| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/27/1998 | US5712208 Methods of formation of semiconductor composite gate dielectric having multiple incorporated atomic dopants |
| 01/27/1998 | US5712204 Method of making a semiconductor device having reduced junction capacitance between the source and drain regions and the substrate |
| 01/27/1998 | US5712191 Method for producing semiconductor device |
| 01/27/1998 | US5712189 Gallium arsenide |
| 01/27/1998 | US5712181 Method for the formation of polycide gate in semiconductor device |
| 01/27/1998 | US5712180 EEPROM with split gate source side injection |
| 01/27/1998 | US5712178 Non-volatile semiconductor memory device and method for manufacturing the same |
| 01/27/1998 | US5712177 Method for forming a reverse dielectric stack |
| 01/27/1998 | US5712175 Method of making semiconductor device having a schottky gate electrode |
| 01/27/1998 | US5711693 Process for formation of large area flat panel display using side junction |
| 01/22/1998 | WO1998002925A1 Semiconductor component with a control electrode for modulating the conductivity of a channel area by means of a magnetoresistor structure |
| 01/22/1998 | WO1998002924A2 SiC SEMICONDUCTOR DEVICE COMPRISING A pn JUNCTION WITH A VOLTAGE ABSORBING EDGE |
| 01/22/1998 | WO1998002923A2 DEPLETION REGION STOPPER FOR pn JUNCTION IN SILICON CARBIDE |
| 01/22/1998 | WO1998002919A1 Method and mold for manufacturing semiconductor device, semiconductor device, and method for mounting the device |
| 01/22/1998 | WO1998002918A1 Method for fabrication of a non-symmetrical transistor |
| 01/22/1998 | WO1998002917A1 Method for fabrication of a non-symmetrical transistor |
| 01/22/1998 | WO1998002916A1 A METHOD FOR PRODUCING A CHANNEL REGION LAYER IN A SiC-LAYER FOR A VOLTAGE CONTROLLED SEMICONDUCTOR DEVICE |
| 01/22/1998 | WO1997045865A3 A thin-film electronic device and a method of manufacturing such a device |
| 01/22/1998 | DE19729176A1 Herstellungsverfahren für eine Flüssigkristallanzeige mit aktiver Matrix und Struktur der mit diesem Herstellungsverfahren hergestellten Flüssigkristallanzeige Manufacturing method of a liquid crystal active matrix display and structure of the liquid crystal display produced by this production method |
| 01/22/1998 | DE19704999A1 Programming method for non volatile memory, e.g. EEPROM |
| 01/21/1998 | EP0820103A1 Single polysilicon level flash EEPROM cell and manufacturing process therefor |
| 01/21/1998 | EP0820102A2 Read-only semiconductor memory device |
| 01/21/1998 | EP0820096A2 Semiconductor device and method for fabricating the same |
| 01/21/1998 | EP0820094A2 Passivated P-N junction in mesa semiconductor structure |
| 01/21/1998 | EP0819998A2 Power control device |
| 01/21/1998 | EP0819263A1 Method for making a tft active matrix for a projection system screen |
| 01/21/1998 | CN1171168A Ballast monitoring for radio frequency power transistors |
| 01/21/1998 | CN1170959A Method of forming floating gate in flash memory device |
| 01/21/1998 | CN1170934A Method of programming nonvolatile memory |
| 01/20/1998 | US5710735 EEPROM and method for fabricating the same |
| 01/20/1998 | US5710606 LCD TFT having two layer region adjacent base region in which the layers have opposite conductivities and have two density gradients |
| 01/20/1998 | US5710463 High-voltage breakover diode |
| 01/20/1998 | US5710455 Lateral MOSFET with modified field plates and damage areas |
| 01/20/1998 | US5710454 Tungsten silicide polycide gate electrode formed through stacked amorphous silicon (SAS) multi-layer structure. |
| 01/20/1998 | US5710453 Transistor structure and method for making same |
| 01/20/1998 | US5710452 Semiconductor device having electrostatic breakdown protection circuit |
| 01/20/1998 | US5710451 High-voltage lateral MOSFET SOI device having a semiconductor linkup region |
| 01/20/1998 | US5710450 Method of forming a transistor |
| 01/20/1998 | US5710449 Integrated circuit structure |
| 01/20/1998 | US5710446 Active pixel sensor cell that utilizes a parasitic transistor to reset the photodiode of the cell |
| 01/20/1998 | US5710445 Gate turn-off thyristor for high blocking voltage and small component thickness |
| 01/20/1998 | US5710444 Field-effect-controlled semiconductor component |
| 01/20/1998 | US5710443 Merged device with aligned trench fet and buried emitter patterns |
| 01/20/1998 | US5710442 Semiconductor device and method of manufacturing same |
| 01/20/1998 | US5710439 Optoelectronic integrated device having optical elements and electronic elements grown in a monolithic form on a GaAs ssubstrate |
| 01/20/1998 | US5710438 Semiconductor device with a silicide layer |
| 01/20/1998 | US5710436 Quantum effect device |
| 01/20/1998 | US5710068 Low thermal impedance integrated circuit |
| 01/20/1998 | US5710058 Method of making multi-terminal resonant tunneling transistor |
| 01/20/1998 | US5710055 Method of making PMOSFETs having indium or gallium doped buried channels and n+ polysilicon gates and CMOS devices fabricated therefrom |
| 01/20/1998 | US5710054 Method of forming a shallow junction by diffusion from a silicon-based spacer |
| 01/20/1998 | US5710053 Method for manufacturing thin film transistor for a liquid crystal display |
| 01/20/1998 | US5710051 Method for manufacturing a single electron transistor by using a scanning tunneling microscopy |
| 01/20/1998 | US5710050 Method for fabricating a semiconductor device |
| 01/15/1998 | WO1998001908A1 Semiconductor device with special emitter connection |
| 01/15/1998 | WO1998001761A2 Acceleration detection device |
| 01/14/1998 | EP0818829A1 Bipolar transistor and method of fabricating it |
| 01/14/1998 | EP0818828A1 Power field effect transistor |
| 01/14/1998 | EP0818826A1 Semiconductor device |
| 01/14/1998 | EP0818825A1 Monolithic assembly of thyristors with common cathode |
| 01/14/1998 | EP0818824A2 High-frequency semiconductor device |
| 01/14/1998 | EP0818819A1 Improvements in or relating to semiconductor devices |
| 01/14/1998 | EP0818810A2 Method of fabricating high beta HBT devices |
| 01/14/1998 | EP0818056A2 Integrated heterostructures of group iii-v nitride semiconductor materials and methods for fabricating the same |
| 01/14/1998 | EP0818046A1 Capacitive absolute pressure sensor and method |
| 01/14/1998 | EP0754349A4 Semiconductor devices and methods |
| 01/14/1998 | CN1170238A Bipolar transistor and method of fabrication |
| 01/14/1998 | CN1170237A Integrated power supply circuit apparatus and manufacture method |
| 01/14/1998 | CN1037044C Power intergrated circuits |
| 01/13/1998 | US5708588 Flash EEPROM memory with improved discharged speed using substrate bias and method therefor |
| 01/13/1998 | US5708485 Active matrix display device |
| 01/13/1998 | US5708484 TFT active matrix liquid crystal display devices with two layer gate lines, the first being the same level and material as gate electrodes |
| 01/13/1998 | US5708352 A.C. Generator for vehicles |
| 01/13/1998 | US5708299 Multichip press-contact type semiconductor device |
| 01/13/1998 | US5708292 Power amplification circuit |
| 01/13/1998 | US5708289 Pad protection diode structure |
| 01/13/1998 | US5708286 Insulated gate semiconductor device and fabrication method therefor |
| 01/13/1998 | US5708285 Non-volatile semiconductor information storage device |
| 01/13/1998 | US5708284 Non-volatile random access memory |
| 01/13/1998 | US5708282 CCD charge splitter |
| 01/13/1998 | US5708281 Semiconductor device and photoelectric conversion apparatus using the same |
| 01/13/1998 | US5708130 Films, coatings |
| 01/13/1998 | US5707898 Method of forming a programmable non-volatile memory cell by providing a shielding layer over the gate sidewalls |
| 01/13/1998 | US5707897 Non-volatile-memory cell for electrically programmable read only memory having a trench-like coupling capacitors |
| 01/13/1998 | US5707895 Semiconductors |
| 01/13/1998 | US5707890 Method of shifting a wavelength in a semiconductor structure having quantum wells |
| 01/13/1998 | US5707885 Method for manufacturing a vertical transistor having a storage node vertical transistor |
| 01/13/1998 | US5707884 Process for fabricating a contactless electrical erasable EPROM memory device |
| 01/13/1998 | US5707882 Semiconductor device for display device using thin film transistors and process of manufacturing the same |
| 01/13/1998 | US5707746 Semiconductors with insulating substrates, thin film transistors, silicon nitride layers on silicon and passivation with hydrogen |
| 01/13/1998 | US5707721 Methods of forming field effect transistors having oxidation-controlled gate lengths |
| 01/08/1998 | WO1998000872A1 Integrated circuit device and method of making the same |
| 01/08/1998 | WO1998000870A1 Thin film transistor, method of its manufacture and circuit and liquid crystal display using the thin film transistor |
| 01/08/1998 | WO1998000866A1 Reduced parasitic capacitance semiconductor devices |
| 01/08/1998 | WO1998000692A1 Pressure sensor for mounting on the components side of a printed circuit board |
| 01/08/1998 | WO1998000690A1 Pressure sensor component mounted on the insertion surface of a circuit board |
| 01/08/1998 | DE19627122A1 Power MOS semiconductor device switchable via gate |
| 01/08/1998 | CA2209620A1 Fet input/output pad layout |
| 01/07/1998 | EP0817278A2 Memory cell |
| 01/07/1998 | EP0817277A1 TRIAC array with gate reference potential being applied to common backside electrode |