| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/22/1986 | US4584593 Insulated-gate field-effect transistor (IGFET) with charge carrier injection |
| 04/22/1986 | US4584592 Marking head for fluid jet assisted ion projection imaging systems |
| 04/22/1986 | US4584055 Method for manufacturing a semiconductor device |
| 04/22/1986 | CA1203643A1 Semiconductor device interconnection pattern with rim |
| 04/22/1986 | CA1203642A1 Method for the manufacture of integrated mos-filed effect transistor circuits in silicon gate technology having diffusion zones coated with silicide as low-impedance printed conductors |
| 04/22/1986 | CA1203641A1 Semiconductor circuit containing integrated bipolar and mos transistors on a chip and method of producing same |
| 04/22/1986 | CA1203639A1 Semiconductor device and method of manufacturing the same |
| 04/22/1986 | CA1203638A1 Method of batch manufacture of microwave diodes with incorporated encapsulation and diodes obtained by said method |
| 04/22/1986 | CA1203623A1 Charge-coupled device |
| 04/16/1986 | EP0178133A2 Semiconductor integrated circuit device |
| 04/16/1986 | EP0178030A1 Charge-coupled device |
| 04/16/1986 | EP0178004A1 A bipolar hetero-junction transistor and method of producing the same |
| 04/16/1986 | EP0177986A2 Process for the fabrication of a nonvolatile memory cell with very small thin oxide area and cell obtained by said process |
| 04/16/1986 | EP0177903A2 Semiconductor device having a gallium arsenide crystal layer grown on a silicon substrate and method for producing it |
| 04/16/1986 | EP0177864A2 Multijunction semiconductor device |
| 04/16/1986 | EP0177816A2 Non-volatile dynamic random access memory cell |
| 04/16/1986 | EP0177692A2 Protection device in an integrated circuit |
| 04/16/1986 | EP0177665A1 Self turnoff type semiconductor switching device |
| 04/16/1986 | EP0177544A1 Method of producing an isfet and same isfet. |
| 04/16/1986 | EP0177494A1 PROCESS FOR FABRICATING GaAs FET WITH ION IMPLANTED CHANNEL LAYER |
| 04/15/1986 | US4583158 High voltage thyristor valve |
| 04/15/1986 | US4583110 Amphoteric silicon or germanium dopes |
| 04/15/1986 | US4583109 Ionization inhibitors |
| 04/15/1986 | US4583107 Castellated gate field effect transistor |
| 04/15/1986 | US4583106 Fabrication methods for high performance lateral bipolar transistors |
| 04/15/1986 | US4583105 Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage |
| 04/15/1986 | US4582565 Method of manufacturing integrated semiconductor circuit devices |
| 04/15/1986 | US4581815 Integrated circuit structure having intermediate metal silicide layer and method of making same |
| 04/15/1986 | EP0122918A4 Acoustic charge transport device and method. |
| 04/15/1986 | CA1203326A1 Self-aligned antiblooming structure for charge- coupled devices and method of fabrication thereof |
| 04/15/1986 | CA1203323A1 Method of providing a narrow groove or slot in a substrate region, in particular a semiconductor substrate region |
| 04/15/1986 | CA1203322A1 Fabrication of fets |
| 04/15/1986 | CA1203321A1 Voltage-stable sub-1m-mos transistor for vlsi circuits |
| 04/10/1986 | WO1986002206A1 Electrical connector |
| 04/10/1986 | WO1986002203A1 Low-leakage jfet |
| 04/10/1986 | WO1986002202A1 Charge storage depletion region discharge protection |
| 04/10/1986 | CN85108619A Liguid crystal display apparatus |
| 04/10/1986 | CN85107988A Multijunction semiconductor device |
| 04/09/1986 | EP0177422A1 Method of producing gate electrodes of silicide or silicium for an integrated circuit with insulated gate field effect transistors |
| 04/09/1986 | EP0177374A2 High-speed semiconductor device |
| 04/09/1986 | EP0177246A1 Heterojunction bipolar transistor and method of manufacturing the same |
| 04/09/1986 | EP0177129A1 Method of manufacturing GaAs field effect transistor |
| 04/09/1986 | EP0177066A2 Semiconductor memory device with information storage vertical trench capacitor and method of manufacturing the same |
| 04/09/1986 | EP0177022A2 GaAs Single Crystal, method of producing the same, and semiconductor device utilizing the same |
| 04/09/1986 | EP0176778A2 Method of producing a pu junction with a high disruptive breakdown voltage |
| 04/09/1986 | EP0176771A2 Bipolar power transistor with a variable breakdown voltage |
| 04/09/1986 | EP0176754A1 Schottky-gate field effect transistor |
| 04/09/1986 | EP0176753A1 Darlington circuit comprising a field effect transistor and a bipolar output transistor |
| 04/09/1986 | EP0176714A2 Memory cell storing logic data in volatile and non-volatile forms |
| 04/08/1986 | US4581672 Internal high voltage (Vpp) regulator for integrated circuits |
| 04/08/1986 | US4581652 Charge transfer device |
| 04/08/1986 | US4581627 Enhanced silicide adhesion to semiconductor and insulator surfaces |
| 04/08/1986 | US4581626 Thyristor cathode and transistor emitter structures with insulator islands |
| 04/08/1986 | US4581622 Semiconductors |
| 04/08/1986 | US4581621 Electronic device |
| 04/08/1986 | US4581620 Semiconductor device of non-single crystal structure |
| 04/08/1986 | US4581543 Semiconductor switch having a disconnectible thyristor |
| 04/08/1986 | US4581539 Solid-state image sensor |
| 04/08/1986 | US4581319 Method for the manufacture of bipolar transistor structures with self-adjusting emitter and base regions for extreme high frequency circuits |
| 04/08/1986 | US4581076 Selectively implanting GaAs semiconductor substrates through a metallic layer |
| 04/08/1986 | US4580331 PNP-type lateral transistor with minimal substrate operation interference and method for producing same |
| 04/08/1986 | US4580330 Integrated circuit isolation |
| 04/02/1986 | EP0176409A2 Cmos circuit having a reduced tendency to latch |
| 04/02/1986 | EP0176264A2 Vertically integrated CMOS logic gate |
| 04/02/1986 | EP0176254A2 Semiconductor memory device |
| 04/02/1986 | EP0176146A2 High voltage semiconductor devices |
| 04/02/1986 | EP0176111A1 High speed, nonvolatile, electrically erasable memory system |
| 04/02/1986 | EP0176087A2 Semiconductor superlattice structure |
| 04/02/1986 | EP0176078A2 Programmable semiconductor structures and method for using the same |
| 04/02/1986 | EP0175984A1 Semiconductor device comprising MOS transistors |
| 04/02/1986 | EP0175894A2 Non-volatile semiconductor storage cell |
| 04/02/1986 | EP0175864A2 Self-aligned metal-semiconductor field effect transistor |
| 04/01/1986 | USH40 Field shields for Schottky barrier devices |
| 04/01/1986 | US4580247 Semiconductor floating gate memory cell |
| 04/01/1986 | US4580156 Structured resistive field shields for low-leakage high voltage devices |
| 04/01/1986 | US4580155 For soft X-ray |
| 04/01/1986 | US4580154 Insulated-gate field-effect transistors |
| 04/01/1986 | US4579760 Wafer shape and method of making same |
| 04/01/1986 | US4579601 Forming thin single crystal semiconductor layer, doping, and annealing |
| 04/01/1986 | CA1202725A1 Semiconductor integrated circuit with battery |
| 03/27/1986 | WO1986001939A1 A novel semiconductor device |
| 03/26/1986 | EP0175489A2 An eprom device and method of manufacturing same |
| 03/26/1986 | EP0175488A2 EPROM device |
| 03/26/1986 | EP0175437A1 Production of GaAs enhancement and depletion mode HEMT's |
| 03/26/1986 | EP0175433A2 MOS dynamic RAM and manufacturing method thereof |
| 03/26/1986 | EP0175215A1 Thin film field-effect semiconductor device |
| 03/25/1986 | US4578696 Thin film semiconductor device |
| 03/25/1986 | US4578695 Monolithic autobiased resistor structure and application thereof to interface circuits |
| 03/25/1986 | US4578596 Circuit arrangement for driving a thyristor with a phototransistor |
| 03/25/1986 | US4578595 Circuit arrangement for drive of a thyristor with light |
| 03/25/1986 | US4578343 Forming a recess and gate electrode using resist layer as a mask |
| 03/25/1986 | US4578127 Method of making an improved group III-V semiconductor device utilizing a getter-smoothing layer |
| 03/25/1986 | US4578126 Liquid phase epitaxial growth process |
| 03/25/1986 | US4577397 Method for manufacturing a semiconductor device having vertical and lateral transistors |
| 03/25/1986 | US4577396 Method of forming electrical contact to a semiconductor substrate via a metallic silicide or silicon alloy layer formed in the substrate |
| 03/25/1986 | US4577395 Method of manufacturing semiconductor memory device having trench memory capacitor |
| 03/25/1986 | US4577392 Fabrication technique for integrated circuits |
| 03/25/1986 | US4577391 Method of manufacturing CMOS devices |
| 03/25/1986 | CA1202430A1 Semiconductor device |
| 03/25/1986 | CA1202427A1 Split gate fet |