| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/08/1980 | US4196507 Method of fabricating MNOS transistors having implanted channels |
| 04/08/1980 | CA1075373A1 Semiconductor device having a hetero junction |
| 04/08/1980 | CA1075372A1 Semiconductor device with underpass interconnection zone |
| 04/08/1980 | CA1075371A1 Semiconductor diffusion process |
| 04/08/1980 | CA1075369A1 Integrated circuit having complementary bipolar transistors |
| 04/02/1980 | EP0009442A1 High voltage bipolar transistors, integrated circuits comprising such transistors and method of making such circuits |
| 04/02/1980 | EP0009438A1 Dynamic charge-transfer memory element and its application, especially in a shift register |
| 04/02/1980 | EP0009416A2 Temperature sensitive relaxation oscillator |
| 04/02/1980 | EP0009401A1 Photovoltaic cells employing a zinc phosphide absorber-generator |
| 04/02/1980 | EP0009367A1 Gate turn-off thyristor |
| 04/02/1980 | EP0009100A1 Charge propagation device and method for its operation |
| 04/02/1980 | EP0009098A1 Process for producing a Schottky diode and Schottky diode so produced |
| 04/02/1980 | EP0009097A1 Process for manufacturing an insulating structure in a semiconductor body |
| 04/01/1980 | US4196443 Buried contact configuration for CMOS/SOS integrated circuits |
| 04/01/1980 | US4196441 Semiconductor storage cell |
| 04/01/1980 | US4196440 Lateral PNP or NPN with a high gain |
| 04/01/1980 | US4196439 Semiconductor device drain contact configuration |
| 04/01/1980 | US4196438 Article and device having an amorphous silicon containing a halogen and method of fabrication |
| 04/01/1980 | US4196389 Test site for a charged coupled device (CCD) array |
| 04/01/1980 | US4196228 Fabrication of high resistivity semiconductor resistors by ion implanatation |
| 04/01/1980 | CA1074630A1 Method of forming an oxide layer on a silicon substrate |
| 03/25/1980 | US4195354 Semiconductor matrix for integrated read-only storage |
| 03/25/1980 | US4195308 Ohmic contact for P type indium phosphide |
| 03/25/1980 | US4195307 Fabricating integrated circuits incorporating high-performance bipolar transistors |
| 03/25/1980 | US4195306 Gate turn-off thyristor |
| 03/25/1980 | US4195273 CTD charge subtraction transversal filter |
| 03/25/1980 | US4194935 Method of making high mobility multilayered heterojunction devices employing modulated doping |
| 03/25/1980 | US4194285 Method of making a field effect transistor |
| 03/25/1980 | US4194283 Process for the production of a single transistor memory cell |
| 03/25/1980 | CA1074457A1 Method for manufacturing a semiconductor integrated circuit device |
| 03/20/1980 | WO1980000522A1 Method for producing a semi-conductor element |
| 03/20/1980 | WO1980000521A1 Self-terminating thermal oxidation of al-containing group iii-v compound layers |
| 03/19/1980 | EP0008928A1 A method of making a semiconductor device |
| 03/19/1980 | EP0008903A1 Semiconductor integrated circuit device |
| 03/19/1980 | EP0008898A1 Method of forming an oxide layer on a group III-V compound |
| 03/19/1980 | EP0008774A1 A method of manufacturing a device in a silicon wafer |
| 03/19/1980 | EP0008691A1 Storage cell for a charge transfer bucket-brigade circuit |
| 03/19/1980 | EP0008661A1 Process for the preliminary heating of semiconductor bodies in view of subsequently increasing their internal gettering effect |
| 03/18/1980 | US4194214 Integration of high voltage driver and low voltage logic in a semiconductor device |
| 03/18/1980 | US4194213 Semiconductor image sensor having CCD shift register |
| 03/18/1980 | US4194133 Charge coupled circuit arrangements and devices having controlled punch-through charge introduction |
| 03/18/1980 | US4194021 Reacting silane, oxygen, nitrogen |
| 03/18/1980 | US4193835 Doped with a metallocene impurity |
| 03/18/1980 | US4193182 Passivated V-gate GaAs field-effect transistor and fabrication process therefor |
| 03/18/1980 | CA1074023A1 Millimeter wave semiconductor device |
| 03/18/1980 | CA1074009A1 Charge coupled device memory |
| 03/11/1980 | US4193125 Read only memory |
| 03/11/1980 | US4193080 Non-volatile memory device |
| 03/11/1980 | US4193079 MESFET with non-uniform doping |
| 03/11/1980 | US4192059 Process for and structure of high density VLSI circuits, having inherently self-aligned gates and contacts for FET devices and conducting lines |
| 03/11/1980 | CA1073551A1 Monolithic semiconductor apparatus adapted for sequential charge transfer |
| 03/05/1980 | EP0008535A2 A gate controlled semiconductor device |
| 03/05/1980 | EP0008399A1 Monolithic integrated semiconductor circuit with at least a lateral transistor |
| 03/05/1980 | EP0008374A1 CCD input circuit based on the "fill and spill" method |
| 03/05/1980 | EP0008354A1 Charge transfer memory with a series-parallel-series organisation and a strict periodical clock control |
| 03/04/1980 | US4191963 Built-in notched channel MOS-FET triodes for high frequency application |
| 03/04/1980 | US4191899 Voltage variable integrated circuit capacitor and bootstrap driver circuit |
| 03/04/1980 | US4191896 Low noise CCD input circuit |
| 03/04/1980 | US4191895 Low noise CCD input circuit |
| 03/04/1980 | US4191603 Making semiconductor structure with improved phosphosilicate glass isolation |
| 03/04/1980 | US4191602 Liquid phase epitaxial method of making a high power, vertical channel field effect transistor |
| 03/04/1980 | US4191452 AC silicon PN junction photodiode light-valve substrate |
| 03/04/1980 | US4191057 Flexible beam with transistor deposited on surface, wheatstone bridge, biasing |
| 03/04/1980 | US4190949 Forming insulating film, boring an opening, forming layer on exposed surface |
| 03/04/1980 | CA1073118A1 Field effect transistor and method of construction thereof |
| 02/26/1980 | US4190854 Trim structure for integrated capacitors |
| 02/26/1980 | US4190853 Multilayer semiconductor switching devices |
| 02/26/1980 | US4190850 MIS field effect transistor having a short channel length |
| 02/26/1980 | US4190849 Electronic-beam programmable semiconductor device structure |
| 02/26/1980 | US4190466 Method for making a bipolar transistor structure utilizing self-passivating diffusion sources |
| 02/26/1980 | US4190458 Metal-silica solution for forming films on semiconductor surfaces |
| 02/26/1980 | US4189826 Silicon charge-handling device employing SiC electrodes |
| 02/26/1980 | CA1072674A1 Two phase charge transfer device with channel stopper regions |
| 02/21/1980 | WO1980000283A1 Thyristor with amplifier gate |
| 02/20/1980 | EP0008219A1 Charge transfer apparatus |
| 02/20/1980 | EP0008106A1 Semiconductor device with a plurality of semiconductor elements comprising pn junctions combined in a semiconductor crystal and forming an integrated circuit |
| 02/20/1980 | EP0008043A1 Integrated bipolar semiconductor circuit |
| 02/20/1980 | EP0008008A1 Thyristor |
| 02/20/1980 | EP0007923A1 Process for manufacturing a twice diffused lateral transistor and a complemtary vertical transistor integrated therewith |
| 02/19/1980 | US4189738 Semiconductor integrated circuit device |
| 02/19/1980 | US4189737 Field effect transistor having an extremely short channel length |
| 02/19/1980 | US4189524 To reduce short circuiting |
| 02/19/1980 | US4188710 Solid-state diffusion; cleaning, etching, desorption, vacuum deposition, annealing |
| 02/19/1980 | US4188707 Semiconductor devices and method of manufacturing the same |
| 02/19/1980 | CA1071941A1 Chemical vapor deposition of films and resulting products |
| 02/12/1980 | US4188597 Process for the operation of a transversal filter |
| 02/12/1980 | US4188258 Gold diffused into platinum alloy gage material, etched to define resistors |
| 02/12/1980 | CA1071772A1 Method of manufacturing a semi-conductor device employing semi-conductor to semi-insulator conversion by ion implantation |
| 02/06/1980 | EP0007910A1 A stratified charge memory device |
| 02/05/1980 | US4187517 Semiconductor component |
| 02/05/1980 | US4187515 Semiconductor controlled rectifier |
| 02/05/1980 | US4187514 Junction type field effect transistor |
| 02/05/1980 | US4187513 Solid state current limiter |
| 02/05/1980 | CA1071333A1 Tapered mask method of semiconductor manufacture |
| 01/29/1980 | US4186410 Epitaxial growth, metal deposition, transistor |
| 01/29/1980 | US4186408 Field effect transistor, silicon substrate, silicon dioxide insulator layer |
| 01/29/1980 | US4186407 Heterojunction avalanche diode with a ternary alloy of gallium, indium and arsenic, and a binary alloy of indium and phosphorus |
| 01/29/1980 | CA1070854A1 Integrated semiconductor circuit arrangement |
| 01/29/1980 | CA1070836A1 Insulated gate field-effect transistor read-only memory cell |
| 01/29/1980 | CA1070806A1 Solid state image sensing device |