Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2001
06/07/2001US20010002704 Semiconductor device with high gettering capability to impurity present in semiconductor layer of soi substrate
06/07/2001US20010002650 Apparatus comprising sputter epitaxy, real-time pattern generation, and flash diffusion, for fabricating monocrystalline three-dimensional integrated circuits, with means for full automation
06/07/2001DE19957533A1 Halbleiterschaltungsanordnung und Verfahren zur Herstellung A semiconductor circuit arrangement and methods for making
06/07/2001DE19957532A1 Halbleiterschaltungsanordnung und Verfahren zur Herstellung A semiconductor circuit arrangement and methods for making
06/07/2001DE19957303A1 MOS-Transistor und Verfahren zu dessen Herstellung MOS transistor and method of producing the
06/07/2001DE19957113A1 Verfahren zur Herstellung eines aktiven Transistorgebietes Process for the preparation of an active transistor region
06/06/2001EP1104938A1 Low power integrated circuit with decoupling capacitances
06/06/2001EP1104494A1 Control of crystal anisotropy for perovskite oxides on semiconductor-based substrates
06/06/2001EP0616726B1 Layered superlattice material applications
06/06/2001CN1298168A Electroluminescent display device and electronic apparatus
06/05/2001US6243298 Non-volatile memory cell capable of being programmed and erased through substantially separate areas of one of its drain-side and source-side regions
06/05/2001US6243295 Nonvolatile semiconductor memory
06/05/2001US6243292 Nonvolatile semiconductor memory device capable of reducing memory array area
06/05/2001US6243289 Dual floating gate programmable read only memory cell structure and method for its fabrication and operation
06/05/2001US6243155 Electronic display device having an active matrix display panel
06/05/2001US6243153 Method of manufacturing pixel electrode for reflection type display device
06/05/2001US6243146 Liquid crystal displays using organic insulating material and manufacturing methods thereof
06/05/2001US6243135 Solid state imaging device having overflow drain region
06/05/2001US6242794 Self-aligned symmetric intrinsic device
06/05/2001US6242793 Method and a circuit for improving the effectiveness of ESD protection in circuit structures formed in a semiconductor
06/05/2001US6242787 Semiconductor device and manufacturing method thereof
06/05/2001US6242784 Edge termination for silicon power devices
06/05/2001US6242783 Semiconductor device with insulated gate transistor
06/05/2001US6242779 Selective silicide thin-film transistor having polysilicon active layers with crystallizing metal agent introduced only in the source/drain regions
06/05/2001US6242777 Field effect transistor and liquid crystal devices including the same
06/05/2001US6242775 Circuits and methods using vertical complementary transistors
06/05/2001US6242774 Poly spacer split gate cell with extremely small cell size
06/05/2001US6242773 Self-aligning poly 1 ono dielectric for non-volatile memory
06/05/2001US6242771 Chemical vapor deposition of PB5GE3O11 thin film for ferroelectric applications
06/05/2001US6242769 Thin film transistor type photo sensor
06/05/2001US6242768 Charge coupled device and a driving method thereof
06/05/2001US6242766 High electron mobility transistor
06/05/2001US6242765 Field effect transistor and its manufacturing method
06/05/2001US6242763 Low triggering voltage SOI silicon-control-rectifier (SCR) structure
06/05/2001US6242762 Semiconductor device with a tunnel diode and method of manufacturing same
06/05/2001US6242759 Semiconductor device and method for forming the same
06/05/2001US6242758 Semiconductor device employing resinous material, method of fabricating the same and electrooptical device
06/05/2001US6242343 Process for fabricating semiconductor device and apparatus for fabricating semiconductor device
06/05/2001US6242334 Multi-step spacer formation of semiconductor devices
06/05/2001US6242329 Method for manufacturing asymmetric channel transistor
06/05/2001US6242326 Method for fabricating compound semiconductor substrate having quantum dot array structure
06/05/2001US6242313 Use of polysilicon field plates to improve high voltage bipolar device breakdown voltage
06/05/2001US6242304 Method and structure for textured surfaces in floating gate tunneling oxide devices
06/05/2001US6242292 Method of producing a semiconductor device with overlapped scanned linear lasers
06/05/2001US6242290 Method of forming a TFT by adding a metal to a silicon film promoting crystallization, forming a mask, forming another silicon layer with group XV elements, and gettering the metal through opening in the mask
06/05/2001US6242276 Method for fabricating micro inertia sensor
06/05/2001US6242275 Method for manufacturing quantum wires
06/05/2001US6242272 Reverse profiling method for profiling modulated impurity density distribution of semiconductor device
06/05/2001US6241859 Method of forming a self-aligned refractory metal silicide layer
06/05/2001US6240782 Semiconductor physical quantity sensor and production method thereof
06/05/2001US6240777 Sensor having a membrane
05/2001
05/31/2001WO2001039275A1 Mos transistor and method for producing the same
05/31/2001WO2001039274A1 Retrograde doped buried layer transistor and method for producing the same
05/31/2001WO2001039273A1 Method of manufacturing a semiconductor device using a halo implantation
05/31/2001WO2001039265A1 Top gate thin-film transistor and method of producing the same
05/31/2001WO2001039264A1 Method in the fabrication of a silicon bipolar transistor
05/31/2001WO2001039259A1 Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon
05/31/2001WO2001039258A1 Functional device and method of manufacturing the same
05/31/2001WO2001039257A2 Silicon layer highly sensitive to oxygen and method for obtaining same
05/31/2001WO2001038222A1 Silicon nanoparticle and method for producing the same
05/31/2001WO2000055105A3 Explosive shear wave energy source
05/31/2001WO2000051165A3 Misfet with narrow bandgap source
05/31/2001WO2000048252A3 Electrostatic discharge protection of integrated circuits
05/31/2001WO2000033354A3 High-efficiency heterostructure thermionic coolers
05/31/2001WO2000004598A3 Semi-conductor element with an emitter area and a stop zone in a pre-mounted position thereto
05/31/2001US20010002327 Power MOS device with increased channel width and process for forming same
05/31/2001US20010002325 Thin film transistor and manufacturing method of thin film transistor
05/31/2001US20010002324 Thin film transistor in metal-induced crystallized region formed around a transition metal nucleus site
05/31/2001US20010002173 Semiconductor storage device and production method thereof
05/31/2001US20010002100 Battery polarity insensitive integrated circuit amplifier
05/31/2001US20010002071 Boron incorporated diffusion barrier material
05/31/2001US20010002063 Lateral Bipolar Transistor
05/31/2001US20010002061 Self-aligned in situ doped plug emitter
05/31/2001US20010002058 Semiconductor apparatus and method of manufacture
05/31/2001US20010002054 Semiconductor memory device and manufacturing method thereof
05/31/2001US20010002052 Floating gate memory with substrate band-to-band tunneling induced hot electron injection
05/31/2001US20010002050 Thin-film transistor array and method of fabricating the same
05/31/2001US20010002047 Thin film transistor and method of manufacturing the same
05/31/2001DE19955602A1 Nichtflüchtige Halbleiter- Speicherzelle sowie Verfahren zu deren Herstellung A non-volatile semiconductor memory cell as well as processes for their preparation
05/31/2001DE19954866A1 Verfahren zur Behandlung einer durch Epitaxie hergestellten Oberfläche eines SiC-Halbleiterkörpers und danach hergestellten Schottkykontakt A method for treating a surface produced by epitaxy of a SiC Schottky semiconductor body and then produced
05/31/2001DE10019705A1 Halbleitervorrichtung und Verfahren zum Herstellen desselben Of the same semiconductor device and method of manufacturing
05/31/2001CA2392307A1 Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon
05/30/2001EP1104035A2 Thin film transistors
05/30/2001EP1104028A2 SiC Nmosfet for use as a power switch and a method of manufacturing the same
05/30/2001EP1104027A2 Power semiconductor device having a ballast resistor region
05/30/2001EP1104014A1 Low-noise-low-frequency vertical transistor with high current gain and corresponding method
05/30/2001EP1104011A1 Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based theron
05/30/2001EP1103980A2 2-bit/cell type nonvolatile semiconductor memory
05/30/2001EP1103947A2 EL display device and electronic apparatus
05/30/2001EP1103606A2 Methods for generating polynucleotides having desired characteristics by iterative selection and recombination
05/30/2001EP1103076A1 Zinc oxide films containing p-type dopant and process for preparing same
05/30/2001EP1103075A1 A thin-film opto-electronic device and a method of making it
05/30/2001EP1103074A2 Mosfet having self-aligned gate and buried shield and method of making same
05/30/2001EP1103068A1 Improved gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
05/30/2001EP1103031A1 Semiconductor component having a passivation
05/30/2001EP0793860B1 Lateral bipolar transistor
05/30/2001CN2432684Y Mini flattened Haiou diode
05/30/2001CN1297258A Silicon carbide N-Channel field effect transistor using as power switch and its mfg. method
05/30/2001CN1297256A Semiconductor device and its mfg. method
05/30/2001CN1297220A Active array type LCD