| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/14/1986 | US4563807 Method for making semiconductor device utilizing molecular beam epitaxy to form the emitter layers |
| 01/14/1986 | US4563806 Liquid crystal display |
| 01/14/1986 | CA1199430A1 Method of producing semiconductor device |
| 01/14/1986 | CA1199427A1 Three-dimensional semiconductor device |
| 01/14/1986 | CA1199423A1 Semiconductor integrated circuit capacitor |
| 01/10/1986 | CN85104089A Process of manufacturing silicon transistor operative in fullrange of temperature |
| 01/08/1986 | EP0167440A1 Protective triac without gate realized with the aid of a high-resistance substrate |
| 01/08/1986 | EP0167078A1 Light-triggered thyristor device |
| 01/08/1986 | EP0166983A2 Method of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devices |
| 01/08/1986 | EP0166977A2 Gate turn-off thyristor |
| 01/08/1986 | EP0166923A2 High performance bipolar transistor having a lightly doped guard ring disposed between the emitter and the extrinsic base region |
| 01/08/1986 | EP0037401B1 Ohmic contact to p-type inp or ingaasp |
| 01/07/1986 | US4563752 Series/parallel/series shift register memory comprising redundant parallel-connected storage registers, and display apparatus comprising a picture memory thus organized |
| 01/07/1986 | US4563698 SCR Having multiple gates and phosphorus gettering exteriorly of a ring gate |
| 01/07/1986 | US4563696 Ballistic transport-type semiconductor device for deflecting electrons |
| 01/07/1986 | US4562640 Method of manufacturing stable, low resistance contacts in integrated semiconductor circuits |
| 01/07/1986 | US4562638 Method for the simultaneous manufacture of fast short channel and voltage-stable MOS transistors in VLSI circuits |
| 01/02/1986 | EP0166647A1 Method of producing at least one thin-film field-effect transistor , and transistor obtained |
| 01/02/1986 | EP0166593A2 A semiconductor laser device |
| 01/02/1986 | EP0166344A2 Means for alleviating emitter contact stress in bipolar transistors |
| 01/02/1986 | EP0166343A2 A bistable ballistic space charge semiconductor device |
| 01/02/1986 | EP0166342A2 Method of producing a gallium arsenide field effect transistor device |
| 01/02/1986 | EP0166261A2 Static field-induced semiconductor devices |
| 01/02/1986 | EP0166218A2 Silicon-on-insulator transistors |
| 01/02/1986 | EP0166208A2 Charge storage structure for nonvolatile memory |
| 01/02/1986 | EP0166167A2 A process for manufacturing a semiconductor device comprising p-channel and n-channel MISFETs |
| 01/02/1986 | EP0166142A2 Metal silicide channel stoppers for integrated circuits and method for making the same |
| 01/02/1986 | EP0166112A2 Semiconductor device with bonding pads surrounded by source and/or drain regions |
| 01/02/1986 | EP0166003A1 Semiconductor integrated circuit |
| 01/02/1986 | EP0165971A1 Method of making a bipolar junction transistor. |
| 12/31/1985 | US4562453 Complementary metal-oxide semiconductor integrated circuit device of master slice type |
| 12/31/1985 | US4562452 Charge coupled device having meandering channels |
| 12/31/1985 | US4562451 Semiconductor device having a resistor region with an enhanced breakdown voltage |
| 12/31/1985 | US4562363 Method for using a charge coupled device as a peak detector |
| 12/31/1985 | US4562092 Method of fabricating complex microcircuit boards, substrates and microcircuits and the substrates and microcircuits |
| 12/31/1985 | US4561916 Method of growth of compound semiconductor |
| 12/31/1985 | US4561907 Process for forming low sheet resistance polysilicon having anisotropic etch characteristics |
| 12/31/1985 | US4561172 Integrated circuit fabrication method utilizing selective etching and oxidation to form isolation regions |
| 12/31/1985 | US4561170 Method of making field-plate isolated CMOS devices |
| 12/31/1985 | US4561168 Method of making shadow isolated metal DMOS FET device |
| 12/31/1985 | CA1198832A1 Polycrystalline silicon diode with metal silicide contact |
| 12/27/1985 | EP0165863A1 Method of manufacturing at least one thin film field-effect transistor, and transistor produced by this method |
| 12/27/1985 | EP0165798A1 Semiconductor device comprising N-channel and P-channel transistors and production method |
| 12/27/1985 | EP0165644A1 Semiconductor device having an increased breakdown voltage |
| 12/27/1985 | EP0165433A2 High-speed field-effect transistor |
| 12/27/1985 | EP0165419A2 Buried-gate structure-type semiconductor switching device |
| 12/24/1985 | US4561008 Ballasted, gate controlled semiconductor device |
| 12/24/1985 | US4561004 High density, electrically erasable, floating gate memory cell |
| 12/24/1985 | US4561003 Field effect transistor |
| 12/24/1985 | US4560582 Single crystal silicon substrate; double doping with arsenic or boron and phosphorous |
| 12/24/1985 | US4560421 Forming insulative film on substrate, masking, removal of mask pattern, and selectively etching to give isolation regions |
| 12/24/1985 | US4559697 Method of fixing insertion electrode panel in compression-bonded semiconductor device |
| 12/24/1985 | US4559696 Doping silicon with carbon and nitrogen |
| 12/24/1985 | US4559694 Method of manufacturing a semiconductor device |
| 12/24/1985 | US4559693 Process for fabricating field effect transistors |
| 12/19/1985 | WO1985005737A1 Semiconductor transducer |
| 12/19/1985 | WO1985005736A1 Tri-well cmos technology |
| 12/19/1985 | WO1985005733A1 High density ic module assembly |
| 12/18/1985 | EP0165106A2 Semiconductor memory device |
| 12/18/1985 | EP0165027A2 Thin film field effect transistors utilizing a polypnictide semiconductor |
| 12/18/1985 | EP0164976A2 Method of producing a contact for a semiconductor device |
| 12/18/1985 | EP0164867A2 An integrated field controlled thyristor structure with grounded cathode |
| 12/18/1985 | EP0164781A2 A self-aligned split gate EPROM and a method of manufacturing the same |
| 12/18/1985 | EP0164737A2 A method of fabricating self-aligned regions in a substrate |
| 12/18/1985 | EP0164720A2 An ohmic contact for an intermetallic compound semiconductor and a method of providing such a contact |
| 12/18/1985 | EP0164645A2 Silicon semiconductor device having a contour of the border formed by chemical attack, and process for manufacturing this device |
| 12/18/1985 | EP0164605A2 Method of manufacturing nonvolatile semiconductor EEPROM device |
| 12/18/1985 | EP0164541A2 Integrated circuit compatible thin film field effect transistor & method of making same |
| 12/18/1985 | EP0164517A1 Heterojunction transistors |
| 12/18/1985 | EP0164449A2 Process for producing a semiconductor integrated circuit device including a MISFET |
| 12/17/1985 | US4559638 Charge transfer device having an improved read-out portion |
| 12/17/1985 | US4559551 Semiconductor device |
| 12/17/1985 | US4559550 CCD Type solid-state imaging device |
| 12/17/1985 | US4559549 Data storage devices with vertical charge transfer |
| 12/17/1985 | US4559547 Semiconductor device |
| 12/17/1985 | US4559238 Modifying depth with changing structural configuration |
| 12/17/1985 | US4558509 Doping, annealing;forming self-aligned channels |
| 12/17/1985 | US4558508 Integrated circuits using lithographic masking |
| 12/17/1985 | CA1198177A1 Method for using a charge coupled device for a peak detector |
| 12/11/1985 | EP0164292A1 Turn-off thyristor with an anode-sided gate |
| 12/11/1985 | EP0164281A1 Process for producing a buried isolation layer in a semiconductor substrate by implantation |
| 12/11/1985 | EP0164186A1 Method of manufacturing CMOS devices |
| 12/11/1985 | EP0164106A2 PNPN switch device |
| 12/11/1985 | EP0164096A2 Lateral bidirectional power fet with notched multi-channel stacking |
| 12/11/1985 | EP0164095A2 Vertical bidirectional stacked power fet |
| 12/11/1985 | EP0164094A2 Isolated bidirectional power fet |
| 12/11/1985 | EP0163871A1 Method of producing gate electrodes composed of double layers made of high-melting metal silicides and doped polycrystalline silicon |
| 12/11/1985 | EP0163729A1 Silicon gigabits per second metal-oxide-semiconductor device processing. |
| 12/11/1985 | EP0096686A4 Semiconductor tetrode. |
| 12/10/1985 | US4558431 Memory system for storing analog information |
| 12/10/1985 | US4558344 Electrically-programmable and electrically-erasable MOS memory device |
| 12/10/1985 | US4558341 Charge transfer with meander channel |
| 12/10/1985 | US4558340 Alkali metal-group 5 compound as semiconductor |
| 12/10/1985 | US4558339 Electrically alterable, nonvolatile floating gate memory device |
| 12/10/1985 | US4558338 Insulated gate type field effect transistor having a silicon gate electrode |
| 12/10/1985 | US4558337 Semiconductors, doped and undoped regions |
| 12/10/1985 | US4558336 MBE Growth technique for matching superlattices grown on GaAs substrates |
| 12/10/1985 | US4558243 Bidirectional power FET with shorting-channel off state |
| 12/10/1985 | CA1197929A1 Schottky diode - polycrystalline silicon resistor memory cell |
| 12/10/1985 | CA1197926A1 Zero drain overlap and self-aligned contacts and contact methods for mod devices |