Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/1998
04/07/1998US5736446 Method of fabricating a MOS device having a gate-side air-gap structure
04/07/1998US5736445 Method for producing at least two transsistors in a semiconductor body
04/07/1998US5736443 Flash EEPROM cell and method of manufacturing the same
04/07/1998US5736442 Forming protective insulating film made of same material as isolating film on conductive layer, forming oxide film at electrode facings of gate electrodes, etching,
04/07/1998US5736439 Heating at the second temperature higher than the first temperature
04/07/1998US5736438 Field effect thin-film transistor and method of manufacturing the same as well as semiconductor device provided with the same
04/07/1998US5736437 Method of fabricating a bottom and top gated thin film transistor having an electrical sidewall connection
04/07/1998US5736436 Method of making a thin film transistor panel
04/07/1998US5736435 Process for fabricating a fully self-aligned soi mosfet
04/07/1998US5736434 Forming gate electrode, applying voltage between electrode and cathode, maintaining voltage, forming anodic oxide film, forming channel
04/07/1998US5736430 Transducer having a silicon diaphragm and method for forming same
04/07/1998US5736418 Anisotropic etching the polysilicon and silicon dioxide barrier layer, forming a v-shaped groove
04/07/1998US5736417 Method of fabricating double photoresist layer self-aligned heterojunction bipolar transistor
04/07/1998US5736416 Fabrication process for MOSFET using oblique rotation ion implantation
04/07/1998US5736414 Forming a silicon semiconductor layer on the substrate, a dielctric layer, a gate electrode of aluminum, surface layer of aluminum oxide, doping silcon layer twice by masking first by anodized layer, removing it, doping again
04/07/1998US5736061 Semiconductor element mount and producing method therefor
04/02/1998WO1998013881A1 Semiconductor device and production method thereof
04/02/1998WO1998013880A1 POLY-Si/POLY-SiGe GATE FOR CMOS DEVICES
04/02/1998WO1998013878A1 Self-aligned non-volatile storage cell
04/02/1998WO1998013865A1 Method of producing a mos transistor
04/02/1998WO1998013861A1 Screening oxide for source and drain regions formed from solid dopant source
04/02/1998WO1998013829A1 Two-transistor flash eprom cell
04/02/1998WO1998013811A1 Display device
04/02/1998WO1998013775A1 System and method for predicting the behavior of a component
04/02/1998WO1998013300A1 Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same
04/02/1998DE19742181A1 Semiconductor component manufacturing method for IGBT, DMOSFET
04/02/1998DE19724221A1 Non volatile memory device
04/02/1998DE19705791C1 Power MOSFET device structure
04/02/1998DE19646148A1 Planar semiconductor component for monolithic integrated circuit
04/02/1998DE19640413A1 Verfahren zur Herstellung barrierenfreier Halbleiterspeicheranordnungen A process for preparing barrier-free semiconductor memory devices
04/02/1998DE19640308A1 Leistungs-MOS-Bauelement Power MOS device
04/02/1998DE19640246A1 Halbleiteranordnung mit geschützter Barriere für eine Stapelzelle A semiconductor device with a protected barrier to cell stack
04/02/1998DE19640211A1 Verfahren zur Herstellung barrierenfreier Halbleiterspeicheranordnungen A process for preparing barrier-free semiconductor memory devices
04/02/1998DE19639875C1 Verfahren zur Herstellung eines MOS-Transistors A process for producing a MOS transistor
04/02/1998DE19638969A1 EEPROM cell with poly:silicon-distance-floating gate
04/01/1998EP0833394A1 Bidirectional breakover protection diode
04/01/1998EP0833393A1 Floating gate non-volatile memory cell with low erasing voltage and manufacturing method
04/01/1998EP0833392A2 Field effect controllable vertical semiconductor device
04/01/1998EP0833391A1 Semiconductor device on III-V semiconductor substrate and method for fabricating it
04/01/1998EP0833390A2 Cathode assembly for GTO thyristor
04/01/1998EP0833389A2 GTO thyristor
04/01/1998EP0833388A2 Amplifying gate thyristor with lateral resistance
04/01/1998EP0833387A1 Field effect controllable semiconductor device
04/01/1998EP0833386A1 Vertical semiconductor device controllable by field effect
04/01/1998EP0833380A2 Improvements in or relating to mosfet transistors
04/01/1998EP0833379A2 Semiconductor device and manufacturing method thereof
04/01/1998EP0833377A2 Enhancement of hydrogenation of materials encapsulated by an oxide
04/01/1998EP0833345A2 Non-volatile semiconductor memory device
04/01/1998EP0833163A1 Accelerometer
04/01/1998EP0833137A2 Circuit and method of compensating for membrane stress in a sensor
04/01/1998EP0832498A1 Method of manufacturing a pic (power integrated circuit) device, and a pic device manufactured by such a method
04/01/1998EP0786786A4 Capacitor with a double electrical layer
03/1998
03/31/1998US5734670 Semiconductor device, semiconductor laser, and high electron mobility transistor
03/31/1998US5734612 Semiconductor memory device with a plurality of memory cells connected to bit lines and method of adjusting the same
03/31/1998US5734609 Integrated circuit memory devices having reduced susceptibility to inadvertent programming and erasure and methods of operating same
03/31/1998US5734449 Liquid crystal display apparatus having an opaque conductive capacitor electrode and manufacturing method thereof
03/31/1998US5734440 White clip circuit
03/31/1998US5734195 Semiconductor wafer for epitaxially grown devices having a sub-surface getter region
03/31/1998US5734194 Semiconductor device and method of making
03/31/1998US5734193 Termal shunt stabilization of multiple part heterojunction bipolar transistors
03/31/1998US5734189 Low parasitic source inductance field-effect transistor device having via connections disposed along an outer periphery thereof
03/31/1998US5734187 Memory cell design with vertically stacked crossovers
03/31/1998US5734185 MOS transistor and fabrication process therefor
03/31/1998US5734183 Semiconductor device
03/31/1998US5734181 Semiconductor device and manufacturing method therefor
03/31/1998US5734177 Semiconductor device, active-matrix substrate and method for fabricating the same
03/31/1998US5734175 Insulated-gate semiconductor device having a position recognizing pattern directly on the gate contact area
03/31/1998US5734174 Photo hole burning memory
03/31/1998US5733818 Method for fabricating semiconductor device with planarization step using CMP
03/31/1998US5733812 Semiconductor device with a field-effect transistor having a lower resistance impurity diffusion layer, and method of manufacturing the same
03/31/1998US5733811 Method for fabricating vertical type mosfet
03/31/1998US5733810 Method of manufacturing MOS type semiconductor device of vertical structure
03/31/1998US5733806 Spacer formation
03/31/1998US5733805 Method of fabricating semiconductor device utilizing a GaAs single crystal
03/31/1998US5733804 Fabricating fully self-aligned amorphous silicon device
03/31/1998US5733803 Method for producing a multiplicity of microelectronic circuits on SOI
03/31/1998US5733797 Method of making a semiconductor device with moisture impervious film
03/31/1998US5733794 Breakdown voltage can be optimized
03/31/1998US5733793 Process formation of a thin film transistor
03/31/1998US5733792 MOS field effect transistor with improved pocket regions for suppressing any short channel effects and method for fabricating the same
03/31/1998US5733791 Methods for fabrication of bipolar device having high ratio of emitter to base area
03/31/1998US5733661 Metal oxide containing ions of an organic carboxylic acid salt and/or ions of an inorganic oxoacid salt
03/31/1998US5733641 Buffered substrate for semiconductor devices
03/31/1998US5733369 Method for forming crystal
03/26/1998WO1998012756A1 Semiconductor device and process for manufacturing the same
03/26/1998WO1998012755A1 Semiconductor device
03/26/1998WO1998012754A2 Electronic devices including electrodes comprising chromium nitride and a method of manufacturing such devices
03/26/1998WO1998012753A1 Short channel self aligned vmos field effect transistor
03/26/1998WO1998012749A2 Emitter-switched thyristor
03/26/1998WO1998012741A1 Short channel non-self aligned vmos field effect transistor
03/26/1998DE19709731A1 Electrostatic capacitive acceleration sensor
03/26/1998DE19709007A1 MOS capacitor semiconductor component for A=D or D=A converter
03/25/1998EP0831534A2 Semiconductor device with a passivation layer
03/25/1998EP0831524A1 Process for manufacturing a dual floating gate oxide flash memory cell
03/25/1998EP0831521A2 Method for forming a silicide region
03/25/1998EP0831520A2 Method of manufacturing a MIS structure on silicon carbide (SiC)
03/25/1998EP0831357A2 Liquid crystal display device
03/25/1998EP0830728A2 Monolithic class d amplifier
03/25/1998CN1177213A Solid photoing device
03/25/1998CN1177212A Method of fabricating flash memory device
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