| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/27/1979 | US4146906 Low forward voltage drop semiconductor device having polycrystalline layers of different resistivity |
| 03/27/1979 | US4146902 Irreversible semiconductor switching element and semiconductor memory device utilizing the same |
| 03/27/1979 | US4146413 Method of producing a P-N junction utilizing polycrystalline silicon |
| 03/27/1979 | US4145803 Lithographic offset alignment techniques for RAM fabrication |
| 03/21/1979 | EP0001160A2 Planar PNPN semiconductor device of circular geometry and magnetic field sensor using such a device |
| 03/21/1979 | EP0001146A1 Charge coupled device |
| 03/20/1979 | US4145703 Doped polysilicon gate electrode, v-shaped |
| 03/20/1979 | US4145700 Power field effect transistors |
| 03/20/1979 | US4145676 Input stage for a CTD low-pass filter |
| 03/20/1979 | US4145459 Depositing metal films on semiconductor with groove, masking |
| 03/20/1979 | US4145233 Method for making narrow channel FET by masking and ion-implantation |
| 03/20/1979 | US4144636 Method for manufacture of a moisture sensor |
| 03/20/1979 | CA1051124A1 Schottky barrier type semiconductor device |
| 03/20/1979 | CA1050866A1 Definition control of polycrystalline silicon |
| 03/13/1979 | US4144588 CCD Storage module |
| 03/13/1979 | US4144526 Circuit arrangement and operating process for converting an analogue signal into a digital signal |
| 03/13/1979 | US4144493 Integrated circuit test structure |
| 03/13/1979 | US4144106 Manufacture of an I2 device utilizing staged selective diffusion thru a polycrystalline mask |
| 03/13/1979 | US4144101 Process for providing self-aligned doping regions by ion-implantation and lift-off |
| 03/13/1979 | CA1050667A1 Method of manufacturing semiconductor devices |
| 03/13/1979 | CA1050666A1 Method for making transistor structures |
| 03/13/1979 | CA1050640A1 Solid state image sensor |
| 03/07/1979 | EP0000975A1 A composite JFET-bipolar structure |
| 03/07/1979 | EP0000909A1 Lateral transistor |
| 03/07/1979 | EP0000883A1 Insulated gate field effect transistor |
| 03/06/1979 | US4143421 Tetrode transistor memory logic cell |
| 03/06/1979 | US4143393 High field capacitor structure employing a carrier trapping region |
| 03/06/1979 | US4143392 Composite jfet-bipolar structure |
| 03/06/1979 | US4143388 Mos type semiconductor device |
| 03/06/1979 | US4143387 Signal mixer including resistive and normal gate field-effect transistor |
| 03/06/1979 | US4143386 Junction type field effect transistor |
| 03/06/1979 | US4143384 Low parasitic capacitance diode |
| 03/06/1979 | US4143383 Controllable impedance attenuator having all connection contacts on one side |
| 03/06/1979 | US4143178 Polycrystalline, dopes |
| 03/06/1979 | US4142926 Masking, selective etching |
| 03/06/1979 | CA1050171A1 Semiconductor heat sensitive switching device |
| 02/27/1979 | US4142201 Light-controlled thyristor with anode-base surface firing |
| 02/27/1979 | US4142199 Bucket brigade device and process |
| 02/27/1979 | US4142197 Drain extensions for closed COS/MOS logic devices |
| 02/27/1979 | US4142195 Glow discharge in silane, annealing |
| 02/27/1979 | US4142115 Semiconductor device with a thermal protective device |
| 02/27/1979 | US4142112 Single active element controlled-inversion semiconductor storage cell devices and storage matrices employing same |
| 02/27/1979 | US4142109 Process for operating a charge-coupled arrangement in accordance with the charge-coupled device principle |
| 02/27/1979 | US4141738 Melt-formed polycrystalline ceramics and dopant hosts containing phosphorus |
| 02/27/1979 | US4141253 Force transducing cantilever beam and pressure transducer incorporating it |
| 02/27/1979 | CA1049661A1 Semiconductor rectifier |
| 02/21/1979 | EP0000833A1 Derivatives of phosphonoacyl prolines and their pharmaceutical use |
| 02/21/1979 | EP0000830A1 Photovoltaic elements |
| 02/21/1979 | EP0000829A1 Photovoltaic elements |
| 02/21/1979 | EP0000743A1 Method for fabricating tantalum contacts on a N-type conducting silicon semiconductor substrate |
| 02/20/1979 | US4141027 IGFET integrated circuit memory cell |
| 02/20/1979 | US4141025 Semiconductor structure sensitive to pressure |
| 02/20/1979 | US4141024 Solid state image sensing device |
| 02/20/1979 | US4141023 Field effect transistor having a linear attenuation characteristic and an improved distortion factor with multiple gate drain contacts |
| 02/20/1979 | US4141022 Refractory metal contacts for IGFETS |
| 02/20/1979 | US4141021 Field effect transistor having source and gate electrodes on opposite faces of active layer |
| 02/20/1979 | US4141020 Thermal stability |
| 02/20/1979 | US4140923 Charge transfer output circuits |
| 02/20/1979 | US4140560 Process for manufacture of fast recovery diodes |
| 02/20/1979 | US4140548 Thermal oxidation and vapor deposition of silicon dioxide layers |
| 02/20/1979 | US4140547 Method for manufacturing MOSFET devices by ion-implantation |
| 02/20/1979 | US4139935 Over voltage protective device and circuits for insulated gate transistors |
| 02/20/1979 | CA1049157A1 Fet device with reduced overlap capacitance and method of manufacture |
| 02/20/1979 | CA1049155A1 Integrated circuit test structure |
| 02/20/1979 | CA1049154A1 Field effect transistor having improved threshold stability |
| 02/20/1979 | CA1049142A1 Charge transfer logic gate |
| 02/20/1979 | CA1049127A1 Semiconductor devices with improved heat radiation and current concentration |
| 02/13/1979 | US4139857 Schottky barrier type solid-state element |
| 02/13/1979 | US4139787 Line-addressable random-access memory decoupling apparatus |
| 02/13/1979 | US4139786 Static MOS memory cell using inverted N-channel field-effect transistor |
| 02/13/1979 | US4139785 Static memory cell with inverted field effect transistor |
| 02/13/1979 | US4139784 CCD Input circuits |
| 02/13/1979 | US4139782 Regenerator stage for CCD arrangements |
| 02/13/1979 | US4139402 Method of manufacturing a semiconductor device utilizing doped oxides and controlled oxidation |
| 02/13/1979 | US4138781 Method for manufacturing semiconductor device |
| 02/13/1979 | CA1048659A1 Semiconductor resistor having high value resistance |
| 02/13/1979 | CA1048656A1 Fabricating high performance integrated bipolar and complementary field effect transistors |
| 02/13/1979 | CA1048655A1 Semiconductor integrated circuit device |
| 02/13/1979 | CA1048654A1 High speed, high yield cmos/sos process |
| 02/13/1979 | CA1048653A1 Method and structure for controlling carrier lifetime in semiconductor devices |
| 02/13/1979 | CA1048647A1 Read mostly memory cell having bipolar and famos transistor |
| 02/13/1979 | CA1048331A1 Method for fabricating minute openings in integrated circuits |
| 02/07/1979 | EP0000655A1 Semiconductor charge coupled device with split electrode configuration |
| 02/07/1979 | EP0000638A1 Devices including epitaxial layers of dissimilar crystalline materials |
| 02/07/1979 | EP0000545A1 Method for forming a semiconducter device with self-alignment |
| 02/07/1979 | EP0000480A1 Method of passivating semiconductor elements by applying a silicon layer |
| 02/07/1979 | EP0000472A1 High-density integrated semiconductor device comprising a diode-resistor structure |
| 02/06/1979 | US4138690 Darlington circuit semiconductor device |
| 02/06/1979 | US4138280 Breakdown voltage, resistivity, diffusion |
| 02/06/1979 | CA1048180A1 Device for driving or energizing a display device |
| 02/06/1979 | CA1048161A1 Aluminium diffusion method for semiconductors |
| 02/06/1979 | CA1048154A1 Charge coupled device with reservoir for charge carriers below input electrode |
| 02/06/1979 | CA1048125A1 Sensing circuit with a four terminal insulated gate semi-conductor device |
| 01/30/1979 | US4137545 Gate turn-off thyristor with anode rectifying contact to non-regenerative section |
| 01/30/1979 | US4137542 Semiconductor structure |
| 01/30/1979 | US4137109 Selective diffusion and etching method for isolation of integrated logic circuit |
| 01/30/1979 | US4137103 Silicon integrated circuit region containing implanted arsenic and germanium |
| 01/30/1979 | US4137099 Method of controlling leakage currents and reverse recovery time of rectifiers by hot electron irradiation and post-annealing treatments |
| 01/30/1979 | US4136435 Method for making solid-state device |
| 01/30/1979 | CA1047652A1 Monolithic integrated circuit transistor having very low collector resistance |