Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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04/27/1982 | US4327320 Reference voltage source |
04/27/1982 | US4326332 Method of making a high density V-MOS memory array |
04/27/1982 | US4326331 High coupling ratio electrically programmable ROM |
04/27/1982 | US4326330 Process for producing a self-aligned grid field-effect transistor |
04/27/1982 | CA1122721A1 Linear semiconductor resistor |
04/27/1982 | CA1122720A1 Band interacting tunnel hetrojunctions |
04/21/1982 | EP0050064A2 Field effect transistor having a high cut-off frequency |
04/20/1982 | US4326212 Structure and process for optimizing the characteristics of I2 L devices |
04/20/1982 | US4326209 Static induction transistor |
04/20/1982 | US4326208 Semiconductor inversion layer transistor |
04/20/1982 | US4325747 Method of making a MESFET having same type conductivity for source, drain, and gate regions |
04/20/1982 | US4325181 Simplified fabrication method for high-performance FET |
04/20/1982 | US4325180 Process for monolithic integration of logic, control, and high voltage interface circuitry |
04/20/1982 | CA1122331A1 High power amplifier/switch using gated diode switch |
04/14/1982 | EP0049445A2 Self firing thyristor |
04/14/1982 | EP0049392A2 Method of making a two-transistor monolithic integrated memory cell using MOS technology |
04/14/1982 | EP0049344A2 Capacitive pressure transducers and methods of fabricating them |
04/14/1982 | EP0049326A1 Semi-conductor memory device for digital and analog memory application using single MOSFET memory cells |
04/13/1982 | US4325097 Four terminal pulse suppressor |
04/13/1982 | US4325074 Semiconductor switching device |
04/13/1982 | US4325073 Field effect devices and their fabrication |
04/13/1982 | US4324038 Forming source and drain electrodes prior to growth of gate oxide |
04/07/1982 | EP0048849A2 Methods of producing Schottky barrier silicide contacts on silicon subtrates and silicon semiconductor devices provided with Schottky barrier silicide contacts |
04/07/1982 | EP0048815A2 Non-volatile static semiconductor memory cell |
04/07/1982 | EP0048814A2 Non-volatile semiconductor memory cell |
04/06/1982 | US4323985 Two dimensional acousto-electrical device for storing and processing information |
04/06/1982 | US4323942 Solid-state protector circuitry using gated diode switch |
04/06/1982 | US4323913 Integrated semiconductor circuit arrangement |
04/06/1982 | US4323910 MNOS Memory transistor |
04/06/1982 | US4323909 Planar avalanche diode with a breakdown voltage between 4 and 8 volts |
04/06/1982 | US4323791 Substraction and charge quantity generation charge transfer device |
04/06/1982 | US4323405 Casing having a layer for protecting a semiconductor memory to be sealed therein against alpha particles and a method of manufacturing same |
04/06/1982 | US4322883 Self-aligned metal process for integrated injection logic integrated circuits |
04/06/1982 | US4322881 Method for manufacturing semiconductor memory devices |
04/06/1982 | CA1121520A1 Self-terminating thermal oxidation of a1-containing group iii-v compound layers |
04/06/1982 | CA1121519A1 Field effect semiconductor devices |
04/06/1982 | CA1121518A1 Semiconductor integrated circuit device |
04/06/1982 | CA1121517A1 High voltage dielectrically isolated remote gate solid-state switch |
04/06/1982 | CA1121516A1 Power metal-oxide-semiconductor-field-effect- transistor |
04/01/1982 | WO1982001103A1 Emitter design for improved rbsoa and switching of power transistors |
03/31/1982 | EP0048474A1 Self-substrate-bias circuit device |
03/31/1982 | EP0048358A2 Integrated power transistor |
03/31/1982 | EP0048291A1 Structure with a silicon body that presents an aperture and method of making this structure |
03/30/1982 | US4322823 Storage system having bilateral field effect transistor personalization |
03/30/1982 | US4322767 Bidirectional solid-state protector circuitry using gated diode switches |
03/30/1982 | US4322738 N-Channel JFET device compatible with existing bipolar integrated circuit processing techniques |
03/30/1982 | US4322736 Short-resistant connection of polysilicon to diffusion |
03/30/1982 | US4322675 Regulated MOS substrate bias voltage generator for a static random access memory |
03/30/1982 | US4322453 Conductivity WSi2 (tungsten silicide) films by Pt preanneal layering |
03/30/1982 | US4322452 Process for passivating semiconductor members |
03/30/1982 | CA1121070A1 Method for forming semiconductor contacts |
03/30/1982 | CA1121038A1 Heterojunction photodiode of the avalanche type |
03/30/1982 | CA1120820A1 Pine oil cleaner disinfectant compositions containing quaternary ammonium compound |
03/23/1982 | US4321616 Field controlled high value resistor with guard band |
03/23/1982 | US4321613 Field effect devices and their fabrication |
03/23/1982 | US4321612 Schottky barrier contact to compound semiconductor with three layer refractory metalization and high phosphorous content glass passivation |
03/23/1982 | US4321584 Charge coupled digital-to-analog converter |
03/23/1982 | US4320664 Thermally compensated silicon pressure sensor |
03/23/1982 | US4320571 Stencil mask process for high power, high speed controlled rectifiers |
03/23/1982 | CA1120612A1 Thin film transistors |
03/23/1982 | CA1120610A1 Method for forming diffusions having narrow dimensions |
03/23/1982 | CA1120609A1 Method for forming a narrow dimensioned mask opening on a silicon body |
03/23/1982 | CA1120608A1 Method for forming an insulator between layers of conductive material |
03/23/1982 | CA1120605A1 Metal-insulator-semiconductor device manufacture |
03/23/1982 | CA1120588A1 Ccd input circuits |
03/23/1982 | CA1120556A1 Transversal filter |
03/17/1982 | EP0047690A1 Monolithic ampliflier comprising a power dividing and combining system containing a plurality of transistors |
03/17/1982 | EP0047392A2 High-voltage semiconductor switch |
03/16/1982 | US4320411 Integrated circuit with double dielectric isolation walls |
03/16/1982 | US4320410 GaAs Semiconductor device |
03/16/1982 | US4320178 Sulfides |
03/16/1982 | US4319932 Method of making high performance bipolar transistor with polysilicon base contacts |
03/16/1982 | US4319397 Method of producing semiconductor displacement transducer |
03/16/1982 | US4319396 Method for fabricating IGFET integrated circuits |
03/16/1982 | US4319395 Method of making self-aligned device |
03/10/1982 | EP0047153A1 Semiconductor memory device |
03/10/1982 | EP0047133A1 High density semiconductor memory device and process for producing the same |
03/10/1982 | EP0046914A2 Method of forming alloyed metal contact layers on crystallographically oriented semiconductor surfaces using pulsed energy radiation |
03/10/1982 | EP0046886A2 Method of making dynamic integrated RAM one-transistor memory cells |
03/10/1982 | EP0046868A2 Capacitor structure with dual dielectrics |
03/10/1982 | EP0046857A2 Method of making a borderless diffusion contact structure |
03/09/1982 | US4319342 One device field effect transistor (FET) AC stable random access memory (RAM) array |
03/09/1982 | US4319263 Double level polysilicon series transistor devices |
03/09/1982 | US4319262 Integrated-circuit structure including lateral PNP transistor with polysilicon layer bridging gap in collector field relief electrode |
03/09/1982 | US4319261 Self-aligned, field aiding double polysilicon CCD electrode structure |
03/09/1982 | US4319260 Multilevel interconnect system for high density silicon gate field effect transistors |
03/09/1982 | US4319257 Low thermal coefficient semiconductor device |
03/09/1982 | US4319069 Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation |
03/09/1982 | US4318752 Heterojunction semiconductor laser fabrication utilizing laser radiation |
03/09/1982 | US4318751 Self-aligned process for providing an improved high performance bipolar transistor |
03/09/1982 | US4318216 Extended drain self-aligned silicon gate MOSFET |
03/09/1982 | CA1119733A1 Narrow channel mos devices and method of manufacturing |
03/09/1982 | CA1119722A1 Semiconductor ccd transversal filter with controllable threshold level |
03/03/1982 | EP0046578A2 Power thyristor |
03/03/1982 | EP0046552A2 Integrated monolithic circuit with circuit parts that can be switched on and/or off |
03/03/1982 | EP0046549A1 Output stage of a monolithic integrated charge-transfer device |
03/02/1982 | US4318118 Semiconductor structure and method |
03/02/1982 | US4318117 MOS Integrated circuit |
03/02/1982 | US4317844 Semiconductor device having a body of amorphous silicon and method of making the same |
03/02/1982 | US4317690 Self-aligned double polysilicon MOS fabrication |