Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1995
12/19/1995US5476810 Manufacture of electronic devices comprising thin-film circuits using a metal foil as a temporary support
12/19/1995US5476809 Semiconductor device and method of manufacturing the same
12/19/1995US5476802 Method for forming an insulated gate field effect transistor
12/19/1995US5476801 Spacer flash cell process
12/19/1995CA2057123C Semiconductor device and method of making it
12/14/1995WO1995034095A1 Low resistance, stable ohmic contacts to silicon carbide, and method of making the same
12/14/1995WO1995034094A1 Trenched dmos transistor with channel block at cell trench corners
12/14/1995DE19521142A1 Integrierte Halbleiterschaltkreisstruktur und Verfahren zur Herstellung von dieser A semiconductor integrated circuit structure and procedures for producing these
12/14/1995DE19520785A1 Thyristor with insulated gate for gate turn off transistor, power switching device
12/14/1995DE19520782A1 Silicon carbide semiconductor device
12/14/1995DE19516339A1 Method of manufacturing semiconductor device having low-resistance gate electrode
12/13/1995EP0687068A2 Output driver for use in semiconductor integrated circuit
12/13/1995EP0687051A1 Telephone line interface protection
12/13/1995EP0687016A1 Junction field effect transistor and method of producing the same
12/13/1995EP0687015A2 Semiconductor device and method of manufacturing the same
12/13/1995EP0687014A2 Pressure contact type semiconductor device, preferably of the light triggered type
12/13/1995EP0687013A1 Bipolar transistor and method of manufacturing the same
12/13/1995EP0687012A2 Shorted anode structure for asymmetric thyristors
12/13/1995EP0687011A1 Planar semiconductor device with capacitively coupled field plates
12/13/1995EP0687002A2 Producing method of SOI semiconductor device
12/13/1995EP0686308A1 High saturation current, low leakage current fermi threshold field effect transistor
12/13/1995EP0686307A1 Refractory metal contact for a power device
12/13/1995EP0686305A1 Fabrication process for cmos device with jfet
12/13/1995EP0392895B1 Flash EEprom system
12/12/1995US5475634 Floating gate memory array with latches having improved immunity to write disturbance, and with storage latches
12/12/1995US5475514 Transferred single crystal arrayed devices including a light shield for projection displays
12/12/1995US5475341 Sub-nanoscale electronic systems and devices
12/12/1995US5475340 Active biasing circuit for an epitaxial region in a fault-tolerant, vertical pnp output transistor
12/12/1995US5475335 High voltage cascaded charge pump
12/12/1995US5475273 Smart power integrated circuit with dynamic isolation
12/12/1995US5475258 Power semiconductor device with protective element
12/12/1995US5475257 Semiconductor device having an improved low resistive contact
12/12/1995US5475252 Semiconductor device
12/12/1995US5475251 Secure non-volatile memory cell
12/12/1995US5475245 Field-effect voltage regulator diode
12/12/1995US5475244 MIS transistor having second conductivity type source and drain regions sandwiching a channel region of a first conductivity type of a first semiconductor material formed on an insulating substrate, and a gate electrode formed on a main surface
12/12/1995US5475243 Semiconductor device including an IGBT and a current-regenerative diode
12/12/1995US5475238 Thin film transistor with a sub-gate structure and a drain offset region
12/12/1995US5474946 Reduced mask process for manufacture of MOS gated devices
12/12/1995US5474945 Method for forming semiconductor device comprising metal oxide
12/12/1995US5474944 Process for manufacturing integrated circuit with power field effect transistors
12/12/1995US5474943 Method for fabricating a short channel trenched DMOS transistor
12/12/1995US5474942 Method of forming a liquid crystal display device
12/12/1995US5474941 Method for producing an active matrix substrate
12/12/1995US5474940 Method of fabricating a semiconductor device having shallow junctions in source-drain regions and a gate electrode with a low resistance silicide layer
12/07/1995WO1995033282A1 Substrate anchor for undercut silicon on insulator microstructures
12/07/1995WO1995033281A1 Vertically stacked bipolar semiconductor structure
12/07/1995WO1995033225A1 Large aperture ratio array architecture for active matrix liquid crystal displays
12/07/1995DE19520046A1 Planar, ion-implanted GaAs-MESFET device for microwave application
12/07/1995DE19520004A1 Motor vehicle accelerometer with piezo-resistive bridge elements
12/07/1995DE19519860A1 Halbleitervorrichtung, ein Herstellungsverfahren für diese, eine Einzelelektronenvorrichtung und ein Herstellungsverfahren für diese Semiconductor device, a manufacturing method for these, a single-electron device and a manufacturing method for this
12/07/1995CA2190614A1 Substrate anchor for undercut silicon on insulator microstructures
12/07/1995CA2189661A1 Large aperture ratio array architecture for active matrix liquid crystal displays
12/06/1995EP0685921A1 Capacitive charge pump, Bicmos circuit for low supply voltage
12/06/1995EP0685891A1 Integrated semiconductor diode
12/06/1995EP0685890A1 Semiconductor device having a MOS gate structure and a surface protective film and method of fabricating the same
12/06/1995EP0685889A2 Reverse conducting GTO thyristor and manufacturing method for the same
12/06/1995EP0685888A2 Integrated semiconductor device
12/06/1995EP0685883A2 Method of forming an improved dielectric in an integrated circuit
12/06/1995EP0685852A2 Memory system and method of using same
12/06/1995EP0685757A2 Liquid crystal display apparatus
12/06/1995EP0685125A1 Cross-conduction prevention circuit for power amplifier output stage
12/06/1995EP0685116A1 Drift-free avalanche diode
12/06/1995EP0685115A1 Semiconductor device comprising deuterium atoms
12/06/1995CN1113032A Method of manufacturing a semiconductor device
12/06/1995CN1113008A Semiconductor accelerometer having reduced sensor plate flexure
12/05/1995USRE35111 Local interconnect process for integrated circuits
12/05/1995US5473570 Semiconductor memory device having an improved sense amplifier arrangement
12/05/1995US5473563 Nonvolatile semiconductor memory
12/05/1995US5473513 Photosensitive array wherein chips are not thermally matched to the substrate
12/05/1995US5473451 Active matrix liquid crystal displays having diodes connected between second transistors and second data buses
12/05/1995US5473260 Method and circuit arrangement for measuring the depletion layer temperature of a GTO thyristor
12/05/1995US5473253 Semiconductor sensor apparatus
12/05/1995US5473184 Semiconductor device and method for fabricating same
12/05/1995US5473181 Integrated circuit arrangement having at least one power component and low-voltage components
12/05/1995US5473180 Semiconductor device with an MOST provided with an extended drain region for high voltages
12/05/1995US5473179 Method for improving erase characteristics and coupling ratios of buried bit line flash EPROM devices
12/05/1995US5473177 Field effect transistor having a spacer layer with different material and different high frequency characteristics than an electrode supply layer thereon
12/05/1995US5473176 Vertical insulated gate transistor and method of manufacture
12/05/1995US5473175 High electron mobility field effect semiconductor device
12/05/1995US5473174 Reduced stress due to recesses in buffer layer
12/05/1995US5473172 Hetero junction bipolar transistor
12/05/1995US5473171 High-dielectric constant oxides on semiconductors using a Ge buffer layer
12/05/1995US5473170 Semiconductor protection component
12/05/1995US5473168 Thin film transistor
12/05/1995US5472916 Method for manufacturing tunnel-effect sensors
12/05/1995US5472897 Method for fabricating MOS device with reduced anti-punchthrough region
12/05/1995US5472895 Method for manufacturing a transistor of a semiconductor device
12/05/1995US5472894 Method of fabricating lightly doped drain transistor device
12/05/1995US5472893 Method of making a floating gate memory device
12/05/1995US5472892 Method of making a non-volatile floating gate memory device with peripheral transistor
12/05/1995US5472891 Method of manufacturing a semiconductor device
12/05/1995US5472890 Method for fabricating an insulating gate field effect transistor
12/05/1995US5472889 Three layer gate structure of chromium, copper, chromium; arranging in form of matrix, bonding with epoxy resin on glass substrate, filling interface with polyimide and electrically connecting
12/05/1995US5472888 Depletion mode power MOSFET with refractory gate and method of making same
12/05/1995US5472564 Selective etching of silicon; allowing precise control in attaining vertical or taper etching
12/05/1995US5471944 Method for forming crystal article
12/05/1995US5471876 Semiconductor accelerometer
11/1995
11/30/1995WO1995032525A1 BaF2/GaAs ELECTRONIC COMPONENTS
11/30/1995WO1995032524A1 Semiconductor device in silicon carbide with passivated surface
1 ... 1957 1958 1959 1960 1961 1962 1963 1964 1965 1966 1967 1968 1969 1970 1971 1972 1973 1974 1975 1976 1977 ... 2182