| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 12/24/1997 | WO1997049134A2 Soi-transistor circuitry employing soi-transistors and method of manufacture thereof |
| 12/24/1997 | WO1997049133A2 Integrated circuit device with embedded flash memory and method for manufacturing same |
| 12/24/1997 | WO1997049126A1 Method of reducing transistor channel length with oxidation inhibiting spacers |
| 12/24/1997 | WO1997049125A2 Method of manufacturing an electronic device comprising thin-film transistors |
| 12/24/1997 | WO1997049124A1 A method for producing a channel region layer in a voltage controlled semiconductor device |
| 12/24/1997 | WO1997049121A1 Cmos gate structure and method for making same |
| 12/24/1997 | WO1997049120A1 Dopant profile spreading for arsenic source/drain |
| 12/24/1997 | WO1997041602A3 Semiconductor device provided with a resistance element |
| 12/24/1997 | CN1168740A Process for producing a read-only storage cell arrangement with vertical MOS transistors |
| 12/24/1997 | CN1168738A Micromechanical memory sensor |
| 12/24/1997 | CN1168556A Switching mechanism for gas insulated switch gear |
| 12/24/1997 | CN1168539A Method of programming flash memory cell |
| 12/24/1997 | CN1168538A Semiconductor device and manufacturing methods thereof |
| 12/24/1997 | CN1168472A 半导体加速度传感器 Semiconductor acceleration sensor |
| 12/24/1997 | CN1036816C Double implanted laterally diffused MOS device and method thereof |
| 12/24/1997 | CN1036815C Combined thyratron transistor |
| 12/23/1997 | US5701274 Semiconductor device with selectable device information |
| 12/23/1997 | US5701167 LCD having a peripheral circuit with TFTs having the same structure as TFTs in the display region |
| 12/23/1997 | US5701088 Method of evaluating a MIS-type semiconductor device |
| 12/23/1997 | US5701035 Electrode structure and method for fabricating the same |
| 12/23/1997 | US5701029 Semiconductor having polycrystalline silicon sandwiched by semiconductor substrate and metal silicide |
| 12/23/1997 | US5701027 Programmable interconnect structures and programmable integrated circuits |
| 12/23/1997 | US5701026 Lateral trench MISFET |
| 12/23/1997 | US5701023 Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness |
| 12/23/1997 | US5701020 Pseudomorphic step-doped-channel field-effect transistor |
| 12/23/1997 | US5701019 Semiconductor device having first and second stacked semiconductor layers, with electrical contact to the first semiconductor layer |
| 12/23/1997 | US5701018 Semiconductor device having parallel connection of an insulated gate bipolar transistor and a diode |
| 12/23/1997 | US5701017 Semiconductor device and method for its manufacture |
| 12/23/1997 | US5701016 Semiconductor device and method for its manufacture |
| 12/23/1997 | US5700734 Process of fabricating field effect transistor having reliable polycide gate electrode |
| 12/23/1997 | US5700727 Method of forming a thin film transistor |
| 12/23/1997 | US5700719 Semiconductor device and method for producing the same |
| 12/23/1997 | US5700702 Method for manufacturing an acceleration sensor |
| 12/23/1997 | US5700701 Method for reducing junction capacitance and increasing current gain in collector-up bipolar transistors |
| 12/23/1997 | US5700700 Transistor in a semiconductor device and method of making the same |
| 12/23/1997 | US5700699 Method for fabricating a polycrystal silicon thin film transistor |
| 12/23/1997 | CA2134504C High current high voltage vertical pmos in ultra high voltage cmos |
| 12/18/1997 | WO1997048136A1 Semiconductor device having soi structure and method for manufacturing the device |
| 12/18/1997 | WO1997048135A1 Quantum well mos transistor and methods for making same |
| 12/18/1997 | WO1997048127A1 METHOD FOR ENGRAVING THE GATE IN MOS TECHNOLOGY USING A SiON BASED HARD MASK |
| 12/18/1997 | WO1997048099A1 A device and method for multi-level charge/storage and reading out |
| 12/18/1997 | DE19722441A1 Semiconductor component, e.g. IGBT, for control of motor or switching inverter |
| 12/18/1997 | DE19653213A1 Semiconductor acceleration sensor for motor vehicle airbag inflation |
| 12/18/1997 | DE19651269A1 Single piece semiconductor acceleration sensor for motor vehicle |
| 12/17/1997 | EP0813251A2 Thin-film transistor and display device using the same |
| 12/17/1997 | EP0813250A2 Trench semiconductor device |
| 12/17/1997 | EP0813248A2 Dielectrically isolated IC merged with surge protection circuit and method for manufacturing the same |
| 12/17/1997 | EP0813242A2 DRAM cell with trench transistor |
| 12/17/1997 | EP0813239A1 Improvements in or relating to semiconductor devices |
| 12/17/1997 | EP0813234A2 Method of manufacturing a MOSFET |
| 12/17/1997 | EP0813058A1 MOS transistor for biomedical applications |
| 12/17/1997 | EP0813046A1 A thermometer based on CB tunnelling |
| 12/17/1997 | EP0812475A1 Bicmos semiconductor device comprising a silicon body with locos and oxide filled groove regions for insulation |
| 12/17/1997 | EP0812471A1 Microwave power soi-mosfet with high conductivity metal gate |
| 12/17/1997 | EP0812470A1 A method of manufacturing a self-aligned vertical bipolar transistor on an soi |
| 12/17/1997 | EP0812469A1 Method for manufacturing a microwave vertical bipolar transistor on an soi with buried base metal conductor |
| 12/17/1997 | EP0812468A2 A METHOD OF MANUFACTURING A HIGH VOLTAGE GaN-AlN BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MADE |
| 12/17/1997 | EP0640248B1 Epitaxial ohmic contact for integrated heterostructure of Group II-VI semiconductor materials and method of fabricating same |
| 12/17/1997 | EP0429509B1 Method and apparatus for forming a side wall contact in a nonvolatile electrically alterable memory cell |
| 12/17/1997 | CN1167988A Nonvolatile semiconductor memory |
| 12/17/1997 | CN1036740C Dielectrically isolated semiconductor device and method for its manufacture |
| 12/16/1997 | US5699311 Semiconductor memory device |
| 12/16/1997 | US5699290 Ferroelectric read and write memory and driving method thereof |
| 12/16/1997 | US5699134 Liquid crystal display panel and method for manufacturing the panel |
| 12/16/1997 | US5699008 Thyristor controllable by logic signals |
| 12/16/1997 | US5698902 Semiconductor device having finely configured gate electrodes |
| 12/16/1997 | US5698900 Field effect transistor device with single layer integrated metal and retained semiconductor masking |
| 12/16/1997 | US5698897 Semiconductor device having a plated heat sink |
| 12/16/1997 | US5698895 Silicon segment programming method and apparatus |
| 12/16/1997 | US5698891 Semiconductor device and method for manufacturing the same |
| 12/16/1997 | US5698890 Semiconductor device having bipolar transistor free from leakage current across thin base region |
| 12/16/1997 | US5698888 Compound semiconductor field effect transistor free from piezoelectric effects regardless of orientation of gate electrode |
| 12/16/1997 | US5698885 Semiconductor device and method of manufacturing semiconductor device |
| 12/16/1997 | US5698884 Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same |
| 12/16/1997 | US5698883 MOS field effect transistor and method for manufacturing the same |
| 12/16/1997 | US5698882 LDD Polysilicon thin-film transistor |
| 12/16/1997 | US5698881 MOSFET with solid phase diffusion source |
| 12/16/1997 | US5698879 Nonvolatile semiconductor memory device |
| 12/16/1997 | US5698878 Plate potential applying structure of trench capacitor cell |
| 12/16/1997 | US5698875 Metal-semiconductor field effect transistor having reduced control voltage and well controlled pinch off voltage |
| 12/16/1997 | US5698871 Heterojunction bipolar transistor |
| 12/16/1997 | US5698870 High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal |
| 12/16/1997 | US5698869 Insulated-gate transistor having narrow-bandgap-source |
| 12/16/1997 | US5698868 High-speed heterojunction transistor |
| 12/16/1997 | US5698867 Turn-off, MOS-controlled, power semiconductor component |
| 12/16/1997 | US5698864 Method of manufacturing a liquid crystal device having field effect transistors |
| 12/16/1997 | US5698862 Structure of the heterostructure-emitter and heterostructure-base transistor (HEHBT) |
| 12/16/1997 | US5698464 Method of manufacturing a semiconductor device with oxynitride layer |
| 12/16/1997 | US5698462 Method for fabricating microwave semiconductor integrated circuit |
| 12/16/1997 | US5698461 Method for fabricating lightly doped drain metal oxide semiconductor field effect transistor |
| 12/16/1997 | US5698460 Method of self-aligning an emitter contact in a planar heterojunction bipolar transistor and apparatus thereof |
| 12/16/1997 | US5698459 Fabrication of bipolar transistors using selective doping to improve performance characteristics |
| 12/16/1997 | US5698457 Method for manufacturing high voltage semiconductor device |
| 12/16/1997 | US5698454 Method of making a reverse blocking IGBT |
| 12/16/1997 | US5698375 Process for formation of capacitor electrode for semiconductor device |
| 12/16/1997 | US5698112 Surrounding the aluminum or alloy layer with protective titanium nitride layers, resistance to chemical substances used for etching sacrificial layer |
| 12/16/1997 | CA2046284C P-n-p diamond transistor |
| 12/11/1997 | WO1997047049A1 Series of layers and substrate-buffer system, and process for the production thereof |
| 12/11/1997 | WO1997047046A1 Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method |
| 12/11/1997 | WO1997047045A1 Silicon carbide metal-insulator semiconductor field effect transistor |