Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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10/29/1985 | US4549340 Method of making CMOS semiconductor device using specially positioned, retained masks, and product formed thereby |
10/29/1985 | US4549336 Method of making MOS read only memory by specified double implantation |
10/29/1985 | CA1196135A1 Heat distortion-resistant thermoplastic semi- conductive composition |
10/29/1985 | CA1196111A1 Ingaas field effect transistor |
10/24/1985 | WO1985004761A1 PROCESS FOR FABRICATING GaAs FET WITH ION IMPLANTED CHANNEL LAYER |
10/24/1985 | WO1985004731A1 Liquid crystal display element and a method of producing the same |
10/23/1985 | EP0159273A2 Semiconductor device |
10/23/1985 | EP0159179A2 Improved bipolar transistor construction |
10/23/1985 | EP0159129A1 Low noise zener diode means and method |
10/23/1985 | EP0158752A2 Method of producing a GaAs JFET with self-aligned p-type gate |
10/23/1985 | EP0158749A1 Semiconducteur device having pressure loaded members |
10/22/1985 | US4549198 Semiconductor device |
10/22/1985 | US4549196 Lateral bipolar transistor |
10/22/1985 | US4549195 Heterojunction semiconductor device |
10/22/1985 | US4549193 Field effect transistor device utilizing critical buried channel connecting source and drain |
10/22/1985 | US4549096 Monolithically integrated semiconductor circuit with transistors |
10/22/1985 | US4548671 Method of making a charge-coupled device imager which includes an array of Schottky-barrier detectors |
10/22/1985 | US4547959 Uses for buried contacts in integrated circuits |
10/22/1985 | CA1195784A1 Polycrystalline thin-film transistor |
10/16/1985 | EP0158559A1 Method of interconnecting active regions and/or gates of C-MOS integrated circuits |
10/16/1985 | EP0158401A1 Semiconductor device comprising insulated gate field effect transistors |
10/16/1985 | EP0158371A1 Method of manufacturing a semiconductor device and device manufactured by the use of the method |
10/16/1985 | EP0158292A2 Semiconductor device having a drive circuit element and an output transistor |
10/16/1985 | EP0158186A2 Light quenchable thyristor device |
10/16/1985 | EP0157926A1 Method of producing a highly integrated circuit of MOS field-effect transistors |
10/16/1985 | EP0157780A1 High density mosfet with field oxide aligned channel stops and method of fabricating the same. |
10/15/1985 | US4547793 Trench-defined semiconductor structure |
10/15/1985 | US4547791 Semiconductor device |
10/15/1985 | US4547789 High current thin film transistor |
10/15/1985 | US4547743 Variable resistance gain control integrated circuit |
10/15/1985 | US4546540 Self-aligned manufacture of FET |
10/15/1985 | US4546537 Method for producing a semiconductor device utilizing V-groove etching and thermal oxidation |
10/15/1985 | US4546536 Fabrication methods for high performance lateral bipolar transistors |
10/15/1985 | US4546535 Small area field effect transistor device and making contact |
10/15/1985 | US4546534 Semiconductor device manufacture |
10/15/1985 | CA1195436A1 Semiconductor device |
10/15/1985 | CA1195435A1 Semiconductor device |
10/15/1985 | CA1195433A1 High performance driver for vlsi implementation |
10/10/1985 | WO1985004525A1 A latch-up resistant cmos structure for vlsi |
10/10/1985 | WO1985004524A1 Integrated circuit and method for biasing an epitaxial layer |
10/10/1985 | WO1985004480A1 Method of producing an isfet and same isfet |
10/09/1985 | EP0157677A1 Method of interconnecting active regions and/or gates of a C-MOS integrated circuit |
10/09/1985 | EP0157541A2 Sensor |
10/09/1985 | EP0157489A2 Amorphous silicon field-effect transistors, method for their manufacture and their use in liquid crystal display devices |
10/09/1985 | EP0157428A2 Semiconductor memory device with low-noise structure |
10/09/1985 | EP0157376A2 Charge transfer device and method |
10/09/1985 | EP0157226A1 Method of making a field-effect transistor |
10/09/1985 | EP0157207A2 Gate turn-off thyristor |
10/08/1985 | US4546401 Two-pole overcurrent protection device |
10/08/1985 | US4546376 Device for semiconductor integrated circuits |
10/08/1985 | US4546375 Vertical IGFET with internal gate and method for making same |
10/08/1985 | US4546373 Semiconductor device with a tantalum iridium barrier layer contact structure |
10/08/1985 | US4546371 Semiconductor device having an improved dual-gate field effect transistor |
10/08/1985 | US4546369 Light-activated amplified gate bi-directional thyristor |
10/08/1985 | US4546368 Charge transfer device having a precisely controlled injection rate |
10/08/1985 | US4546367 Lateral bidirectional notch FET with extended gate insulator |
10/08/1985 | US4546366 Polysilicon/silicon junction field effect transistors and integrated circuits (POSFET) |
10/08/1985 | US4545824 Process for producing a GaAs or InP semiconductor by pre-implantation followed by transition metal diffusion |
10/08/1985 | US4545113 Process for fabricating a lateral transistor having self-aligned base and base contact |
10/08/1985 | US4545112 Method of manufacturing thin film transistors and transistors made thereby |
10/08/1985 | US4545110 Method of manufacturing an insulated gate field effect device |
10/08/1985 | US4545109 Forming ddoped layer on group 3-groups semi insulating material and etching |
10/02/1985 | EP0156647A2 Thin film transistor and method of making the same |
10/02/1985 | EP0156585A2 Travelling-wave field-effect transistor |
10/02/1985 | EP0156551A1 Ohmic contact for III-V semiconductor and method of forming it |
10/02/1985 | EP0156528A2 High-voltage thin-film transistor |
10/02/1985 | EP0156417A1 Semiconductor device having at least a non-volatile memory transistor |
10/02/1985 | EP0156366A2 Buried contact solar cell |
10/02/1985 | EP0156185A1 Electrode pattern of semiconductor device and method of forming thereof |
10/02/1985 | EP0156022A2 Semiconductor device controlled by field effect |
10/02/1985 | EP0031366B1 Vertical field effect transistor |
10/01/1985 | US4545034 Contactless tite RAM |
10/01/1985 | US4544940 Method for more uniformly spacing features in a lateral bipolar transistor |
10/01/1985 | US4543706 Fabrication of junction field effect transistor with filled grooves |
10/01/1985 | EP0119260A4 Cmos integrated circuit with guard bands for latch-up protection. |
10/01/1985 | CA1194616A1 Process for forming a shallow, high-concentration impurity layer in a semiconductor body |
10/01/1985 | CA1194614A1 Process of ion implant masking in cmos manufacture and resultant structure |
10/01/1985 | CA1194613A1 Microelectronic shadow masking process for reducing punchthrough |
10/01/1985 | CA1194612A1 Process for forming complementary integrated circuit devices |
09/26/1985 | WO1985004285A1 Integrated bipolar-mos semiconductor device with common colle ctor and drain |
09/26/1985 | WO1985004284A1 Method of fabricating vlsi cmos devices |
09/25/1985 | EP0155698A2 A method for manufacturing a semiconductor integrated circuit device provided with an improved isolation structure |
09/25/1985 | EP0155576A1 Radiation-resistant semiconductor device |
09/25/1985 | EP0155473A1 Power semiconductor module and method of manufacture |
09/24/1985 | US4543596 Insulated-gate field-effect transistor (IGFET) with injector zone |
09/24/1985 | US4543593 Semiconductor protective device |
09/24/1985 | US4543320 Method of making a high performance, small area thin film transistor |
09/24/1985 | US4543267 Method of making a non-single-crystalline semi-conductor layer on a substrate |
09/24/1985 | US4542580 Vapor deposition of amorphous silicon doped with arsenic and phosphorus onto silicon substrate |
09/24/1985 | CA1194242A1 Lateral bidirectional notch fet |
09/24/1985 | CA1194235A1 Compensation of 1st order transfer-inefficiency effect in a c.t.d. |
09/24/1985 | CA1194193A1 Semiconductor device and method of manufacturing same |
09/24/1985 | CA1194146A1 Voltage translator |
09/24/1985 | CA1194143A1 Detecting binary information from a charge transfer device |
09/18/1985 | EP0155215A2 High electron mobility semiconductor device employing selectively doped heterojunction |
09/18/1985 | EP0155117A2 Voltage detecting device |
09/18/1985 | EP0154871A2 One-transistor dynamic random-access memory |
09/18/1985 | EP0154670A2 Process for producing a semiconductor device having insulating film |
09/17/1985 | US4542481 Semiconductor memory cell |
09/17/1985 | US4542400 Semiconductor device with multi-layered structure |