| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/19/1986 | EP0174773A2 Semiconductor device having interconnection layers |
| 03/19/1986 | EP0174743A2 Process for transition metal nitrides thin film deposition |
| 03/19/1986 | EP0174712A2 Semiconductor devices having electrically conductive paths |
| 03/19/1986 | EP0174553A2 Method for production of silicon thin film piezoresistive devices |
| 03/19/1986 | EP0174473A1 Monolithic integrated power output stage |
| 03/19/1986 | EP0174469A2 Charge-up circuit |
| 03/19/1986 | EP0174438A1 Semiconductor switching device with reduced defect density |
| 03/19/1986 | EP0174431A1 Liquid crystal display devices and method for production thereof |
| 03/19/1986 | EP0174318A1 Integrated bipolar-mos semiconductor device with common colle ctor and drain |
| 03/19/1986 | EP0042380B1 Method for achieving ideal impurity base profile in a transistor |
| 03/19/1986 | CN85201923U Force sensor for installing four ends unit in the centre of silicon film |
| 03/18/1986 | US4577295 Hybrid E2 cell and related array |
| 03/18/1986 | US4577233 Solid image-pickup device |
| 03/18/1986 | US4577215 Dual word line, electrically alterable, nonvolatile floating gate memory device |
| 03/18/1986 | US4577213 Internally matched Schottky barrier beam lead diode |
| 03/18/1986 | US4577212 Structure for inhibiting forward bias beta degradation |
| 03/18/1986 | US4577211 Integrated circuit and method for biasing an epitaxial layer |
| 03/18/1986 | US4577210 Controlled rectifier having ring gate with internal protrusion for dV/dt control |
| 03/18/1986 | US4577208 Bidirectional power FET with integral avalanche protection |
| 03/18/1986 | US4576052 Semiconductor transducer |
| 03/18/1986 | US4575924 Process for fabricating quantum-well devices utilizing etch and refill techniques |
| 03/18/1986 | US4575920 Method of manufacturing an insulated-gate field-effect transistor |
| 03/18/1986 | EP0087462A4 Process for manufacturing an integrated circuit structure. |
| 03/18/1986 | CA1202121A1 Photolithographic process for fabricating thin film transistors |
| 03/13/1986 | WO1986001641A1 Mos transistors having schottky layer electrode regions and method of their production |
| 03/13/1986 | WO1986001640A1 Diffusion barrier layer for integrated-circuit devices |
| 03/13/1986 | WO1986001638A1 Semiconductor integrated circuits gettered with phosphorus |
| 03/12/1986 | EP0174185A2 Semiconductor device and manufacturing method thereof |
| 03/12/1986 | EP0174038A2 Resistive voltage divider for integrated circuits |
| 03/12/1986 | EP0174022A1 Transistor structure |
| 03/12/1986 | EP0173953A2 Method for manufacturing a semiconductor device having a gate electrode |
| 03/12/1986 | EP0173734A1 Improved integrated circuit structure having intermediate metal silicide layer and method of making same |
| 03/12/1986 | EP0173733A1 Capacitive device. |
| 03/12/1986 | EP0173690A1 Thermally-activated, shorting diode switch having non-operationally-alternable junction path. |
| 03/11/1986 | US4575743 Double layer ROM integrated circuit |
| 03/11/1986 | US4574468 Method of manufacturing a semiconductor device having narrow coplanar silicon electrodes |
| 03/11/1986 | US4574467 N- well CMOS process on a P substrate with double field guard rings and a PMOS buried channel |
| 03/11/1986 | CA1201822A1 Laser induced flow ge-o based materials |
| 03/11/1986 | CA1201816A1 Semiconductor device having a reduced surface field strength |
| 03/05/1986 | EP0173643A2 Semiconductor device with a layer of transparent n-type material and use of such devices |
| 03/05/1986 | EP0173611A2 Self-aligned metal silicide process for integrated circuits having self-aligned polycrystalline silicon electrodes |
| 03/05/1986 | EP0173610A2 An improved method for controlling lateral diffusion of silicon in a self-aligned TiSi2 process |
| 03/05/1986 | EP0173566A2 Multi-layered material having graded properties |
| 03/05/1986 | EP0173558A2 Mesa structure comprising a compound semiconductor |
| 03/05/1986 | EP0173524A2 Method of eliminating titanium silicide penetration into polysilicon during the oxidation of a polycide structure |
| 03/05/1986 | EP0173275A2 Light-activated thyristor |
| 03/05/1986 | EP0172889A1 Integrated circuit chip assembly |
| 03/05/1986 | EP0172888A1 Versatile generic chip substrate. |
| 03/05/1986 | EP0172878A1 A bipolar transistor with active elements formed in slots. |
| 03/04/1986 | USRE32090 Silicon integrated circuits |
| 03/04/1986 | USH29 Tunnett diode and method of making |
| 03/04/1986 | US4574310 One-dimensional semiconductor imaging device |
| 03/04/1986 | US4574298 III-V Compound semiconductor device |
| 03/04/1986 | US4574296 Gate turn-off thyristor with a cathode base layer having four distinct impurity concentrations |
| 03/04/1986 | US4574295 Charge coupled device having meandering channels |
| 03/04/1986 | US4574273 Circuit for changing the voltage level of binary signals |
| 03/04/1986 | US4574209 Split gate EFET and circuitry |
| 03/04/1986 | US4574208 Raised split gate EFET and circuitry |
| 03/04/1986 | US4574207 Lateral bidirectional dual notch FET with non-planar main electrodes |
| 03/04/1986 | US4573256 Method for making a high performance transistor integrated circuit |
| 03/04/1986 | CA1201538A1 Method of manufacturing field effect transistors |
| 03/04/1986 | CA1201537A1 Semiconductor structures and manufacturing methods |
| 03/04/1986 | CA1201536A1 Carrier freezeout field-effect device |
| 03/04/1986 | CA1201530A1 Charge transfer device |
| 02/27/1986 | WO1986001338A1 Method of producing semiconductor devices |
| 02/27/1986 | WO1986001336A1 Method for producing an integrated circuit of the mis type |
| 02/26/1986 | EP0172474A2 CCD output signal generating circuit |
| 02/26/1986 | EP0172350A1 Complementary bi-mis gate circuit |
| 02/26/1986 | EP0172338A1 Gate turn-off thyristor |
| 02/26/1986 | EP0172327A2 Integrable power transistor device |
| 02/26/1986 | EP0172305A1 Mos transistor circuit with breakdown protection |
| 02/26/1986 | EP0172193A1 Programmable read-only memory cell and method of fabrication. |
| 02/26/1986 | EP0172176A1 Integrated circuit having dislocation-free substrate |
| 02/26/1986 | CN85201474U 半导体基片 A semiconductor substrate |
| 02/25/1986 | US4573144 Common floating gate programmable link |
| 02/25/1986 | US4573066 Breakdown voltage increasing device with multiple floating annular guard rings of decreasing lateral width |
| 02/25/1986 | US4573065 Radial high voltage switch structure |
| 02/25/1986 | US4573064 GaAs/GaAlAs Heterojunction bipolar integrated circuit devices |
| 02/25/1986 | US4573022 Semiconductor integrated circuit using vertical PNP transistors |
| 02/25/1986 | US4572947 Triggering method for light triggered thyristors |
| 02/25/1986 | US4572765 Method of fabricating integrated circuit structures using replica patterning |
| 02/25/1986 | US4571817 Method of making closely spaced contacts to PN-junction using stacked polysilicon layers, differential etching and ion implantations |
| 02/25/1986 | US4571816 Method of making a capacitor with standard self-aligned gate process |
| 02/25/1986 | US4571815 Method of making vertical channel field controlled device employing a recessed gate structure |
| 02/25/1986 | CA1201218A1 Integrated semiconductor circuit with bipolar transistor structure, and a fabrication method thereof |
| 02/25/1986 | CA1201217A1 Insulated gate rectifier with improved current- carrying capability |
| 02/25/1986 | CA1201216A1 Formation of submicron features in semiconductor devices |
| 02/25/1986 | CA1201215A1 Gate turn-off thyristor |
| 02/25/1986 | CA1201214A1 Semiconductor device having turn-on and turn-off capabilities |
| 02/25/1986 | CA1201204A1 Serpentine charge transfer device |
| 02/20/1986 | EP0151585A4 Shallow-junction semiconductor devices. |
| 02/19/1986 | EP0172015A2 Marking apparatus and method for fluid jet assisted ion projection imaging systems |
| 02/19/1986 | EP0171864A1 Method of fabricating an insulated gate type field-effect transistor |
| 02/19/1986 | EP0171531A1 High electron mobility semiconductor device |
| 02/19/1986 | EP0171495A1 MOS transistor circuit with breakdown protection |
| 02/19/1986 | EP0171474A1 A method for producing a thyristor device |
| 02/19/1986 | EP0171445A1 Integrated monolithic circuit with an integrated MIS-capacitor |
| 02/18/1986 | US4571705 Nonvolatile semiconductor memory device with electrically selectable, erasable and programmable function |
| 02/18/1986 | US4571704 Nonvolatile semiconductor memory unit |
| 02/18/1986 | US4571661 Semiconductor vibration detection device with lever structure |