Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1997
10/30/1997WO1997040527A1 Process for producing a doped area in a semiconductor substrate
10/30/1997WO1997040500A1 Semiconductor memory
10/30/1997WO1997008754A3 SiC semiconductor device comprising a pn junction with a voltage absorbing edge
10/30/1997DE19715911A1 Asymmetric resistance circuit for overload current disposal
10/30/1997DE19714703A1 Pressure sensor with metal membrane for use as strain gauge element
10/30/1997DE19714690A1 Flüssigkristallanzeige und Herstellungsverfahren dafür Liquid crystal display and manufacturing method thereof
10/30/1997DE19713656A1 Power semiconductor module with e.g. multiple semiconductor IGBT in bridge circuit
10/30/1997DE19712796A1 Epitaxial silicon carbide wafer with conductivity correction
10/30/1997DE19712566A1 Insulated gate thyristor for heavy current power switch
10/30/1997DE19711961A1 Electrode manufacturing method for semiconductor component, e.g. FET
10/30/1997DE19711729A1 Horizontal field effect transistor
10/30/1997DE19711326A1 IGBT circuit with current limiting circuit
10/30/1997DE19710731A1 Power semiconductor component, e.g. latch-up effect MOSFET or IGBT
10/30/1997DE19710237A1 Fine wet etching of especially silicon substrate
10/30/1997DE19651982A1 Thin film semiconductor component, e.g. SOI or MOSFET DRAM
10/29/1997EP0803914A2 Semiconductor image storage apparatus and semiconductor apparatus using logical operation
10/29/1997EP0803913A1 Schottky diode device and method for its fabrication
10/29/1997EP0803912A1 Field effect transistor
10/29/1997EP0803911A2 Channel structure of field effect transistor and CMOS element
10/29/1997EP0803908A2 Semiconductor device including protection means
10/29/1997EP0803131A1 Novel transistor with ultra shallow tip and method of fabrication
10/29/1997EP0763259A4 Punch-through field effect transistor
10/29/1997CN1163543A Protective parts for telephone line interface
10/29/1997CN1163490A Semiconductor device and its producing method
10/29/1997CN1163489A Semiconductor device and its producing method
10/29/1997CN1163488A 半导体器件 Semiconductor devices
10/29/1997CN1163487A Semiconductor and its producing method
10/29/1997CN1163486A High frequency circuit element and its producing method
10/28/1997US5682211 Integrated dark matrix for an active matrix liquid crystal display with pixel electrodes overlapping gate data lines
10/28/1997US5682055 Method of forming planarized structures in an integrated circuit
10/28/1997US5682052 Method for forming isolated intra-polycrystalline silicon structure
10/28/1997US5682051 CMOS integrated circuit with reduced susceptibility to PMOS punchthrough
10/28/1997US5682050 Bidirectional current blocking MOSFET for battery disconnect switching including protection against reverse connected battery charger
10/28/1997US5682048 Groove-type semiconductor device
10/28/1997US5682046 Multilayer; support, current collector, emitter and electrodes
10/28/1997US5682045 Doping the electron supply layer indium-aluminum-arsenic, heating to infiltrate fluorine, reheating to remove fluorine
10/28/1997US5682044 Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure
10/28/1997US5682041 Alternating an electroconductive compound and dielectric compound
10/28/1997US5682040 Compound semiconductor device having a reduced resistance
10/28/1997US5681997 Excitation of polysilicon based piezoresistive pressure sensors
10/28/1997US5681771 Method of manufacturing a LDD transistor in a semiconductor device
10/28/1997US5681770 Process for making and programming a flash memory array
10/28/1997US5681769 Method of fabricating a high capacitance insulated-gate field effect transistor
10/28/1997US5681768 Transistor having reduced hot carrier implantation
10/28/1997US5681763 Method for making bipolar transistors having indium doped base
10/28/1997US5681762 Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
10/28/1997US5681761 Microwave power SOI-MOSFET with high conductivity metal gate
10/28/1997US5681760 Method for manufacturing thin film transistor
10/28/1997US5681759 Method of fabricating semiconductor device
10/23/1997WO1997039485A1 Silicon carbide cmos and method of fabrication
10/23/1997WO1997039476A1 SiC ELEMENT AND PROCESS FOR ITS PRODUCTION
10/23/1997WO1997039320A1 Pressure sensor
10/23/1997WO1997039145A1 Transistor-based molecular detection apparatus and method
10/22/1997EP0802633A1 Binary decision diagram (BDD) logic device
10/22/1997EP0802570A2 Double heterojunction field-effect transistor
10/22/1997EP0802569A1 FLASH-EPROM integrated with EEPROM
10/22/1997EP0802568A1 Semiconductor device
10/22/1997EP0802567A2 Semiconductor device and manufacturing method thereof
10/22/1997EP0802563A2 Method of manufacturing a semi-conductor device having a low resistance metal silicide layer
10/22/1997EP0802417A2 Semiconductor acceleration sensor
10/22/1997EP0802416A2 Manufacturing method of semiconductor acceleration sensor
10/22/1997EP0802394A1 Scanning probe microscope, semiconductor distortion sensor for use therein and manufacturing process for manufacture thereof
10/22/1997EP0801817A1 Insulated gate semiconductor devices with implants for improved ruggedness
10/22/1997EP0801816A1 Semiconductor device having a passivation layer
10/22/1997EP0766909A4 Vertical interconnect process for silicon segments
10/22/1997CN1162867A PIN diode variable attenuator
10/22/1997CN1162844A Semiconductor memory and method of manufacturing the same
10/22/1997CN1036231C 半导体存储器件 A semiconductor memory device
10/21/1997US5680348 Power supply independent current source for FLASH EPROM erasure
10/21/1997US5680346 High-speed, non-volatile electrically programmable and erasable cell and method
10/21/1997US5680190 Liquid crystal display apparatus including the same transparent material in the TFT semiconductor layer and a sub-pixel electrode
10/21/1997US5680149 Driving circuit for driving liquid crystal display device
10/21/1997US5680073 Controlled semiconductor capacitors
10/21/1997US5679980 Conductive exotic-nitride barrier layer for high-dielectric-constant material electrodes
10/21/1997US5679970 Triple gate flash-type EEPROM memory and its production process
10/21/1997US5679969 Ferroelectric based capacitor for use in memory systems and method for fabricating the same
10/21/1997US5679968 Transistor having reduced hot carrier implantation
10/21/1997US5679966 Depleted base transistor with high forward voltage blocking capability
10/21/1997US5679965 Continuously graded layers of aluminum gallium nitride to reduce or eliminate conduction band or valence band offsets
10/21/1997US5679963 Alloy containing gallium, arsenic and antimony as enhancment layer
10/21/1997US5679962 Semiconductor device and a single electron device
10/21/1997US5679961 Correlation tunnel device
10/21/1997US5679902 Surface-micromachined symmetrical differential pressure sensor with electrodes patterned into multiple conducting areas
10/21/1997US5679593 Method of fabricating a high resistance integrated circuit resistor
10/21/1997US5679592 Process for formation of LDD MOSFET wing photoresist
10/21/1997US5679589 FET with gate spacer
10/21/1997US5679587 Method of fabricating an integrated circuit with vertical bipolar power transistors and isolated lateral bipolar control transistors
10/21/1997US5679179 Having gallium arsenide interface layer which is atomically flat over macroscopic area
10/16/1997WO1997038448A1 Semiconductor component with adjustable current amplification based on avalanche breakdown controlled by tunnel current
10/16/1997WO1997038447A2 High-voltage lateral mosfet soi device having a semiconductor linkup region
10/16/1997WO1997038446A1 Semiconductor component with a split floating gate
10/16/1997DE19651108A1 Semiconductor component, e.g. IGBT, for high voltage inverter
10/16/1997DE19648285A1 Flash memory with high programming and erasure efficiency
10/16/1997DE19614011A1 Halbleiterbauelement mit einem geteilten Floating Gate Semiconductor component with a divided floating gate
10/16/1997DE19614010A1 Halbleiterbauelement mit einstellbarer, auf einem tunnelstromgesteuerten Lawinendurchbruch basierender Stromverstärkung A semiconductor device with adjustable, based on a tunneling current controlled avalanche breakdown current gain
10/15/1997EP0801427A2 Field effect transistor, semiconductor storage device, method of manufacturing the same and method of driving semiconductor storage device
10/15/1997EP0801426A2 Improved trench MOS gate device and method of producing the same
10/15/1997EP0801425A1 Insulated gate semiconductor device and method of manufacturing the same
10/15/1997EP0801420A2 Method for production of a SOI substrate by hydrophobic washing and pasting and SOI substrate thereby produced
10/15/1997EP0801418A2 Method for forming a T-shaped gate electrode in a semi-conductor device, and the T-shaped gate electrode
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