| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/20/1996 | US5493139 Electrically erasable PROM (E2 PROM) with thin film peripheral transistor |
| 02/20/1996 | US5493138 Improved tunneling dual layer of inner oxynitride and outer silica |
| 02/20/1996 | US5493137 Semiconductor device |
| 02/20/1996 | US5493136 Field effect transistor and method of manufacturing the same |
| 02/20/1996 | US5493134 Bidirectional AC switching device with MOS-gated turn-on and turn-off control |
| 02/20/1996 | US5493131 Diamond rectifying element |
| 02/20/1996 | US5493130 Integrated circuitry having an electrically conductive sidewall link positioned over and electrically interconnecting respective outer sidewalls of two conductive layers |
| 02/20/1996 | US5493129 Thin film transistor structure having increased on-current |
| 02/20/1996 | US5492857 High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| 02/20/1996 | US5492847 Counter-implantation method of manufacturing a semiconductor device with self-aligned anti-punchthrough pockets |
| 02/20/1996 | US5492846 Fabrication method of nonvolatile semiconductor memory device |
| 02/20/1996 | US5492845 Method of producing MOS devices |
| 02/20/1996 | US5492844 Method of manufacturing increased conductivity base contact/feeders with self-aligned structures |
| 02/15/1996 | WO1996004685A1 A power semiconductor device |
| 02/15/1996 | WO1996004679A1 Counter-implantation method of manufacturing a semiconductor device with self-aligned anti-punchthrough pockets |
| 02/15/1996 | WO1996000452A3 Charge coupled device, and imaging device comprising such a charge coupled device |
| 02/15/1996 | DE19528998A1 Bidirectional semiconductor switch |
| 02/14/1996 | CN2220123Y Bigrid transistor |
| 02/14/1996 | CN1116774A Combined thyratron transistor |
| 02/14/1996 | CN1116773A Semiconductor integrated circuit and manufacturing method therefor |
| 02/13/1996 | US5491571 Liquid crystal display including electrodes and driver devices integrally formed in monocrystalline semiconductor layer |
| 02/13/1996 | US5491357 Integrated structure current sensing resistor for power MOS devices, particularly for overload self-protected power MOS devices |
| 02/13/1996 | US5491355 Self-aligned contact formation |
| 02/13/1996 | US5491354 Floating gate charge detection node |
| 02/13/1996 | US5491351 Turn-off power semiconductor component |
| 02/13/1996 | US5491348 Highly-oriented diamond film field-effect transistor |
| 02/13/1996 | US5491105 LDMOS transistor with self-aligned source/backgate and photo-aligned gate |
| 02/13/1996 | US5491100 Method for manufacturing a semiconductor device having a contact window structure |
| 02/13/1996 | US5491099 Method of making silicided LDD with recess in semiconductor substrate |
| 02/13/1996 | US5490421 Semi-conductor acceleration sensor having thin beam supported weight |
| 02/08/1996 | WO1996003774A1 Semiconductor component with a high blocking capability edge termination |
| 02/08/1996 | WO1996003770A1 Semiconductor device with integrated rc network and schottky diode |
| 02/08/1996 | WO1995035581A3 Non-volatile sidewall memory cell method of fabricating same |
| 02/08/1996 | DE19507816A1 Semiconductor device having high reliability |
| 02/08/1996 | CA2196206A1 Semiconductor device with integrated rc network and schottky diode |
| 02/07/1996 | EP0696066A2 Semiconductor switching device and power converter |
| 02/07/1996 | EP0696065A2 Conduction control device |
| 02/07/1996 | EP0696062A2 CMOS semiconductor device and manufacturing method thereof |
| 02/07/1996 | EP0696054A1 Process for the manufacturing of high-density MOS-technology power devices |
| 02/07/1996 | EP0696053A1 Method of manufacturing recessed channel field effect transistor |
| 02/07/1996 | EP0696051A1 Method for fabricating oxide layer in semiconductor technology |
| 02/07/1996 | EP0696050A1 EPROM and Flash-EEPROM non-volatile memory and method of manufacturing the same |
| 02/07/1996 | EP0695927A2 Sensing transducer using a Schottky junction and having an increased output signal voltage |
| 02/07/1996 | EP0695463A1 Electromigration resistant metallization structures for microcircuit interconnections with rf-reactively sputtered titanium tungsten and gold |
| 02/07/1996 | CN1116364A Improved method of making thin-film electronic crystal |
| 02/06/1996 | US5490095 Method of extracting parameters for circuit simulation |
| 02/06/1996 | US5489802 Pressure contact type semiconductor device and heat compensator |
| 02/06/1996 | US5489799 Integrated edge structure for high voltage semiconductor devices and related manufacturing processs |
| 02/06/1996 | US5489792 In a semiconductor material layer |
| 02/06/1996 | US5489791 Field effect transistor having impurity regions of different depths and manufacturing method thereof |
| 02/06/1996 | US5489789 Semiconductor device |
| 02/06/1996 | US5489788 Insulated gate semiconductor device with improved short-circuit tolerance |
| 02/06/1996 | US5489787 Semiconductor device having an insulated gate field effect transistor and exhibiting thyristor action |
| 02/06/1996 | US5489786 Current-controlled resonant tunneling device |
| 02/06/1996 | US5489785 Band-to-band resonant tunneling transistor |
| 02/06/1996 | US5489549 Method of fabricating n-type antimony-based strained layer superlattice |
| 02/06/1996 | US5489548 Forming supporting, adhesion, unreactive layers, vapor depositing conformal layer, anisotropically etching conformal layer to form conductive sidewall, depositing high dielectric constant material layer, finally electrode |
| 02/06/1996 | US5489545 Method of manufacturing an integrated circuit having a charge coupled device and a MOS transistor |
| 02/06/1996 | US5489544 Method for making a high capacitance multi-level storage node for high density TFT load SRAMS with low soft error rates |
| 02/06/1996 | US5489543 Method of forming a MOS device having a localized anti-punchthrough region |
| 02/06/1996 | US5489542 Method for fabricating semiconductor device in which threshold voltage shift and charge-pumping current are improved |
| 02/06/1996 | US5489539 Method of making quantum well structure with self-aligned gate |
| 02/06/1996 | US5488869 Capacitive absolute pressure measurement sensor and method of manufacturing a plurality of such sensors |
| 02/01/1996 | WO1996002964A2 A transferred electron effect device |
| 02/01/1996 | WO1996002946A1 High-frequency traveling wave field-effect transistor |
| 02/01/1996 | WO1996002940A1 Device reliability of mos devices using silicon rich plasma oxide films |
| 02/01/1996 | WO1995031833A3 Semiconductor device provided with an organic semiconductor material |
| 02/01/1996 | DE4438640C1 Double-sided power semiconductor device |
| 02/01/1996 | DE4426307A1 Integrated circuit with gate oxide and ESD protection for DMOS transistor |
| 01/31/1996 | EP0694977A2 SOI-type semiconductor device with suppressed spread of depletion region |
| 01/31/1996 | EP0694976A2 Method of manufacturing an integrated circuit having p-MOSFETs with different channel widths |
| 01/31/1996 | EP0694971A2 Semiconductor integrated circuit device and electronic apparatus in use thereof |
| 01/31/1996 | EP0694964A2 Semiconductor device and package structure therefor and power inverter having semiconductor device |
| 01/31/1996 | EP0694962A2 Prevention of agglomeration and inversion in a semiconductor polycide process |
| 01/31/1996 | EP0694960A1 Process for the localized reduction of the lifetime of charge carriers |
| 01/31/1996 | EP0694086A1 Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits |
| 01/31/1996 | CN1115911A Eeprom cell with isolation transistor and methods for making and operating the same |
| 01/31/1996 | CN1115909A High voltage-resisting surface structure for high-voltage device |
| 01/30/1996 | US5488252 Layout for radio frequency power transistors |
| 01/30/1996 | US5488250 Hall effect modulation of resistor values |
| 01/30/1996 | US5488245 Semiconductor memory device capable of electrically erasing and writing information |
| 01/30/1996 | US5488244 Electrically erasable and programmable read only memory cell |
| 01/30/1996 | US5488243 SOI MOSFET with floating gate |
| 01/30/1996 | US5488241 Integrated device combining a bipolar transistor and a field effect transistor |
| 01/30/1996 | US5488237 Semiconductor device with delta-doped layer in channel region |
| 01/30/1996 | US5488236 Latch-up resistant bipolar transistor with trench IGFET and buried collector |
| 01/30/1996 | US5488231 Metal/semiconductor junction Schottky diode optical device using a distortion grown layer |
| 01/30/1996 | US5488005 Process for manufacturing an offset gate structure thin film transistor |
| 01/30/1996 | US5488003 Method of making emitter trench BiCMOS using integrated dual layer emitter mask |
| 01/30/1996 | US5488002 Method for manufacturing self-aligned bipolar transistors using double diffusion |
| 01/30/1996 | US5488001 Manufacture of electronic devices comprising thin-film transistors using an ion implantation mask having bevelled edges |
| 01/30/1996 | US5487811 Process for preparation of semiconductor device |
| 01/30/1996 | CA2066002C Fabrication of quantum devices in compound semiconductor layers and resulting structures |
| 01/25/1996 | WO1996001836A1 Self-addressable self-assembling microelectronic systems and devices for molecular biological analysis and diagnostics |
| 01/25/1996 | DE4425337A1 Semiconductor circuit appts. for high power and high frequency module |
| 01/24/1996 | EP0693773A1 VDMOS power device and manufacturing process thereof |
| 01/24/1996 | EP0693672A1 Length or angle measuring device |
| 01/24/1996 | EP0693224A1 Layered system with an electrically activatable layer |
| 01/24/1996 | EP0693222A1 Method of manufacturing a silicon carbide field effect transistor |
| 01/24/1996 | CN1115499A Semiconductor device and method for manufacturing the same |