Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/1996
03/12/1996US5498555 Method of making LDD with polysilicon and dielectric spacers
03/12/1996US5498554 Method of making extended drain resurf lateral DMOS devices
03/12/1996US5498553 Method of making a metal gate high voltage integrated circuit
03/07/1996WO1996007300A2 Manufacture of electronic devices comprising thin-film circuitry
03/07/1996WO1996007205A1 Dynamic threshold voltage mosfet for ultra-low voltage operation
03/07/1996WO1996007200A1 Process for manufacture of mos gated device with reduced mask count
03/07/1996WO1996007197A2 A variable capacitance semiconductor diode
03/07/1996DE4431338A1 Micro-mechanical acceleration sensor formed by differential capacitor
03/07/1996DE4431299A1 Integrierte Digitale Magnetfeld-Detektoren Integrated Digital magnetic field detectors
03/07/1996DE19532621A1 Semiconductor device for esp. field effect transistor
03/07/1996DE19532363A1 Semiconductor device mfr. for FET with characteristic adjustment
03/06/1996EP0700201A2 A white clip circuit
03/06/1996EP0700099A2 A four-region (PNPN) semiconductor device
03/06/1996EP0700098A1 Self-aligned buried channel/junction stacked gate flash memory cell
03/06/1996EP0700097A1 A self-aligned buried channel/junction stacked gate flash memory cell
03/06/1996EP0700096A2 SOI-field effect transistor und method for making the same
03/06/1996EP0700095A2 Gate-turn-off-thyristor with high blocking voltage and small device thickness
03/06/1996EP0700094A2 Insulated gate thyristor
03/06/1996EP0700092A2 Complementary heterojunction semiconductor device
03/06/1996EP0700090A1 Semiconductor integrated circuit comprising a current mirror circuit
03/06/1996EP0700081A2 Method of fabricating semiconductor device comprising an integrated circuit with self-aligned silicide regions
03/06/1996EP0700080A2 Method of producing self-aligned contacts on semiconductor devices and self-aligned contact structure
03/06/1996EP0700079A2 State induction thyristor and fabrication process thereof
03/06/1996EP0699346A1 Scr electrostatic discharge protection for integrated circuits
03/06/1996EP0699344A1 Eeprom cell with the drain diffusion region self-aligned to the tunnel oxide region and method of manufacture
03/05/1996US5497345 Nonvolatile EPROM, EEPROM of flash-EEPROM memory with tunnel oxide protection
03/05/1996US5497285 Power MOSFET with overcurrent and over-temperature protection
03/05/1996US5497026 Semiconductor device with improved breakdown voltage characteristics
03/05/1996US5497024 GaAs MIS device
03/05/1996US5497020 Charge drain for a MIS device
03/05/1996US5497019 Silicon-on-insulator gate-all-around MOSFET devices and fabrication methods
03/05/1996US5497018 Semiconductor memory device having a floating gate with improved insulation film quality
03/05/1996US5497015 Quantum interference transistor
03/05/1996US5497013 Semi-conductor chip having interdigitated gate runners with gate bonding pads
03/05/1996US5497012 Unipolar band minima devices
03/05/1996US5497011 Semiconductor memory device and a method of using the same
03/05/1996US5497010 High-voltage semiconductor device
03/05/1996US5496779 Method for fabricating a self-aligned T-gate metal semiconductor field effect transistor
03/05/1996US5496775 Tower, integrated circuit
03/05/1996US5496771 Method of making overpass mask/insulator for local interconnects
03/05/1996US5496761 Method of making junction-isolated high voltage MOS integrated device
03/05/1996US5496753 Method of fabricating a semiconductor nonvolatile storage device
03/05/1996US5496752 Method of manufacturing thin film transistors in a liquid crystal display apparatus
03/05/1996US5496751 Method of forming an ESD and hot carrier resistant integrated circuit structure
03/05/1996US5496750 Elevated source/drain junction metal oxide semiconductor field-effect transistor using blanket silicon deposition
03/05/1996US5496749 Method of manufacturing thin film transistors in a liquid crystal display apparatus
03/05/1996US5496748 Multilayer element with pattern masking layer, metal layers and coverings then removal of films
03/05/1996US5496746 Method for fabricating a bipolar junction transistor exhibiting improved beta and punch-through characteristics
03/05/1996US5496744 Method of fabricating complementary poly emitter transistors
03/05/1996US5496743 Method of making an article comprising a semiconductor device
03/05/1996US5496742 Method for manufacturing semiconductor device enabling gettering effect
03/05/1996CA2051453C Long wavelength transmitter opto-electronic integrated circuit
02/1996
02/29/1996WO1996006458A1 Layout for radio frequency power transistors
02/29/1996WO1996006456A1 Active matrix electroluminescent display pixel and method of fabricating same
02/29/1996WO1996006358A1 Transducer
02/29/1996DE19520639A1 Monolithic driver or liquid crystal display device for pixel signal input
02/29/1996CA2174219A1 Layout for radio frequency power transistors
02/28/1996EP0698927A2 Unit capacitor
02/28/1996EP0698926A2 Normally off-static induction thyristor and method of manufacturing the same
02/28/1996EP0698925A2 Bipolar transistor with floating base
02/28/1996EP0698919A2 Trenched DMOS transistor fabrication using seven masks
02/28/1996EP0698918A1 A conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
02/28/1996EP0698223A1 Method of manufacturing a reflective display
02/27/1996US5495441 Split-gate flash memory cell
02/27/1996US5495439 Semiconductor memory device having SOI structure and manufacturing method thereof
02/27/1996US5495438 Nondestructive readout-type ferroelectric memory device having twisted hysteresis
02/27/1996US5495124 Semiconductor device with increased breakdown voltage
02/27/1996US5495123 Structure to protect against below ground current injection
02/27/1996US5495121 Semiconductor device
02/27/1996US5495119 MOS thin film transistor having high breakdown voltage
02/27/1996US5495118 Semiconductor device
02/27/1996US5495117 Stacked ferroelectric memory cell
02/27/1996US5495116 High sensitivity, broad band charge detecting apparatus with suppression of mixing of noise
02/27/1996US5495115 Semiconductor crystalline laminate structure, forming method of the same, and semiconductor device employing the same
02/27/1996US5494838 Process of making EEPROM memory device having a sidewall spacer floating gate electrode
02/27/1996US5494837 Method of forming semiconductor-on-insulator electronic devices by growing monocrystalline semiconducting regions from trench sidewalls
02/27/1996US5494836 Process of producing heterojunction bipolar transistor with silicon-germanium base
02/22/1996WO1996005621A1 COMPOUNDS AND INFRARED DEVICES INCLUDING In1-xTlxQ, WHERE Q IS As1-yPy AND 0 « y « 1
02/22/1996WO1996005619A1 Varactor diode having a stepped capacitance-voltage profile
02/22/1996WO1996005618A1 High-voltage ldd-mosfet with increased breakdown voltage and method of fabrication
02/22/1996WO1996005616A1 Electrostatic discharge protection circuit
02/22/1996DE4429284A1 Semiconductor component with two integrated switch elements
02/22/1996DE19527314A1 Fabrication of silicon membrane with predefined parameters
02/22/1996CA2197295A1 Compounds and infrared devices including in1-xtlxq, where q is as1-ypy and 0 <= y <= 1
02/21/1996EP0697741A1 Resonant tunneling devices
02/21/1996EP0697740A2 Low threshold voltage, high performance junction transistor
02/21/1996EP0697739A1 Power device integrated structure with low saturation voltage
02/21/1996EP0697738A1 Semiconductor diamond device having improved metal-diamond contact
02/21/1996EP0697737A1 Quantum dot computing elements
02/21/1996EP0697736A2 MOS controlled power semiconductor device for high voltages
02/21/1996EP0697733A2 Electrostatic discharge protection device and method of forming
02/21/1996EP0697728A1 MOS-technology power device chip and package assembly
02/21/1996EP0697720A1 A conductive amorphous-nitride barrier layer for high dielectric-constant material electrodes
02/21/1996EP0697719A2 Microelectronic structure including a conductive exotic-nitride barrier layer for high-dielectric-constant material electrodes and method of fabricating the same
02/21/1996EP0697717A1 Method of making electrical connections to materials with high-dielectric-constant
02/21/1996EP0697714A1 Method for forming gate electrode of semiconductor device
02/21/1996CN1117178A Liquid crystal display device
02/20/1996US5493149 Transistor device with increased breakdown voltage
02/20/1996US5493142 Input/output transistors with optimized ESD protection
02/20/1996US5493140 Nonvolatile memory cell and method of producing the same
1 ... 1953 1954 1955 1956 1957 1958 1959 1960 1961 1962 1963 1964 1965 1966 1967 1968 1969 1970 1971 1972 1973 ... 2182