| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 02/24/1998 | US5721438 Germanium composition profile in base region improves tolerance of heterojunction bipolar transistor to manufacturing variations and reduces the sensitivity to emitter/base biases |
| 02/24/1998 | US5721437 Heterojunction-type bipolar transistor with ballast resistance layer |
| 02/24/1998 | US5721422 Electronic devices having an array with shared column conductors |
| 02/24/1998 | US5721197 Controllable superconductor component |
| 02/24/1998 | US5721175 Method of manufacturing a semiconductor device |
| 02/24/1998 | US5721170 Method of making a high-voltage MOS transistor with increased breakdown voltage |
| 02/24/1998 | US5721164 Method of manufacturing thin film transistors |
| 02/24/1998 | US5721161 Method of making high-speed, low-noise millimeterwave HEMT and pseudormorphic HEMT |
| 02/24/1998 | US5721159 Method for manufacturing and testing a nonvolatile memory device |
| 02/24/1998 | US5721148 Method for manufacturing MOS type semiconductor device |
| 02/24/1998 | US5721147 Methods of forming bipolar junction transistors |
| 02/19/1998 | WO1998007194A1 Ultra-low power-delay product nnn/ppp logic devices |
| 02/19/1998 | DE19720215A1 Semiconductor component manufacturing method for power IBGT, MOSFET in e.g. motor drive, robotics, lighting control |
| 02/19/1998 | DE19632060A1 Rotation rate sensor manufacturing method |
| 02/18/1998 | EP0824272A2 Semiconductor memory and method of producing the same |
| 02/18/1998 | EP0824268A2 Method of fabricating a gate oxide layer |
| 02/18/1998 | CN1173948A Thin-film semiconductor device, its method for making the same, liquid crystal display equipment and method for making the same |
| 02/18/1998 | CN1173739A Semiconductor device and its manufacturing method |
| 02/17/1998 | US5719888 Memory system |
| 02/17/1998 | US5719808 Flash EEPROM system |
| 02/17/1998 | US5719530 High power bipolar transistor device |
| 02/17/1998 | US5719487 Output controlling apparatus for vehicle generator |
| 02/17/1998 | US5719433 Semiconductor component with integrated heat sink |
| 02/17/1998 | US5719432 Semiconductor device including bipolar transistor with improved current concentration characteristics |
| 02/17/1998 | US5719430 Formed in a semiconductor substrate |
| 02/17/1998 | US5719429 High frequency/high output insulated gate semiconductor device with reduced and balanced gate resistance |
| 02/17/1998 | US5719428 High-frequency semiconductor device with protection device |
| 02/17/1998 | US5719426 Semiconductor device and manufacturing process thereof |
| 02/17/1998 | US5719425 Multiple implant lightly doped drain (MILDD) field effect transistor |
| 02/17/1998 | US5719424 Graded LDD implant process for sub-half-micron MOS devices |
| 02/17/1998 | US5719423 Isolated power transistor |
| 02/17/1998 | US5719422 Low threshold voltage, high performance junction transistor |
| 02/17/1998 | US5719421 DMOS transistor with low on-resistance and method of fabrication |
| 02/17/1998 | US5719420 Insulated gate type semiconductor device having built-in protection circuit |
| 02/17/1998 | US5719415 Hetero-junction bipolar transistor |
| 02/17/1998 | US5719413 Gateless thyristor combining high and low density regions of emitter shorts |
| 02/17/1998 | US5719412 Insulated gate bipolar transistor |
| 02/17/1998 | US5719411 Three-terminal MOS-gate controlled thyristor structures with current saturation characteristics |
| 02/17/1998 | US5719410 Semiconductor device wiring or electrode |
| 02/17/1998 | US5719409 Silicon carbide metal-insulator semiconductor field effect transistor |
| 02/17/1998 | US5719408 Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment |
| 02/17/1998 | US5719407 Collective element of quantum boxes |
| 02/17/1998 | US5719406 Field emission device having a charge bleed-off barrier |
| 02/17/1998 | US5719083 Method of forming a complex film over a substrate having a specifically selected work function |
| 02/17/1998 | US5719082 Angled implant to improve high current operation of bipolar transistors |
| 02/17/1998 | US5719081 Fabrication method for a semiconductor device on a semiconductor on insulator substrate using a two stage threshold adjust implant |
| 02/17/1998 | US5719075 Forming a uniform dielectric on a semiconductive substrate |
| 02/17/1998 | US5719073 Microstructures and single mask, single-crystal process for fabrication thereof |
| 02/17/1998 | US5719071 Method of forming a landing pad sturcture in an integrated circuit |
| 02/17/1998 | US5719070 Used to connect solder contact to a semiconductor substrate |
| 02/17/1998 | US5719069 One-chip integrated sensor process |
| 02/17/1998 | US5719067 Source-drain regions are vertically displaced from each other |
| 02/17/1998 | US5719065 Method for manufacturing semiconductor device with removable spacers |
| 02/12/1998 | WO1998006140A1 Method of operating a storage cell arrangement |
| 02/12/1998 | WO1998006139A1 Non-volatile storage cell |
| 02/12/1998 | WO1998006138A1 Non-volatile storage cell |
| 02/12/1998 | WO1998006137A1 Selectively doped channel region for increased idsat and method for making same |
| 02/12/1998 | WO1998006136A1 Semiconductor device that can be controlled by the field effect |
| 02/12/1998 | WO1998006135A2 Electron devices comprising a thin-film electron emitter |
| 02/12/1998 | WO1998006132A1 Integrated circuit device manufacture |
| 02/12/1998 | WO1998006101A1 Method of operating a storage cell arrangement |
| 02/12/1998 | WO1998005934A1 Electronic sensor component |
| 02/12/1998 | WO1998005807A1 CaTiO3 INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR |
| 02/12/1998 | DE19733891A1 Semiconductor acceleration sensor for measurement in x=y plane |
| 02/12/1998 | DE19705342A1 Silicide process for MOS transistor |
| 02/12/1998 | DE19644821C1 Controllable semiconductor structure for use instead of JFET, MESFET |
| 02/12/1998 | DE19631872A1 Micro electronic vertical semiconductor element for e.g. gallium arsenide substrate |
| 02/12/1998 | DE19631742A1 Elektronisches Sensor-Bauelement Electronic sensor component |
| 02/12/1998 | CA2211678A1 Resonating structure and method for forming the resonating structure |
| 02/11/1998 | EP0823736A2 Vertical bipolar transistor and method of manufacturing the same |
| 02/11/1998 | EP0823735A1 MOS-technology power device |
| 02/11/1998 | EP0823728A2 Method of manufacturing a field effect transistor |
| 02/11/1998 | EP0823727A1 Process for making the extrinsic base of a NPN transistor in a bipolar high frequency technology |
| 02/11/1998 | EP0700580A4 Method for fabricating suspension members for micromachined sensors |
| 02/11/1998 | CN1173241A Method of manufacturing a multilayer solar cell |
| 02/11/1998 | CN1173046A High-power soft recovery tunnel diode SPBD tube core structure |
| 02/11/1998 | CN1173044A Semiconductor elemetn and data processing equipment ted used it |
| 02/11/1998 | CN1173043A Semiconductor memory device |
| 02/11/1998 | CN1173036A Cathode Structure body and method of coating electronics radiative body |
| 02/11/1998 | CN1172962A Transmission type liquid crystal display device and method for fabricating the same |
| 02/10/1998 | US5717635 High density EEPROM for solid state file |
| 02/10/1998 | US5717473 Liquid crystal display having power source lines connected to the wells of the TFTs |
| 02/10/1998 | US5717253 Structure for forming an improved quality silicidation layer |
| 02/10/1998 | US5717244 Semiconductor device having layers with varying lifetime characteristics |
| 02/10/1998 | US5717241 For an integrated circuit |
| 02/10/1998 | US5717239 Semiconductor device |
| 02/10/1998 | US5717233 Semiconductor device having capacitior and manufacturing method thereof |
| 02/10/1998 | US5717232 Semiconductor device sealed with molded resin |
| 02/10/1998 | US5717228 Heterojunction bipolar transistor with crystal orientation |
| 02/10/1998 | US5717227 Bipolar junction transistors having insulated gate electrodes |
| 02/10/1998 | US5717225 Nonlinear optical transistor |
| 02/10/1998 | US5717224 Preventing the light illuminating by an interlayer shield consisting of silicon nitride, aluminum oxide, aluminum nitride |
| 02/10/1998 | US5717223 Array with amorphous silicon TFTs in which channel leads overlap insulating region no more than maximum overlap |
| 02/10/1998 | US5716891 Heating, low pressure vapor depositing a dielectric silica layer |
| 02/10/1998 | US5716886 Method of fabricating a high voltage metal-oxide semiconductor (MOS) device |
| 02/10/1998 | US5716879 Method of making a thin film transistor |
| 02/10/1998 | US5716871 Semiconductor device and method of forming the same |
| 02/10/1998 | US5716867 Solid state image sensor |
| 02/10/1998 | US5716866 Method of forming a semiconductor device |
| 02/10/1998 | US5716865 Method of making split gate flash EEPROM cell by separating the tunneling region from the channel |