Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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01/23/1996 | US5487034 Semiconductor memory device and method for writing data therein |
01/23/1996 | US5486859 Charge-coupled device type solid state imaging device making best use of effective pixels and obtaining images of different two or more kinds of aspect ratios |
01/23/1996 | US5486772 Reliability test method for semiconductor trench devices |
01/23/1996 | US5486718 High voltage planar edge termination structure and method of making same |
01/23/1996 | US5486717 Semiconductor memory device |
01/23/1996 | US5486716 Semiconductor integrated circuit device with electrostatic damage protection |
01/23/1996 | US5486715 High frequency MOS device |
01/23/1996 | US5486713 Semiconductor device having a capacitor |
01/23/1996 | US5486710 Field effect transistor |
01/23/1996 | US5486709 Surge protection device |
01/23/1996 | US5486708 Light valve device using semiconductive composite substrate |
01/23/1996 | US5486706 Quantization functional device utilizing a resonance tunneling effect and method for producing the same |
01/23/1996 | US5486705 Heterojunction field effect transistor |
01/23/1996 | US5486704 Semiconductor device and electronic device by use of the semiconductor |
01/23/1996 | US5486486 Process for the manufacture of an integrated voltage limiter and stabilizer in flash EEPROM memory devices |
01/23/1996 | US5486485 Method of manufacturing a reflective display |
01/23/1996 | US5486484 Lateral power MOSFET structure using silicon carbide |
01/23/1996 | US5486483 Method of forming closely spaced metal electrodes in a semiconductor device |
01/23/1996 | US5486481 Method for forming a lateral bipolar transistor |
01/23/1996 | US5486480 Method of fabrication of protected programmable transistor with reduced parasitic capacitances |
01/23/1996 | US5485753 Piezoresistive silicon pressure sensor implementing long diaphragms with large aspect ratios |
01/18/1996 | WO1996001549A1 Ternary compound film and manufacturing method therefor |
01/18/1996 | WO1996001501A1 Lateral semiconductor structure designed to produce a temperature-compensated voltage limitation |
01/18/1996 | WO1996001500A1 SiC FIELD-EFFECT TRANSISTORS AND METHOD OF MANUFACTURING THEM |
01/18/1996 | DE4437016C1 Permeable base transistor production for high frequency power amplifier |
01/18/1996 | DE4435079C1 Switchable power solid state device, e.g. gate turn-off thyristor |
01/18/1996 | DE19525576A1 Dünnfilmtransistor und Verfahren zu dessen Herstellung A thin film transistor and method of producing the |
01/18/1996 | DE19517975A1 Polysilizium-Feldringstruktur für Leistungs-IC's Polysilicon field ring structure for power ICs |
01/17/1996 | EP0692826A2 Method to suppress subthreshold leakage due to sharp isolation corners in submicron FET structures |
01/17/1996 | EP0692825A2 Analogue MISFET with threshold voltage adjuster |
01/17/1996 | EP0692821A2 Method of manufacturing semiconductor layer |
01/17/1996 | EP0692146A1 Charge-coupled device array for spectroscopic detection |
01/17/1996 | EP0692145A1 High-voltage, vertical-trench semiconductor device |
01/17/1996 | EP0692144A1 A pedestal lead frame for supporting a semiconductor chip |
01/17/1996 | CN1115130A Generator motor for vehicles |
01/17/1996 | CN1115120A Semiconductor device and manufacturing method thereof |
01/17/1996 | CN1115118A Method of manufacturing semiconductor devices with semiconductor elements formed in a layer of semiconductor material provided on a support slice |
01/17/1996 | CN1115098A Flash memory cells, metthod for fabricating the same and method for arraying the same |
01/17/1996 | CN1030722C Process for continuously forming large area functional deposited film by microwave PCVD method and apparatus suitable for practicing same |
01/16/1996 | US5485034 Semiconductor device including bipolar transistor having shallowed base |
01/16/1996 | US5485033 Semiconductor device |
01/16/1996 | US5485030 Dielectric element isolated semiconductor device and a method of manufacturing the same |
01/16/1996 | US5485029 On-chip ground plane for semiconductor devices to reduce parasitic signal propagation |
01/16/1996 | US5485028 Semiconductor device having a single crystal semiconductor layer formed on an insulating film |
01/16/1996 | US5485027 Isolated DMOS IC technology |
01/16/1996 | US5485025 Depleted extrinsic emitter of collector-up heterojunction bipolar transistor |
01/16/1996 | US5485023 Insulated gate bipolar transistor |
01/16/1996 | US5485022 High switching speed IGBT |
01/16/1996 | US5485020 Semiconductor device including a thin film transistor and a wiring portion having the same layered structure as and being integral with a source region or drain region of the transistor |
01/16/1996 | US5485019 Semiconductor device and method for forming the same |
01/16/1996 | US5485018 Nanofabricated device for multiple-state logic operation |
01/16/1996 | US5485017 Semiconductor device and method of manufacturing same |
01/16/1996 | US5484745 Method for forming a semiconductor sensor |
01/16/1996 | US5484743 Self-aligned anti-punchthrough implantation process |
01/16/1996 | US5484740 Method of manufacturing a III-V semiconductor gate structure |
01/16/1996 | US5484739 Method for manufacturing a CMOS semiconductor device |
01/16/1996 | US5484738 Method of forming silicon on oxide semiconductor device structure for BiCMOS integrated circuits |
01/16/1996 | US5484737 Method for fabricating bipolar transistor |
01/16/1996 | US5484658 Containing a semiconductor device |
01/16/1996 | US5484073 Method for fabricating suspension members for micromachined sensors |
01/11/1996 | WO1996000888A1 Apparatus for mounting an absolute pressure sensor |
01/11/1996 | DE4423619A1 Laterale Halbleiterstruktur zur Bildung einer temperaturkompensierten Spannungsbegrenzung Lateral semiconductor structure to form a temperature compensated voltage limit |
01/11/1996 | DE19524665A1 Flash-Speicherzellen und Verfahren zum Herstellen derselben sowie Verfahren zum Anordnen derselben Flash memory cells and methods of manufacturing the same as well as method of arranging the same |
01/11/1996 | DE19524548A1 Compound body semiconductor device for e.g. field effect transistor |
01/11/1996 | DE19507146A1 Semiconductor device used as FET |
01/10/1996 | EP0691689A1 Semiconductor light emitting element |
01/10/1996 | EP0691688A2 Top gate thin-film transistor and method for producing the same |
01/10/1996 | EP0691687A2 Vertical MOS semiconductor device |
01/10/1996 | EP0691686A1 High voltage planar edge termination structure and method of making same |
01/10/1996 | EP0691683A2 Protection structure for integrated circuits |
01/10/1996 | EP0691565A1 Active matrix liquid-crystal display apparatus |
01/10/1996 | EP0691035A1 Linear voltage-controlled resistance element |
01/10/1996 | EP0691034A1 Bipolar transistor structure using ballast resistor |
01/10/1996 | EP0664051A4 METHOD FOR FORMING THIN TUNNELING WINDOWS IN EEPROMs. |
01/10/1996 | EP0504390B1 Thin film transistor stucture with improved source/drain contacts |
01/10/1996 | CN2217264Y High speed tunnel insulated gate bipolar transistor |
01/09/1996 | US5483487 Electrically programmable memory device with improved dual floating gates |
01/09/1996 | US5483484 Electrically erasable programmable read-only memory with an array of one-transistor memory cells |
01/09/1996 | US5483483 Read-only memory device |
01/09/1996 | US5483404 Semiconductor integrated circuit |
01/09/1996 | US5483097 Film made from hydrogen containing silicon nitride film with specified hydrogen bond concentration amd silicon/nitrogen ratio limits; transmits uv radiation |
01/09/1996 | US5483092 Semiconductor device having a via-hole with a void area for reduced cracking |
01/09/1996 | US5483091 Charge-coupled device array for spectroscopic detection |
01/09/1996 | US5483090 Solid-state image pickup device and method for manufacturing such device |
01/09/1996 | US5483089 Electrically isolated MESFET |
01/09/1996 | US5483088 Compounds and infrared devices including In1-x Tlx Q, where Q is As1-y Py and 0≦y≦1 |
01/09/1996 | US5483087 Bidirectional thyristor with MOS turn-off capability with a single gate |
01/09/1996 | US5483086 Four layer semiconductor surge protector having plural short-circuited junctions |
01/09/1996 | US5483082 Thin film transistor matrix device |
01/09/1996 | US5482894 Method of fabricating a self-aligned contact using organic dielectric materials |
01/09/1996 | US5482889 Method for producing of semiconductor device having of channel stopper under field insulating layer |
01/09/1996 | US5482888 Method of manufacturing a low resistance, high breakdown voltage, power MOSFET |
01/09/1996 | US5482880 Non-volatile memory cell and fabrication method |
01/09/1996 | US5482878 Method for fabricating insulated gate field effect transistor having subthreshold swing |
01/09/1996 | US5482877 Method for making a semiconductor device having a silicon-on-insulator structure |
01/09/1996 | US5482875 Method for forming a linear heterojunction field effect transistor |
01/09/1996 | US5482874 Inversion implant isolation process |
01/09/1996 | US5482873 Method for fabricating a bipolar power transistor |
01/09/1996 | US5482871 Method for forming a mesa-isolated SOI transistor having a split-process polysilicon gate |
01/09/1996 | US5482870 Methods for manufacturing low leakage current offset-gate thin film transistor |