| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/14/1986 | EP0181206A2 Semiconductor devices |
| 05/14/1986 | EP0181162A2 A single transistor/capacitor semiconductor memory device and method for manufacture |
| 05/14/1986 | EP0181091A2 Schottky gate field effect transistor and manufacturing method thereof |
| 05/14/1986 | EP0181002A2 Semiconductor device having high breakdown voltage |
| 05/13/1986 | US4589056 Multilayer-electroconductive, dielectric, and electroconductive layer |
| 05/13/1986 | US4589009 Diffusion metal oxide semiconductors with overlapping gates on polysilicon on zinc oxide over silicon substrate |
| 05/13/1986 | US4589005 Charge transfer device having improved electrodes |
| 05/13/1986 | US4589004 Semiconductor device monolithically comprising a V-MOSFET and bipolar transistor isolated from each other |
| 05/13/1986 | US4589002 Diode structure |
| 05/13/1986 | US4588975 Integrated sensor for force and motion |
| 05/13/1986 | US4588472 Piezoresistive pressure sensor, diaphragm configuration, dopes, masking, epitaxial, etching |
| 05/13/1986 | US4588451 Metal organic chemical vapor deposition of 111-v compounds on silicon |
| 05/13/1986 | US4587720 Process for the manufacture of a self-aligned thin-film transistor |
| 05/13/1986 | US4587718 Forming silicon dioxide and silicon nitride segments, pattering, heating with metal to give silicide |
| 05/13/1986 | US4587713 Method for making vertical MOSFET with reduced bipolar effects |
| 05/13/1986 | US4587712 Method for making vertical channel field controlled device employing a recessed gate structure |
| 05/13/1986 | US4587710 Method of fabricating a Schottky barrier field effect transistor |
| 05/13/1986 | US4587709 Method of making short channel IGFET |
| 05/13/1986 | CA1204524A1 Semiconductor device having a protection circuit |
| 05/13/1986 | CA1204521A1 Semiconductor device |
| 05/10/1986 | CN85108969A 互补半导体器件 Complementary semiconductor device |
| 05/10/1986 | CN85108008A Horizontal structure transistor and method of fabrication |
| 05/10/1986 | CN85107627A Process for making isothemal power transistor |
| 05/09/1986 | WO1986002779A1 Nonvolatile memory cell |
| 05/09/1986 | WO1986002778A1 Folded logic gate |
| 05/07/1986 | EP0180457A2 Semiconductor integrated circuit device and method for producing same |
| 05/07/1986 | EP0180363A2 Horizontal structure transistor and method of fabrication |
| 05/07/1986 | EP0180315A2 High breakdown voltage semiconductor device |
| 05/07/1986 | EP0180268A1 Process for manufacturing a semiconductor device, including a plasma treatment |
| 05/07/1986 | EP0180256A1 Method of manufacturing contacts on a semiconductor device |
| 05/07/1986 | EP0180255A2 Semiconductor device comprising a bipolar transistor and an insulated-gate FET |
| 05/07/1986 | EP0180104A2 Microwave device |
| 05/07/1986 | EP0180025A2 Semiconductor device comprising a bipolar transistor and a MOSFET |
| 05/07/1986 | EP0180009A2 A process of forming a contact to a compound semiconductor body |
| 05/07/1986 | EP0180003A2 Bipolar power transistor |
| 05/07/1986 | EP0179914A1 Liquid crystal display element and a method of producing the same |
| 05/06/1986 | USH64 Full-wave rectifier for CMOS IC chip |
| 05/06/1986 | US4587656 High voltage solid-state switch |
| 05/06/1986 | US4587547 Electrode structure for a semiconductor devices |
| 05/06/1986 | US4587546 Light-triggerable thyristor having a low light power requirement |
| 05/06/1986 | US4587545 High voltage dielectrically isolated remote gate solid-state switch |
| 05/06/1986 | US4587542 Guard ring for reducing pattern sensitivity in MOS/LSI dynamic RAM |
| 05/06/1986 | US4587541 Monolithic coplanar waveguide travelling wave transistor amplifier |
| 05/06/1986 | US4587540 Vertical MESFET with mesa step defining gate length |
| 05/06/1986 | US4586968 Process of manufacturing a high frequency bipolar transistor utilizing doped silicide with self-aligned masking |
| 05/06/1986 | US4586243 Photolithographic method |
| 05/06/1986 | US4586240 Vertical IGFET with internal gate and method for making same |
| 05/06/1986 | US4586239 Process of manufacturing a high-frequency vertical junction field-effect transistor |
| 05/06/1986 | US4586238 Method for manufacturing semiconductor devices |
| 05/06/1986 | CA1204223A1 Method for forming submicron bipolar transistor without epitaxial growth and the resulting structure |
| 05/06/1986 | CA1204222A1 Semiconductor device |
| 05/06/1986 | CA1204221A1 Mos semiconductor device |
| 05/06/1986 | CA1204045A1 Cobalt silicide metallization for semiconductor transistors |
| 04/30/1986 | EP0179693A1 Integrated-circuit structure containing high-voltage CMOS transistors and method of making the same |
| 04/30/1986 | EP0179407A2 Method for producing a DMOS semiconductor device |
| 04/30/1986 | EP0179369A2 Electrode and/or interconnection |
| 04/30/1986 | EP0179250A1 Sulfidization of compound semiconductor surfaces |
| 04/30/1986 | EP0179230A2 Thyristor with an increased dI/dt stability |
| 04/30/1986 | EP0179196A2 A method of forming a semiconductor device using a mask |
| 04/30/1986 | EP0179138A1 A method of forming a composite semiconductor structure. |
| 04/30/1986 | EP0179125A1 Devices formed and processes utilizing organic materials |
| 04/30/1986 | EP0179099A1 Monolithic integrated planar semi-semiconductor arrangement and process for its production. |
| 04/30/1986 | EP0179088A1 A latch-up resistant cmos structure for vlsi. |
| 04/29/1986 | US4586074 Impurity band conduction semiconductor devices |
| 04/29/1986 | US4586073 High voltage junction solid-state switch |
| 04/29/1986 | US4586072 Bipolar transistor with meshed emitter |
| 04/29/1986 | US4586071 Heterostructure bipolar transistor |
| 04/29/1986 | US4586070 Thyristor with abrupt anode emitter junction |
| 04/29/1986 | US4586065 Semiconductor device |
| 04/29/1986 | US4586064 DMOS with high-resistivity gate electrode |
| 04/29/1986 | US4586063 Gate electrode on gallium-arsenic semiconductor bodies |
| 04/29/1986 | US4586010 Charge splitting sampler systems |
| 04/29/1986 | US4585962 Semiconductor switching device utilizing bipolar and MOS elements |
| 04/29/1986 | US4585721 Photoconductive member comprising amorphous germanium, amorphous silicon and nitrogen |
| 04/29/1986 | US4585492 Rapid thermal annealing of silicon dioxide for reduced hole trapping |
| 04/29/1986 | US4585489 Method of controlling lifetime of minority carriers by electron beam irradiation through semi-insulating layer |
| 04/29/1986 | US4584763 One mask technique for substrate contacting in integrated circuits involving deep dielectric isolation |
| 04/29/1986 | US4584762 Lateral transistor separated from substrate by intersecting slots filled with substrate oxide for minimal interference therefrom and method for producing same |
| 04/29/1986 | US4584761 Integrated circuit chip processing techniques and integrated chip produced thereby |
| 04/29/1986 | US4584760 Method of manufacturing a semiconductor device having a polycrystalline silicon layer |
| 04/29/1986 | CA1203920A1 Polycrystalline silicon interconnections for bipolar transistor flip-flop |
| 04/24/1986 | WO1986002492A1 Method for resistor trimming by metal migration |
| 04/24/1986 | WO1986002489A1 Method for producing electronic circuits based on thin layers transistors and capacitors |
| 04/23/1986 | EP0178995A2 Aluminium metallized layer formed on silicon wafer |
| 04/23/1986 | EP0178991A2 A complementary semiconductor device having high switching speed and latchup-free capability |
| 04/23/1986 | EP0178968A2 Base coupled transistor logic |
| 04/23/1986 | EP0178801A2 Semiconductor device with imaginary base region |
| 04/23/1986 | EP0178713A1 Method of manufacturing a semiconductor device, in which an epitaxial layer doped with Mg is deposited on a semiconductor body |
| 04/23/1986 | EP0178673A2 Epitaxial layer structure grown on graded substrate and method of growing the same |
| 04/23/1986 | EP0178662A2 Method of manufacture for semiconductor accelerometer |
| 04/23/1986 | EP0178649A2 Complementary semiconductor device |
| 04/23/1986 | EP0178582A2 Reverse blocking type semiconductor device |
| 04/23/1986 | EP0178512A1 MOS circuit including an EEPROM |
| 04/23/1986 | EP0178447A2 A manufacturing method of an integrated circuit based on semiconductor-on-insulator technology |
| 04/23/1986 | EP0178440A2 Process of making dual well CMOS semiconductor structure |
| 04/23/1986 | EP0178387A2 Gate turn-off power semiconductor device |
| 04/23/1986 | EP0178383A2 Photocoupler device |
| 04/22/1986 | US4584697 Semiconductor device |
| 04/22/1986 | US4584671 Semiconductor memories |
| 04/22/1986 | US4584594 Logic structure utilizing polycrystalline silicon Schottky diodes |