| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 12/05/1985 | WO1985005497A1 Monolithic integrated planar semi-conductor device |
| 12/04/1985 | EP0163547A2 Image sensor |
| 12/04/1985 | EP0163477A2 Method for triggering light triggered thyristors |
| 12/04/1985 | EP0163203A2 Multiple high electron mobility transistor structures without inverted heterojunctions |
| 12/04/1985 | EP0163163A2 Method of manufacturing power semiconductor modules mounted on an insulating base |
| 12/04/1985 | EP0163132A1 A semiconductor memory device comprising a matrix of six-transistor memory cells with a pair of CMOS inverters |
| 12/04/1985 | EP0162950A1 Method for diffusing a conductivity determining impurity in a semiconductor substrate and making electrical contact thereto |
| 12/04/1985 | EP0162866A1 A self-aligning process for placing a barrier metal over the source and drain regions of mos semiconductors |
| 12/03/1985 | US4556898 Semiconductor device |
| 12/03/1985 | US4556895 Field-effect transistor having a channel region of a Group III-V compound semiconductor and a Group IV semiconductor |
| 12/03/1985 | US4556851 Reduction of noise in signal from charge transfer devices |
| 12/03/1985 | US4556585 Vertically isolated complementary transistors |
| 12/03/1985 | US4555845 Temperature stable self-protected thyristor and method of producing |
| 12/03/1985 | US4555843 Method of fabricating density intensive non-self-aligned stacked CMOS |
| 12/03/1985 | US4555842 Heating with cap layer in place to lock dopant into lattice sites |
| 12/03/1985 | CA1197629A1 Semiconductor device with built-up low resistance contact |
| 12/03/1985 | CA1197628A1 Fabrication of stacked mos devices |
| 12/03/1985 | CA1197617A1 Static ram cell |
| 11/27/1985 | EP0162830A1 Improved semiconductor substrates |
| 11/27/1985 | EP0162774A2 Improvements in integrated circuit chip processing techniques and integrated circuit chip produced thereby |
| 11/27/1985 | EP0162737A1 Electrically erasable and reprogrammable memory point comprising a floating gate above a control gate |
| 11/27/1985 | EP0162529A1 Amorphous or microcrystalline semiconductor memory device |
| 11/27/1985 | EP0162460A2 Integrated circuit with an input protective device |
| 11/26/1985 | US4555721 Structure of stacked, complementary MOS field effect transistor circuits |
| 11/26/1985 | US4554729 Method of making semiconductor memory device |
| 11/26/1985 | US4554726 CMOS Integrated circuit technology utilizing dual implantation of slow and fast diffusing donor ions to form the n-well |
| 11/21/1985 | WO1985005224A1 Semiconductor device and arrangement |
| 11/21/1985 | WO1985005223A1 Monolithic integrated planar semi-semiconductor arrangement and process for its production |
| 11/21/1985 | WO1985005221A1 SILICON-GaAs EPITAXIAL COMPOSITIONS AND PROCESS OF MAKING SAME |
| 11/21/1985 | EP0161747A1 Semiconductor production method |
| 11/21/1985 | EP0161733A2 Low capacitance transistor cell element and transistor array |
| 11/21/1985 | EP0161556A2 Integrated circuit compatible thin film field effect transistor and method of making same |
| 11/21/1985 | EP0161555A2 Thin film field effect transistor and method of making same |
| 11/21/1985 | EP0161446A2 Semiconductor integrated circuit comprising a protective transistor and a MOS transistor with an LDD structure |
| 11/19/1985 | US4554675 Charge transfer device operative at high speed |
| 11/19/1985 | US4554644 Static RAM cell |
| 11/19/1985 | US4554572 Self-aligned stacked CMOS |
| 11/19/1985 | US4554571 Matched photonic detector-charge transfer reader assembly and image forming target using such an assembly |
| 11/19/1985 | US4554570 Vertically integrated IGFET device |
| 11/19/1985 | US4554569 Integrated electron circuits having Schottky field effect transistors of P- and N-type |
| 11/19/1985 | US4554568 Temperature-compensated Zener diode |
| 11/19/1985 | US4554045 Semiconductors; vapor depostion |
| 11/19/1985 | US4553436 Silicon accelerometer |
| 11/19/1985 | US4553317 Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors |
| 11/19/1985 | US4553315 N Contact compensation technique |
| 11/19/1985 | CA1197023A1 Self-aligned power mosfet with integral source-base short and methods of making |
| 11/13/1985 | EP0161097A2 Optically phase-locked semiconductor devices |
| 11/13/1985 | EP0161023A1 Charge-coupled semiconductor device with dynamic control |
| 11/13/1985 | EP0160965A2 Method of manufacturing a semiconductor device with a stacked-gate-electrode structure |
| 11/13/1985 | EP0160941A2 High voltage interconnect system for a semiconductor integrated circuit |
| 11/13/1985 | EP0160919A2 Process for forming ic wafer with buried zener diode |
| 11/13/1985 | EP0160720A1 Semiconductor memory cell having an electrically floating memory gate |
| 11/12/1985 | US4553152 Monolithic infrared ray charge transfer element |
| 11/12/1985 | US4553151 Bidirectional power FET with field shaping |
| 11/12/1985 | US4553125 High voltage resistance element |
| 11/12/1985 | US4553098 Battery checker |
| 11/12/1985 | US4553041 Monolithic zero crossing triac driver |
| 11/12/1985 | US4551911 Method for manufacturing semiconductor device |
| 11/12/1985 | US4551909 Method of fabricating junction field effect transistors |
| 11/12/1985 | US4551907 Process for fabricating a semiconductor device |
| 11/12/1985 | US4551906 Method for making self-aligned lateral bipolar transistors |
| 11/12/1985 | US4551904 Opposed gate-source transistor |
| 11/10/1985 | CN85200309U Sensor for the temperature measurement and control in a wider temperature range |
| 11/07/1985 | WO1985004985A2 Devices formed and processes utilizing organic materials |
| 11/07/1985 | WO1985004984A1 Cmos integrated circuit technology |
| 11/06/1985 | EP0160525A2 A gate turn-off Thyristor and a method of producing the same |
| 11/06/1985 | EP0160403A2 Growing high resistivity quaternary material by liquid phase epitaxy |
| 11/06/1985 | EP0160377A1 Heterojunction photo-FET and method of making the same |
| 11/06/1985 | EP0160365A1 Method of making amorphous semiconductor alloys and devices using microwave energy |
| 11/06/1985 | EP0160255A2 Field effect transistor device and method of making same |
| 11/06/1985 | EP0160183A2 High voltage mos field effect transistor |
| 11/06/1985 | EP0160077A1 Cmos integrated circuit configuration for eliminating latchup |
| 11/06/1985 | EP0160003A1 Mos floating gate memory cell and process for fabricating same. |
| 11/06/1985 | EP0159994A1 Multi-gate field effect transistor. |
| 11/05/1985 | US4551762 Dark-current level regulation in solid-state devices |
| 11/05/1985 | US4551744 High switching speed semiconductor device containing graded killer impurity |
| 11/05/1985 | US4551743 Semiconductor integrated circuit with isolation region made of dielectric material |
| 11/05/1985 | US4551394 Gallium arsenide on silicon |
| 11/05/1985 | US4550612 Integrated pressure sensor |
| 11/05/1985 | US4550491 Semiconductors |
| 11/05/1985 | US4550490 Monolithic integrated circuit |
| 11/05/1985 | US4550489 Heterojunction semiconductor |
| 11/05/1985 | CA1196419A1 Three gate non-volatile memory cell |
| 10/30/1985 | EP0159935A2 Method for inhibiting dopant out-diffusion |
| 10/30/1985 | EP0159824A2 Semiconductor device with recessed capacitor |
| 10/30/1985 | EP0159797A2 Thyristor device and process for producing it |
| 10/30/1985 | EP0159781A1 Sensing apparatus |
| 10/30/1985 | EP0159758A1 Charge-coupled device |
| 10/30/1985 | EP0159663A2 High-density V-groove MOS-controlled thyristors, insulated-gate transistors, and MOSFETs, and methods for fabrication |
| 10/30/1985 | EP0159617A1 Method of producing highly integrated MOS field-effect transistors |
| 10/30/1985 | EP0159601A2 Logic circuit arrangement with appropriately constructed field-effect transistors |
| 10/30/1985 | EP0159544A1 Avalanche photodiode and its manufacturing method |
| 10/30/1985 | EP0075575B1 Electronic circuit |
| 10/29/1985 | US4550390 Semiconductor memory device |
| 10/29/1985 | US4550332 Gate controlled semiconductor device |
| 10/29/1985 | US4550331 Multilayer modulation doped heterostructure charge coupled device |
| 10/29/1985 | US4550330 Signal translating device |
| 10/29/1985 | US4550284 MOS Cascode current mirror |
| 10/29/1985 | US4550014 Method for production of free-standing polycrystalline boron phosphide film |
| 10/29/1985 | US4549927 Semiconductors |