Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/1996
05/28/1996US5521728 Liquid crystal display device with improved blocking ability of frame area and increased prevention of electrostatic failure
05/28/1996US5521437 Semiconductor power module having an improved composite board and method of fabricating the same
05/28/1996US5521424 Semiconductor device having a silicon oxide film containing fluorine atoms
05/28/1996US5521421 Semiconductor device
05/28/1996US5521419 Semiconductor device having field shield element isolating structure and method of manufacturing the same
05/28/1996US5521414 Monolithic integrated structure to protect a power transistor against overvoltage
05/28/1996US5521411 Transistor spacer etch pinpoint structure
05/28/1996US5521410 Power semiconductor device comprising vertical double-diffused MOSFETS each having low on-resistance per unit area
05/28/1996US5521409 Structure of power mosfets, including termination structures
05/28/1996US5521405 Charge transfer device with two-phase two-layered electrode structure and method for fabricating the same
05/28/1996US5521404 Spacer layer having a lattice mismatch with electron supply layer
05/28/1996US5521403 Field-effect transistor having a graded contact layer
05/28/1996US5521399 Advanced silicon on oxide semiconductor device structure for BiCMOS integrated circuit
05/28/1996US5521127 Re-oxidized nitrided oxides and re-annealed nitrided oxides prepared by rapid thermal processing
05/28/1996US5521117 Process for active device constructed in opening formed in insulation layer with a resistor
05/28/1996US5521114 Trench sidewall structure
05/28/1996US5521108 Process for making a conductive germanium/silicon member with a roughened surface thereon suitable for use in an integrated circuit structure
05/28/1996US5521107 Method for forming a field-effect transistor including anodic oxidation of the gate
05/28/1996US5521105 Method of forming counter-doped island in power MOSFET
05/28/1996US5520051 Strain sensing device
05/23/1996WO1996015558A1 Bidirectional ac switching device with mos-gated turn-on and turn-off control
05/23/1996WO1996015557A1 Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein and methods of forming same
05/23/1996WO1996015556A1 Integrated circuit capacitors utilizing low curie point ferroelectrics
05/23/1996WO1996015550A1 Silicon-germanium-carbon compositions and processes thereof
05/23/1996DE19542799A1 Semiconductor direction deviation or yaw sensor for motor vehicle navigation
05/23/1996DE19542411A1 Semiconductor device
05/22/1996EP0713255A1 Ceramic diaphragm structure and method for producing the same
05/22/1996EP0713249A1 Method for forming semiconductor devices with oxide layers having different thicknesses
05/22/1996EP0713247A2 Method of fabricating semiconductor device and method of fabricating high-frequency semiconductor device
05/22/1996EP0713163A1 Protection circuit and method for power transistors, voltage regulator using the same
05/22/1996EP0712536A1 A SEMICONDUCTOR HETEROSTRUCTURE HAVING A II-VI COMPOUND IN OHMIC CONTACT WITH A p-TYPE GaAs SUBSTRATE
05/22/1996EP0712535A1 Trenched dmos transistor with channel block at cell trench corners
05/22/1996EP0692146A4 Charge-coupled device array for spectroscopic detection
05/22/1996CN1031854C Semi-conductor device
05/21/1996US5519749 Horizontal charge coupled device having a multiple reset gate
05/21/1996US5519653 Channel accelerated carrier tunneling-(CACT) method for programming memories
05/21/1996US5519254 Multilayer aluminum wiring in semiconductor IC
05/21/1996US5519249 Vertical type bipolar transistor
05/21/1996US5519246 Nonvolatile memory apparatus using an ultraviolet impermeable resin film
05/21/1996US5519245 Insulated gate bipolar transistor with reverse conducting current
05/21/1996US5519242 Electrostatic discharge protection circuit for a NMOS or lateral NPN transistor
05/21/1996US5519241 Circuit structure having at least one bipolar power component and method for the operation thereof
05/21/1996US5519239 Structure and method for improved memory arrays and improved electrical contacts in semiconductor devices
05/21/1996US5519235 Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes
05/21/1996US5519232 Transistor comprising a periodic length structure gate controlling electron conductivity
05/21/1996US5519231 Pressure-connection type semiconductor device having a thermal compensator in contact with a semiconductor base substrate in an alloy-free state
05/21/1996US5518958 Prevention of agglomeration and inversion in a semiconductor polycide process
05/21/1996US5518953 Method for manufacturing semiconductor device having grown layer on insulating layer
05/21/1996US5518951 Method for making thin film piezoresistive sensor
05/21/1996US5518944 MOS transistor and its fabricating method
05/21/1996US5518943 Method of manufacturing nonvolatile semiconductor memory device having an implanted damage layer
05/21/1996US5518940 Method of manufacturing thin film transistors in a liquid crystal display
05/21/1996US5518939 Method and apparatus for static RAM
05/21/1996US5518938 Process for fabricating a CMOS transistor having high-voltage metal-gate
05/21/1996US5518937 Semiconductor device having a region doped to a level exceeding the solubility limit
05/21/1996US5518936 Forming metal layer on dielectric substrate, doping surface of metal, then oxidizing surface of metal yields new dielectric layer having greater surface resistance
05/17/1996WO1996014665A1 Ballast monitoring for radio frequency power transistors
05/17/1996WO1996014662A1 Microelectronic integrated circuit structure and method using three directional interconnect routing based on hexagonal geometry
05/17/1996WO1996014658A1 Integrated circuit with complementary isolated bipolar transitors and method of making same
05/17/1996WO1996014657A1 Integrated circuit passivation process and structure
05/17/1996CA2204382A1 Ballast monitoring for radio frequency power transistors
05/15/1996EP0712167A2 Schottky barrier diode
05/15/1996EP0712163A1 Electrically erasable non-volatile memory device and method of manufacturing such a device
05/15/1996EP0712155A2 Method for making ohmic contact to lightly doped islands from a silicide buried layer and applications
05/15/1996EP0712152A1 Semiconductor device and method for its manufacture
05/15/1996EP0712151A1 Method for adjusting the current gain of polysilicon emitter bipolar transistors
05/15/1996EP0711457A1 A reverse field plate, junction-terminating structure
05/15/1996EP0711424A1 Silicon pixel electrode
05/15/1996EP0711416A1 Electrostatically force balanced silicon accelerometer
05/15/1996EP0711363A1 Process for producing high-resistance silicon carbide
05/15/1996EP0556201B1 Semiconductor device with a voltage-limiting region
05/15/1996DE4439995A1 Photodiode array for medical computer tomography
05/15/1996DE4344808C2 Aktive Matrix für Flüssigkristallanzeigen Active matrix liquid crystal displays
05/15/1996DE19542240A1 Semiconductor device for static random access memory
05/15/1996CN1122519A Electrostatic discharge protection device and method of forming
05/14/1996US5517457 Semiconductor memory device
05/14/1996US5517443 Method and system for protecting a stacked gate edge in a semi-conductor device from self aligned source (SAS) etch in a semi-conductor device
05/14/1996US5517342 Liquid crystal display having additional capacitors formed from pixel electrodes and a method for manufacturing the same
05/14/1996US5517341 Liquid crystal display with TFT and capacitor electrodes with redundant connection
05/14/1996US5517224 Semiconductor device for driving heat generator
05/14/1996US5517150 Analog switch formed of thin film transistor and having reduced leakage current
05/14/1996US5517054 N-InP Schottky diode structure and a method of making the same
05/14/1996US5517048 Pad structure with parasitic MOS transistor for use with semiconductor devices
05/14/1996US5517046 High voltage lateral DMOS device with enhanced drift region
05/14/1996US5517044 Non-volatile semiconductor memory device having thin film transistors equipped with floating gates
05/14/1996US5516725 Contact alloy having capacity when in combination with a substrate compound to exist as a two phase binary equilibrium reciprocal system; sputtering; annealing
05/14/1996US5516716 Method of making a charge coupled device with edge aligned implants and electrodes
05/14/1996US5516714 Method of making output terminal of a solid-state image device
05/14/1996US5516712 Method of fabricating radiation imager with single passivation dielectric for transistor and diode
05/14/1996US5516711 Method for forming LDD CMOS with oblique implantation
05/14/1996US5516710 Method of forming a transistor
05/14/1996US5516709 Method of manufacturing bipolar transistor with reduced numbers of steps without increasing collector resistance
05/14/1996US5516707 Large-tilted-angle nitrogen implant into dielectric regions overlaying source/drain regions of a transistor
05/14/1996US5516705 Method of forming four layer overvoltage protection device
05/14/1996US5516589 Silicon carbide thin film circuit element and method of manufacturing the same
05/14/1996US5516404 Method for manufacturing a micro-electronic component having an electrically conductive tip of doped silicon
05/14/1996CA2040660C Epitaxial silicon layer and method to deposit such
05/09/1996WO1996013864A1 Heterojunction energy gradient structure
05/09/1996WO1996013863A2 Field effect device
05/09/1996WO1996013862A1 Silicon-on-insulator device with floating collector
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