| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 06/24/1986 | US4597060 EPROM array and method for fabricating |
| 06/24/1986 | US4597001 Thin film field-effect transistors with tolerance to electrode misalignment |
| 06/24/1986 | US4597000 Floating-gate memory cell |
| 06/24/1986 | US4596999 Power semiconductor component and process for its manufacture |
| 06/24/1986 | US4596605 Fabrication process of static induction transistor and solid-state image sensor device |
| 06/24/1986 | US4596070 Interdigitated IMPATT devices |
| 06/24/1986 | US4596069 Three dimensional processing for monolithic IMPATTs |
| 06/24/1986 | US4596068 Process for minimizing boron depletion in N-channel FET at the silicon-silicon oxide interface |
| 06/24/1986 | CA1206628A1 Process for producing a semiconductor component |
| 06/24/1986 | CA1206627A1 Lateral dmos transistor device having an injector region |
| 06/24/1986 | CA1206625A1 Method of manufacturing an insulated gate field effect transistor having source and drain extension regions |
| 06/24/1986 | CA1206623A1 Semiconductor device comprising at least one schottky- type rectifier having controllable barrier height and method for manufacturing such devices |
| 06/19/1986 | WO1986003621A1 Nitrided silicon dioxide layers for semiconductor integrated circuits |
| 06/19/1986 | WO1986003620A2 Process for forming diffusion regions in a semiconductor substrate |
| 06/18/1986 | EP0184827A2 A high speed and high power transistor |
| 06/17/1986 | US4595944 Resistor structure for transistor having polysilicon base contacts |
| 06/17/1986 | US4595943 Reduced beta vertical transistors and method of fabrication |
| 06/17/1986 | US4595941 Protection circuit for integrated circuit devices |
| 06/17/1986 | US4595939 Radiation-controllable thyristor with multiple, non-concentric amplified stages |
| 06/17/1986 | US4595428 Method for producing high-aspect ratio hollow diffused regions in a semiconductor body |
| 06/17/1986 | CA1206274A1 Mosfet-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single- polarity gate input signal |
| 06/17/1986 | CA1206273A1 Vertically integrated cmos logic gate |
| 06/11/1986 | EP0184350A1 Semiconductor latch circuit |
| 06/11/1986 | EP0184222A2 MOS type integrated circuit having charging and discharging transistors |
| 06/11/1986 | EP0184171A2 Device having improved contact metallization |
| 06/11/1986 | EP0184047A2 Field-effect transistor with self-aligned gate and method for its manufacture |
| 06/11/1986 | EP0184016A1 Heterojunction bipolar transistor |
| 06/11/1986 | EP0183995A1 Semiconductor device having a polycrystalline silicon interconnection layer and method for its manufacture |
| 06/11/1986 | EP0183837A1 Semiconductor transducer |
| 06/11/1986 | EP0183722A1 High density ic module assembly. |
| 06/10/1986 | US4594604 Charge coupled device with structures for forward scuppering to reduce noise |
| 06/10/1986 | US4594602 High speed diode |
| 06/10/1986 | US4594261 Method for producing thin film semiconductor device |
| 06/10/1986 | US4593457 Method for making gallium arsenide NPN transistor with self-aligned base enhancement to emitter region and metal contact |
| 06/10/1986 | US4593454 Process for manufacturing an integrated circuit with tantalum silicide connections utilizing self-aligned oxidation |
| 06/10/1986 | CN85108671A Semiconductor integrated circuit device and manufacturing process thereof |
| 06/10/1986 | CA1205923A1 Control of substrate injection in lateral bipolar transistors |
| 06/10/1986 | CA1205922A1 Self-aligned manufacture of fet |
| 06/05/1986 | WO1986003341A1 Trench transistor |
| 06/05/1986 | WO1986003339A1 Method for fabricating semiconductor devices and devices formed thereby |
| 06/05/1986 | WO1986003335A1 Method for manufacturing trench gate mos structures in ics and accordingly fabricated devices |
| 06/05/1986 | WO1986003333A2 High-performance trench capacitors for dram cells |
| 06/04/1986 | EP0183624A2 L-fast fabrication process for high speed bipolar analog large scale integrated circuits |
| 06/04/1986 | EP0183562A2 Polysilicon diodes |
| 06/04/1986 | EP0183550A2 Compound semiconductor device |
| 06/04/1986 | EP0183474A2 Semiconductor device |
| 06/04/1986 | EP0183235A2 Nonvolatile semiconductor memory device |
| 06/04/1986 | EP0183204A2 Process for fabricating semiconductor integrated circuit devices |
| 06/04/1986 | EP0183146A2 Semiconductor devices consisting of epitaxial material |
| 06/04/1986 | EP0183138A1 Method of producing highly integrated circuits of MOS transistors |
| 06/04/1986 | EP0183032A2 High density CMOS integrated circuit manufacturing process |
| 06/04/1986 | EP0182925A1 Insulated-gate field-effect transistor employing small band-gap material |
| 06/04/1986 | EP0182876A1 Tri-well cmos technology. |
| 06/04/1986 | EP0096062B1 Non-volatile semiconductor memory device and manufacturing method therefor |
| 06/03/1986 | US4593382 MOS dynamic memory device |
| 06/03/1986 | US4593307 High temperature stable ohmic contact to gallium arsenide |
| 06/03/1986 | US4593305 Heterostructure bipolar transistor |
| 06/03/1986 | US4593302 Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide |
| 06/03/1986 | US4593301 High electron mobility semiconductor device employing selectively doped heterojunction and dual, undoped spacer layers |
| 06/03/1986 | US4593300 Folded logic gate |
| 06/03/1986 | US4593214 Circuit for discharging bootstrapped nodes in integrated circuits with the use of transistors designed to withstand only the normal voltage |
| 06/03/1986 | US4592130 Method of fabricating a CCD read only memory utilizing dual-level junction formation |
| 06/03/1986 | CA1205577A1 Semiconductor device |
| 06/03/1986 | CA1205571A1 Semiconductor device having cmos structures |
| 05/28/1986 | EP0182717A2 A read only memory circuit |
| 05/28/1986 | EP0182422A2 High breakdown voltage semiconductor devices |
| 05/28/1986 | EP0182400A1 Method of manufacturing a bipolar transistor having emitter series resistors |
| 05/28/1986 | EP0182218A2 Method for dicing semiconductor wafer |
| 05/28/1986 | EP0182198A2 Single transistor electrically programmable device and method |
| 05/28/1986 | EP0182088A1 Schottky contact on a semiconductor surface and method of making the same |
| 05/28/1986 | EP0182067A2 Semiconductor device having increased immunity against alpha-particles and external noise |
| 05/28/1986 | EP0182008A2 Thyristor device with protection means |
| 05/27/1986 | US4591895 CMOS circuit with separate power lines to suppress latchup |
| 05/27/1986 | US4591890 Radiation hard MOS devices and methods for the manufacture thereof |
| 05/27/1986 | US4591889 Superlattice geometry and devices |
| 05/27/1986 | US4591398 Method for manufacturing a semiconductor device utilizing self-aligned oxide-nitride masking |
| 05/27/1986 | US4590666 Method for producing a bipolar transistor having a reduced base region |
| 05/27/1986 | US4590665 Method for double doping sources and drains in an EPROM |
| 05/27/1986 | US4590664 Method of fabricating low noise reference diodes and transistors |
| 05/21/1986 | EP0181812A1 Process for making a gate structure for integrated circuits |
| 05/21/1986 | EP0181789A1 High resolution image reproducer for real-time developing of insulated films |
| 05/21/1986 | EP0181760A2 A device comprising a pair of CMOS FETs and a method of making it |
| 05/21/1986 | EP0181714A1 Method of fabrication devices on semiconductor substrates |
| 05/21/1986 | EP0181681A2 Ohmic contacts for hydrogenated amorphous silicon |
| 05/21/1986 | EP0181355A1 Monolithic integrated planar semi-conductor device. |
| 05/20/1986 | US4590509 MIS high-voltage element with high-resistivity gate and field-plate |
| 05/20/1986 | US4590507 Variable gap devices |
| 05/20/1986 | US4590506 Charge-coupled buried-channel device with high-resistivity gate electrodes |
| 05/20/1986 | US4590504 Nonvolatile MOS memory cell with tunneling element |
| 05/20/1986 | US4590503 Electrically erasable programmable read only memory |
| 05/20/1986 | US4590502 Camel gate field effect transistor device |
| 05/20/1986 | US4590399 Superlattice piezoelectric devices |
| 05/20/1986 | US4590390 Solid state photonic detector with charge transfer reader and image-forming target using such a detector |
| 05/20/1986 | US4589936 Method for fabricating a semiconductor device by co-diffusion of arsenic and phosphorus |
| 05/20/1986 | US4589928 Method of making semiconductor integrated circuits having backside gettered with phosphorus |
| 05/20/1986 | US4589193 Metal silicide channel stoppers for integrated circuits and method for making the same |
| 05/20/1986 | US4589190 Fabrication of drilled and diffused junction field-effect transistors |
| 05/20/1986 | CA1204863A1 Late mask process for programming read only memories |
| 05/20/1986 | CA1204862A1 Programmable read only memory |
| 05/14/1986 | EP0181246A1 Semiconductor device with a Schottky contact, and method of making such a device |