| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 10/02/1997 | WO1997036324A1 Active matrix displays and method of making |
| 10/02/1997 | WO1997036321A1 Process to separate the doping of polygate and source drain regions |
| 10/02/1997 | WO1997036319A1 A method for producing a semiconductor device by the use of an implanting step and a device produced thereby |
| 10/02/1997 | WO1997036317A2 A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS OF SiC BY THE USE OF AN IMPLANTING STEP AND A DEVICE PRODUCED THEREBY |
| 10/02/1997 | WO1997036316A2 A FIELD CONTROLLED SEMICONDUCTOR DEVICE OF SiC AND A METHOD FOR PRODUCTION THEREOF |
| 10/02/1997 | WO1997036315A2 A transistor having a vertical channel and a method for production thereof |
| 10/02/1997 | WO1997036314A2 A FIELD EFFECT TRANSISTOR OF SiC AND A METHOD FOR PRODUCTION THEREOF |
| 10/02/1997 | WO1997036313A2 A FIELD CONTROLLED SEMICONDUCTOR DEVICE OF SiC AND A METHOD FOR PRODUCTION THEREOF |
| 10/02/1997 | WO1997026678A3 A semiconductor device with a low resistance ohmic contact between a metal layer and a sic-layer |
| 10/02/1997 | DE19651247A1 Input=output protection circuit for SOI with field effect transistor |
| 10/02/1997 | DE19642538A1 Semiconducting device |
| 10/02/1997 | DE19612676A1 Highly integrated, non-volatile semiconductor storage cell |
| 10/02/1997 | DE19611692A1 Bipolartransistor mit Hochenergie-implantiertem Kollektor und Herstellverfahren Bipolar high-energy implanted collector and manufacturing |
| 10/01/1997 | EP0798860A2 High voltage level shift circuit including cmos transistor having thin gate insulating film |
| 10/01/1997 | EP0798785A1 High-voltage-resistant MOS transistor, and corresponding manufacturing process |
| 10/01/1997 | EP0798777A2 Method of metallizing submicronie (e.g. micronie) contact holes in semiconductor body |
| 10/01/1997 | EP0798770A2 Silicon wafer with superimposed polycrystalline silicon films on one main surface and its fabrication method |
| 10/01/1997 | EP0798667A2 A mesh generation device and its method for generating meshes having a boundary protective layer |
| 10/01/1997 | EP0798548A1 Strain gauged sensor utilising the piezoresistive effect and its fabrication procedure |
| 10/01/1997 | EP0797844A2 Electronic device manufacture |
| 10/01/1997 | EP0797843A2 Electronic devices comprising thin-film circuitry |
| 10/01/1997 | EP0797841A1 Method for fabricating asymmetrical ldd mos devices |
| 10/01/1997 | CN1161106A Process for preparing thin-film transistor, process for preparing active matrix substrate, and liquid crystal display |
| 10/01/1997 | CN1161104A Method of manufacturing semiconductor device |
| 10/01/1997 | CN1160936A Semiconductor and its producing method |
| 10/01/1997 | CN1160935A Body contact structure for semiconductor device |
| 10/01/1997 | CN1160927A Display device |
| 10/01/1997 | CN1160862A Manufacturing method of display device |
| 09/30/1997 | US5673283 Semiconductor device and fabricating method thereof |
| 09/30/1997 | US5673131 Circuit coupling apparatus |
| 09/30/1997 | US5672992 Charge pump circuit for high side switch |
| 09/30/1997 | US5672906 Semiconductor device having defects of deep level generated by electron beam irradiation in a semiconductor substrate |
| 09/30/1997 | US5672904 Schottky carrier diode with plasma treated layer |
| 09/30/1997 | US5672903 Uncooled ybacuo thin film infrared detector |
| 09/30/1997 | US5672900 Insulated gate field effect transistor with an anodic oxidized gate electrode |
| 09/30/1997 | US5672899 Power semiconductor switch with an integrated circuit |
| 09/30/1997 | US5672897 Bimos semiconductor integrated circuit device including high speed vertical bipolar transistors |
| 09/30/1997 | US5672894 Semiconductor device |
| 09/30/1997 | US5672893 Protective configuration against electrostatic discharges in semiconductor components controllable by field effect |
| 09/30/1997 | US5672892 Process for making and programming a flash memory array |
| 09/30/1997 | US5672890 Field effect transistor with lightly doped drain regions |
| 09/30/1997 | US5672889 Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making |
| 09/30/1997 | US5672888 Thin-film transistor and thin-film transistor array |
| 09/30/1997 | US5672533 Field effect transistor having impurity regions of different depths and manufacturing method thereof |
| 09/30/1997 | US5672531 Method for fabrication of a non-symmetrical transistor |
| 09/30/1997 | US5672530 Method of making MOS transistor with controlled shallow source/drain junction |
| 09/30/1997 | US5672529 Method of manufacturing nonvolatile semiconductor memory device |
| 09/30/1997 | US5672528 Method for making semiconductor device having field limiting ring |
| 09/30/1997 | US5672526 Method of fabricating a semiconductor device using element isolation by field shield |
| 09/30/1997 | US5672525 Polysilicon gate reoxidation in a gas mixture of oxygen and nitrogen trifluoride gas by rapid thermal processing to improve hot carrier immunity |
| 09/30/1997 | US5672524 Three-dimensional complementary field effect transistor process |
| 09/30/1997 | US5672523 Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment |
| 09/30/1997 | US5672522 Patterning; implanting silicon ions; forming ohmic contacts |
| 09/30/1997 | US5672521 Integrated circuits |
| 09/30/1997 | US5672518 Method of fabricating semiconductor device having stacked layered substrate |
| 09/30/1997 | US5672449 Silicon membrane and method of making same |
| 09/30/1997 | US5672251 Dopes, tantalum |
| 09/25/1997 | WO1997035347A1 Semiconductor device |
| 09/25/1997 | WO1997035346A1 Field effect-controlled semiconductor component |
| 09/25/1997 | DE19630740A1 Bipolar transistor with closed circuit anode and side positioned gate electrode |
| 09/25/1997 | DE19611046A1 Halbleitervorrichtung Semiconductor device |
| 09/24/1997 | EP0797301A2 Method for controlling the turn-on of an IGBT and device for carrying out the method |
| 09/24/1997 | EP0797257A2 Thyristor with reduced minority carrier lifetime and method of producing the same |
| 09/24/1997 | EP0797252A2 Silicon on insulator substrate for fabricating transistors and method for preparing such a substrate |
| 09/24/1997 | EP0797250A2 Method of making contacts on a semiconductor device |
| 09/24/1997 | EP0797246A1 Electronic TFT device manufacture |
| 09/24/1997 | EP0797245A2 Method of manufacturing a vertical MOS semiconductor device |
| 09/24/1997 | EP0797244A2 Thin ferroelectric film element and method for manufacturing the same |
| 09/24/1997 | EP0797213A1 Non-volatile semiconductor memory |
| 09/24/1997 | EP0796507A1 Contoured-tub fermi-threshold field effect transistor and method of forming same |
| 09/24/1997 | EP0616724B1 Electronic device and production method therefor |
| 09/24/1997 | CN1160293A Semiconductor device and method of fabricating the same |
| 09/24/1997 | CN1160292A Semiconductor device |
| 09/24/1997 | CN1160291A Semiconductor integrated circuit device, method for manufacturing the same and logical circuit |
| 09/24/1997 | CN1160206A 半导体加速度传感器 Semiconductor acceleration sensor |
| 09/23/1997 | US5671437 Quantum dot-tunnel device and information processing apparatus and method using same |
| 09/23/1997 | US5671229 Flash eeprom system with defect handling |
| 09/23/1997 | US5671026 Liquid crystal display device with TFT ESD protective devices between I/O terminals or with a short circuited alignment film |
| 09/23/1997 | US5670959 Antenna reflector |
| 09/23/1997 | US5670827 Cytochrome and/or organella, such as mitochondria containing electroconductive protein electrode on hydroxy, chloro or fluoroapatite dielectric film deposited on a substrate; minimization of undesired electron transfer |
| 09/23/1997 | US5670822 CMOS process compatible self-alignment lateral bipolar junction transistor |
| 09/23/1997 | US5670820 Semiconductor element incorporating a resistive device |
| 09/23/1997 | US5670819 Semiconductor device with pad electrode |
| 09/23/1997 | US5670813 Protection circuit for electronic components employing bipolar transistors |
| 09/23/1997 | US5670811 Vertical insulated gate semiconductor device having high current density and high reliability |
| 09/23/1997 | US5670809 Non-volatile semiconductor memory device |
| 09/23/1997 | US5670808 Semiconductor |
| 09/23/1997 | US5670804 PN-junction gate FET |
| 09/23/1997 | US5670803 Three-dimensional SRAM trench structure and fabrication method therefor |
| 09/23/1997 | US5670801 Heterojunction bipolar transistor |
| 09/23/1997 | US5670800 Intermetallic layer on base substrate; semiconductor layer on intermetallic layer; semiconductor elements on wiring |
| 09/23/1997 | US5670798 Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
| 09/23/1997 | US5670796 Semiconductor device consisting of a semiconductor material having a deep impurity level |
| 09/23/1997 | US5670795 Thin-film transistor array for display |
| 09/23/1997 | US5670794 Thin film transistors |
| 09/23/1997 | US5670793 Depositing pure silicon, then impurity layer at interface; heat treatment |
| 09/23/1997 | US5670790 Electronic device |
| 09/23/1997 | US5670789 Semiconductor light-emitting device with quantum well structure |
| 09/23/1997 | US5670419 Depositing amorphous silicon in low pressure, nitrogen-free atmosphere to prevent nitriding |
| 09/23/1997 | US5670414 Carbonization |