Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/1996
03/26/1996US5502673 Non-volatile register system utilizing thin-film floating-gate amorphous transistors
03/26/1996US5502669 Electrically erasable and programmable read only memory device having selectively erasable sectors
03/26/1996US5502668 Semiconductor memory device capable of low-voltage programming
03/26/1996US5502399 Power semiconductor device with a gate withstand-voltage test terminal
03/26/1996US5502336 Semiconductor device and manufacturing method thereof
03/26/1996US5502331 Semiconductor substrate containing bulk micro-defect
03/26/1996US5502330 Stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link
03/26/1996US5502324 Semiconductor memory device
03/26/1996US5502323 Lateral type field effect transistor
03/26/1996US5502322 Transistor having a nonuniform doping channel
03/26/1996US5502321 Flash memory having inclined channel
03/26/1996US5502318 Bipolar gate charge coupled device with clocked virtual phase
03/26/1996US5502003 Depositing tungsten layer before forming nickel electrode; heat treatment; preventing reciprocal diffusion
03/26/1996US5501995 Method for manufacturing a gate electrode of a MOS transistor
03/26/1996US5501994 Extended drain resurf lateral DMOS devices
03/26/1996US5501992 Miniaturization, self-alignment, exceeding limits of photolithographic techniques
03/26/1996US5501991 Keeping base contact regions small, forming emitter region first
03/21/1996WO1996008844A1 Self-aligned field-effect transistor for high frequency applications
03/21/1996WO1996008840A1 A flash eprom transistor array and method for manufacturing the same
03/21/1996WO1996008821A1 Flash eprom integrated circuit architecture
03/21/1996WO1996008701A1 Electromechanical transducer
03/21/1996DE4441903C1 Micromechanical capacitive pressure sensor
03/21/1996DE4433121A1 Modulation-doped FET
03/21/1996DE19534388A1 Insulated gate bipolar transistor module using MOSFET gate PNP switch
03/20/1996EP0702455A2 Overheat protection apparatus for self-turn-off device
03/20/1996EP0702413A2 MES field effect transistor formed in a diamond layer
03/20/1996EP0702412A1 Semiconductor device having high breakdown strength
03/20/1996EP0702411A2 High breakdown voltage semiconductor device with a buried MOS-gate structure
03/20/1996EP0702410A2 A transistor protection circuit
03/20/1996EP0702409A1 Stack of series-connected photosensitive thyristors
03/20/1996EP0702406A2 Press-contact type semiconductor devices
03/20/1996EP0702403A2 Element-isolated hydrogen-terminated diamond semiconductor device and its manufacturing method
03/20/1996EP0702401A2 Method for producing a semiconductor substrate suitable for IGBTs
03/20/1996EP0702398A2 Method of fabricating a semiconductor device using epitaxy
03/20/1996EP0702221A2 One-chip integrated sensor
03/20/1996EP0701737A1 High voltage charge pump using low voltage type transistors
03/20/1996CN1031373C 薄膜晶体管和有源矩阵液晶显示器件 And a thin film transistor active matrix liquid crystal display device
03/19/1996US5500816 Non-volatile semiconductor memory device and manufacturing method thereof
03/19/1996US5500554 Bipolar transistor having reduced base-collector capacitance while maintaining improved cut-off frequency
03/19/1996US5500551 Integrated emitter switching configuration using bipolar transistors
03/19/1996US5500550 Photoelectric converting device
03/19/1996US5500549 Semiconductor yaw rate sensor
03/19/1996US5500548 Integrated circuit device formed on a semiconductor substrate
03/19/1996US5500547 Integrated semiconductor device with temperature sensing circuit and method for operating same
03/19/1996US5500545 Double switching field effect transistor and method of manufacturing it
03/19/1996US5500537 Field-effect transistor with at least two different semiconductive organic channel compounds
03/19/1996US5500522 Gallium arsenide MESFET imager
03/19/1996US5500393 Method for fabricating a schottky junction
03/19/1996US5500391 Method for making a semiconductor device including diffusion control
03/19/1996US5500383 Method for fabricating a CCD image sensor with active transistor pixel
03/19/1996US5500382 Self-aligned contact process
03/19/1996US5500381 Fabrication method of field-effect transistor
03/19/1996US5500380 Method for fabricating thin film transistor
03/19/1996US5500378 Process for forming a bipolar type semiconductor device
03/19/1996US5500377 Method of making surge suppressor switching device
03/19/1996US5500301 Optical recording media
03/19/1996US5500078 8-beam bridge-type silicon acceleration sensor and the fabricating method thereof
03/19/1996US5499526 Semiconductor sensor self-checking circuit
03/14/1996WO1996008041A1 Integrated digital magnetic field detectors
03/14/1996WO1996008040A1 Field effect transistors and method of fabricating same
03/14/1996WO1996008039A1 Structure and fabrication of bipolar transistors with improved output current-voltage characteristics
03/14/1996WO1996008038A1 Fault-protected overvoltage switch with expanded signal range
03/14/1996WO1996007917A1 Automated molecular biological diagnostic system
03/14/1996DE19533754A1 Insulating gate transistor, e.g. MOSFET
03/14/1996DE19533709A1 Non-volatile semiconductor electrically erasable programmable read only memory
03/14/1996DE19533291A1 Encapsulated h.f. semiconductor device contg. FET
03/14/1996DE19533165A1 Non-volatile memory cell prod. process
03/14/1996DE19532343A1 Semiconductor device mfr. for microwave communication
03/14/1996DE19532204A1 Semiconductor heterojunction material eliminating the cause of increased junction electrical resistance
03/13/1996EP0701288A2 Semiconductor device and method of manufacturing the same
03/13/1996EP0701287A2 Bipolar transistor free from leakage current across thin base region and process of fabrication thereof
03/13/1996EP0701272A2 Method of making a semiconductor device
03/13/1996EP0701135A1 Single-wafer tunneling sensor and low-cost IC manufacturing method
03/13/1996EP0700580A1 Method for fabricating suspension members for micromachined sensors
03/13/1996EP0691034A4 Bipolar transistor structure using ballast resistor
03/13/1996EP0561809B1 Monolithic integrated semiconductor device
03/13/1996EP0478577B1 Apparatus and method for a dual thickness dielectric floating gate memory cell
03/13/1996CN1118521A Semiconductor device, method for producing the same, and liquid crystal display including the same
03/13/1996CN1118504A Method for manufacturing a flash eeprom cell
03/12/1996US5499206 Semiconductor optical memory device for optical storage of information with increased recording density
03/12/1996US5499124 Polysilicon transistors formed on an insulation layer which is adjacent to a liquid crystal material
03/12/1996US5498909 Semiconductor device and method of manufacturing such semiconductor device
03/12/1996US5498908 Semiconductor apparatus having an n-channel MOS transistor and a p-channel MOS transistor and method for manufacturing the semiconductor apparatus
03/12/1996US5498904 Polycrystalline semiconductive film, semiconductor device using the same and method of manufacturing the same
03/12/1996US5498899 Spiral resistor integrated on a semiconductor substrate
03/12/1996US5498898 Semiconductor device using element isolation by field shield
03/12/1996US5498894 Semiconductor device
03/12/1996US5498893 Semiconductor device having SOI substrate and fabrication method thereof
03/12/1996US5498892 Field effect transistor
03/12/1996US5498890 Semiconductor device having a multi-layered dielectric structure and manufacturing method thereof
03/12/1996US5498888 Semiconductor device and method for processing multiple input signals
03/12/1996US5498887 Output circuit device for a charge transfer element having tripartite diffusion layer
03/12/1996US5498885 Modulation circuit
03/12/1996US5498884 MOS-controlled thyristor with current saturation characteristics
03/12/1996US5498882 Semiconductor device
03/12/1996US5498577 Method for fabricating thin oxides for a semiconductor technology
03/12/1996US5498572 Contactors
03/12/1996US5498567 Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor
03/12/1996US5498557 Method of making SRAM to improve interface state density utilizing PMOS TFT
03/12/1996US5498556 Metal-oxide-semiconductor field-effect transistor and its method of fabrication
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