| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/10/1996 | EP0706204A2 Method for forming a dielectric having improved performance |
| 04/10/1996 | EP0706202A2 Method for producing a pattern and a semiconductor device |
| 04/10/1996 | EP0705921A2 Method and apparatus for zone-melting recrystallization of semiconductor layer |
| 04/10/1996 | EP0332658B1 Enhanced density modified isoplanar process |
| 04/10/1996 | CN1120243A Semiconductor intefgrated circuit device |
| 04/10/1996 | CN1120240A Semiconductor device and method for producing the same |
| 04/09/1996 | US5506753 Method and apparatus for a stress relieved electronic module |
| 04/09/1996 | US5506748 Capacitor for semiconductor integrated circuit |
| 04/09/1996 | US5506539 IGFET power semiconductor circuit with GAE control and fault detection circuits |
| 04/09/1996 | US5506442 Variable-capacitance device and semiconductor integrated circuit device having such variable-capacitance device |
| 04/09/1996 | US5506439 Bipolar transistor with temperature detecting terminal |
| 04/09/1996 | US5506436 Semiconductor memory cell |
| 04/09/1996 | US5506435 For a memory cell |
| 04/09/1996 | US5506433 High speed; miniaturization |
| 04/09/1996 | US5506432 Metal nitride oxide semiconductor device |
| 04/09/1996 | US5506431 Double poly trenched channel accelerated tunneling electron (DPT-CATE) cell, for memory applications |
| 04/09/1996 | US5506427 Heterojunction bipolar transistor with silicon-germanium base |
| 04/09/1996 | US5506425 Semiconductor device and lead frame combination |
| 04/09/1996 | US5506422 MOIS junction for use in a diamond electronic device |
| 04/09/1996 | US5506421 Power MOSFET in silicon carbide |
| 04/09/1996 | US5506383 Wafer scale multi-chip module |
| 04/09/1996 | US5506178 Process for forming gate silicon oxide film for MOS transistors |
| 04/09/1996 | US5506172 Semiconductor processing method of forming an electrical interconnection between an outer layer and an inner layer |
| 04/09/1996 | US5506165 Method of manufacturing liquid-crystal display panel |
| 04/09/1996 | US5506161 Method of manufacturing graded channels underneath the gate electrode extensions |
| 04/09/1996 | US5506159 Method for manufacturing a semiconductor memory device |
| 04/09/1996 | US5506157 Method for fabricating pillar bipolar transistor |
| 04/09/1996 | US5506156 Method of fabricating bipolar transistor having high speed and MOS transistor having small size |
| 04/09/1996 | US5506153 Method for manufacture of a controllable power semiconductor element with buffer zone |
| 04/09/1996 | US5505996 Spreading a dispersion medium containing specific size particles of polymers, inorganic metal, alloys or oxides to a clean surface of high density substarte forming thin film by physical absorption or adhsion |
| 04/04/1996 | WO1996010267A1 High voltage lateral dmos device with enhanced drift region |
| 04/04/1996 | WO1996010266A1 Fixed value storage cell arrangement and method of producing the same |
| 04/04/1996 | DE19536495A1 Lateral field effect transistor with thick oxide layer LOCOS |
| 04/03/1996 | EP0704973A2 Electrical circuit protection arrangement and method |
| 04/03/1996 | EP0704910A2 A thin-film transistor and method for forming the same |
| 04/03/1996 | EP0704909A2 MOS-type semiconductor device and method for making the same |
| 04/03/1996 | EP0704908A2 Self turnoff type semiconductor device |
| 04/03/1996 | EP0704907A2 Bipolar transistor with a base layer having an extremely low resistance and method for fabricating the same |
| 04/03/1996 | EP0704906A2 Electrode of semiconductor device and method of fabricating thereof |
| 04/03/1996 | EP0704905A2 Silicon semiconductor device with junction breakdown prevention |
| 04/03/1996 | EP0704903A1 Semiconductor component for the supply, recirculation and demagnetisation of an inductive load |
| 04/03/1996 | EP0704902A1 Power semiconductor device with monolithically integrated sense device, its method of fabrication and its application |
| 04/03/1996 | EP0704893A2 Improved device planarity |
| 04/03/1996 | EP0704890A2 A method of evaluating a mis-type semiconductor device |
| 04/03/1996 | EP0704889A2 Power semiconductors with monolithically integrated test resistor and its fabrication |
| 04/03/1996 | EP0704882A2 Formation of closely spaced metal electrodes in a semiconductor device |
| 04/03/1996 | EP0704852A2 Novolatile semiconductor memory cell capable of saving overwritten cell and its saving method |
| 04/03/1996 | EP0704851A1 Byte erasable EEPROM fully compatible with a single power supply flash-EPROM process |
| 04/03/1996 | EP0704741A2 Optoelectronic devices utilizing multiple quantum well pin structures and a process for fabricating the same |
| 04/03/1996 | EP0704108A1 Metal-semiconductor diode and methods for producing metal semiconductor diodes |
| 04/03/1996 | CN1119790A Crystalline silicon film, and semiconductor device and method for producing the same |
| 04/03/1996 | CN1119789A Semiconductor circuit for electro-optical device and method of manufacturing the same |
| 04/03/1996 | CN1119788A Method and apparatus for a stress relieved electronic module |
| 04/02/1996 | US5504708 Flash EEPROM array with P-tank insulated from substrate by deep N-tank |
| 04/02/1996 | US5504706 Low voltage Fowler-Nordheim flash EEPROM memory array utilizing single level poly cells |
| 04/02/1996 | US5504705 Semiconductor memory device |
| 04/02/1996 | US5504450 High voltage components for EEPROM system |
| 04/02/1996 | US5504376 Stacked-type semiconductor device |
| 04/02/1996 | US5504363 Integrated circuit |
| 04/02/1996 | US5504360 Vertical type semiconductor device provided with an improved construction to greatly decrease device on-resistance without impairing breakdown |
| 04/02/1996 | US5504359 Vertical FET device with low gate to source overlap capacitance |
| 04/02/1996 | US5504358 On a semiconductor substrate |
| 04/02/1996 | US5504353 Having double-recess structure which is precisely etched and stably fabricated |
| 04/02/1996 | US5504352 Semiconductor MESFET device with edge portion |
| 04/02/1996 | US5504351 Insulated gate semiconductor device |
| 04/02/1996 | US5504347 Lateral resonant tunneling device having gate electrode aligned with tunneling barriers |
| 04/02/1996 | US5504041 Conductive exotic-nitride barrier layer for high-dielectric-constant materials |
| 04/02/1996 | US5504039 Method for making a self-aligned oxide gate cap |
| 04/02/1996 | US5504036 Method of manufacturing semiconductor devices with semiconductor elements formed in a layer of semiconductor material provided on a support slice |
| 04/02/1996 | US5504032 Micromechanical accelerometer and method of manufacture thereof |
| 04/02/1996 | US5504028 Method of forming a dynamic random memory device |
| 04/02/1996 | US5504024 Method for fabricating MOS transistors |
| 04/02/1996 | US5504023 Method for fabricating semiconductor devices with localized pocket implantation |
| 04/02/1996 | US5504022 Method of making a semiconductor memory device having a floating gate |
| 04/02/1996 | US5504020 Method for fabricating thin film transistor |
| 04/02/1996 | US5504019 Method for fabricating a thin film semiconductor |
| 04/02/1996 | US5504018 Process of fabricating bipolar transistor having epitaxially grown base layer without deterioration of transistor characteristics |
| 04/02/1996 | US5503731 Second pair of electrodes to collect impurities; applying voltage so that at least one wiring line receives voltage for a different period of time than the others |
| 04/02/1996 | US5503285 Method for forming an electrostatically force balanced silicon accelerometer |
| 04/02/1996 | US5503017 Semiconductor acceleration sensor |
| 04/02/1996 | US5503016 Transducer assembly |
| 04/02/1996 | CA2058672C Semiconductor device for improving high-frequency characteristics and avoiding chip cracking |
| 03/28/1996 | WO1996009649A1 Controllable semiconductor component |
| 03/28/1996 | DE4433796A1 Steuerbares Halbleiterbauelement Controllable semiconductor component |
| 03/28/1996 | DE4433689A1 Large-area chip configuration with cavities in plastics package |
| 03/28/1996 | DE19535783A1 Lateral semiconductor and operational arrangement |
| 03/28/1996 | DE19535140A1 Lateral MOSFET with high withstand voltage |
| 03/28/1996 | DE19533956A1 Solid state power switching device |
| 03/28/1996 | DE19531058A1 Semiconductor acceleration sensor for e.g. pressure sensor with integrated computer chip |
| 03/27/1996 | EP0703629A2 Vertical power field effect transistor |
| 03/27/1996 | EP0703628A2 Enhanced mobility MOSFET device and method |
| 03/27/1996 | EP0703627A1 Semiconductor device with field plate and power converter using same |
| 03/27/1996 | EP0703626A2 Resonant tunneling structure and fabrication methods |
| 03/27/1996 | EP0703625A2 Deep trench DRAM process on SOI for low leakage DRAM cell |
| 03/27/1996 | EP0703620A1 Circuit for preventing turn-on of parasitic components in integrated circuits including a power stage and low-voltage control circuitry |
| 03/27/1996 | EP0703607A2 Bipolar transistor and method for manufacturing the same |
| 03/27/1996 | EP0702852A1 Manufacture of electronic devices comprising thin-film transistors |
| 03/27/1996 | EP0702851A1 Laterally graded emitter for bipolar transistor |
| 03/27/1996 | EP0702796A1 Microelectromechanical lateral accelerometer |
| 03/27/1996 | CN1119348A Transistor and method for fabricating the same |