| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/07/1998 | EP0817276A1 Semiconductor device and production method therefor |
| 01/07/1998 | EP0817275A2 High-frequency FET |
| 01/07/1998 | EP0817274A1 Asymmetric MOS technology power device |
| 01/07/1998 | EP0817271A1 Semiconductor memory device with erasable sectors |
| 01/07/1998 | EP0817264A2 Semiconductor device |
| 01/07/1998 | EP0817254A2 Semiconductor device and methods for producing and mounting the semiconductor device |
| 01/07/1998 | EP0817252A2 Method for manufacturing surface channel type P-channel MOS transistor while supressing P-type impurity penetration |
| 01/07/1998 | EP0817249A2 Capacitor designing method of MOS transistor |
| 01/07/1998 | EP0816903A1 Liquid crystal display |
| 01/07/1998 | EP0816856A1 Electrosatatic capacitive sensor and method for manufacturing the same |
| 01/07/1998 | EP0815596A1 Improved non-destructively read ferroelectric memory cell |
| 01/07/1998 | EP0815595A1 UNCOOLED YBaCuO THIN FILM INFRARED DETECTOR |
| 01/07/1998 | EP0815589A2 Process for fabricating layered superlattice materials and making electronic devices including same |
| 01/07/1998 | EP0815586A1 Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same |
| 01/07/1998 | CN1169595A Sram cell and method of manufacturing the same |
| 01/07/1998 | CN1169589A Semiconductor device and mfg. method thereof |
| 01/06/1998 | US5706403 Semiconductor neural circuit device |
| 01/06/1998 | US5706227 Semiconductor memory cell |
| 01/06/1998 | US5706176 Butted chip array with beveled chips |
| 01/06/1998 | US5706163 ESD-protected thin film capacitor structures |
| 01/06/1998 | US5705941 Output driver for use in semiconductor integrated circuit |
| 01/06/1998 | US5705847 Semiconductor device |
| 01/06/1998 | US5705842 Horizontal MOSFET |
| 01/06/1998 | US5705840 Field effect transistor with recessed buried source and drain regions |
| 01/06/1998 | US5705839 Gate spacer to control the base width of a lateral bipolar junction transistor using SOI technology |
| 01/06/1998 | US5705835 Semiconductor device and method of manufacturing the same |
| 01/06/1998 | US5705830 Static induction transistors |
| 01/06/1998 | US5705829 Semiconductor device formed using a catalyst element capable of promoting crystallization |
| 01/06/1998 | US5705827 Tunnel transistor and method of manufacturing same |
| 01/06/1998 | US5705826 Liquid crystal display switch, a polythiophene or a polyselenophene, or a polytellurophene layer |
| 01/06/1998 | US5705825 Resonant tunneling bipolar transistor |
| 01/06/1998 | US5705824 Field controlled current modulators based on tunable barrier strengths |
| 01/06/1998 | US5705440 Methods of fabricating integrated circuit field effect transistors having reduced-area device isolation regions |
| 01/06/1998 | US5705439 Method to make an asymmetrical LDD structure for deep sub-micron MOSFETS |
| 01/06/1998 | US5705426 Method of forming semiconductor device having planarized wiring with good thermal resistance |
| 01/06/1998 | US5705424 Process of fabricating active matrix pixel electrodes |
| 01/06/1998 | US5705416 Method of manufacturing a flash EEPROM cell |
| 01/06/1998 | US5705414 Method for producing a gate electrode for an MOS structure |
| 01/06/1998 | US5705413 Method of manufacturing an electronic device using thermally stable mask |
| 01/06/1998 | US5705412 Method of making buried gate insulator field effect transistor |
| 01/06/1998 | US5705411 Reactive ion etching to physically etch thin film semiconductor |
| 01/06/1998 | US5705410 Method of producing a semi-conductor with a highly doped zone situated between lightly doped zones, for the manufacture of transistors |
| 01/06/1998 | US5705409 Method for forming trench transistor structure |
| 01/06/1998 | US5705408 Method for forming semiconductor integrated circuit using monolayer epitaxial growth |
| 01/06/1998 | US5705407 Method of forming high performance bipolar devices with improved wiring options |
| 01/06/1998 | US5705406 Method for producing a semiconductor device having semiconductor layers of SiC by the use of an ion-implantation technique |
| 01/06/1998 | US5705405 Method of making the film transistor with all-around gate electrode |
| 01/06/1998 | CA2019026C Electrode structure for iii-v compound semiconductor element and method of manufacturing the same |
| 01/06/1998 | CA2014901C Protection device against the breakdown of bipolar transistors in an integrated driving circuit for power device with resonant load on the collector |
| 01/02/1998 | DE19727491A1 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation |
| 01/02/1998 | DE19727396A1 Polysilizium-Dünnschichttransistor mit Silizid und Herstellungsverfahren dafür Polysilicon thin film transistor with silicide and production method thereof |
| 01/02/1998 | DE19704326A1 HF IC substrate structure |
| 01/02/1998 | DE19626086A1 Auf der Bestückungsoberfläche einer Leiterplatte montierbares Drucksensor-Bauelement Mountable on the mounting surface of a printed circuit board Pressure sensor component |
| 01/02/1998 | DE19626084A1 Drucksensorvorrichtung für eine Montage auf der Bestückungsoberfläche einer Leiterplatte Pressure sensor device for mounting on the mounting surface of a printed circuit board |
| 12/31/1997 | WO1997050176A1 Multiple logic family compatible output driver |
| 12/31/1997 | WO1997050133A1 Radiation-emitting semiconductor diode, and method of manufacturing such a diode |
| 12/31/1997 | WO1997050122A1 Mos transistor and lateral insulating method of a mos transistor active region |
| 12/31/1997 | WO1997050120A1 Self-aligned isolation and planarization process for memory array |
| 12/31/1997 | WO1997050119A1 Self-aligned trench isolation for memory array using sidewall spacers |
| 12/31/1997 | WO1997050118A1 Method for producing a transistor with self-aligned contacts and field insulation |
| 12/31/1997 | WO1997050115A1 Method for manufacturing semiconductor device |
| 12/31/1997 | WO1997050113A1 Heterojunction bipolar transistor with buried selective sub-collector layer, and methods of manufacture |
| 12/31/1997 | WO1997050112A1 Method of selectively exposing a material using a photosensitive layer and multiple image patterns |
| 12/31/1997 | CN1169029A Semiconductor memory and mfg. method therefor |
| 12/31/1997 | CN1169026A Semiconductor thin film, Semiconductor device and mfg. method thereof |
| 12/30/1997 | US5703808 Non-volatile memory cell and method of programming |
| 12/30/1997 | US5703744 Circuit substrate including anodization control means |
| 12/30/1997 | US5703403 Electrode for semiconductor device and method for producing the same |
| 12/30/1997 | US5703393 Semiconductor pressure detecting device and manufacturing method of the device |
| 12/30/1997 | US5703391 Semiconductor device having element isolating insulating film in contact hole |
| 12/30/1997 | US5703390 Semiconductor device having four power MOSFETs constituting H bridge circuit |
| 12/30/1997 | US5703389 Vertical IGFET configuration having low on-resistance and method |
| 12/30/1997 | US5703388 Double-poly monos flash EEPROM cell |
| 12/30/1997 | US5703386 Solid-state image sensing device and its driving method |
| 12/30/1997 | US5703385 Power integrated circuit ("PIC") structure with a vertical IGBT |
| 12/30/1997 | US5703384 MOS semiconductor component having improved transmission properties |
| 12/30/1997 | US5703383 Power semiconductor device |
| 12/30/1997 | US5703382 Array having multiple channel structures with continuously doped interchannel regions |
| 12/30/1997 | US5702975 Method for isolating semiconductor device |
| 12/30/1997 | US5702972 Method of fabricating MOSFET devices |
| 12/30/1997 | US5702967 Method of fabricating a deep submicron MOSFET device using a recessed, narrow polysilicon gate structure |
| 12/30/1997 | US5702966 Method of manufacturing a semiconductor memory device |
| 12/30/1997 | US5702965 Flash memory cell and method of making the same |
| 12/30/1997 | US5702963 Using circuit tiles of silicon thin-films which are transferred, interconnected and packaged |
| 12/30/1997 | US5702962 Fabrication process for a static induction transistor |
| 12/30/1997 | US5702961 Methods of forming insulated gate bipolar transistors having built-in freewheeling diodes and transistors formed thereby |
| 12/30/1997 | US5702960 Method for manufacturing polysilicon thin film transistor |
| 12/30/1997 | US5702959 Method for making an isolated vertical transistor |
| 12/30/1997 | US5702958 Method for the fabrication of bipolar transistors |
| 12/29/1997 | EP0814516A1 Semiconductor logic element and device using it |
| 12/29/1997 | EP0814514A2 A semiconductor memory device including a capacitor |
| 12/29/1997 | EP0814512A2 High-frequency semiconductor device |
| 12/29/1997 | EP0814508A1 Semiconductor device having element with high breakdown voltage |
| 12/29/1997 | EP0814502A1 Complementary semiconductor device and method for producing the same |
| 12/29/1997 | EP0814497A2 Device structure with layer for facilitating passivation of surface states |
| 12/29/1997 | EP0813752A1 Capacitor structure for an integrated circuit and method of fabrication thereof |
| 12/29/1997 | EP0783767A4 Bipolar transistor for use in linear amplifiers |
| 12/29/1997 | EP0776527A4 Electrostatic discharge protection circuit |
| 12/29/1997 | EP0531550B1 Field effect transistor |
| 12/29/1997 | EP0516847B1 Semiconductor device |