| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/10/1998 | US5716863 Method of manufacturing semiconductor device having elements different in gate oxide thickness and resistive elements |
| 02/10/1998 | US5716861 Insulated-gate field-effect transistor structure and method |
| 02/10/1998 | US5716859 Method of fabricating a silicon BJT |
| 02/10/1998 | CA2074848C Method of forming electrodes for trench capacitors |
| 02/05/1998 | WO1998005076A2 Semiconductor component for high voltage |
| 02/05/1998 | WO1998005075A2 Semiconductor component with linear current-to-voltage characteristics |
| 02/05/1998 | WO1998005074A1 Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation |
| 02/05/1998 | WO1998005072A2 Radiation sensors |
| 02/05/1998 | DE19723937A1 Gallium arsenide metal semiconductor FET for HF communications system |
| 02/05/1998 | DE19703971A1 Field effect transistor for high integration circuit |
| 02/05/1998 | DE19703223A1 Electrode manufacturing method for semiconductor device |
| 02/05/1998 | DE19631147A1 Nichtflüchtige Speicherzelle A non-volatile memory cell |
| 02/05/1998 | DE19631146A1 Nichtflüchtige Speicherzelle A non-volatile memory cell |
| 02/05/1998 | DE19630984A1 Double poly metal-oxide-nitride-oxide-semiconductor EEPROM |
| 02/05/1998 | CA2261753A1 Semiconductor component for high voltage |
| 02/05/1998 | CA2261719A1 Semiconductor component with linear current-to-voltage characteristics |
| 02/04/1998 | EP0822601A1 MOS capacitor with wide voltage and frequency operating ranges |
| 02/04/1998 | EP0822600A1 Lateral gate, vertical drift region transistor |
| 02/04/1998 | EP0822598A1 Single-chip contact-less read-only memory (rom) device and the method for fabricating the device |
| 02/04/1998 | EP0822594A2 MOS transistor for DRAM cell |
| 02/04/1998 | EP0822593A2 A method of manufacturing an insulated gate field effect transistor |
| 02/04/1998 | EP0822591A1 Insulated gate field effect transistor |
| 02/04/1998 | EP0822587A2 Method for making integrated capacitive structures |
| 02/04/1998 | EP0822581A2 A method of crystallizing a semiconductor film and of manufacturing a thin film transistor |
| 02/04/1998 | EP0822579A1 Method of fabricating integrated microstructures of semiconductor material |
| 02/04/1998 | EP0822415A1 Semiconductor integrated capacitive acceleration sensor and relative fabrication method |
| 02/04/1998 | EP0822398A1 Integrated piezoresistive pressure sensor and relative fabrication method |
| 02/04/1998 | EP0822274A2 Method for manufacturing epitaxial wafer |
| 02/04/1998 | CN1172551A Method of producing ohmic contact and semiconductor device |
| 02/04/1998 | CN1172547A Capacitive absolute pressure sensor and method for making |
| 02/04/1998 | CN1172351A High-power quick soft-recovery diode SIOD tube core structure |
| 02/04/1998 | CN1172250A Semiconductor acceleration sensor |
| 02/04/1998 | CN1037301C Electrode for semiconductor element |
| 02/03/1998 | US5715196 Method for driving a non-volatile semiconductor memory |
| 02/03/1998 | US5714907 Apparatus for providing digitally-adjustable floating MOS capacitance |
| 02/03/1998 | US5714797 Variable capacitance semiconductor diode |
| 02/03/1998 | US5714790 High image quality liquid crystal displays |
| 02/03/1998 | US5714788 Dual ion implantation process for gate oxide improvement |
| 02/03/1998 | US5714787 Semiconductor device with a reduced element isolation region |
| 02/03/1998 | US5714786 Transistors having controlled conductive spacers, uses of such transistors and methods of making such transistors |
| 02/03/1998 | US5714784 Formed on a substrate |
| 02/03/1998 | US5714783 Field-effect transistor |
| 02/03/1998 | US5714782 Composite integrated circuit device |
| 02/03/1998 | US5714781 Semiconductor device having a gate electrode in a grove and a diffused region under the grove |
| 02/03/1998 | US5714778 Semiconductor device including memory cell having a capacitance element added to a node of the cell |
| 02/03/1998 | US5714777 Si/SiGe vertical junction field effect transistor |
| 02/03/1998 | US5714775 Power semiconductor device |
| 02/03/1998 | US5714774 Two-gate semiconductor power switching device |
| 02/03/1998 | US5714771 Projection type color display device, liquid crystal device, active matrix assembly and electric view finder |
| 02/03/1998 | US5714766 Nano-structure memory device |
| 02/03/1998 | US5714765 Method of fabricating a compositional semiconductor device |
| 02/03/1998 | US5714690 Piezoresistive silicon pressure sensor manufacture implementing long diaphragms with large aspect ratios |
| 02/03/1998 | US5714413 Method of making a transistor having a deposited dual-layer spacer structure |
| 02/03/1998 | US5714412 Using an erasable programmable read only memory with tunnel oxide process |
| 02/03/1998 | US5714402 Method for fabricating a capacitor of a semiconductor device and the structure of the same |
| 02/03/1998 | US5714399 Silicon oxide film containing chlorine |
| 02/03/1998 | US5714398 Using silicon, germenium and boron layer to deposit on polysilicon film, then through high temperature annealing boron diffuses into polysilicon gate to form p-type gate |
| 02/03/1998 | US5714397 Process for producing lateral bipolar transistor |
| 02/03/1998 | US5714396 Method of making a high voltage planar edge termination structure |
| 02/03/1998 | US5714014 Semiconductor heterojunction material |
| 02/03/1998 | US5714010 Process for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the same |
| 02/03/1998 | US5713652 Slide projector mountable light valve display |
| 01/29/1998 | WO1998004004A1 High density trench dmos transistor with trench bottom implant |
| 01/29/1998 | WO1998003977A1 Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
| 01/29/1998 | WO1997038447A3 High-voltage lateral mosfet soi device having a semiconductor linkup region |
| 01/29/1998 | DE19730864A1 Neurone MOS transistor |
| 01/29/1998 | DE19649410A1 Non volatile memory cell for e.g. flash EEPROM or flash memory card |
| 01/28/1998 | EP0821425A2 A semiconductor device having a semiconductor switch structure |
| 01/28/1998 | EP0821415A2 A capacitor and method of manufacture thereof |
| 01/28/1998 | EP0821413A1 Differential poly-edge oxidation for stable SRAM cells |
| 01/28/1998 | EP0821411A1 Monolithic assembly of an IGBT transistor and a fast diode |
| 01/28/1998 | EP0821410A1 Monolithic device associating a high-voltage device and logic devices |
| 01/28/1998 | EP0821405A2 MOSFET gate insulation and process for production thereof |
| 01/28/1998 | EP0820645A1 Bipolar silicon-on-insulator transistor with increased breakdown voltage |
| 01/28/1998 | EP0820644A2 Semiconductor device provided with transparent switching element |
| 01/28/1998 | EP0820642A1 METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC COMPRISING A MASKING STEP |
| 01/28/1998 | EP0820637A1 A METHOD FOR INTRODUCTION OF AN IMPURITY DOPANT IN SiC, A SEMICONDUCTOR DEVICE FORMED BY THE METHOD AND A USE OF A HIGHLY DOPED AMORPHOUS LAYER AS A SOURCE FOR DOPANT DIFFUSION INTO SiC |
| 01/28/1998 | EP0820581A1 Semiconductor chip with a diaphragm resting on vertical supports |
| 01/28/1998 | CN1171631A Semiconductor device with double junction structure |
| 01/28/1998 | CN1171629A Semiconductor device and method for fabricating same |
| 01/28/1998 | CN1171600A Nonvolatile memory cell and method for programming same |
| 01/28/1998 | CN1171599A Semiconductor memory device |
| 01/28/1998 | CN1171554A 半导体加速度传感器 Semiconductor acceleration sensor |
| 01/27/1998 | US5712819 Flash EEPROM system with storage of sector characteristic information within the sector |
| 01/27/1998 | US5712817 Highly integrated cell having a reading transistor and a writing transistor |
| 01/27/1998 | US5712816 Method for evaluating the dielectric layer of nonvolatile EPROM, EEPROM and flash-EEPROM memories |
| 01/27/1998 | US5712814 Nonvolatile memory cell and a method for forming the same |
| 01/27/1998 | US5712778 Voltage multiplying DC-DC converter for a thin film transistor liquid crystal display |
| 01/27/1998 | US5712752 Input/output protecting circuit and a protection element |
| 01/27/1998 | US5712609 Micromechanical memory sensor |
| 01/27/1998 | US5712505 Bipolar transistor having ring shape base and emitter regions |
| 01/27/1998 | US5712503 Metal oxide semiconductor and method of making the same |
| 01/27/1998 | US5712502 Semiconductor component having an edge termination means with high field blocking capability |
| 01/27/1998 | US5712501 Graded-channel semiconductor device |
| 01/27/1998 | US5712498 Charge modulation device |
| 01/27/1998 | US5712496 MOS Poly-Si thin film transistor with a flattened channel interface and method of producing same |
| 01/27/1998 | US5712495 Semiconductor device including active matrix circuit |
| 01/27/1998 | US5712494 For a display device |
| 01/27/1998 | US5712492 Transistor for checking radiation-hardened transistor |
| 01/27/1998 | US5712491 Lateral semiconductor device |