| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/21/1998 | US5741359 Method and apparatus for zone-melting recrystallization of semiconductor layer |
| 04/16/1998 | WO1998016010A1 Triple well charge pump |
| 04/16/1998 | WO1998015982A1 Normally conducting dual thyristor |
| 04/16/1998 | WO1998015973A1 Thin film transistor and liquid crystal display and electronic equipment made using the same |
| 04/16/1998 | WO1998015676A1 Micromechanical building component and production process |
| 04/16/1998 | DE19744860A1 Complementary bipolar transistor component |
| 04/16/1998 | DE19648733A1 Word line production |
| 04/16/1998 | DE19641531A1 Mikromechanisches Bauelement und ein Verfahren zu dessen Herstellung Micromechanical component and a process for its preparation |
| 04/16/1998 | DE19640241C1 Herstellverfahren für eine hoch-epsilon-dielektrische oder ferroelektrische Schicht und Verwendung des Verfahrens Production method for a high-epsilon dielectric or ferroelectric layer and using the method |
| 04/15/1998 | EP0836232A1 Tunnelling device and method of producing a tunnelling device |
| 04/15/1998 | EP0836230A2 Power transistor |
| 04/15/1998 | EP0836223A2 Method of forming a silicide layer |
| 04/15/1998 | EP0836214A2 Field emission device having a charge bleed-off barrier |
| 04/15/1998 | EP0835526A2 Semiconductor device provided with a resistance element |
| 04/15/1998 | EP0784866B1 Fixed value storage cell arrangement and method of producing the same |
| 04/15/1998 | CN1179232A Integrated circuit having mixed layered superlattice materials and precruser solutions for use in process of making same |
| 04/15/1998 | CN1178998A Method for preparing plane field emission display screen and its plane display screen |
| 04/15/1998 | CN1178900A Compensating circuit of thin film stress in sensor and method |
| 04/15/1998 | CN1038080C EPROM cell with isolation transistor and methods for making and operating same |
| 04/14/1998 | US5740104 Multi-state flash memory cell and method for programming single electron differences |
| 04/14/1998 | US5740103 Electrically programmable memory cell |
| 04/14/1998 | US5739886 Liquid crystal display with reverse staggered thin film transistors and opposite electrode, and fabrication method thereof |
| 04/14/1998 | US5739877 Enhanced throughput and yield |
| 04/14/1998 | US5739589 Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same |
| 04/14/1998 | US5739578 High power transistor with contact plugs extended from collectors through a substrate to have ends connected together in an indent in the substrate |
| 04/14/1998 | US5739576 Integrated chip multilayer decoupling capacitors |
| 04/14/1998 | US5739574 SOI semiconductor device with low concentration of electric field around the mesa type silicon |
| 04/14/1998 | US5739573 Semiconductor device with improved salicide structure and a method of manufacturing the same |
| 04/14/1998 | US5739572 High voltage semiconductor device |
| 04/14/1998 | US5739569 Non-volatile memory cell with oxide and nitride tunneling layers |
| 04/14/1998 | US5739568 Non-volatile memory having a cell applying to multi-bit data by double layered floating gate architecture and programming method for the same |
| 04/14/1998 | US5739567 Highly compact memory device with nonvolatile vertical transistor memory cell |
| 04/14/1998 | US5739566 Non-volatile semiconductor memory cell array |
| 04/14/1998 | US5739559 Compound semiconductor integrated circuit with a particular high resistance layer |
| 04/14/1998 | US5739558 High electron mobility transistor including asymmetrical carrier supply layers sandwiching a channel layer |
| 04/14/1998 | US5739557 Non-gold ohmic contact metallization; include both enhancement mode and depletion mode devices |
| 04/14/1998 | US5739556 Pressure contact housing for semiconductor components |
| 04/14/1998 | US5739555 Amplifying-gate thyristor with an increased hold current |
| 04/14/1998 | US5739549 Thin film transistor having offset region |
| 04/14/1998 | US5739544 Quantization functional device utilizing a resonance tunneling effect and method for producing the same |
| 04/14/1998 | US5739064 Second implanted matrix for agglomeration control and thermal stability |
| 04/14/1998 | US5739062 Method of making bipolar transistor |
| 04/14/1998 | US5739061 Method of manufacturing a semiconductor device using gate side wall as mask for self-alignment |
| 04/14/1998 | US5739057 Method of making self-aligned dual gate MOSFET with an ultranarrow channel |
| 04/14/1998 | US5739056 Oxidation, masking, photolithography, stripping, dopes |
| 04/14/1998 | US5739044 Method of manufacturing semiconductor device |
| 04/14/1998 | US5738722 III-V system compound semiconductor device and method for manufacturing the semiconductor device |
| 04/09/1998 | WO1998015013A1 Semiconductor device with a protected barrier for a stack cell |
| 04/09/1998 | WO1998015012A1 Capacitor with an oxygen barrier layer and a first base metal electrode |
| 04/09/1998 | WO1998015011A1 Power mos component |
| 04/09/1998 | WO1998015010A1 Thyristor with breakdown region |
| 04/09/1998 | WO1998015009A1 Uniform ballast resistance for a thermally balanced radio frequency power transistor |
| 04/09/1998 | WO1998015008A1 Process for producing barrier-free semiconductor storage assemblies |
| 04/09/1998 | WO1998015003A1 Process for producing barrier-free semiconductor storage assemblies |
| 04/09/1998 | WO1998014993A1 PROCESS FOR THE MANUFACTURE OF A HIGHLY ε DIELECTRIC OR FERROELECTRIC COATING |
| 04/09/1998 | WO1998014793A1 Magnetic-field sensitive thin film sensor with a tunnel effect barrier layer |
| 04/09/1998 | WO1998014645A1 A METHOD FOR PRODUCING A REGION DOPED WITH BORON IN A SiC-LAYER |
| 04/09/1998 | WO1998001761A3 Acceleration detection device |
| 04/09/1998 | EP0848823A3 Acceleration detection device |
| 04/09/1998 | DE19640656A1 Rearwards conductive switch-off thyristor |
| 04/09/1998 | DE19640243A1 Kondensator mit einer Sauerstoff-Barriereschicht und einer ersten Elektrode aus einem Nichtedelmetall Capacitor having an oxygen-barrier layer and a first electrode made of a non-noble metal |
| 04/09/1998 | DE19639026C1 Selbstjustierte nichtflüchtige Speicherzelle Self-aligned non-volatile memory cell |
| 04/09/1998 | CA2267298A1 Uniform ballast resistance for a thermally balanced radio frequency power transistor |
| 04/08/1998 | EP0834928A1 Integrated circuit diode with a charge injecting node |
| 04/08/1998 | EP0834927A2 Semiconductor IC device |
| 04/08/1998 | EP0834926A2 Semiconductor device controllable by field effect |
| 04/08/1998 | EP0834924A2 SRAM memory structure and manufacturing method thereof |
| 04/08/1998 | EP0834912A2 Dry-etching-free process for high dielectric and ferroelectric memory cell capacitor |
| 04/08/1998 | EP0834910A2 Method and apparatus for wet treating semiconductor wafers |
| 04/08/1998 | EP0834909A2 Method of enhancing the withstanding voltage of a multilayered semiconductor device |
| 04/08/1998 | EP0834897A1 Method of fabricating flat field emission display screens and flat screen obtained thereby |
| 04/08/1998 | EP0834212A1 Converter circuit, circuitry having at least one switching device and circuit module |
| 04/08/1998 | EP0834194A1 Semiconductor device fabrication |
| 04/08/1998 | EP0834192A1 Method for forming salicides |
| 04/08/1998 | EP0834190A2 Method for shallow junction formation |
| 04/08/1998 | EP0834189A1 Manufacture of a semiconductor device with an epitaxial semiconductor zone |
| 04/08/1998 | CN1178378A Nonvolatile memory device |
| 04/07/1998 | US5737281 Data writing method and device of semiconductor device |
| 04/07/1998 | US5737264 Non-volatile semiconductor memory cell |
| 04/07/1998 | US5737261 Non-volatile ferroelectric memory utilizing residual polarization of a ferroelectric film |
| 04/07/1998 | US5737041 TFT, method of making and matrix displays incorporating the TFT |
| 04/07/1998 | US5736890 Method and apparatus for controlling transistors as rectifiers |
| 04/07/1998 | US5736779 Semiconductor device with Zener diode for gate protection, and method for fabricating the same |
| 04/07/1998 | US5736776 Semiconductor device and method of manufacturing the same |
| 04/07/1998 | US5736774 High voltage integrated circuit, and high voltage level shift unit used for the same |
| 04/07/1998 | US5736772 Integrated circuit field effect transistor |
| 04/07/1998 | US5736770 Semiconductor device with conductive connecting layer and abutting insulator section made of oxide of same material |
| 04/07/1998 | US5736769 Semiconductor apparatus |
| 04/07/1998 | US5736768 Semiconductor device on a substrate or a matrix display panel |
| 04/07/1998 | US5736767 Semiconductor device including a CMOSFET of a single-gate |
| 04/07/1998 | US5736766 Medium voltage LDMOS device and method of fabrication |
| 04/07/1998 | US5736765 EEPROM cell having improved topology and reduced leakage current |
| 04/07/1998 | US5736764 PMOS flash EEPROM cell with single poly |
| 04/07/1998 | US5736755 Vertical PNP power device with different ballastic resistant vertical PNP transistors |
| 04/07/1998 | US5736753 Semiconductor device for improved power conversion having a hexagonal-system single-crystal silicon carbide |
| 04/07/1998 | US5736752 Active matrix electroluminescent display pixel element having a field shield means between the pixel and the switch |
| 04/07/1998 | US5736751 Field effect transistor having thick source and drain regions |
| 04/07/1998 | US5736750 MIS semiconductor device and method of fabricating the same |
| 04/07/1998 | US5736461 Preventing oxidation by overcoating titanium nitride layer, heating to react with silicon substrate |
| 04/07/1998 | US5736447 Conductive layers are formed insitu polysilicon doping, patterning to form an emitter |