H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1997
12/11/1997	WO1997047044A1 Insulated gate bipolar transistor with reduced losses
12/11/1997	WO1997047043A1 Reduced capacitance bipolar junction transistor
12/11/1997	DE19705004A1 Semiconductor on insulator device e.g. transistor, for ASIC
12/11/1997	DE19702346A1 MOSFET for ULSI
12/11/1997	DE19701935C1 Silicon capacitor production in silicon substrate
12/11/1997	DE19638617A1 Vertical type bipolar semiconductor component, e.g. transistor
12/10/1997	EP0812023A1 Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates
12/10/1997	EP0812021A2 Dielectric thin film capacitor element and manufacturing method of the same
12/10/1997	EP0812020A2 Field effect transisor with reduced delay variation
12/10/1997	EP0812019A1 Single gate nonvolatile memory cell and method for accessing the same
12/10/1997	EP0812014A2 Power rectifier assembly
12/10/1997	EP0812012A1 Method for etching to produce metal film structures having tapered sidewalls
12/10/1997	EP0812010A1 Semiconductor structure for MOS transisitor and method of manufacturing said structure
12/10/1997	EP0812009A2 Improvements in or relating to semiconductor processing
12/10/1997	EP0811982A2 Non-volatile ferroelectric memory device for storing data bits restored upon power-on and intermittently refreshed
12/10/1997	EP0811981A2 Method of controlling non-volatile ferroelectric memory cell for inducing a large amount of electric charge representative of data bit
12/10/1997	EP0811869A1 Liquid crystal display device and process for production thereof
12/10/1997	EP0811868A1 Liquid crystal display apparatus and fabrication process thereof
12/10/1997	EP0811831A1 Single-sided differential pressure sensor
12/10/1997	EP0811250A1 Semiconductor device with a roughened semiconductive surface
12/10/1997	EP0811249A1 Emitter ballast bypass for radio frequency power transistors
12/10/1997	EP0811242A1 Method of manufacturing a resurf semiconductor device, and a semiconductor device manufactured by such a method
12/10/1997	EP0811241A1 Method of manufacturing a semiconductor device with a pn junction provided through epitaxy
12/10/1997	EP0641485A4 Membrane dielectric isolation ic fabrication.
12/10/1997	CN1167342A Silicon semiconductor diode chip of all tangent plane junction glass passivation and making method
12/10/1997	CN1167341A Delay change reduced field effect transistor
12/10/1997	CN1167336A Method for making multi-layer amorphous silicon
12/09/1997	US5696718 Device having an electrically erasable non-volatile memory and process for producing such a device
12/09/1997	US5696566 Liquid crystal display and a manufacturing method thereof
12/09/1997	US5696402 Integrated circuit device
12/09/1997	US5696401 Semiconductor device and method of fabricating the same
12/09/1997	US5696400 MOS-type semiconductor integrated circuit device
12/09/1997	US5696398 For protecting an internal circuit from electrostatic breakdown
12/09/1997	US5696397 Input protection circuit and method of fabricating semiconductor integrated circuit
12/09/1997	US5696396 Semiconductor device including vertical MOSFET structure with suppressed parasitic diode operation
12/09/1997	US5696394 Capacitor having a metal-oxide dielectric
12/09/1997	US5696393 Method and apparatus for reducing blooming in output of a CCD image sensor
12/09/1997	US5696391 Overload protection circuit
12/09/1997	US5696390 Current limiter component
12/09/1997	US5696388 Thin film transistors for the peripheral circuit portion and the pixel portion
12/09/1997	US5696387 Thin film transistor in a liquid crystal display having a microcrystalline and amorphous active layers with an intrinsic semiconductor layer attached to same
12/09/1997	US5696386 Aluminum nitride film on substrate, silicon oxide layer, silicon layer, wiring material of a metal or semiconductor with insulator between wiring layer and third layer
12/09/1997	US5696035 Etchant, etching method, and method of fabricating semiconductor device
12/09/1997	US5696034 Method for producing semiconductor substrate
12/09/1997	US5696019 Self-aligned trench isolation for memory array using sidewall spacers
12/09/1997	US5696018 Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
12/09/1997	US5696012 Fabrication method of semiconductor memory device containing CMOS transistors
12/09/1997	US5696011 Method for forming an insulated gate field effect transistor
12/09/1997	US5696010 Method of forming a semiconductor device including a trench
12/09/1997	US5696009 Filling the trenches with electroconductive material, forming source/drain regions and increasing current flow, preventing current leakage
12/09/1997	US5696007 Method for manufacturing a super self-aligned bipolar transistor
12/09/1997	US5696006 Method of manufacturing Bi-MOS device
12/04/1997	WO1997045877A1 Semiconductor device and its manufacture
12/04/1997	WO1997045873A1 Conductors for integrated circuits
12/04/1997	WO1997045865A2 A thin-film electronic device and a method of manufacturing such a device
12/04/1997	WO1997045827A1 Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
12/04/1997	DE19720300A1 Chip-on-chip hybrid electronic component
12/04/1997	DE19700109A1 On silicon-on-insulator (SOI) substrate formed semiconductor component
12/04/1997	DE19653177A1 Detecting faults in gate insulated semiconductor component
12/04/1997	DE19638407A1 Semiconductor sensor with adjustable output signal
12/04/1997	DE19621858A1 Schichtenfolge sowie Substrat-Puffer-System und Verfahren zur Herstellung derselben Layer sequence substrate and buffer system and process for producing same
12/04/1997	CA2256763A1 Conductors for integrated circuits
12/03/1997	EP0810673A1 Semiconductor device with compensation implantation and method of manufacture
12/03/1997	EP0810672A2 High voltage MIS field effect transistor
12/03/1997	EP0810671A2 Insulated gate bipolar transistor type semiconductor device
12/03/1997	EP0810670A1 Vertical bipolar power transistor with an integrated sensing resistor
12/03/1997	EP0810669A1 Thin film transistor element array
12/03/1997	EP0810667A2 Triple well flash memory cell and fabrication process
12/03/1997	EP0810666A1 Non-volatile semiconductor memory cell and method for production thereof
12/03/1997	EP0810660A1 Surface mount semiconductor diode device
12/03/1997	EP0810658A2 Semiconductor device comprising a via-hole
12/03/1997	EP0810652A2 Semiconductor device and manufacture method of same
12/03/1997	EP0810647A2 Process for forming a self-aligned raised source/drain MOS device and device therefrom
12/03/1997	EP0810646A2 Method of fabricating very high gain heterojunction bipolar transistors
12/03/1997	EP0810645A2 Method of fabricating double photoresist layer self-aligned heterojunction bipolar transistor
12/03/1997	EP0810644A2 Method of febricating high-frequency GaAs substrate-based Schottky barrier diodes
12/03/1997	EP0810640A1 Thin film semiconductor device, method for manufacturing thin film semiconductor device, liquid crystal display, method for manufacturing liquid crystal display, electronic apparatus, method for manufacturing electronic apparatus, and method for depositing thin film
12/03/1997	EP0810639A2 Laser crystallisation of an amorphous silicon film for a TFT
12/03/1997	EP0810638A2 Buffered substrate for semiconductor devices
12/03/1997	EP0810637A2 Method of producing a conductive pattern on a substrate using planarization and etching steps
12/03/1997	EP0810503A1 An integrated circuit with a device having a predetermined reverse conduction threshold and a thermal compensation device with Vbe multipliers
12/03/1997	EP0810432A1 Method for manufacturing a combined pressure and electrochemical sensor
12/03/1997	EP0809865A1 SEMICONDUCTOR FIELD EFFECT DEVICE COMPRISING A SiGe LAYER
12/03/1997	EP0809864A1 Lateral thin-film soi devices with linearly-grated field oxide and linear doping profile
12/03/1997	EP0809863A1 Hot carrier transistors and their manufacture
12/03/1997	EP0809861A1 Method of manufacturing a semiconductor device for surface mounting suitable for comparatively high voltages, and such a semiconductor device
12/03/1997	EP0809860A1 Layered structure with a silicide layer, and process for producing such a layered structure
12/03/1997	EP0809847A2 Multi-valued read-only storage location with improved signal-to-noise ratio
12/03/1997	CN1166694A Solid-state antenna switch and field-effect transistor
12/02/1997	US5694412 Semiconductor substrate, output mirror comprising adjacent semiconductor layers having different refractive indices and bandgaps, active region comprising active layer where active region and output mirror are lattice matched to substrate
12/02/1997	US5694357 Nonvolatile semiconductor memory device for storing multi-value data
12/02/1997	US5694343 System for simulating properties of a material having periodically repeated structure
12/02/1997	US5694185 Matrix array of active matrix LCD and manufacturing method thereof
12/02/1997	US5694184 Liquid crystal display device
12/02/1997	US5693983 Thin-film structure with conductive molybdenum-chromium line
12/02/1997	US5693979 Semiconductor device
12/02/1997	US5693977 N-channel field effect transistor including a thin-film fullerene
12/02/1997	US5693972 Method and system for protecting a stacked gate edge in a semiconductor device from self-aligned source (sas) etch in a semiconductor device
12/02/1997	US5693969 MESFET having a termination layer in the channel layer
12/02/1997	US5693966 Power MOS transistor

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