Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/1998
03/10/1998US5726485 Capacitor for a semiconductor device
03/10/1998US5726481 Power semiconductor device having a temperature sensor
03/10/1998US5726479 Semiconductor device having polysilicon electrode minimization resulting in a small resistance value
03/10/1998US5726477 Threshold adjustment in field effect semiconductor devices
03/10/1998US5726474 Field effect controlled semiconductor component with integrated resistance therein
03/10/1998US5726473 Semiconductor device minimizing hot carrier generation
03/10/1998US5726472 Semiconductor device
03/10/1998US5726471 Programmable non-volatile memory cell and method of forming a programmable non-volatile memory cell
03/10/1998US5726470 Nonvolatile semiconductor memory device and method of fabrication of the same
03/10/1998US5726469 Surface voltage sustaining structure for semiconductor devices
03/10/1998US5726468 Compound semiconductor bipolar transistor
03/10/1998US5726467 Multiple narrow-line-channel fet having improved noise characteristics
03/10/1998US5726463 Silicon carbide MOSFET having self-aligned gate structure
03/10/1998US5726461 Active matrix substrate and switching element
03/10/1998US5726459 GE-SI SOI MOS transistor and method of fabricating same
03/10/1998US5726095 Method for making MOSFET device having controlled parasitic isolation threshold voltage
03/10/1998US5726088 Method of manufacturing a semiconductor device having a buried insulated gate
03/10/1998US5726087 Method of formation of semiconductor gate dielectric
03/10/1998US5726082 Easy control of threshold voltage
03/10/1998US5726081 Method of fabricating metal contact of ultra-large-scale integration metal-oxide semiconductor field effect transistor with silicon-on-insulator structure
03/10/1998US5726077 Method of producing an electro-optical device
03/10/1998US5726070 Silicon-rich tunnel oxide formed by oxygen implantation for flash EEPROM
03/10/1998US5726069 Use of oblique implantation in forming emitter of bipolar transistor
03/10/1998US5725785 Method for manufacturing accelerometer sensor
03/05/1998WO1998009335A1 Monolithic integrated circuit including bipolar transistors having nonuniformly doped collector base junction
03/05/1998WO1998009334A1 Charge modulation device
03/05/1998WO1998005076A3 Semiconductor component for high voltage
03/05/1998WO1998005075A3 Semiconductor component with linear current-to-voltage characteristics
03/05/1998WO1998002924A3 Sic semiconductor device comprising a pn junction with a voltage absorbing edge
03/05/1998DE19738750A1 Switching component with front and rear side semiconductor substrate
03/05/1998DE19714687A1 Semiconductor component with conductive film on semiconductor substrate
03/05/1998DE19708031A1 RAM with field regions in semiconductor substrate
03/05/1998DE19700672A1 Semiconductor component with substrate with two main surfaces
03/05/1998DE19638769C1 Emittergesteuerter Thyristor Emitter Controlled Thyristor
03/05/1998CA2213840A1 Method of forming power semiconductor devices with controllable integrated buffer
03/04/1998EP0827210A2 Thin-film transistor and fabrication method thereof
03/04/1998EP0827209A1 Gate layout of a transistor with common base region
03/04/1998EP0827208A2 Hydrogen-terminated diamond misfet and its manufacturing method
03/04/1998EP0827204A2 Protected monolithic rectifier bridge
03/04/1998EP0827202A2 Semiconductor device including protection means and method of fabricating the same
03/04/1998EP0827153A2 Method of writing data to a single transistor type ferroelectric memory cell
03/04/1998EP0826801A2 Silicon substrate manufacture
03/04/1998EP0826244A1 Lateral field effect transistor having reduced drain-to-source on-resistance
03/04/1998EP0694086A4 Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits
03/04/1998EP0605679B1 Method and device for stacking substrates which are to be joined by bonding
03/04/1998CN1175321A Novel transistor with ultra shallow tip and method of fabrication
03/04/1998CN1175094A Insulated gate field effect transistor
03/04/1998CN1175093A Semiconductor device and making method
03/04/1998CN1175091A Semiconductor device
03/04/1998CN1175090A 半导体器件 Semiconductor devices
03/04/1998CN1175087A Method for making insulated gate field effect transistor
03/04/1998CN1175086A Method for making field effect transistor
03/03/1998US5723985 Clocked high voltage switch
03/03/1998US5723897 Segmented emitter low noise transistor
03/03/1998US5723895 Field effect transistor formed in semiconductor region surrounded by insulating film
03/03/1998US5723893 Method for fabricating double silicide gate electrode structures on CMOS-field effect transistors
03/03/1998US5723891 Top-drain trench based resurf DMOS transistor structure
03/03/1998US5723890 MOS type semiconductor device
03/03/1998US5723888 Non-volatile semiconductor memory device
03/03/1998US5723886 Field effects transistor
03/03/1998US5723885 Semiconductor device including a ferroelectric film and control method thereof
03/03/1998US5723882 Insulated gate field effect transistor having guard ring regions
03/03/1998US5723879 Thin film transistor with vertical channel adjacent sidewall of gate electrode and method of making
03/03/1998US5723878 Active matrix liquid crystal panel having thin film transistors
03/03/1998US5723877 Photoelectric conversion apparatus
03/03/1998US5723872 Mixed barrier resonant tunneling
03/03/1998US5723381 Formation of self-aligned overlapping bitline contacts with sacrificial polysilicon fill-in stud
03/03/1998US5723379 Method for fabricating polycrystalline silicon having micro roughness on the surface
03/03/1998US5723378 Fabrication method of semiconductor device using epitaxial growth process
03/03/1998US5723377 Process for manufacturing a semiconductor device including a silicidation step
03/03/1998US5723376 Method of manufacturing SiC semiconductor device having double oxide film formation to reduce film defects
03/03/1998US5723371 Method for fabricating a thin film transistor having a taper-etched semiconductor film
03/03/1998US5723370 FET and/or bipolar devices formed in thin vertical silicon on insulator (SOI) structures
03/03/1998US5723355 Method to incorporate non-volatile memory and logic components into a single sub-0.3 micron fabrication process for embedded non-volatile memory
03/03/1998US5723353 Process for manufacturing a sensor
03/03/1998US5723352 Process to optimize performance and reliability of MOSFET devices
03/03/1998US5723350 Process for fabricating a contactless electrical erasable EPROM memory device
03/03/1998US5723349 Process for manufacturing a high conductivity insulated gate bipolar transistor integrater structure
02/1998
02/26/1998WO1998008259A1 A BIPOLAR SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS OF SiC AND A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE OF SiC
02/26/1998WO1998008255A1 Method for manufacturing oxide dielectric device, and memory and semiconductor device usign the device
02/26/1998DE19724469A1 Flash memory with increased writing and erasure efficiency
02/25/1998EP0825657A2 Method of making an organic thin film transistor and article made by the method
02/25/1998EP0825652A2 Ohmic electrode and method of forming the same
02/25/1998EP0825643A2 Simulation method for predicting properties of manufactured semiconductor devices
02/25/1998EP0825641A1 Method of manufacturing a transistor with self aligned contacts
02/25/1998EP0825640A2 FET gate insulation and process for manufacturing
02/25/1998EP0825638A2 Method of manufacturing fine structures
02/25/1998EP0825427A2 Resonating structure and method for forming the resonating structure
02/25/1998CN1174628A Multi-valued read-only storage location with improved signal-to noise ratio
02/25/1998CN1174530A Factener driving tool insert
02/25/1998CN1174414A 半导体器件 Semiconductor devices
02/25/1998CN1174410A 半导体器件 Semiconductor devices
02/25/1998CN1174406A Method for manufacturing semiconductor integrated circuit device
02/24/1998US5721700 Non-volatile semiconductor memory device in which applied voltage to ferroelectric capacitor is adjusted
02/24/1998US5721601 Display units having two insolating films and a planarizing film and process for producing the same
02/24/1998US5721596 Liquid crystal display device
02/24/1998US5721444 Thin-film transistor having a buried impurity region and method of fabricating the same
02/24/1998US5721443 NMOS field effect transistors and methods of forming NMOS field effect transistors
02/24/1998US5721440 Memory with EEPROM cell having capacitive effect and method for the reading of such a cell
02/24/1998US5721439 MOS transistor structure for electro-static discharge protection circuitry
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