Field effect transistor having improved threshold stability
09/25/1979CA1063250A1 Integrated gate assisted turn-off, amplifying gate thyristor, and a method for making the same
09/25/1979CA1063189A1 Configuration for reducing the turn-off time of a thyristor
09/19/1979EP0004238A1 Integrated circuit and method of manufacturing it
09/19/1979EP0004219A1 Integrated circuit with a two-level interconnection structure; method of making such a circuit
09/19/1979EP0003963A1 Field effect transistor protection circuit and its use in clock phase generators
09/18/1979US4168538 Monolithically integrated semiconductor store
09/11/1979US4167745 MIS-type field effect transistor and method of producing the same
09/11/1979US4167425 Method for producing lateral bipolar transistor by ion-implantation and controlled temperature treatment
09/11/1979CA1062355A1 Charge coupled image sensor device
09/05/1979EP0003926A1 Method of production of an insulated gate field effect transistor
09/05/1979EP0003733A1 Process for the generation of windows having stepped edges within material layers of insulating material or of material for electrodes for the production of an integrated semiconductor circuit and MIS field-effect transistor with short channel length produced by this process
09/04/1979US4167018 MIS capacitance element
09/04/1979US4167017 CCD structures with surface potential asymmetry beneath the phase electrodes
09/04/1979US4167015 Cermet layer for amorphous silicon solar cells
09/04/1979CA1061915A1 Method of fabricating metal-semiconductor interfaces
09/04/1979CA1061903A1 Buried channel ccd with charge propagation beneath gaps between parallel electrode means
09/04/1979CA1061885A1 Radiation sensitive semiconductor device
09/04/1979CA1061688A1 Silicon crystals and process for their preparation
08/1979
08/28/1979USRE30087 Coherent sampled readout circuit and signal processor for a charge coupled device array
08/28/1979US4166223 Dual field effect transistor structure for compensating effects of threshold voltage
08/28/1979CA1061473A1 Negative resistance diode and process for making same
08/28/1979CA1061471A1 Controlled thickness of dielectric films on conductor edges
08/21/1979US4165539 Bidirectional serial-parallel-serial charge-coupled device
08/21/1979US4165537 Analog charge transfer apparatus
08/21/1979US4165517 Self-protection against breakover turn-on failure in thyristors through selective base lifetime control
08/21/1979US4165516 Semiconductor device and method of manufacturing same
08/21/1979US4165402 Chip-removing machining method and apparatus for semiconducting crystals, specifically suited for the production of force and pressure measuring cells
08/21/1979CA1061015A1 Fabrication of a semiconductor device of indium antimonide
08/21/1979CA1061014A1 Field effect transistor structure and method for making same
08/21/1979CA1061012A1 Complementary field effect transistor having p doped silicon gates and process for making the same
08/21/1979CA1061010A1 Process for the production of an inversely operating transistor
08/21/1979CA1061009A1 High density semiconductor chip organization
08/21/1979CA1060993A1 Nonvolatile semiconductor memory
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