Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1997
10/15/1997EP0800705A1 Manufacture of a semiconductor device with selectively deposited semiconductor zone
10/15/1997EP0800651A1 A micromechanical accelerometer
10/15/1997CN1162189A Thin-film semiconductor and mfg. method thereof, semiconductor and mfg. method thereof
10/14/1997US5677876 Flash EEPROM with impurity diffused layer in channel area and process of production of same
10/14/1997US5677871 Circuit structure for a memory matrix and corresponding manufacturing method
10/14/1997US5677867 Memory with isolatable expandable bit lines
10/14/1997US5677866 Semiconductor memory device
10/14/1997US5677573 Field effect transistor
10/14/1997US5677572 Thin nonconducting layer having strong dipole character contacting semiconductor and covered with conductive layer having good oxidation resistance; low resistance contact with good corrosion resistance
10/14/1997US5677563 Gate stack structure of a field effect transistor
10/14/1997US5677562 Planar P-N junction semiconductor structure with multilayer passivation
10/14/1997US5677556 Semiconductor device having inversion inducing gate
10/14/1997US5677555 Output driver transistor with multiple gate bodies
10/14/1997US5677554 FET having a dielectrically isolated gate connect
10/14/1997US5677553 Semiconductor device strucutre having a two-dimensional electron gas and contact thereto
10/14/1997US5677552 Optical control circuit for an optical pnpn thyristor
10/14/1997US5677550 Integrated circuit devices including insulated-gate transistor device having two separately biasable gates
10/14/1997US5677548 Silicon-on-insulator structure and semiconductor pressure detecting device using the structure
10/14/1997US5677547 Thin film transistor and display device including same
10/14/1997US5677249 Semiconductor apparatus and production method for the same
10/14/1997US5677240 Method for forming a semiconductor device
10/14/1997US5677218 Forming gate oxide layer on substrate, forming polysilicon layer, forming dielectric charge, patterning, etching, forming spacers, doping, oxidizing polysilicon layer, etching to form gate
10/14/1997US5677217 Method for fabricating a mosfet device, with local channel doping and a titanium silicide gate
10/14/1997US5677216 Forming trench in polysilicon gate to increase surface area
10/14/1997US5677215 Method of fabricating a nonvolatile semiconductor memory device
10/14/1997US5677214 Raised source/drain MOS transistor with covered epitaxial notches and fabrication method
10/14/1997US5677212 Method of forming a liquid crystal device
10/14/1997US5677211 Method for manufacturing a thin film transistor
10/14/1997US5677210 Method of producing a fully planarized concave transistor
10/14/1997US5677209 Method for fabricating a vertical bipolar transistor
10/14/1997US5677208 Method for making FET having reduced oxidation inductive stacking fault
10/14/1997US5677207 Method for fabricating a thin film transistor using silicide layer
10/14/1997US5677206 Method of making a poly-silicon thin film transistor having lightly doped drain structure
10/14/1997US5677205 Method for forming electrostatic discharge protection device for integrated circuit
10/14/1997US5677204 Method of evaluating a thin film for use in semiconductor device
10/14/1997US5676850 Micromechanical barb and method for making the same
10/09/1997WO1997037386A1 Field effect transistor with higher mobility
10/09/1997WO1997037377A1 Manufacture of a semiconductor device with an epitaxial semiconductor zone
10/09/1997DE19649500A1 Hybrid electron device of superconductive semiconductor hetero structure e.g. Josephson transistor
10/09/1997DE19613409A1 Power component module for MOSFET, e.g. DMOS, or bipolar transistor
10/09/1997DE19613085A1 MOS gate controlled power semiconductor component, e.g. power MOSFET or IGBT
10/08/1997EP0800273A2 Inductive driver and method therefor
10/08/1997EP0800218A2 Variable capacitance and method for making the same
10/08/1997EP0800216A2 Transistor gate to minimize agglomeration defect sensitivity
10/08/1997EP0800215A2 Circuit structure with at least one MOS-transistor and method of fabrication
10/08/1997EP0800214A1 Device in nitrogen containing semiconductor material
10/08/1997EP0800213A2 Charge transfer device and method of driving the charge transfer device
10/08/1997EP0800207A1 Semiconductor devices
10/08/1997EP0800204A2 A process for device fabrication in which a thin layer of cobalt silicide is formed
10/08/1997EP0800179A2 Method of programming a flash memory cell
10/08/1997EP0800070A1 Pressure sensor package and method of making the same
10/08/1997EP0799500A1 Semiconductor resistor device
10/08/1997EP0799499A2 Semiconductor device having an insulated gate
10/08/1997EP0799495A1 Silicon-germanium-carbon compositions and processes thereof
10/08/1997EP0799412A1 Excitation of polysilicon-based pressure sensors
10/08/1997EP0472654B1 Low voltage triggered snap-back device
10/08/1997CN2264416Y Insulating grid field-effect transistor
10/08/1997CN1161758A Prodn. of MOS gated device with reduced mask count
10/08/1997CN1161575A Ge-Si heterojunction diode with low forward voltage drop and high velocity
10/08/1997CN1161574A Ge-Si anode insulation grid heterojunction transistor
10/08/1997CN1161566A Semi-conductor device and method for mfg. same
10/07/1997US5675522 Method and system for dividing analyzing region in device simulator
10/07/1997US5675386 Method for encoding motion image and apparatus therefor
10/07/1997US5675242 Semiconductor integrated circuit
10/07/1997US5675184 Integrated circuit device
10/07/1997US5675180 Vertical interconnect process for silicon segments
10/07/1997US5675176 Semiconductor device and a method for manufacturing the same
10/07/1997US5675175 In a semiconductor substrate
10/07/1997US5675173 Semiconductor device having a trench for isolating elements and a trench for applying a potential to a substrate
10/07/1997US5675172 Metal-insulator-semiconductor device having reduced threshold voltage and high mobility for high speed/low-voltage operation
10/07/1997US5675171 Integrated insulated gate field effect transistors with thin insulation region between field insulation regions
10/07/1997US5675168 Unsymmetrical MOS device having a gate insulator area offset from the source and drain areas, and ESD protection circuit including such a MOS device
10/07/1997US5675167 Enhancement-type semiconductor having reduced leakage current
10/07/1997US5675166 FET with stable threshold voltage and method of manufacturing the same
10/07/1997US5675165 Stable SRAM cell using low backgate biased threshold voltage select transistors
10/07/1997US5675164 High performance multi-mesa field effect transistor
10/07/1997US5675163 Non-volatile semiconductor memory device with thin insulation layer below erase gate
10/07/1997US5675161 Channel accelerated tunneling electron cell, with a select region incorporated, for high density low power applications
10/07/1997US5675160 Semiconductor memory device having an internal amplification function
10/07/1997US5675159 Recessed gate field effect transistor
10/07/1997US5675157 Transferred electron effect device
10/07/1997US5674788 Treating silicon substrate with nitrogen oxides under high pressure
10/07/1997US5674769 Depositing, removing, selectively etching multilayer including sacrificial spacers, liners, masking and resist layers, in-situ doping; provides decoupling of channel and junction doping
10/07/1997US5674768 Method of making flash EEPROM cell having first and second floating gates
10/07/1997US5674767 Method of manufacturing a semiconductor device having a self-aligned structure for a split gate flash memory device
10/07/1997US5674766 Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer
10/07/1997US5674765 Method for producing a semiconductor device by the use of an implanting step
10/07/1997US5674764 Method of making asymmetric non-volatile memory cell
10/07/1997US5674760 Method of forming isolation regions in a MOS transistor device
10/07/1997US5674759 Heating the sandwiched nitride layer to diffuse hydrogen from silicon layer into transistor
10/07/1997US5674757 Process of fabricating a self-aligned thin-film transistor for a liquid crystal display
10/07/1997US5674406 Stopper manufacturing method of a silicon micromachining structure
10/07/1997US5674304 Method of heat-treating a glass substrate
10/07/1997US5673476 Anode bonding method for selected regions
10/02/1997WO1997036333A1 Tunnelling device and method of producing a tunnelling device
10/02/1997WO1997036332A1 Floating gate non-volatile memory device, and a method of manufacturing the device
10/02/1997WO1997036331A1 REDUCING REVERSE SHORT-CHANNEL EFFECT WITH LIGHT DOSE OF P WITH HIGH DOSE OF As IN N-CHANNEL LDD
10/02/1997WO1997036330A1 Memory cell design with vertically stacked crossovers
10/02/1997WO1997036329A1 Insulated gate bipolar transistor having a trench and a method for production thereof
10/02/1997WO1997036328A1 Bipolar transistor with high-energy-implanted collector, and production process thereof
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