| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/30/1986 | CN86100841A Semiconductor integrated circuit device and method of producting same |
| 07/30/1986 | CN85108634A Bipolar hetero-junction transistor and method of producing the same |
| 07/29/1986 | US4603426 Floating-diffusion charge sensing for buried-channel CCD using a doubled clocking voltage |
| 07/29/1986 | US4603402 Semiconductor device |
| 07/29/1986 | US4603341 Stacked double dense read only memory |
| 07/29/1986 | US4603340 Semiconductor device having superlattice structure |
| 07/29/1986 | US4603059 Method of manufacturing MIS capacitors for semiconductor IC devices |
| 07/29/1986 | US4602965 Method of making FETs in GaAs by dual species implantation of silicon and boron |
| 07/29/1986 | US4602419 Method of making junction field effect transistor |
| 07/29/1986 | CA1208808A1 Semiconductor device |
| 07/29/1986 | CA1208807A1 Semiconductor device |
| 07/29/1986 | CA1208805A1 Vertically isolated complementary transistors |
| 07/29/1986 | CA1208780A1 Electronic matrix arrays and method for making the same |
| 07/24/1986 | EP0105324A4 OHMIC CONTACT FOR N-TYPE GaAs. |
| 07/23/1986 | EP0188378A2 Semiconductor circuit device |
| 07/23/1986 | EP0188291A2 Bipolar semiconductor device and method of manufacturing the same |
| 07/23/1986 | EP0188080A1 Light-emitting semiconductor device having a super lattice |
| 07/23/1986 | EP0160003A4 Mos floating gate memory cell and process for fabricating same. |
| 07/23/1986 | EP0120918A4 An aluminum-metal silicide interconnect structure for integrated circuits and method of manufacture thereof. |
| 07/23/1986 | CN85107802A Integrated circuit fabrication process with buried contacts |
| 07/23/1986 | CN85104497A Low voltage eeprom cell |
| 07/22/1986 | US4602268 High voltage dielectrically isolated dual gate solid-state switch |
| 07/22/1986 | US4602266 Semiconductor device |
| 07/22/1986 | US4602192 Thin film integrated device |
| 07/22/1986 | US4602170 Resistive gate field effect transistor logic family |
| 07/22/1986 | US4601760 Ion-implanted process for forming IC wafer with buried-reference diode and IC structure made with such process |
| 07/22/1986 | US4601098 Method of manufacturing plural active regions followed by a chain step formation |
| 07/22/1986 | US4601097 Semiconductors |
| 07/22/1986 | US4601096 Method for fabricating buried channel field effect transistor for microwave and millimeter frequencies utilizing molecular beam epitaxy |
| 07/22/1986 | US4601095 Process for fabricating a Schottky-barrier gate field effect transistor |
| 07/22/1986 | CA1208372A1 Method of forming ohmic contacts |
| 07/17/1986 | WO1986004185A1 A microwave transferred electron device |
| 07/17/1986 | WO1986004184A1 Hot electron unipolar transistor |
| 07/17/1986 | WO1986003333A3 High-performance trench capacitors for dram cells |
| 07/16/1986 | EP0187367A2 Thin film transistor |
| 07/16/1986 | EP0187307A1 Improved wafer shape and method of making same |
| 07/16/1986 | EP0187278A2 Semiconductor device and method for manufacturing the same |
| 07/16/1986 | EP0187260A2 Process for fabricating a semiconductor integrated circuit device having MISFETs |
| 07/16/1986 | EP0187237A2 dRAM cell and method |
| 07/16/1986 | EP0067206B1 Method for fabricating complementary semiconductor devices |
| 07/16/1986 | CN85108047A Fluorinated p-doped microcrystalline semiconductor alloys and method of preparation |
| 07/15/1986 | USRE32207 Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide |
| 07/15/1986 | US4600935 Silicon, multilayer, conductivity |
| 07/15/1986 | US4600932 Enhanced mobility buried channel transistor structure |
| 07/15/1986 | US4600912 Diaphragm pressure sensor with improved tensile loading characteristics |
| 07/15/1986 | US4600801 Fluorinated, p-doped microcrystalline silicon semiconductor alloy material |
| 07/15/1986 | US4600658 Bonding pads, semiconductors, dielectriecs silicon, adhesion, multilayer, barriers, intermetallics |
| 07/15/1986 | US4600469 Cadmium mercury telluride |
| 07/15/1986 | CA1207878A1 Method for sputtering a pin microcrystalline/ amorphous silicon semiconductor device |
| 07/09/1986 | EP0187016A2 MISFET with lightly doped drain and method of manufacturing the same |
| 07/09/1986 | CN85109742A Method of producing semiconductor integrated circuit devices |
| 07/08/1986 | US4599706 Nonvolatile electrically alterable memory |
| 07/08/1986 | US4599705 Programmable cell for use in programmable electronic arrays |
| 07/08/1986 | US4599638 Planar semiconductor structure breakdown voltage protection using voltage divider |
| 07/08/1986 | US4599633 Integrated self-firing amplified thyristor structure for on/off switching of high currents and control circuit thereof |
| 07/08/1986 | US4599631 Semiconductor apparatus having a zener diode integral with a resistor-transistor combination |
| 07/08/1986 | US4599576 Insulated gate type field effect semiconductor device and a circuit employing the device |
| 07/08/1986 | US4599246 Three masking steps in stead of seven |
| 07/08/1986 | US4599118 Metal oxide semiconductor field effect tranistor |
| 07/08/1986 | US4598461 Netal oxide semiconductor field effect transistor |
| 07/08/1986 | CA1207469A1 Method of producing mos transistors |
| 07/08/1986 | CA1207468A1 Intergrated semiconductor circuits with contact interconnect levels comprised of an aluminum/silicon alloy |
| 07/08/1986 | CA1207465A1 Schottky power diode |
| 07/02/1986 | EP0186578A2 Bipolar microwave integratable transistor and method therefor |
| 07/02/1986 | EP0186567A1 Diac with coplanar electrodes |
| 07/02/1986 | EP0186518A2 A breakdown protected transistor device |
| 07/02/1986 | EP0186460A2 Semiconductor photodetector |
| 07/02/1986 | EP0186443A2 Silicon nitride films for integrated circuits |
| 07/02/1986 | EP0186350A2 Multilayer ohmic contact for P-type semiconductor and method of making same |
| 07/02/1986 | EP0186346A2 Vertically layered momom tunnel device |
| 07/02/1986 | EP0186345A2 Horizontally layered momom notch tunnel device |
| 07/02/1986 | EP0186336A1 Semiconductor device comprising a superlattice structure |
| 07/02/1986 | EP0186305A1 Heterojunction bipolar transistor having an emitter region with a band gap greater than that of a base region |
| 07/02/1986 | EP0186301A1 High-speed semiconductor device |
| 07/02/1986 | EP0186140A1 Semiconductor power switch |
| 07/02/1986 | EP0186058A1 Field effect transistor with a high voltage breakdown capacity, and method for its production |
| 07/02/1986 | EP0186036A2 Liquid crystal display device |
| 07/02/1986 | EP0185995A2 Programmable semiconductor switch for a light influencing display and method of making same |
| 07/02/1986 | EP0185990A1 Charge coupled device |
| 07/02/1986 | EP0185941A2 Polymer-based microelectronic pH-sensor |
| 07/02/1986 | EP0185837A1 Efet, bidirectional lateral power fet |
| 07/02/1986 | CA1207087A Temperature stable self-protected thyristor and method of producing |
| 07/02/1986 | CA1207086A Self protected thyristor and method of making |
| 07/01/1986 | US4598414 Input compression apparatus for charge coupled devices |
| 07/01/1986 | US4598304 Thin film devices of silicon |
| 07/01/1986 | US4597827 Method of making MIS field effect transistor having a lightly-doped region |
| 07/01/1986 | US4597824 Vapor deposition of doped gate oxide film on substrate |
| 07/01/1986 | US4597805 Making guard ring for reducing pattern sensitivity in MOS/LSI dynamic RAM |
| 07/01/1986 | US4597804 Methods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor therein |
| 07/01/1986 | US4597167 Method of forming a metal film on a selectively diffused layer |
| 07/01/1986 | US4597166 Semiconductor substrate and method for manufacturing semiconductor device using the same |
| 07/01/1986 | US4597163 Method of improving film adhesion between metallic silicide and polysilicon in thin film integrated circuit structures |
| 07/01/1986 | US4597160 Method of fabricating a polysilicon transistor with a high carrier mobility |
| 07/01/1986 | US4597159 Method of manufacturing SiO2 -Si interface for floating gate semiconductor device |
| 06/25/1986 | EP0185544A1 IC memory devices |
| 06/25/1986 | EP0185426A1 Integrated circuits comprising a protection device against electrostatic discharges |
| 06/25/1986 | EP0185415A2 Conductivity-enhanced combined lateral MOS/bipolar transistor |
| 06/25/1986 | EP0185343A1 Charge transfer device |
| 06/25/1986 | EP0185104A1 Low temperature tunneling transistor |
| 06/24/1986 | US4597092 Conserving stored charge in apparatus having a charge coupled device |