| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/09/1996 | US5482173 Manufacturing method of forming a passivation layer in a liquid crystal display device |
| 01/04/1996 | WO1996000494A1 Vertical interconnect process for silicon segments |
| 01/04/1996 | WO1996000452A2 Charge coupled device, and imaging device comprising such a charge coupled device |
| 01/04/1996 | WO1995031830A3 A semiconductor heterostructure having a ii-vi compound in ohmic contact with a p-type gaas substrate |
| 01/04/1996 | DE19524027A1 Semiconductor device |
| 01/04/1996 | DE19517002A1 Semiconductor field effect transistor for SRAM or DRAM |
| 01/03/1996 | EP0690514A2 SOI transistor having a self-aligned body contact |
| 01/03/1996 | EP0690513A2 Step-cut insulated gate static induction transistors and method of manufacturing the same |
| 01/03/1996 | EP0690512A1 Insulated gate bipolar transistor and method for fabricating the same |
| 01/03/1996 | EP0690511A1 Compound semiconductor device and its manufacturing method |
| 01/03/1996 | EP0690508A2 Buried layer in a memory array |
| 01/03/1996 | EP0690506A1 Method of fabrication of a semiconductor device comprising at least two field-effect transistors having a different pinch-off voltage |
| 01/03/1996 | EP0690491A1 Simplified contact method for high density CMOS |
| 01/03/1996 | EP0690487A1 Methods for forming oxide films |
| 01/03/1996 | EP0690311A2 Reliability test method for semiconductor trench devices |
| 01/03/1996 | EP0689721A1 Direct multilevel thin-film transistor production method |
| 01/03/1996 | EP0689720A1 A technique for making memory cells in a way which suppresses electrically conductive stringers |
| 01/03/1996 | EP0689719A1 Semiconductor structure, and method of manufacturing same |
| 01/02/1996 | US5481511 Address table editing system for voice data recorded in an optical disk |
| 01/02/1996 | US5481490 Ferroelectric memory |
| 01/02/1996 | US5481485 Effective channel length simulation using a single sample transistor |
| 01/02/1996 | US5481184 Movement actuator/sensor systems |
| 01/02/1996 | US5481132 Transistor with a predetermined current gain in a bipolar integrated circuit |
| 01/02/1996 | US5481128 Structure for flash memory cell |
| 01/02/1996 | US5481126 Semiconductor-on-insulator electronic devices having trench isolated monocrystalline active regions |
| 01/02/1996 | US5481125 Compact CMOS analog crosspoint switch matrix |
| 01/02/1996 | US5481121 Semiconductor device having improved crystal orientation |
| 01/02/1996 | US5481120 Heterojunction bipolar transistors |
| 01/02/1996 | US5480838 Method of manufacturing a semiconductor device having vertical transistor with tubular double-gate |
| 01/02/1996 | US5480833 Semiconductor device having an isolation region enriched in oxygen and a fabrication process thereof |
| 01/02/1996 | US5480829 Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts |
| 01/02/1996 | US5480826 Method of manufacturing semiconductor device having a capacitor |
| 01/02/1996 | US5480821 Method of fabricating source-coupling, split-gate, virtual ground flash EEPROM array |
| 01/02/1996 | US5480818 Method for forming a film and method for manufacturing a thin film transistor |
| 01/02/1996 | US5480816 Method of fabricating a bipolar transistor having a link base |
| 01/02/1996 | CA2034075C Self-aligning contact and interconnect structure |
| 12/28/1995 | WO1995035581A2 Non-volatile sidewall memory cell method of fabricating same |
| 12/27/1995 | EP0689252A1 Semiconductor device |
| 12/27/1995 | EP0689251A1 Quick power diode |
| 12/27/1995 | EP0689250A1 Semiconductor element with a triangular barrier diode structure |
| 12/27/1995 | EP0689239A1 Manufacturing process for MOS-technology power devices |
| 12/27/1995 | EP0689238A1 MOS-technology power device manufacturing process |
| 12/27/1995 | EP0689237A1 Method of forming metal silicide films on source and drain regions |
| 12/27/1995 | EP0689234A1 Polish planarizing using oxidized boron nitride as a polish stop |
| 12/27/1995 | EP0689086A2 Display unit |
| 12/27/1995 | EP0411088B1 Formation of microstructures with removal of liquid by freezing and sublimation |
| 12/27/1995 | CN1030593C Nonvolatile memory and method of manufacturing thereof |
| 12/26/1995 | US5479577 Neural device |
| 12/26/1995 | US5479368 Spacer flash cell device with vertically oriented floating gate |
| 12/26/1995 | US5479367 N-channel single polysilicon level EPROM cell |
| 12/26/1995 | US5479316 Integrated circuit metal-oxide-metal capacitor and method of making same |
| 12/26/1995 | US5479052 Contact structure with capacitor for group III-V semiconductor devices |
| 12/26/1995 | US5479047 Self-aligned bipolar transistor with very thin dielectric layer interfacing between poly and active area |
| 12/26/1995 | US5479046 Monolithically integrated semiconductor arrangement with a cover electrode |
| 12/26/1995 | US5479042 Micromachined relay and method of forming the relay |
| 12/26/1995 | US5479037 Low threshold voltage epitaxial DMOS technology |
| 12/26/1995 | US5479033 Complementary junction heterostructure field-effect transistor |
| 12/26/1995 | US5479031 Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value |
| 12/26/1995 | US5479030 Compound semiconductor device and electric power converting apparatus using such device |
| 12/26/1995 | US5479028 III-V system compound semiconductor device and method for manufacturing the semiconductor device |
| 12/26/1995 | US5479027 Semiconductor device having a channel for a zero-or one-dimensional carrier gas |
| 12/26/1995 | US5478971 Metallic circuit board and thin film diode array and method of manufacturing the same |
| 12/26/1995 | US5478782 Method bonding for production of SOI transistor device |
| 12/26/1995 | US5478765 In situ nitriding to form silicon nitride film on substrate, chemical vapor depositing second nitride film, forming oxynitride film on second nitride film by heating in presence of nitrous oxide |
| 12/26/1995 | US5478764 Method of producing semiconductor device including Schottky barrier diode incorporating a CVD refractory metal layer |
| 12/26/1995 | US5478763 High performance field effect transistor and method of manufacture thereof |
| 12/26/1995 | US5478760 Process for fabricating a vertical bipolar junction transistor |
| 12/26/1995 | US5478653 A heterostructure comprising a layer silicon epitaxially deposited on a layer of perovskite which covering a glassy layer amorphore silicon dioxide |
| 12/26/1995 | US5477729 Acoustic emission transducer |
| 12/21/1995 | WO1995034916A1 Manufacture of thin film semiconductor device, thin film semiconductor device, liquid crystal display device, and electronic device |
| 12/21/1995 | WO1995034915A1 Semiconductor device in silicon carbide |
| 12/21/1995 | WO1995034914A1 High temperature, high holding current semiconductor thyristor |
| 12/21/1995 | WO1995034913A1 Bootstrapped-gate field effect transistors and circuits thereof |
| 12/21/1995 | WO1995034912A1 Force detecting sensor and method of making |
| 12/21/1995 | WO1995034904A1 Micromechanical memory sensor |
| 12/21/1995 | CA2192440A1 Micromechanical memory sensor |
| 12/20/1995 | EP0688079A2 Integrated circuit protection apparatus and method |
| 12/20/1995 | EP0688044A2 III-V Semiconductor structure and method of manufacture |
| 12/20/1995 | EP0687384A1 A quantum well device |
| 12/20/1995 | CN1113610A Semiconductor memory device provided with capacitors formed above and below a cell transistor, and method for manufacturing the same |
| 12/20/1995 | CN1113609A Unit of Semiconductor IC |
| 12/20/1995 | CN1113606A III-V semiconductor structure and method of manufacture |
| 12/19/1995 | US5477357 Liquid crystal display device having a management symbol pattern formed on a substrate |
| 12/19/1995 | US5477355 Process for producing the passivation layer of an active matrix substrate by back exposure |
| 12/19/1995 | US5477169 Logic circuit with negative differential resistance device |
| 12/19/1995 | US5477078 Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage |
| 12/19/1995 | US5477077 Semiconductor device and a method for the manufacture thereof |
| 12/19/1995 | US5477073 Thin film semiconductor device including a driver and a matrix circuit |
| 12/19/1995 | US5477072 Nonvolatile semiconductor memory device |
| 12/19/1995 | US5477071 MOS random access memory having array of trench type one-capacitor/one-transistor memory cells |
| 12/19/1995 | US5477070 Drive transistor for CCD-type image sensor |
| 12/19/1995 | US5477069 Charge transfer device and driving method for the same |
| 12/19/1995 | US5477068 Nonvolatile semiconductor memory device |
| 12/19/1995 | US5477066 Heterojunction bipolar transistor |
| 12/19/1995 | US5477065 Lateral thin film thyristor with bevel |
| 12/19/1995 | US5477064 Thyristor |
| 12/19/1995 | US5477060 Infrared hot electron transistor with a superlattice base |
| 12/19/1995 | US5476819 Substrate anchor for undercut silicon on insulator microstructures |
| 12/19/1995 | US5476813 Method of manufacturing a bonded semiconductor substrate and a dielectric isolated bipolar transistor |
| 12/19/1995 | US5476812 Forming p-type diamond layer by microwave plasma chemical vapor deposition on n-type cubic boron nitride substrate made by high pressure synthesis, forming gold/silicon electrode on back surface of substrate, titanium electrode on diamond layer |