| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/09/1996 | WO1996013861A1 High resolution active matrix lcd cell design |
| 05/09/1996 | WO1996013860A1 Ferroelectric memory |
| 05/09/1996 | WO1996013857A1 Stable high voltage semiconductor device structure |
| 05/09/1996 | DE4439569A1 Silicon bipolar transistor with PNP structure |
| 05/09/1996 | DE4439012A1 Bidirectional thyristor for high voltage blocking |
| 05/09/1996 | CA2204136A1 Silicon-on-insulator device with floating collector |
| 05/08/1996 | EP0710989A2 Field-effect transistor and method of producing same |
| 05/08/1996 | EP0710988A2 Manufacturing method for semiconductor devices controlled by field effect |
| 05/08/1996 | EP0710984A1 Method of fabricating monolithic multifunction integrated circuit devices |
| 05/08/1996 | EP0710843A1 Capacitive acceleration sensor |
| 05/08/1996 | EP0710826A2 High pressure sensor structure and method |
| 05/08/1996 | EP0710399A1 Process for fabricating semiconductor devices having arsenic emitters |
| 05/08/1996 | EP0710357A1 Dielectrically isolated resonant microsensors |
| 05/08/1996 | CN1122165A Arangement for recovery of threshold voltage shift of noncrystalline siliceous film transistor device |
| 05/07/1996 | US5515319 Non-volatile memory cell and level shifter |
| 05/07/1996 | US5515318 Method of evaluating the gate oxide of non-volatile EPROM, EEPROM and flash-EEPROM memories |
| 05/07/1996 | US5515226 Integrated circuit incorporating a system of protection against electrostatic discharges |
| 05/07/1996 | US5514949 Current mirror with at least one PNP-transistor |
| 05/07/1996 | US5514904 Semiconductor device with monocrystalline gate insulating film |
| 05/07/1996 | US5514903 Compound semiconductor single-crystalline substrate for liquid phase epitaxial growth |
| 05/07/1996 | US5514902 First and second implantation layer include a material selected from nitrogen, fluorine, argon, oxygen and carbon; source and drain regions are of p-conductivity |
| 05/07/1996 | US5514898 Semiconductor device with a piezoresistive pressure sensor |
| 05/07/1996 | US5514896 Nonvolatile semiconductor memory device |
| 05/07/1996 | US5514894 Protection circuit device for a semiconductor integrated circuit device |
| 05/07/1996 | US5514891 N-type HIGFET and method |
| 05/07/1996 | US5514890 Electrically erasable programmable memory device with improved erase and write operation |
| 05/07/1996 | US5514889 Non-volatile semiconductor memory device and method for manufacturing the same |
| 05/07/1996 | US5514886 Image sensor with improved output region for superior charge transfer characteristics |
| 05/07/1996 | US5514883 Field effect transistor |
| 05/07/1996 | US5514882 Bistable four layer device memory cell and method for storing and retrieving binary information |
| 05/07/1996 | US5514880 Field effect thin-film transistor for an SRAM with reduced standby current |
| 05/07/1996 | US5514879 Gate insulated field effect transistors and method of manufacturing the same |
| 05/07/1996 | US5514876 Multi-terminal resonant tunneling transistor |
| 05/07/1996 | US5514621 Method of etching polysilicon using a thin oxide mask formed on the polysilicon while doping |
| 05/07/1996 | US5514620 Method of producing PN junction device |
| 05/07/1996 | US5514619 Method of producing a laser device |
| 05/07/1996 | US5514614 Method for producing quantization functional device utilizing a resonance tunneling effect |
| 05/07/1996 | US5514612 Method of making a semiconductor device with integrated RC network and schottky diode |
| 05/07/1996 | US5514611 Method of manufacturing a semiconductor memory device having a read-only memory cell |
| 05/07/1996 | US5514608 Method of making lightly-doped drain DMOS with improved breakdown characteristics |
| 05/07/1996 | US5514607 Method of manufacturing a semiconductor memory device |
| 05/07/1996 | US5514606 Formation of stable source, drain and gate contacts while eliminating critical processing steps |
| 05/07/1996 | US5514604 Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making |
| 05/02/1996 | WO1996013067A1 Method of, and apparatus for, producing thin film transistor |
| 05/02/1996 | WO1996013064A1 Process for producing a read-only storage cell arrangement with vertical mos transistors |
| 05/02/1996 | WO1996012935A1 Expansion gauge for measuring the expansion of single-crystalline semiconductor material |
| 05/02/1996 | WO1996007300A3 Manufacture of electronic devices comprising thin-film circuitry |
| 05/02/1996 | DE4438641A1 Power solid state switch of semiconductor switch type |
| 05/02/1996 | DE4438318A1 CCD with improved quality and reduced defects |
| 05/02/1996 | DE4437581A1 Verfahren zur Herstellung einer Festwertspeicherzellenanordnung mit vertikalen MOS-Transistoren A method of manufacturing a read-only memory cell arrangement with vertical MOS transistors, |
| 05/02/1996 | DE19540174A1 Semiconductor sensor for physical parameter measurement |
| 05/02/1996 | DE19540120A1 Capacitive acceleration sensor for motor vehicle anti-lock brake system |
| 05/02/1996 | DE19539541A1 Lateral trench MISFET for e.g. integrated control circuit of motor or liquid crystal display |
| 05/01/1996 | EP0709900A2 Porous silicon trench and capacitor structures |
| 05/01/1996 | EP0709899A2 Semiconductor diode with electron injector |
| 05/01/1996 | EP0709898A2 Semiconductor diode and method of fabricating the same |
| 05/01/1996 | EP0709897A1 Semiconductor device |
| 05/01/1996 | EP0709896A1 High-frequency lateral PNP transistor |
| 05/01/1996 | EP0709895A2 A quantum effect device |
| 05/01/1996 | EP0709894A1 High-frequency bipolar transistor structure, and related manufacturing process |
| 05/01/1996 | EP0709891A1 Logic level controllable thyristor |
| 05/01/1996 | EP0709889A2 Structure to protect against below ground current injection |
| 05/01/1996 | EP0709880A2 Method of forming raised source/drain regions in an integrated circuit |
| 05/01/1996 | EP0709718A2 Liquid crystal display apparatus and production method thereof |
| 05/01/1996 | EP0708987A2 Semiconductor device provided with an organic semiconductor material |
| 05/01/1996 | EP0708984A1 Multilayer buffer structure including ii-vi compounds on a silicon substrate |
| 05/01/1996 | EP0708983A1 Chemical vapor deposition process for fabricating layered superlattice materials |
| 05/01/1996 | EP0708980A1 High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| 05/01/1996 | EP0568692B1 Power fet with shielded channels |
| 05/01/1996 | CN1121643A Process for manufacturing a semiconductor wafer, a semiconductor wafer, process for manufacturing a semiconductor integrated... |
| 05/01/1996 | CN1121617A Active matrix display and electrooptical device |
| 04/30/1996 | US5512776 Interdigitated IMPATT devices |
| 04/30/1996 | US5512774 Dielectrically isolated substrate and semiconductor device using the same |
| 04/30/1996 | US5512773 Switching element with memory provided with Schottky tunnelling barrier |
| 04/30/1996 | US5512772 Semiconductor device having bipolar transistor and MOS transistor |
| 04/30/1996 | US5512771 MOS type semiconductor device having a low concentration impurity diffusion region |
| 04/30/1996 | US5512770 MOSFET device structure three spaced-apart deep boron implanted channel regions aligned with gate electrode of NMOSFET device |
| 04/30/1996 | US5512769 High breakdown voltage semiconductor device and method of fabricating the same |
| 04/30/1996 | US5512764 Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications |
| 04/30/1996 | US5512762 Quantum device with plural stable states |
| 04/30/1996 | US5512519 Method of forming a silicon insulating layer in a semiconductor device |
| 04/30/1996 | US5512518 Method of manufacture of multilayer dielectric on a III-V substrate |
| 04/30/1996 | US5512517 Self-aligned gate sidewall spacer in a corrugated FET and method of making same |
| 04/30/1996 | US5512516 Contact structure for connecting an electrode to a semiconductor device and a method of forming the same |
| 04/30/1996 | US5512506 Lightly doped drain profile optimization with high energy implants |
| 04/30/1996 | US5512504 Method of making a memory array with field oxide islands eliminated |
| 04/30/1996 | US5512502 Manufacturing method for semiconductor integrated circuit device |
| 04/30/1996 | US5512501 Method of manufacturing a semiconductor device having an SOI structure |
| 04/30/1996 | US5512500 Method of fabricating semiconductor device |
| 04/30/1996 | US5512499 Method of making symmetrical and asymmetrical MESFETS |
| 04/30/1996 | US5512496 Method of making collector-up bipolar transistor having improved emitter injection efficiency |
| 04/30/1996 | US5512495 Method of manufacturing extended drain resurf lateral DMOS devices |
| 04/30/1996 | US5512494 Method for manufacturing a thin film transistor having a forward staggered structure |
| 04/25/1996 | WO1996012346A2 A protected switch |
| 04/25/1996 | WO1996012302A1 Permeable base transistor and process for the preparation thereof |
| 04/25/1996 | DE4437306A1 Dehnungsmesser zur Messung der Dehnung einkristallinen Halbleitermaterials Strain gauge for measuring strain monocrystalline semiconductor material |
| 04/25/1996 | DE19539178A1 Halbleiterbeschleunigungssensor und Prüfverfahren für diesen Semiconductor acceleration sensor and test methods for these |
| 04/25/1996 | DE19538805A1 Semiconductor component with group III=V connection layer for e.g. double heterostructure laser |
| 04/24/1996 | EP0708516A1 Electrostatic discharge protection device for integrated circuit |
| 04/24/1996 | EP0708515A1 Protective circuit for protecting load against excessive input voltage |