Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/1998
03/25/1998CN1177211A Triple well flash memory fabrication process
03/24/1998US5731856 Methods for forming liquid crystal displays including thin film transistors and gate pads having a particular structure
03/24/1998US5731803 Array with light active units sized to eliminate artifact from size difference
03/24/1998US5731732 Gate drive technique for a bidirectional blocking lateral MOSFET
03/24/1998US5731717 Logic or memory element based on n-stable phase-locking of single-electron tunneling oscillation, and computer using the same
03/24/1998US5731690 Electric power supply system for vehicle
03/24/1998US5731637 Semiconductor device
03/24/1998US5731635 Semiconductor device having a carrier and a multilayer metallization
03/24/1998US5731628 Semiconductor device having element with high breakdown voltage
03/24/1998US5731627 Power semiconductor devices having overlapping floating field plates for improving breakdown voltage capability
03/24/1998US5731626 Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby
03/24/1998US5731623 Semiconductor device
03/24/1998US5731620 Semiconductor device with reduced parasitic substrate capacitance
03/24/1998US5731619 CMOS structure with FETS having isolated wells with merged depletions and methods of making same
03/24/1998US5731617 Semiconductor device having bipolar transistor and field effect transistor
03/24/1998US5731613 Semiconductor device having a monocrystalline layer composed of carbon, oxygen, hydrogen and nitrogen atoms
03/24/1998US5731612 Insulated gate field effect transistor structure having a unilateral source extension
03/24/1998US5731611 MOSFET transistor cell manufactured with selectively implanted punch through prevent and threshold reductoin zones
03/24/1998US5731609 MOS random access memory having array of trench type one-capacitor/one-transistor memory cells
03/24/1998US5731608 One transistor ferroelectric memory cell and method of making the same
03/24/1998US5731605 Turn-off power semiconductor component with a particular ballast resistor structure
03/24/1998US5731604 Semiconductor device MOS gated
03/24/1998US5731603 Lateral IGBT
03/24/1998US5731601 Four-phase driving CCD solid-state imaging device with a two-layer transfer gate electrode
03/24/1998US5731598 Single electron tunnel device and method for fabricating the same
03/24/1998US5731242 Self-aligned contact process in semiconductor fabrication
03/24/1998US5731240 Manufacturing method for semiconductor depositing device
03/24/1998US5731238 Integrated circuit having a jet vapor deposition silicon nitride film and method of making the same
03/24/1998US5731233 Semiconductor device having MOS transistor and method of manufacturing the same
03/24/1998US5731224 Method for manufacturing ohmic contacts for compound semiconductors
03/24/1998US5731216 Method of making an active matrix display incorporating an improved TFT
03/19/1998WO1998011610A1 Ultra short trench transistors and process for making same
03/19/1998WO1998011609A1 Lateral dmos transistor for rf/mircrowave applications
03/19/1998WO1998011608A1 Charge coupled device, and method of manufacturing such a device
03/19/1998WO1998011602A1 Method for producing integrated cmos circuits or transducers containing cmos circuits
03/19/1998WO1998010925A1 Memory device using movement of protons
03/19/1998WO1998006135A3 Electron devices comprising a thin-film electron emitter
03/18/1998EP0829908A2 Field-effect transistor and method of producing the same
03/18/1998EP0829906A2 Junction high electron mobility transistor-heterojunction bipolar transistor (jhemt-hbt) monolithic microwave integrated circuit (mmic) and single growth method of fabrication
03/18/1998EP0829905A2 A large area active matrix array
03/18/1998EP0829099A1 Bidirectional blocking accumulation-mode trench power mosfet
03/18/1998EP0829012A1 Single crystal silicon sensor with high aspect ratio and curvilinear structures and associated method
03/18/1998EP0646289B1 Semiconductor devices with a double gate
03/18/1998CN1176494A Semiconductor device and method for fabricating the same
03/18/1998CN1176493A Semiconductor integrated-circuit apparatus and its producing method
03/17/1998US5729308 Active matrix display device
03/17/1998US5729054 Conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
03/17/1998US5729052 Integrated ULSI heatsink
03/17/1998US5729045 In an integrated circuit
03/17/1998US5729044 Protection diode for a vertical semiconductor component
03/17/1998US5729040 Semiconductor device having groups of element regions in the semiconductor substrate
03/17/1998US5729039 SOI transistor having a self-aligned body contact
03/17/1998US5729037 MOSFET structure and fabrication process for decreasing threshold voltage
03/17/1998US5729036 Integrated circuit transistor having drain junction offset
03/17/1998US5729035 Non-volatile semiconductor device with multi-layered capacitor insulating film
03/17/1998US5729033 Fully self-aligned submicron heterojunction bipolar transistor
03/17/1998US5729032 Field effect type semiconductor device and manufacturing method thereof
03/17/1998US5729031 High breakdown voltage semiconductor device
03/17/1998US5729030 Semiconductor device
03/17/1998US5728626 Spin-on conductor process for integrated circuits
03/17/1998US5728625 Process for device fabrication in which a thin layer of cobalt silicide is formed
03/17/1998US5728616 Method of making a semiconductor memory device with improved capacitor
03/17/1998US5728613 Method of using an insulator spacer to form a narrow base width lateral bipolar junction transistor
03/17/1998US5728611 Method of fabricating semiconductor device
03/17/1998US5728610 Method for producing a thin film transistor having improved carrier mobility characteristics and leakage current characteristics
03/17/1998US5728609 Method for producing contact holes
03/17/1998US5728608 Sulfur hexafluoride and chlorine
03/17/1998US5728607 Method of making a P-channel bipolar transistor
03/17/1998US5728604 Method for making thin film transistors
03/17/1998US5728594 Method of making a multiple transistor integrated circuit with thick copper interconnect
03/17/1998US5728593 Power insulated-gate transistor having three terminals and a manufacturing method thereof
03/17/1998US5728591 Process for manufacturing light valve device using semiconductive composite substrate
03/17/1998US5728453 Method of fabricating topside structure of a semiconductor device
03/17/1998US5728421 Forming a template layer by vapor deposition on substrate, depositing ferrite on annealed template
03/17/1998US5728259 Process for fabricating thin-film semiconductor device without plasma induced damage
03/12/1998WO1998010470A1 Asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region
03/12/1998WO1998010469A1 Transistor and method of manufacturing the same
03/12/1998WO1998010468A1 Static induction transistors
03/12/1998WO1998010464A1 A novel process for reliable ultra-thin oxynitride formation
03/12/1998WO1998002923A3 Depletion region stopper for pn junction in silicon carbide
03/12/1998WO1997049134A3 Soi-transistor circuitry employing soi-transistors and method of manufacture thereof
03/12/1998DE19739673A1 Non-volatile memory especially MFMIS-FET device
03/12/1998DE19710233A1 Semiconductor device, e.g. MOS transistor with CMOS structure
03/11/1998EP0828296A2 High temperature superconductivity in strained Si/SiGe
03/11/1998EP0828294A1 Semiconductor integrated circuit device and method for manufacturing the same
03/11/1998EP0828290A2 Method of forming power semiconductor devices with controllable integrated buffer
03/11/1998EP0828256A2 Nonvolatile semiconductor memory device
03/11/1998EP0828160A1 Acceleration sensor and a method for its manufacture
03/11/1998EP0827635A1 Electronic devices based on discotic liquid crystals
03/11/1998EP0827634A1 Floating gate non-volatile memory device, and a method of manufacturing the device
03/11/1998EP0827604A1 Constant current source with an eeprom cell
03/11/1998EP0617839B1 Method of making semiconductor components, in particular on GaAs or InP, with recovery of the substrate by chemical means
03/11/1998EP0570595B1 Vertical insulated gate semiconductor device and method for its manufacture
03/11/1998CN1175791A Nonvolatile semiconductor memory and fabricating method
03/11/1998CN1037722C Nonvolatile semiconductor memories with memory cell structure
03/10/1998US5726710 Low noise high performance charge detection system
03/10/1998US5726494 Semiconductor device having a plated heat sink
03/10/1998US5726488 Semiconductor device having semiconductor elements formed in a retrograde well structure
03/10/1998US5726487 Semiconductor device having an improved thin film transistor
03/10/1998US5726486 Semiconductor device having a bipolar transistor
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