Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1993
12/09/1993DE4218398A1 High current pulse thyristor with two opposite semiconductor main faces - has GTO structure with highly doped emitter distributed over first face in form of narrow cathode fingers
12/09/1993CA2134755A1 Sub-nanoscale electronic systems, devices and processes
12/08/1993EP0573258A1 Liquid crystal display device
12/08/1993EP0573170A1 High density EEPROM cell array with novel programming scheme and method of manufacture
12/08/1993EP0573169A1 Segment-erasable flash EPROM
12/08/1993EP0573168A1 Fast access AMG EPROM
12/08/1993EP0573164A1 Full feature high density EEPROM cell with poly tunnel spacer and method of manufacture
12/08/1993EP0573017A1 Semiconductor device and method of fabricating the same
12/08/1993EP0572826A1 Thyristor with break-down region
12/08/1993CN1079351A Device for transportation of electric charge and method for driving same, and apparatus for photoing solid picture
12/07/1993US5268870 Flash EEPROM system and intelligent programming and erasing methods therefor
12/07/1993US5268589 Semiconductor chip having at least one electrical resistor means
12/07/1993US5268586 Vertical power MOS device with increased ruggedness and method of fabrication
12/07/1993US5268585 Non-volatile memory and method of manufacturing the same
12/07/1993US5268582 P-N junction devices with group IV element-doped group III-V compound semiconductors
12/07/1993US5268330 Process for improving sheet resistance of an integrated circuit device gate
12/07/1993US5268327 Epitaxial compositions
12/07/1993US5268320 Programmable by transferring charge onto floating gate member insulated from substrate
12/07/1993US5268319 Controlled channel doping in electrically programmable read only memory cell
12/07/1993US5268318 Highly compact EPROM and flash EEPROM devices
12/07/1993US5268317 Method of forming shallow junctions in field effect transistors
12/07/1993US5268315 Masking, patterning, etching multilayer structure; overcoating with passivation layer
12/07/1993US5268314 Overcoating wafer with oxide, forming buried collector, emitter
12/07/1993US5268313 Method of manufacturing a semiconductor device having a spacer
12/07/1993CA1325056C Photosensitive pixel with exposed blocking element
12/03/1993CA2070216A1 Interdigital source and drain islands mesfet (isdi-fet)
12/02/1993DE4318028A1 Liquid crystal flat screen display - has ring formed around display point electrodes to form display point stages.
12/02/1993DE4317992A1 Synapse MOS transistor esp. for neural network - has gate electrodes formed on common oxide layer having weighted lengths relative to source and drain electrodes
12/01/1993EP0572213A2 A method of forming a MOSFET structure with planar surface
12/01/1993EP0572137A1 Charge skimming and variable integration time in focal plane arrays
12/01/1993EP0571994A2 NPN heterojunction bipolar transistor including antimonide base formed on semi-insulating indium phosphide substrate
12/01/1993EP0571976A2 Static RAM with thin film transistor
12/01/1993EP0571756A2 High density, three-dimensional, intercoupled circuit structure
12/01/1993EP0571695A1 High voltage resistor integrated on a semiconductor substrate
12/01/1993EP0571692A1 EPROM cell with a readily scalable down interpoly dielectric
12/01/1993EP0332680B1 Process of forming a t-gate metal structure on a substrate
11/1993
11/30/1993US5267209 EEPROM programming method
11/30/1993US5267195 Semiconductor non-volatile memory device
11/30/1993US5267194 Electrically erasable programmable read-only-memory cell with side-wall floating gate
11/30/1993US5266832 Semiconductor apparatus and method for producing the same
11/30/1993US5266831 Semiconductor structure
11/30/1993US5266830 Hetero junction bipolar transistor with reduced surface recombination current
11/30/1993US5266827 Semiconductor pressure sensor assembly having an improved package structure
11/30/1993US5266825 Thin-film device
11/30/1993US5266824 SOI semiconductor substrate
11/30/1993US5266823 Semiconductor device having film for controlling diffusion of impurity
11/30/1993US5266820 Distributed threshold voltage field effect transistor
11/30/1993US5266819 Self-aligned gallium arsenide/aluminum gallium arsenide collector-up heterojunction bipolar transistors capable of microwave applications and method
11/30/1993US5266818 No increase in its resistance
11/30/1993US5266816 Polysilicon thin film semiconductor device containing nitrogen
11/30/1993US5266814 Optically activated resonant-tunneling transistor
11/30/1993US5266517 Method for forming a sealed interface on a semiconductor device
11/30/1993US5266515 Fabricating dual gate thin film transistors
11/30/1993US5266510 High performance sub-micron p-channel transistor with germanium implant
11/30/1993US5266509 Fabrication method for a floating-gate field-effect transistor structure
11/30/1993US5266508 Process for manufacturing semiconductor device
11/30/1993US5266507 Method of fabricating an offset dual gate thin film field effect transistor
11/30/1993US5266506 Method of making substantially linear field-effect transistor
11/28/1993CA2095739A1 Charge skimming and variable integration time in focal plane arrays
11/25/1993WO1993023982A1 Stacked devices for multichip modules
11/25/1993WO1993023883A1 Integrated heterostructure of group ii-vi semiconductor materials including epitaxial ohmic contact and method of fabricating same
11/25/1993WO1993023879A1 Electronic component with at least one current channel containing a two-dimensional charge carrier gas
11/25/1993WO1993023878A1 Semiconductor device
11/25/1993WO1993023877A1 Iii-v based integrated transistor
11/25/1993WO1993023876A1 Current mirror with at least one pnp transistor
11/25/1993DE4316509A1 Semiconductor component with improved performance - comprises integrated half-bridge switch in single chip, one element being vertical thyristor, and other element vertical bipolar transistor
11/25/1993DE4216684A1 Stromspiegel mit wenigstens einem pnp-Transistor Current mirror with at least one pnp transistor
11/24/1993EP0571027A1 Semiconductor device comprising a lateral DMOST with breakdown voltage raising zones and provisions for exchanging charge with the back gate region
11/24/1993EP0570928A1 Method of manufacturing thin film transistor panel
11/24/1993EP0570864A2 Monolithically integrated PNP transistor structure
11/24/1993EP0570595A1 Vertical insulated gate semiconductor device and method for its manufacture
11/24/1993EP0570584A1 Semiconductor device
11/24/1993EP0570447A1 Bipolar transistor feature and process for producing it
11/23/1993US5264724 Silicon nitride for application as the gate dielectric in MOS devices
11/23/1993US5264722 Nanochannel glass matrix used in making mesoscopic structures
11/23/1993US5264721 Insulated-gate FET on an SOI-structure
11/23/1993US5264719 High voltage lateral semiconductor device
11/23/1993US5264717 HACT structure with reduced surface state effects
11/23/1993US5264713 Junction field-effect transistor formed in silicon carbide
11/23/1993US5264711 Metal-encapsulated quantum wire for enhanced charge transport
11/23/1993US5264384 Method of making a non-volatile memory cell
11/23/1993US5264383 Method of manufacturing a thin film transistor
11/23/1993US5264382 Forming dummy gate on semiconductor substrate, forming metal electrodes, masking, etching, forming dielectric film, etching
11/23/1993US5264381 Method of manufacturing a static induction type switching device
11/23/1993US5264380 Method of making an MOS transistor having improved transconductance and short channel characteristics
11/23/1993US5264379 Band gaps; mesa structure; sulfide passivation; forming insulating film
11/23/1993US5264378 Depositing diffusion protecting film over first surface of wafer, forming apertures, doping, grinding second surface, poishing, attaching emitter electrode
11/22/1993CA2096479A1 Semiconductor device comprising a lateral dmost with breakdown voltage raising zones and provisions for exchanging charge with the back gate region
11/18/1993EP0570257A1 Field effect semiconductor device with secondary gate, process of realisation and application in a matrix driving device
11/18/1993EP0570224A2 Semiconductor device
11/18/1993EP0570205A1 A method for producing metal wirings on an insulating substrate
11/18/1993EP0570090A1 Image sensor and manufacturing method thereof
11/18/1993EP0570043A2 Bicmos SOI wafer having thin and thick SOI regions of silicon
11/18/1993EP0569899A1 An overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same
11/18/1993EP0569840A1 Quantum element
11/18/1993EP0569745A1 Method of manufacturing a field effect transistor with asymmetrical gate structure
11/18/1993EP0569470A1 Polysilicon thin film transistor
11/18/1993DE4216030A1 Elektronisches Bauelement mit wenigstens einem Stromkanal, der ein zweidimensionales Ladungsträgergas enthält Electronic component with at least one flow channel, which contains a two-dimensional charge carrier gas
11/16/1993US5262987 Floating gate semiconductor nonvolatile memory having impurity doped regions for low voltage operation
11/16/1993US5262985 Nonvolatile semiconductor memory device
1 ... 1997 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 ... 2182