H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1997
12/02/1997	US5693964 Electric field relaxation layer comprising indium gallium arsenic on both sides of gate electrode producing a potential difference and current flow
12/02/1997	US5693961 Top-gate type thin film transistor with dangling bonds of silicon partly combined with hydrogen
12/02/1997	US5693959 Thin film transistor and liquid crystal display using the same
12/02/1997	US5693955 Tunnel transistor
12/02/1997	US5693884 Semiconductor acceleration sensor
12/02/1997	US5693578 Method of forming thin silicon oxide film with high dielectric breakdown and hot carrier resistance
12/02/1997	US5693569 Method of forming silicon carbide trench mosfet with a schottky electrode
12/02/1997	US5693560 Comprising a refractory metal compound layer on oxygen absorbing layer; preventing defect drifting, heat resistance
12/02/1997	US5693550 Method of fabricating self-aligned silicide device using CMP
12/02/1997	US5693549 Method of fabricating thin film transistor with supplementary gates
12/02/1997	US5693547 Method of making vertical MOSFET with sub-trench source contact
12/02/1997	US5693546 Doping the amorphous silicon through oxide layer using electrode as mask
12/02/1997	US5693544 N-type higfet and method
12/02/1997	US5693542 Method for forming a transistor with a trench
12/02/1997	US5693541 Method for manufacturing a semiconductor device using a silicon nitride mask
12/02/1997	CA2009067C Trench gate complimentary metal oxide semiconductor transistor
11/1997
11/27/1997	WO1997044830A1 High injection bipolar transistor
11/27/1997	WO1997044829A1 Molecule dispersion type negative resistance element and method for manufacturing the same
11/27/1997	WO1997044828A1 Long channel trench-gated power mosfet having fully depleted body region
11/27/1997	WO1997044827A1 Thyristor with integrated du/dt protection
11/27/1997	WO1997036317A3 A method for producing a semiconductor device having semiconductor layers of sic by the use of an implanting step and a device produced thereby
11/27/1997	WO1997036315A3 A transistor having a vertical channel and a method for production thereof
11/27/1997	DE19720439A1 Bipolar semiconductor device especially IGBT
11/27/1997	DE19709541A1 Resin encapsulated high frequency semiconductor component, e.g. FET, HEMT or MMIC
11/27/1997	DE19642746A1 Semiconductor device especially MOSFET or flash EEPROM
11/27/1997	DE19642540A1 Semiconductor device e.g. MOSFET or diode device
11/26/1997	EP0809302A2 CMOS structure in isolated wells with merged depletion regions and method of making same
11/26/1997	EP0809297A1 High-voltage semiconductor device with control element
11/26/1997	EP0809293A1 Power semiconductor structure with lateral transistor driven by vertical transistor
11/26/1997	EP0809279A2 Process for manufacturing an MOS-Transistor
11/26/1997	EP0808513A1 TRENCH FIELD EFFECT TRANSISTOR WITH REDUCED PUNCH-THROUGH SUSCEPTIBILITY AND LOW R DSon?
11/26/1997	EP0662269A4 Controlled semiconductor capacitors.
11/26/1997	EP0624282B1 Fermi threshold field effect transistor with reduced gate and diffusion capacitance
11/26/1997	CN1166049A Method for production of SOI (silicon on insulator) substrate by pasting and SOI substrate
11/26/1997	CN1166048A Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same
11/26/1997	CN1166047A Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method
11/25/1997	US5691941 Nonvolatile semiconductor memory cell capable of saving overwritten cell and its saving method
11/25/1997	US5691939 Semiconductor memory cell
11/25/1997	US5691937 Structure of split gate transistor for use in a non-volatile semiconductor memory and method of manufacturing such a split gate transistor
11/25/1997	US5691787 Active matrix type LCD having short resistors made of microcrystalline n+Si
11/25/1997	US5691786 Liquid crystal display device having compensating capacitive element for defective pixels
11/25/1997	US5691571 Semiconductor device having fine contact hole with high aspect ratio
11/25/1997	US5691564 Semiconductor device with high speed operation and high integration
11/25/1997	US5691560 Nonvolatile semiconductor memory device and method of manufacturing the same
11/25/1997	US5691558 Drift-free avalanche breakdown diode
11/25/1997	US5691557 Semiconductor circuit having input protective circuit
11/25/1997	US5691555 Integrated structure current sensing resistor for power devices particularly for overload self-protected power MOS devices
11/25/1997	US5691553 Semiconductor device and power converter using same
11/25/1997	US5691552 Nonvolatile semiconductor memory formed with silicon-on-insulator structure
11/25/1997	US5691233 Process of forming channel stopper exactly nested in area assigned to thick field oxide layer
11/25/1997	US5691221 Method for manufacturing semiconductor memory device having a stacked capacitor
11/25/1997	US5691214 Method of manufacturing semiconductor devices
11/25/1997	US5690841 Method of producing cavity structures
11/20/1997	WO1997043823A1 Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp
11/20/1997	WO1997043789A1 Schottky barrier rectifiers and methods of forming same
11/20/1997	WO1997043689A1 Thin film device having coating film, liquid crystal panel, electronic apparatus and method of manufacturing the thin film device
11/20/1997	WO1997043461A1 Method for making a thin film of solid material, and uses thereof
11/20/1997	WO1997036316A3 A field controlled semiconductor device of sic and a method for production thereof
11/20/1997	WO1997036314A3 A field effect transistor of sic and a method for production thereof
11/20/1997	WO1997036313A3 A field controlled semiconductor device of sic and a method for production thereof
11/20/1997	DE19719326A1 Active pixel sensor cell for image sensor
11/20/1997	DE19715684A1 CCD manufacturing method
11/20/1997	DE19644504A1 Semiconductor device, e.g. trench-formed IGBT, for high voltage inverter
11/20/1997	DE19612692C1 Two=stage dry and wet thermal oxidation of silicon carbide surface
11/19/1997	EP0807979A2 Diode
11/19/1997	EP0807978A2 A method of fabricating a layer of high p-type conductivity in a semiconductor component and a semiconductor component having such a layer
11/19/1997	EP0807966A1 Heat treatment method for semiconductor substrate
11/19/1997	EP0807936A2 Nonvolatile semiconductor memory device capable of supplying erasing voltage to a flash memory cell
11/19/1997	EP0807320A1 Power thyristor with mos gated turn-off and turn-on
11/19/1997	CN1165586A Varicap diode and method of manufacturing a varicap diode
11/19/1997	CN1165585A Silicon-on-insulator device with floating collector
11/19/1997	CN1165583A Laminate for forming ohmic electrode and ohmic electrode
11/19/1997	CN1165405A Narrow forbidden band source leckage range metal oxide semiconductor field effect transistor and integrated circuit
11/19/1997	CN1165404A Isolated gate heterojunction double-pole transistor
11/19/1997	CN1165399A Method for removing defects by ion implantation using medium temperature oxide layer
11/18/1997	US5689459 Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase
11/18/1997	US5689212 Large-scale integration monolithic microwave amplifier with tree-like distributed topology
11/18/1997	US5689208 For a gate controlled mos power semiconductor device
11/18/1997	US5689140 Method for forming studs and interconnects in a multi-layered semiconductor device
11/18/1997	US5689132 Protective circuit for semiconductor integrated circuit
11/18/1997	US5689130 Vertical semiconductor device with ground surface providing a reduced ON resistance
11/18/1997	US5689129 High efficiency power MOS switch
11/18/1997	US5689128 High density trenched DMOS transistor
11/18/1997	US5689127 Vertical double-gate field effect transistor
11/18/1997	US5689125 Junction
11/18/1997	US5689124 Semiconductor device
11/18/1997	US5689122 InP/InGaAs monolithic integrated demultiplexer, photodetector, and heterojunction bipolar transistor
11/18/1997	US5689121 Insulated-gate semiconductor device
11/18/1997	US5689120 MOS field effect transistor in a dynamic random access memory device and method for fabricating the same
11/18/1997	US5688725 Method of making a trench mosfet with heavily doped delta layer to provide low on-resistance
11/18/1997	US5688724 Method of providing a dielectric structure for semiconductor devices
11/18/1997	US5688722 CMOS integrated circuit with reduced susceptibility to PMOS punchthrough
11/18/1997	US5688706 Method for fabricating a MOSFET device, with local channel doping, self aligned to a selectively deposited tungsten gate
11/18/1997	US5688704 Integrated circuit fabrication
11/18/1997	US5688703 Method of manufacturing a gate structure for a metal semiconductor field effect transistor
11/18/1997	US5688702 Process of making a semiconductor device using a silicon-on-insulator substrate
11/18/1997	US5688701 Method of making semiconductor device having a plurality of impurity layers
11/18/1997	US5688700 Method of forming a field effect transistor
11/13/1997	WO1997042663A1 Fabrication of high-density trench dmos using sidewall spacers
11/13/1997	WO1997042652A1 Control of junction depth and channel length using generated interstitial gradients to oppose dopant diffusion

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