Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1981
11/11/1981EP0039392A1 Stabilized magnetically sensitive avalanche transistor
11/10/1981US4300212 Nonvolatile static random access memory devices
11/10/1981US4300152 Complementary field-effect transistor integrated circuit device
11/10/1981US4300151 Change transfer device with PN Junction gates
11/10/1981US4300150 Lateral double-diffused MOS transistor device
11/10/1981US4300149 Gold-tantalum-titanium/tungsten alloy contact for semiconductor devices and having a gold/tantalum intermetallic barrier region intermediate the gold and alloy elements
11/10/1981US4300148 Semiconductor device gate-drain configuration
11/10/1981US4300062 Offset compensation circuit for charge-coupled devices
11/10/1981US4299024 Fabrication of complementary bipolar transistors and CMOS devices with poly gates
11/10/1981CA1112374A1 Method for forming self-aligned field effect device by ion implantation
11/10/1981CA1112373A1 Gate turn-off diodes and arrangments including such diodes
11/10/1981CA1112306A1 Integrated circuits
11/04/1981EP0039192A2 CCD imager detector buffer
11/04/1981EP0039174A1 Gold metallisation in semiconductor devices
11/04/1981EP0039015A2 Planar transistor, especially for I2L structures
11/04/1981EP0038994A2 Contact for MIS semiconductor device and method of making the same
11/03/1981US4298962 Memory
11/03/1981US4298882 Multilayer semiconductor element
11/03/1981US4298881 Semiconductor device with double moat and double channel stoppers
11/03/1981US4298880 Power thyristor and method of fabrication therefore utilizing control, generating, and firing gates
11/03/1981US4298879 Field effect transistor
11/03/1981US4298629 Gas plasma of nitrogen-containing gas
11/03/1981US4298403 Ion-implanted evaporated germanium layers as n+ contacts to GaAs
11/03/1981US4298402 Using doped polycrystalline silicon layer as mask
11/03/1981US4298401 Breakdown voltage resistor obtained through a double ion-implantation into a semiconductor substrate, and manufacturing process of the same
11/03/1981US4297783 Method of fabricating GaAs devices utilizing a semi-insulating layer of AlGaAs in combination with an overlying masking layer
11/03/1981US4297782 Method of manufacturing semiconductor devices
10/1981
10/29/1981WO1981003086A1 Silicon pressure sensor
10/29/1981WO1981003083A1 Magnetotransistor detector
10/28/1981EP0038725A1 Photosensitive device read by charge transfer and television camera comprising such a device
10/27/1981US4297719 Electrically programmable control gate injected floating gate solid state memory transistor and method of making same
10/27/1981US4297718 Vertical type field effect transistor
10/27/1981US4297717 Semiconductor device
10/27/1981US4297654 Crystal oscillator including a MOS-capacitor
10/27/1981US4297597 Darlington-connected semiconductor device
10/27/1981CA1111572A1 Gate charge neutralization for insulated gate field- effect transistors
10/27/1981CA1111571A1 Semiconductor element capable of withstanding high voltage and method of manufacturing the same
10/27/1981CA1111570A1 Tantalum semiconductor contacts and method for fabricating same
10/27/1981CA1111560A1 Sensing circuit for semiconductor charge transfer devices
10/27/1981CA1111514A1 Multidrain metal-oxide-semiconductor field-effect device
10/21/1981EP0038248A1 High power vertical channel junction gate field effect transistor and process for its manufacture
10/21/1981EP0038239A1 Blockable diode and method of manufacturing the same
10/21/1981EP0038238A1 Method of manufacturing of a semiconductor device having an inset grid accessible from the surface
10/21/1981EP0038178A1 Method of manufacturing a semiconductor device containing a Schottky barrier, and device
10/21/1981EP0038133A1 Method of manufacturing semiconductor devices with submicron lines
10/21/1981EP0038079A1 Method for manufacturing a semiconductor integrated circuit device
10/21/1981EP0037930A1 Semiconductor memory device
10/21/1981EP0037876A2 Electrochemical eroding process for semiconductors
10/21/1981EP0037818A1 Current source having saturation protection.
10/20/1981US4296429 VMOS Transistor and method of fabrication
10/20/1981US4296428 Merged field effect transistor circuit and fabrication process
10/20/1981US4296427 Reverse conducting amplified gate thyristor with plate-like separator section
10/20/1981US4296426 Process for producing an MOS-transistor and a transistor produced by this process
10/20/1981US4296336 Switching circuit and method for avoiding secondary breakdown
10/20/1981US4295923 Method of manufacturing a semiconductor/glass composite material
10/20/1981US4295267 Two-mask VJ-FET transistor structure
10/20/1981US4295266 Method of manufacturing bulk CMOS integrated circuits
10/20/1981US4295265 Method for producing a nonvolatile semiconductor memory
10/20/1981US4295264 Silicon, silicon oxide coating as mask, diffusing impurity, metal oxide semiconductor capacitor
10/20/1981CA1111149A1 Passivation of semiconductor elements
10/20/1981CA1111148A1 Large-area, high-voltage thyristor
10/20/1981CA1111147A1 Method of modifying electrical characteristics of mos devices using ion implantation
10/20/1981CA1111146A1 Method of manufacturing semiconductor device
10/20/1981CA1111138A1 Method of making a charge transfer device
10/20/1981CA1111137A1 Compact, two-phase charge-coupled-device structure utilizing multiple layers of conductive material
10/15/1981WO1981002949A1 Complementary field-effect transistor integrated circuit device
10/14/1981EP0037764A1 Unipolar functioning semiconductor device structure with guard ring
10/14/1981EP0037685A1 Method of producing a semiconductor device
10/14/1981EP0037402A1 Semiconductor memory having a stabilized substrate bias and narrow-width transfer gates.
10/14/1981EP0037401A1 OHMIC CONTACT TO P-TYPE InP OR InGaAsP.
10/13/1981US4295176 Semiconductor integrated circuit protection arrangement
10/13/1981US4295150 Storage transistor
10/13/1981US4295148 Method of fabrication of electroluminescent and photodetecting diodes
10/13/1981US4295115 Semiconductor absolute pressure transducer assembly and method
10/13/1981US4295059 High gain latching Darlington transistor
10/13/1981US4294002 Making a short-channel FET
10/13/1981CA1110780A1 Method of manufacturing a semiconductor device
10/13/1981CA1110773A1 Integrated digital multiplier circuit using current mode logic
10/13/1981CA1110421A1 Cadmium mercury telluride sputtering targets
10/07/1981EP0037261A1 A method of manufacturing a semiconductor device, and a device, for example a BOMIS FET, so manufactured
10/07/1981EP0037201A2 Electrically erasable MOSFET storage device
10/07/1981EP0037200A1 Charge coupled device with buried channel stop
10/07/1981EP0037115A1 Planar semiconductor with increased breakdown voltage
10/07/1981EP0037105A2 Field effect transistor
10/07/1981EP0037005A1 Non rectifying low resistance contact on a III-V compound-semiconductor and method of manufacturing it
10/06/1981US4293868 Semiconductor device, method of manufacturing the same and application thereof
10/06/1981US4293832 Transversal charge transfer filter
10/06/1981US4293831 Monolithically integrated charge transfer circuit
10/06/1981US4293588 Method of manufacturing a semiconductor device using different etch rates
10/06/1981US4293373 Boron dopes, silicon frame, etching
10/06/1981US4292729 Electron-beam programmable semiconductor device structure
10/01/1981WO1981002810A1 Electrically erasable mosfet storage device
09/1981
09/30/1981EP0036802A1 Method of manufacturing amorphous semiconductor memory devices
09/30/1981EP0036791A1 Inverter using low threshold field effect transistors and a switching diode
09/30/1981EP0036634A1 Method of making a bipolar transistor structure
09/30/1981EP0036620A2 Semiconductor device and method for fabricating the same
09/30/1981EP0036573A2 Method for making a polysilicon conductor structure
09/30/1981EP0036501A1 Semiconductor inversion layer transistor
09/30/1981EP0036500A1 Method for making stable nitride-defined Schottky barrier diodes
09/30/1981EP0036499A1 A polysilicon-base self-aligned bipolar transistor process
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